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BFP640H6327XTSA1
Bipolar - RF Transistor, NPN, 4.5 V, 40 GHz, 200 mW, 50 mA, SOT-343
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- Manufacturer: INFINEON
- Product type: Bipolar RF Transistors
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.5V; Transition Frequency ft:40GHz; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:110hFE; RF Transistor Case:S
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 40GHz
- Transistor Case Style: SOT-343
- DC Current Gain hFE Min: 110hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 50mA
- Collector Emitter Voltage Max: 4.5V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.213 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **BFP640** ## **Surface mount high linearity silicon NPN RF bipolar transistor** Order now © ree ><) Simulation et) Support ## **Product description** The BFP640 is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. Its transition frequency _f_ T of 42 GHz and high linearity characteristics at low currents make this device particularly suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use. ## **Feature list** - Minimum noise figure _NF_ min = 0.65 dB at 1.9 GHz, 3 V, 6 mA - High gain _G_ ma = 24 dB at 1.9 GHz, 3 V, 25 mA - _OIP_ 3 = 26.5 dBm at 1.9 GHz, 3 V, 25 mA ## **Product validation** Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. ## **Potential applications** - Low noise amplifiers (LNAs) in GNSS receivers - LNAs in satellite radio (SDARs, DAB) receivers - LNAs in multimedia applications such as CATV and FM radio ## **Device information** |**Product name / Ordering code**|**Package**|**Pin configuration**|**Pin configuration**|**Pin configuration**|**Pin configuration**|**Marking**|**Pieces / Reel**| |---|---|---|---|---|---|---|---| |BFP640 / BFP640H6327XTSA1|SOT343|1 = B|2 = E|3 = C|4 = E|R4s|3000| _**Attention** :_ _**ESD (Electrostatic discharge) sensitive device, observe handling precautions**_ Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** Revision 3.0 2019-01-25 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Product description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Feature list**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Device information**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Absolute maximum ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**2**|**Thermal characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4| |**3**|**Electrical characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |3.1|DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |3.2|General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |3.3|Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6| |3.4|Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9| |3.5|Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |**4**|**Package information SOT343**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21| Datasheet Revision 3.0 2019-01-25 2 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Absolute maximum ratings** ## **1 Absolute maximum ratings** |**Table 2**<br>**Absolute maximum ratings at****_T_A**|**Table 2**<br>**Absolute maximum ratings at****_T_A**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Max.**||| |Collector emitter voltage|_V_CEO|–|4.1|V|Open base| ||||3.6||_T_A= -55 °C, open base| |Collector emitter voltage|_V_CES||13||E-B short circuited| |Collector base voltage|_V_CBO||13||Open emitter| |Emitter base voltage|_V_EBO||1.2||Open collector| |Base current|_I_B||3|mA|–| |Collector current|_I_C||50||| |Total power dissipation**_1)_**|_P_tot||200|mW|_T_S≤ 90 °C| |Junction temperature|_T_J||150|°C|–| |Storage temperature|_T_Stg|-55|||| _**Attention** :_ _**Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit.**_ > 1 _T_ S is the soldering point temperature. _T_ S is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 3.0 Revision 3.0 2019-01-25 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Thermal characteristics** ## **2 Thermal characteristics** **==> picture [512 x 398] intentionally omitted <==** **----- Start of picture text -----**<br> Table 3 Thermal resistance<br>Parameter Symbol Values Unit Note or test condition<br>Min. Typ. Max.<br>Junction - soldering point R thJS – 300 – K/W –<br>240<br>200<br>160<br>120<br>80<br>40<br>0<br>0 25 50 75 100 125 150<br>T [°C]<br>S<br> [mW]<br>tot<br>P<br>**----- End of picture text -----**<br> **Figure 1 Total power dissipation** _**P**_ **tot = f(** _**T**_ **S)** Datasheet Revision 3.0 2019-01-25 4 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3 Electrical characteristics** ## **3.1 DC characteristics** |**Table 4**<br>**DC characteristics at****_T_A = 25 °C**|**Table 4**<br>**DC characteristics at****_T_A = 25 °C**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Collector emitter breakdown voltage|_V_(BR)CEO|4.1|4.7|–|V|_I_C= 1 mA,_I_B= 0,<br>open base| |Collector emitter leakage current|_I_CES|–|1|400**_2)_**|nA|_V_CE= 13 V,_V_BE= 0,<br>E-B short circuited| ||||1|40**_2)_**||_V_CE= 5 V,_V_BE= 0,<br>E-B short circuited| |Collector base leakage current|_I_CBO||1|40**_2)_**||_V_CB= 5 V,_I_E= 0,<br>open emitter| |Emitter base leakage current|_I_EBO||1|40**_2)_**||_V_EB= 0.5 V,_I_C= 0,<br>open collector| |DC current gain|_h_FE|110|180|270||_V_CE= 3 V,_I_C= 30 mA,<br>pulse measured| ## **3.2 General AC characteristics** **Table 5 General AC characteristics at** _**T**_ **A = 25 °C** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note or test condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Transition frequency|_f_T|–|42|–|GHz|_V_CE= 3 V,_I_C= 30 mA,<br>_f_= 2 GHz| |Collector base capacitance|_C_CB||0.08||pF|_V_CB= 3 V,_V_BE= 0,<br>_f_= 1 MHz,<br>emitter grounded| |Collector emitter capacitance|_C_CE||0.24|||_V_CE= 3 V,_V_BE= 0,<br>_f_= 1 MHz,<br>base grounded| |Emitter base capacitance|_C_EB||0.51|||_V_EB= 0.5 V,_V_CB= 0,<br>_f_= 1 MHz,<br>collector grounded| > 2 Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 Revision 3.0 2019-01-25 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3.3 Frequency dependent AC characteristics** Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, _T_ A = 25 °C. **==> picture [328 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> VC<br>Top View<br>Bias-T<br>OUT<br>E C<br>VB<br>B E<br>Bias-T (Pin 1)<br>IN<br>**----- End of picture text -----**<br> ## **Figure 2 Testing circuit** **Table 6 AC characteristics,** _**V**_ **CE = 3 V,** _**f**_ **= 450 MHz** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note or test condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|_G_ms<br>|_S_21|2|–|33<br>31.5|–|dB|_I_C= 25 mA| |Noise figure<br>•<br>Minimum noise figure<br>•<br>Associated gain|_NF_min<br>_G_ass||0.55<br>26|||_I_C= 6 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|_OIP_3<br>_OP_1dB||23.5<br>10.5||dBm|_I_C= 25 mA,_Z_S_= Z_L= 50 Ω| |**Table 7**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 900 MHz**|**Table 7**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 900 MHz**|**Table 7**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 900 MHz**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|_G_ms<br>|_S_21|2|–|29<br>27.5|–|dB|_I_C= 25 mA| |Noise figure<br>•<br>Minimum noise figure<br>•<br>Associated gain|_NF_min<br>_G_ass||0.6<br>24|||_I_C= 6 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|_OIP_3<br>_OP_1dB||25.5<br>12||dBm|_I_C= 25 mA,_Z_S_= Z_L= 50 Ω| Datasheet Revision 3.0 2019-01-25 6 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** |**Table 8**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 1.5 GHz**|**Table 8**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 1.5 GHz**|**Table 8**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 1.5 GHz**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|_G_ms<br>|_S_21|2|–|25.5<br>23.5|–|dB|_I_C= 25 mA| |Noise figure<br>•<br>Minimum noise figure<br>•<br>Associated gain|_NF_min<br>_G_ass||0.6<br>21|||_I_C= 6 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|_OIP_3<br>_OP_1dB||25.5<br>11.5||dBm|_I_C= 25 mA,_Z_S_= Z_L= 50 Ω| |**Table 9**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 1.9 GHz**|**Table 9**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 1.9 GHz**|**Table 9**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 1.9 GHz**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|_G_ms<br>|_S_21|2|–|24<br>21.5|–|dB|_I_C= 25 mA| |Noise figure<br>•<br>Minimum noise figure<br>•<br>Associated gain|_NF_min<br>_G_ass||0.65<br>19.5|||_I_C= 6 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|_OIP_3<br>_OP_1dB||26.5<br>12.5||dBm|_I_C= 25 mA,_Z_S_= Z_L= 50 Ω| ## **AC characteristics,** _**V**_ **CE = 3 V,** _**f**_ **= 2.4 GHz** |||||||| |---|---|---|---|---|---|---| |**Table 10**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 2.4 GHz**||||||| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|_G_ms<br>|_S_21|2|–|22<br>19.5|–|dB|_I_C= 25 mA| |Noise figure<br>•<br>Minimum noise figure<br>•<br>Associated gain|_NF_min<br>_G_ass||0.7<br>18|||_I_C= 6 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|_OIP_3<br>_OP_1dB||27.5<br>12||dBm|_I_C= 25 mA,_Z_S_= Z_L= 50 Ω| Datasheet Revision 3.0 2019-01-25 7 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** |**Table 11**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 3.5 GHz**|**Table 11**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 3.5 GHz**|**Table 11**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 3.5 GHz**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|_G_ma<br>|_S_21|2|–|18<br>16.5|–|dB|_I_C= 25 mA| |Noise figure<br>•<br>Minimum noise figure<br>•<br>Associated gain|_NF_min<br>_G_ass||0.85<br>15|||_I_C= 6 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|_OIP_3<br>_OP_1dB||27.5<br>12||dBm|_I_C= 25 mA,_Z_S_= Z_L= 50 Ω| |**Table 12**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 5.5 GHz**|**Table 12**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 5.5 GHz**|**Table 12**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 5.5 GHz**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|_G_ma<br>|_S_21|2|–|14<br>12.5|–|dB|_I_C= 25 mA| |Noise figure<br>•<br>Minimum noise figure<br>•<br>Associated gain|_NF_min<br>_G_ass||1.1<br>12|||_I_C= 6 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|_OIP_3<br>_OP_1dB||27.5<br>12.5||dBm|_I_C= 25 mA,_Z_S_= Z_L= 50 Ω| _Note: G_ ms _= IS_ 21 _/ S_ 12 _I for k < 1; G_ ma _= IS_ 21 _/ S_ 12 _I(k-(k_[2] _-1)_[1/2] _) for k > 1. In order to get the NF_ min _values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP_ 3 _value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz._ Datasheet Revision 3.0 2019-01-25 8 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3.4 Characteristic DC diagrams** **==> picture [354 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>160µA<br>140µA<br>25<br>120µA<br>20 100µA<br>80µA<br>15<br>60µA<br>10 40µA<br>20µA<br>5<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>V [V]<br>CE<br> [mA]<br>C<br>I<br>**----- End of picture text -----**<br> **Figure 3 Collector current vs. collector emitter voltage** _**I**_ **C = f(** _**V**_ **CE),** _**I**_ **B = parameter** **==> picture [358 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>10<br>2<br>10<br>0 1 2<br>10 10 10<br>I [mA]<br>c<br>FE<br>h<br>**----- End of picture text -----**<br> **Figure 4** **DC current gain** _**h**_ **FE = f(** _**I**_ **C),** _**V**_ **CE = 3 V** Datasheet Revision 3.0 2019-01-25 9 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [512 x 630] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>10<br>1<br>10<br>0<br>10<br>−1<br>10<br>−2<br>10<br>−3<br>10<br>−4<br>10<br>0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9<br>V [V]<br>BE<br>Figure 5 Collector current vs. base emitter forward voltage I C = f( V BE), V CE = 2 V<br>0<br>10<br>−1<br>10<br>−2<br>10<br>−3<br>10<br>−4<br>10<br>−5<br>10<br>−6<br>10<br>−7<br>10<br>0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9<br>V [V]<br>BE<br> [mA]<br>C<br>I<br> [mA]<br>B<br>I<br>**----- End of picture text -----**<br> **Figure 6 Base current vs. base emitter forward voltage** _**I**_ **B = f(** _**V**_ **BE),** _**V**_ **CE = 2 V** Datasheet Revision 3.0 2019-01-25 10 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [366 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> −9<br>10<br>−10<br>10<br>−11<br>10<br>−12<br>10<br>−13<br>10<br>0.6 0.7 0.8 0.9 1 1.1 1.2<br>V [V]<br>EB<br> [A]<br>B<br>I<br>**----- End of picture text -----**<br> **Figure 7 Base current vs. base emitter reverse voltage** _**I**_ **B = f(** _**V**_ **EB),** _**V**_ **CE = 2 V** Datasheet Revision 3.0 2019-01-25 11 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3.5 Characteristic AC diagrams** **==> picture [344 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>40 4.00V<br> 3.50V<br>35<br> 3.00V<br>30<br>25<br> 2.50V<br>20<br>15<br> 2.00V<br>10<br>5 1.00V<br>0<br>0 10 20 30 40 50 60<br>I [mA]<br>C<br> [GHz]<br>T<br>f<br>**----- End of picture text -----**<br> **Figure 8 Transition frequency** _**f**_ **T = f(** _**I**_ **C),** _**f**_ **= 2 GHz,** _**V**_ **CE = parameter** **==> picture [344 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25<br>20<br>15<br>10<br>2V, 1500MHz<br>3V, 1500MHz<br>5 2V, 2400MHz<br>3V, 2400MHz<br>0<br>0 5 10 15 20 25 30 35 40<br>I [mA]<br>C<br> [dBm]<br>3<br>OIP<br>**----- End of picture text -----**<br> **Figure 9** **3rd order intercept point** _**OIP**_ **3 = f(** _**I**_ **C),** _**Z**_ **S =** _**Z**_ **L= 50 Ω,** _**V**_ **CE,** _**f**_ **= parameters** Datasheet Revision 3.0 2019-01-25 12 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [512 x 630] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25<br>20<br>15<br>10<br>21<br>19 20 19<br>5<br>1 1.5 2 2.5 3 3.5 4<br>V [V]<br>CE<br>Figure 10 3rd order intercept point at output OIP 3 [dBm] = f( I C , V CE), Z S = Z L = 50 Ω, f = 2.4 GHz<br>30<br>25<br>20<br>15<br>10<br>5<br>1 1.5 2 2.5 3 3.5 4<br>V [V]<br>CE<br>25<br>23<br>22 22<br>20<br>10<br>9<br>8<br>7<br>6 6<br>5 5<br>4 4<br>3 3 3<br>2 2<br>1 1<br>0 0<br>−1 −1<br>23<br>18<br>11<br>9<br>8<br>7<br>2<br>1<br>0<br>−1<br>21<br>19<br>4<br>3<br>2<br>24<br>12<br>5<br>27<br>25<br>6<br>26<br>10<br>13<br>16<br>24<br>11<br>28<br>27<br>23<br>1718 22<br>2<br>3<br>15 19<br>9<br>20 24<br>4<br>21<br>−2<br>10<br>25<br>0<br>26<br>5<br>14<br>1<br>1213<br>23<br>11<br>15<br>11<br>28<br>16<br>27<br>10<br>5<br>6<br>89<br>6<br>17<br>21<br>7<br>18<br>8<br>19<br>21<br>26<br>22<br>20<br>7<br>22<br>23<br>20<br>17 18<br>19<br>24<br>9<br>8<br>12<br>25<br> [mA]<br>C<br>I<br> [mA]<br>C<br>I<br>**----- End of picture text -----**<br> **Figure 11 Compression point at output** _**OP**_ **1dB [dBm] = f(** _**I**_ **C,** _**V**_ **CE),** _**Z**_ **S =** _**Z**_ **L = 50 Ω,** _**f**_ **= 2.4 GHz** Datasheet Revision 3.0 2019-01-25 13 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [512 x 630] intentionally omitted <==** **----- Start of picture text -----**<br> 0.2<br>0.16<br>0.12<br>0.08<br>0.04<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>V [V]<br>CB<br>Figure 12 Collector base capacitance C CB = f( V CB), f = 1 MHz<br>40<br>35<br>30<br>G<br>ms<br>25<br>20<br>G<br>ma<br>15<br>2<br>|S |<br>21<br>10<br>5<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>f [GHz]<br> [pF]<br>CB<br>C<br>G [dB]<br>**----- End of picture text -----**<br> **Figure 13** **Gain** _**G**_ **ma,** _**G**_ **ms, I** _**S**_ **21I[2] = f(** _**f**_ **),** _**V**_ **CE = 3 V,** _**I**_ **C = 25 mA** Datasheet Revision 3.0 2019-01-25 14 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [344 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>40<br> 0.15GHz<br>35<br> 0.45GHz<br>30<br> 0.90GHz<br>25 1.50GHz<br> 1.90GHz<br>20 2.40GHz<br> 3.50GHz<br>15<br> 5.50GHz<br>10<br> 10.00GHz<br>5<br>0<br>0 10 20 30 40 50 60<br>I [mA]<br>C<br> [dB]<br>max<br>G<br>**----- End of picture text -----**<br> **Figure 14 Maximum power gain** _**G**_ **max = f(** _**I**_ **C),** _**V**_ **CE = 3 V,** _**f**_ **= parameter in GHz** **==> picture [342 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br> 0.15GHz<br>35<br> 0.45GHz<br>30<br> 0.90GHz<br> 1.50GHz<br>25<br> 1.90GHz<br> 2.40GHz<br>20<br> 3.50GHz<br>15<br> 5.50GHz<br>10<br> 10.00GHz<br>5<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>V [V]<br>CE<br> [dB]<br>max<br>G<br>**----- End of picture text -----**<br> **Figure 15 Maximum power gain** _**G**_ **max = f(** _**V**_ **CE),** _**I**_ **C = 25 mA,** _**f**_ **= parameter in GHz** Datasheet Revision 3.0 2019-01-25 15 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [512 x 630] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1.5<br>0.5 2<br>0.4 9.0 10.0<br>8.0 3<br>0.3 7.0 9.0 10.0<br>6.0 8.0 4<br>7.0<br>0.2 6.0 5<br>5.0 5.0<br>0.03 to 10 GHz<br>4.0<br>0.1 10<br>4.0<br>3.0<br>0.1 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5<br>0<br>2.0 0.03 0.03<br>3.0<br>−0.1 −10<br>1.0<br>−0.2 −5<br>2.0<br>−4<br>−0.3<br>−3<br>1.0<br>−0.4<br>−0.5 −2<br>−1.5<br>6.0mA<br>−1<br>25mA<br>Figure 16 Input reflection coefficient S 11 = f( f ), V CE = 3 V, I C = 6 / 25 mA<br>1<br>1.5<br>0.5 2<br>0.4<br>3<br>0.3<br>4<br>0.2 0.45 to 10 GHz 5<br>0.1 3.5 2.4 1.9 1.5 10<br>0.9<br>4.5<br>0.45<br>0.1 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5<br>0 0.5<br>0.9<br>5.5 1.5<br>1.9<br>2.4<br>−0.1 3.5 −10<br>4.5<br>5.5<br>7.0 7.0<br>8.0<br>−0.2 9.0 10.0 −5<br>8.0<br>−4<br>−0.3 9.0 10.0<br>−3<br>−0.4<br>−0.5 −2<br>−1.5<br> 6mA<br>−1<br> 25mA<br>**----- End of picture text -----**<br> **Figure 17 Source impedance for minimum noise figure** _**Z**_ **S,opt = f(** _**f**_ **),** _**V**_ **CE = 3 V,** _**I**_ **C = 6 / 25 mA** Datasheet Revision 3.0 2019-01-25 16 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [315 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1.5<br>0.5 2<br>0.4<br>3<br>0.3<br>4<br>0.2 5<br>10.0<br>0.03 to 10 GHz<br>0.1 10.0 9.0 10<br>8.0<br>9.0<br>7.0<br>0 0.1 0.2 0.3 0.4 0.5 7.08.0 1 6.05.04.01.5 2 3 4 5 0.03 0.03<br>6.0 3.0<br>−0.1 5.0 2.0 −10<br>4.0<br>1.0<br>3.0<br>−0.2 −5<br>2.0<br>1.0 −4<br>−0.3<br>−3<br>−0.4<br>−0.5 −2<br>−1.5<br>−1 6.0mA<br>25mA<br>**----- End of picture text -----**<br> **Figure 18 Output reflection coefficient** _**S**_ **22 = f(** _**f**_ **),** _**V**_ **CE = 3 V,** _**I**_ **C = 6 / 25 mA** **==> picture [352 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1.8<br>1.6<br>1.4<br>1.2<br>1<br>0.8<br>I = 25mA<br>0.6 C<br>I = 6.0mA<br>C<br>0.4<br>0.2<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>f [GHz]<br> [dB]<br>min<br>NF<br>**----- End of picture text -----**<br> **Figure 19** **Noise figure** _**NF**_ **min = f(** _**f**_ **),** _**Z**_ **S =** _**Z**_ **S,opt,** _**V**_ **CE = 3 V,** _**I**_ **C = 6 / 25 mA** Datasheet Revision 3.0 2019-01-25 17 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [348 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>f = 10GHz<br>f = 5.5GHz<br>2.5 f = 3.5GHz<br>f = 2.4GHz<br>2<br>1.5<br>1<br>f = 1.9GHz<br>f = 1.5GHz<br>0.5<br>f = 0.9GHz<br>f = 0.45GHz<br>0<br>0 5 10 15 20 25 30 35 40 45<br>I [mA]<br>C<br> [dB]<br>min<br>NF<br>**----- End of picture text -----**<br> **Figure 20 Noise figure** _**NF**_ **min = f(** _**I**_ **C),** _**Z**_ **S =** _**Z**_ **S,opt,** _**V**_ **CE = 3 V,** _**f**_ **= parameter in GHz** **==> picture [372 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5<br>3<br>f = 10GHz<br>f = 5.5GHz<br>2.5<br>f = 3.5GHz<br>f = 2.4GHz<br>2<br>1.5<br>1<br>f = 1.9GHz<br>f = 1.5GHz<br>0.5<br>f = 0.9GHz<br>f = 0.45GHz<br>0<br>0 5 10 15 20 25 30 35 40 45<br> [dB]<br>50<br>NF<br>**----- End of picture text -----**<br> **Figure 21** **Noise figure** _**NF**_ **50 = f(** _**I**_ **C),** _**Z**_ **S = 50 Ω,** _**V**_ **CE = 3 V,** _**f**_ **= parameter in GHz** _Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T_ A _= 25 °C._ Datasheet Revision 3.0 2019-01-25 18 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **4 Package information SOT343** ## **Package information SOT343** **==> picture [190 x 124] intentionally omitted <==** **----- Start of picture text -----**<br> i A 1.25±0.1<br>i 0.1 MIN. T bari 0.1 t_!<br>Somf 0.2 A e 2.1 t ±0.1 ,<br>i 7<br>p<br>c y p a<br>MOLD FLASH, PROTRUSION OR GATE BURRS OF 0.2 MM MAXIMUM PER SIDE ARE NOT INCLUDED<br>ALL DIMENSIONS ARE IN UNITS MM<br>THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ ]<br>±0.1<br>0.9<br>+0.10 -0.05 MAX.<br>0.15 0.1<br>0.1<br>0.15 3x<br>3 2<br>0.1<br>2±0.2 1.3<br>4 1<br>+0.10 -0.05 +0.10 -0.05<br>0.6 0.3<br>**----- End of picture text -----**<br> ## **Figure 22** ## **Package outline** ## **Figure 23** ## **Foot print** **==> picture [142 x 31] intentionally omitted <==** **----- Start of picture text -----**<br> = A TYPE CODE<br>NOTE OF MANUFACTURER<br>MONTH<br>YEAR 7<br>**----- End of picture text -----**<br> ## **Figure 24 Marking layout example** **==> picture [347 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>2 0.2<br>(Oo L __ +<br>( == )OOTe ) O& r=1<br>(-EFEHe E/|) @<br>PIN 1 2.15 1.1<br>INDEX MARKING<br>ALL DIMENSIONS ARE IN UNITS MM<br>THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ a e ]<br>Figure 25 Tape dimensions<br>8<br>2.3<br>**----- End of picture text -----**<br> Datasheet Revision 3.0 2019-01-25 19 **BFP640 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** ## **Revision history** |**Document**<br>**version**|**Date of**<br>**release**|**Description of changes**| |---|---|---| |Revision 3.0|2019-01-25|New datasheet layout.| Datasheet Revision 3.0 2019-01-25 20 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2019-01-25 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding the **© 2019 Infineon Technologies AG** application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of **All Rights Reserved.** any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-igo1526291229354** Infineon Technologies in customer’s applications. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 21, 2026
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