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BFP620H7764XTSA1
Bipolar - RF Transistor, NPN, 2.3 V, 65 GHz, 185 mW, 80 mA, SOT-343
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- Manufacturer: INFINEON
- Product type: Bipolar RF Transistors
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.3V; Transition Frequency ft:65GHz; Power Dissipation Pd:185mW; DC Collector Current:80mA; DC Current Gain hFE:110hFE
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 185mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 65GHz
- Transistor Case Style: SOT-343
- DC Current Gain hFE Min: 110hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 80mA
- Collector Emitter Voltage Max: 2.3V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.191 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **BFP620** ## **Surface mount high linearity silicon NPN RF bipolar transistor** Order now © ree ><) Simulation et) Support ## **Product description** The BFP620 is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. Its high linearity characteristics and collector design make the device suitable for a wide range of wireless applications. It remains cost competitive without compromising on ease of use. ## **Feature list** - Minimum noise figure _NF_ min = 0.7 dB at 1.8 GHz, 1.5 V, 5 mA - High gain _G_ ms = 21.5 dB at 1.8 GHz, 1.5 V, 50 mA - _OIP_ 3 = 25.5 dBm at 1.8 GHz, 2 V, 50 mA ## **Product validation** Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. ## **Potential applications** - Low noise amplifiers (LNAs) in SDARS receivers - LNAs for wireless communications - LNAs for ISM band applications ## **Device information** |**Product name / Ordering code**|**Package**|**Pin configuration**|**Pin configuration**|**Pin configuration**|**Pin configuration**|**Marking**|**Pieces / Reel**| |---|---|---|---|---|---|---|---| |BFP620 / BFP620H7764XTSA1|SOT343|1 = B|2 = E|3 = C|4 = E|R2s|3000| _**Attention** :_ _**ESD (Electrostatic discharge) sensitive device, observe handling precautions**_ Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** Revision 2.0 2019-01-25 **BFP620 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Product description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Feature list**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Device information**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Absolute maximum ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**2**|**Thermal characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4| |**3**|**Electrical characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |3.1|DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |3.2|General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |3.3|Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7| |3.4|Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8| |**4**|**Package information SOT343**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| Datasheet Revision 2.0 2019-01-25 2 **BFP620 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Absolute maximum ratings** ## **1 Absolute maximum ratings** |**Table 2**<br>**Absolute maximum ratings at****_T_A**|**Table 2**<br>**Absolute maximum ratings at****_T_A**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Max.**||| |Collector emitter voltage|_V_CEO|–|2.3|V|Open base| ||||2.1||_T_A= -55 °C, open base| |Collector emitter voltage|_V_CES||7.5||E-B short circuited| |Collector base voltage|_V_CBO||7.5||Open emitter| |Emitter base voltage|_V_EBO||1.2||Open collector| |Base current|_I_B||3|mA|–| |Collector current|_I_C||80||| |Total power dissipation**_1)_**|_P_tot||185|mW|_T_S≤ 95 °C| |Junction temperature|_T_J||150|°C|–| |Storage temperature|_T_Stg|-55|||| _**Attention** :_ _**Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit.**_ > 1 _T_ S is the soldering point temperature. _T_ S is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 2.0 Revision 2.0 2019-01-25 **BFP620 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Thermal characteristics** ## **2 Thermal characteristics** **==> picture [512 x 419] intentionally omitted <==** **----- Start of picture text -----**<br> Table 3 Thermal resistance<br>Parameter Symbol Values Unit Note or test condition<br>Min. Typ. Max.<br>Junction - soldering point R thJS – 300 – K/W –<br>200<br>mW<br>160<br>120<br>80<br>40<br>0<br>0 20 40 60 80 100 120 °C 150<br>T S<br>tot<br>P<br>**----- End of picture text -----**<br> **Figure 1 Total power dissipation** _**P**_ **tot = f(** _**T**_ **s)** Datasheet Revision 2.0 2019-01-25 4 **BFP620 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Thermal characteristics** **==> picture [225 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1]<br>D = 0<br>0.005<br>0,01<br>0,02<br>0,05<br>0,1<br>0,2<br>0,5<br>10 0<br>10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] °C 10 [0]<br>t p<br>totDC<br>P<br>/<br>totmax<br>P<br>**----- End of picture text -----**<br> **Figure 2** **Permissible pulse load** _**P**_ **tot,max /** _**P**_ **tot,DC = f(** _**t**_ **p)** **==> picture [275 x 326] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3<br>K/W<br>D = 0.5<br>0.2<br>0.1<br>10 2 0.05<br>0.02<br>0.01<br>0.005<br>0<br>10 1<br>10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] °C 10 [0]<br>t<br>p<br>thJS<br>R<br>**----- End of picture text -----**<br> **Figure 3** **Permissible pulse load** _**R**_ **thJS = f(** _**t**_ **p)** Datasheet Revision 2.0 2019-01-25 5 **BFP620 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3 Electrical characteristics** ## **3.1 DC characteristics** |**Table 4**<br>**DC characteristics at****_T_A = 25 °C**|**Table 4**<br>**DC characteristics at****_T_A = 25 °C**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit **|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Collector emitter breakdown voltage|_V_(BR)CEO|2.3|2.8|–|V|_I_C= 1 mA,_I_B= 0,<br>open base| |Collector emitter leakage current|_I_CES|–|–|10**_2)_**|μA|_V_CE= 7.5 V,_V_BE= 0,<br>E-B short circuited| ||||0.001|0.04**_2)_**||_V_CE= 5 V,_V_BE= 0,<br>EB short circuited| |Collector base leakage current|_I_CBO||1|40**_2)_**|nA|_V_CB= 5 V,_I_E= 0,<br>open emitter| |Emitter base leakage current|_I_EBO||10|900**_2)_**||_V_EB= 0.5 V,_I_C= 0,<br>open collector| |DC current gain|_h_FE|110|180|270||_V_CE= 1.5 V,_I_C= 50 mA,<br>pulse measured| ## **3.2 General AC characteristics** **Table 5 General AC characteristics at** _**T**_ **A = 25 °C** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note or test condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Transition frequency|_f_T|–|65|–|GHz|_V_CE= 1.5 V,_I_C= 50 mA,<br>_f_= 1 GHz| |Collector base capacitance|_C_CB||0.12|0.2|pF|_V_CB= 2 V,_V_BE= 0,<br>_f_= 1 MHz,<br>emitter grounded| |Collector emitter capacitance|_C_CE||0.22|–||_V_CE= 2 V,_V_BE= 0,<br>_f_= 1 MHz,<br>base grounded| |Emitter base capacitance|_C_EB||0.46|||_V_EB= 0.5 V,_V_CB= 0,<br>_f_= 1 MHz,<br>collector grounded| > 2 Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 6 Revision 2.0 2019-01-25 **BFP620 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3.3 Frequency dependent AC characteristics** Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, _T_ A = 25 °C. |IN|||VB|B<br>(Pin 1)<br>E<br>Top View|B<br>(Pin 1)<br>E<br>Top View|C<br>E<br>|C<br>E<br>|VC|VC||OUT| |---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||Bias-T||| ||||||||||||| ||||||||||||| |||Bias-T|||||||||| ||||||||||||| ||||||||||||| |**Figure 4**<br>**Testing circuit**|||||||||||| |**Table 6**<br>**AC characteristics,****_V_CE = 1.5 V,****_f_ =**||||||**1.8 GHz**|||||| |**Parameter**|||||**Symbol**||**Values**|||**Unit**|**Note or test condition**| |||||||**Min.**|**Typ.**|**Max.**|||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|||||_G_ms<br>|_S_21|2|–|21.5<br>20|–||dB|_I_C= 50 mA| |Noise figure<br>•<br>Minimum noise figure|||||_NF_min||0.7||||_I_C= 5 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|||||_OIP_3<br>_OP_1dB||25.5<br>14.5|||dBm|_I_C= 50 mA,_V_CE= 2 V,<br>_Z_S=_Z_L= 50| **Table 7** ## **AC characteristics,** _**V**_ **CE = 1.5 V,** _**f**_ **= 6 GHz** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note or test condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|_G_ms<br>|_S_21|2|–|11<br>9.5|–|dB|_I_C= 50 mA| |Noise figure<br>•<br>Minimum noise figure|_NF_min||1.3|||_I_C= 5 mA| _Note: G_ ms _= IS_ 21 _/ S_ 12 _I for k < 1; G_ ma _= IS_ 21 _/ S_ 12 _I(k-(k_[2] _-1)_[1/2] _) for k > 1. In order to get the NF_ min _values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP_ 3 _value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz._ Datasheet Revision 2.0 2019-01-25 7 **BFP620 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3.4 Characteristic AC diagrams** **==> picture [247 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> 65<br>GHz<br>55 1.3 to 2.3<br>50<br>45<br>1<br>40<br>35<br>30<br>25 0.8<br>0.5<br>20<br>15<br>0.3<br>10<br>5<br>0<br>0 10 20 30 40 50 60 70 80 mA 100<br>I C<br>f T<br>**----- End of picture text -----**<br> **Figure 5 Transition frequency** _**f**_ **T = f(** _**I**_ **C),** _**f**_ **= 1 GHz,** _**V**_ **CE = parameter** **==> picture [239 x 285] intentionally omitted <==** **Figure 6** **3rd order intercept point** _**OIP**_ **3 = f(** _**I**_ **C),** _**Z**_ **S =** _**Z**_ **L = 50 Ω,** _**V**_ **CE,** _**f**_ **= parameters** Datasheet Revision 2.0 2019-01-25 8 **BFP620 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [216 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 27<br>2.3V<br>dBm<br>1.8V<br>21<br>18<br>15 1.3V<br>12<br>0.8V<br>9<br>6<br>3<br>0<br>0 10 20 30 40 50 60 70 80 mA 100<br>I C<br>3<br>OIP<br>**----- End of picture text -----**<br> ## **Figure 7 3rd order intercept point at output** _**OIP**_ **3 = f(** _**I**_ **C ,** _**V**_ **CE),** _**Z**_ **S =** _**Z**_ **L = 50 Ω,** _**f**_ **= 900 MHz** **==> picture [238 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 0.40<br>pF<br>0.30<br>0.20<br>0.10<br>0<br>0 1 2 3 4 5 V 7<br>V CB<br>CB<br>C<br>**----- End of picture text -----**<br> **Figure 8 Collector base capacitance** _**C**_ **CB = f(** _**V**_ **CB),** _**f**_ **= 1 MHz** Datasheet Revision 2.0 2019-01-25 9 **BFP620 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [238 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 55<br>dB<br>45<br>35<br>Gms<br>25<br>|S21|² Gma<br>15<br>5<br>0 1 2 3 4 GHz 6<br>f<br>G<br>**----- End of picture text -----**<br> **Figure 9 Gain** _**G**_ **ma,** _**G**_ **ms, I** _**S**_ **21I[2] = f(** _**f**_ **),** _**V**_ **CE = 1.5 V,** _**I**_ **C = 50 mA** **==> picture [240 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>dB<br>0.9<br>24<br>1.8<br>20<br>2.4<br>16 3<br>4<br>12 5<br>6<br>8<br>0 10 20 30 40 50 60 70 mA 90<br>I C<br>G<br>**----- End of picture text -----**<br> **Figure 10** **Maximum power gain** _**G**_ **max = f(** _**I**_ **C),** _**V**_ **CE = 1.5 V,** _**f**_ **= parameter in GHz** Datasheet Revision 2.0 2019-01-25 10 **BFP620 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [241 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>0.9<br>dB<br>1.8<br>20<br>2.4<br>3<br>15<br>4<br>5<br>6<br>10<br>5<br>0<br>-5<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 V 2.6<br>V CE<br>G<br>**----- End of picture text -----**<br> **Figure 11 Maximum power gain** _**G**_ **max = f(** _**V**_ **CE),** _**I**_ **C = 50 mA,** _**f**_ **= parameter in GHz** **==> picture [288 x 266] intentionally omitted <==** **Figure 12 Source impedance for minimum noise figure** _**Z**_ **S,opt = f(** _**f**_ **),** _**V**_ **CE = 3 V,** _**I**_ **C = 6 / 50 mA** Datasheet Revision 2.0 2019-01-25 11 **BFP620 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [239 x 286] intentionally omitted <==** **Figure 13 Noise figure** _**NF**_ **min = f(** _**f**_ **),** _**V**_ **CE = 2 V,** _**Z**_ **S =** _**Z**_ **S,opt,** _**I**_ **C = 6 / 50 mA** **==> picture [238 x 284] intentionally omitted <==** **Figure 14** **Noise figure** _**NF**_ **min = f(** _**I**_ **C),** _**V**_ **CE = 2 V,** _**Z**_ **S =** _**Z**_ **S,opt,** _**f**_ **= parameter in GHz** _Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T_ A _= 25 °C._ Datasheet Revision 2.0 2019-01-25 12 **BFP620 Surface mount high linearity silicon NPN RF bipolar transistor** **4 Package information SOT343** ## **Package information SOT343** **==> picture [190 x 124] intentionally omitted <==** **----- Start of picture text -----**<br> i A 1.25±0.1<br>i 0.1 MIN. T bari 0.1 t_!<br>Somf 0.2 A e 2.1 t ±0.1 ,<br>i 7<br>p<br>c y p a<br>MOLD FLASH, PROTRUSION OR GATE BURRS OF 0.2 MM MAXIMUM PER SIDE ARE NOT INCLUDED<br>ALL DIMENSIONS ARE IN UNITS MM<br>THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ ]<br>±0.1<br>0.9<br>+0.10 -0.05 MAX.<br>0.15 0.1<br>0.1<br>0.15 3x<br>3 2<br>0.1<br>2±0.2 1.3<br>4 1<br>+0.10 -0.05 +0.10 -0.05<br>0.6 0.3<br>**----- End of picture text -----**<br> **==> picture [347 x 433] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 15 Package outline<br>7, 3On 0.65,<br>ae | ea<br>05 [os | : Lal [ce |<br> wovrer [7] solder mask stencil apertures<br>Figure 16 Foot print<br>[-=[4 A TYPE CODE<br>NOTE OF MANUFACTURER<br>MONTH<br>YEAR 7<br>i (|<br>=<br>Figure 17 Marking layout example<br>4<br>2 0.2<br>(Oo L __ +<br>( == )OOTe ) O& r=1<br>(-EFEHe E/|) @<br>PIN 1 2.15 1.1<br>INDEX MARKING<br>ALL DIMENSIONS ARE IN UNITS MM<br>THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ a e ]<br>Figure 18 Tape dimensions<br>8<br>2.3<br>**----- End of picture text -----**<br> **Figure 17 Marking layout example** Datasheet Revision 2.0 2019-01-25 13 **BFP620 Surface mount high linearity silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** ## **Revision history** |**Document**<br>**version**|**Date of**<br>**release**|**Description of changes**| |---|---|---| |Revision 2.0|2019-01-25|New datasheet layout.| Datasheet Revision 2.0 2019-01-25 14 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2019-01-25 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding the **© 2019 Infineon Technologies AG** application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of **All Rights Reserved.** any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ebp1526288323555** Infineon Technologies in customer’s applications. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 21, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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