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BFP540ESDH6327XTSA1
Bipolar - RF Transistor, NPN, 4.5 V, 30 GHz, 250 mW, 80 mA, SOT-343
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- Manufacturer: INFINEON
- Product type: Bipolar RF Transistors
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.5V; Transition Frequency ft:30GHz; Power Dissipation Pd:250mW; DC Collector Current:80mA; DC Current Gain hFE:50hFE;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 250mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 30GHz
- Transistor Case Style: SOT-343
- DC Current Gain hFE Min: 50hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 80mA
- Collector Emitter Voltage Max: 4.5V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.212 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **BFP540ESD** ## **Surface mount robust silicon NPN RF bipolar transistor** Order now © ree ><) Simulation et) Support ## **Product description** The BFP540ESD is a low noise device based on a grounded emitter (SIEGET[™] ) that is part of Infineon’s established fifth generation RF bipolar transistor family. Its ESD structure provides high robustness. It remains cost competitive without compromising on ease of use. ## **Feature list** - Minimum noise figure _NF_ min = 0.9 dB at 1.8 GHz, 2 V, 5 mA - High gain _G_ ms = 21.5 dB at 1.8 GHz, 2 V, 20 mA - _OIP_ 3 = 24.5 dBm at 1.8 GHz, 2 V, 20 mA - High ESD robustness, typical 1 kV (HBM) ## **Product validation** Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. ## **Potential applications** - Radio-frequency oscillators such as local oscillator in LNB - Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio - LNAs for wireless communications such as cordless phones ## **Device information** |**Table 1**<br>**Part information**|||||||| |---|---|---|---|---|---|---|---| |**Product name / Ordering code**|**Package**|**Pin configuration**||||**Marking**|**Pieces / Reel**| |BFP540ESD / BFP540ESDH6327XTSA1|SOT343|1 = B|2 = E|3 = C|4 = E|AUs|3000| _**Attention** :_ _**ESD (Electrostatic discharge) sensitive device, observe handling precautions**_ Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** Revision 2.0 2019-01-25 **BFP540ESD Surface mount robust silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Product description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Feature list**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Device information**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Absolute maximum ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**2**|**Thermal characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4| |**3**|**Electrical characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |3.1|DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |3.2|General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |3.3|Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7| |3.4|Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8| |**4**|**Package information SOT343**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| Datasheet Revision 2.0 2019-01-25 2 **BFP540ESD Surface mount robust silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Absolute maximum ratings** ## **1 Absolute maximum ratings** |**Table 2**<br>**Absolute maximum ratings at****_T_A**|**Table 2**<br>**Absolute maximum ratings at****_T_A**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Max.**||| |Collector emitter voltage|_V_CEO|–|4.5|V|Open base| ||||4||_T_A= -55 °C, open base| |Collector emitter voltage|_V_CES||10||E-B short circuited| |Collector base voltage|_V_CBO||10||Open emitter| |Emitter base voltage|_V_EBO||1||Open collector| |Base current|_I_B||8|mA|–| |Collector current|_I_C||80||| |Total power dissipation**_1)_**|_P_tot||250|mW|_T_S≤ 77 °C| |Junction temperature|_T_J||150|°C|–| |Ambient temperature|_T_A|-55|||| |Storage temperature|_T_Stg||||| _**Attention** :_ _**Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit.**_ > 1 _T_ S is the soldering point temperature. _T_ S is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 2.0 Revision 2.0 2019-01-25 **BFP540ESD Surface mount robust silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Thermal characteristics** ## **2 Thermal characteristics** **==> picture [512 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> Table 3 Thermal resistance<br>Parameter Symbol Values Unit Note or test condition<br>Min. Typ. Max.<br>Junction - soldering point R thJS – 290 – K/W –<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 25 50 75 100 125 150<br>TS [°C]<br>Ptot [mW]<br>**----- End of picture text -----**<br> **Figure 1 Total power dissipation** _**P**_ **tot = f(** _**T**_ **S)** Datasheet Revision 2.0 2019-01-25 4 **BFP540ESD Surface mount robust silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Thermal characteristics** **==> picture [243 x 287] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3]<br>K/W<br>10 2<br>0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>0.01<br>0.005<br>D = 0<br>10 1<br>10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] s 10 [0]<br>t p<br>thJS<br>R<br>**----- End of picture text -----**<br> **Figure 2 Permissible pulse load** _**R**_ **thJS = f(** _**t**_ **p)** **==> picture [243 x 287] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1<br>D = 0<br>0.005<br>0.01<br>0.02<br>0.05<br>0.1<br>0.2<br>0.5<br>10 [0]<br>10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] s 10 [0]<br>t p<br>totDC<br>P<br>/<br>totmax<br>P<br>**----- End of picture text -----**<br> **Figure 3** **Permissible pulse load** _**P**_ **tot,max /** _**P**_ **tot,DC = f(** _**t**_ **p)** Datasheet Revision 2.0 2019-01-25 5 **BFP540ESD Surface mount robust silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3 Electrical characteristics** ## **3.1 DC characteristics** |**Table 4**<br>**DC characteristics at****_T_A = 25 °C**|**Table 4**<br>**DC characteristics at****_T_A = 25 °C**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Collector emitter breakdown voltage|_V_(BR)CEO|4.5|5|–|V|_I_C= 1 mA,_I_B= 0,<br>open base| |Collector emitter leakage current|_I_CES|–|–|10**_2)_**|μA|_V_CE= 10 V,_V_BE= 0,<br>E-B short circuited| |Collector base leakage current|_I_CBO|||100**_2)_**|nA|_V_CB= 5 V,_I_E= 0,<br>open emitter| |Emitter base leakage current|_I_EBO|||10**_2)_**|μA|_V_EB= 0.5 V,_I_C= 0,<br>open collector| |DC current gain|_h_FE|50|110|170||_V_CE= 3.5 V,_I_C= 20 mA,<br>pulse measured| ## **3.2 General AC characteristics** |**Table 5**<br>**General AC characteristics at****_T_A =**|**Table 5**<br>**General AC characteristics at****_T_A =**|**25 °C**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Transition frequency|_f_T|21|30|–|GHz|_V_CE= 4 V,_I_C= 50 mA,<br>_f_= 1 GHz| |Collector base capacitance|_C_CB|–|0.14|0.24|pF|_V_CB= 2 V,_V_BE= 0,<br>_f_= 1 MHz,<br>emitter grounded| |Collector emitter capacitance|_C_CE||0.41|–||_V_CE= 2 V,_V_BE= 0,<br>_f_= 1 MHz,<br>base grounded| |Emitter base capacitance|_C_EB||0.59|||_V_EB= 0.5 V,_V_CB= 0,<br>_f_= 1 MHz,<br>collector grounded| > 2 Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet Revision 2.0 2019-01-25 6 **BFP540ESD Surface mount robust silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3.3 Frequency dependent AC characteristics** Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, _T_ A = 25 °C. **==> picture [380 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> VC<br>Top View<br>Bias-T<br>OUT<br>E C<br>VB<br>B E<br>Bias-T (Pin 1)<br>IN<br>**----- End of picture text -----**<br> ## **Figure 4 Testing circuit** |**Table 6**<br>**AC characteristics,****_V_CE = 2 V,****_f_ = 1.8 GHz**|**Table 6**<br>**AC characteristics,****_V_CE = 2 V,****_f_ = 1.8 GHz**|**Table 6**<br>**AC characteristics,****_V_CE = 2 V,****_f_ = 1.8 GHz**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum stable power gain<br>•<br>Transducer gain|_G_ms<br>|_S_21|2|–<br>16|21.5<br>18.5|–|dB|_I_C= 20 mA| |Noise figure<br>•<br>Minimum noise figure|_NF_min|–|0.9|1.4||_I_C= 5 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|_OIP_3<br>_OP_1dB||24.5<br>11|–|dBm|_I_C= 20 mA,_Z_S=_Z_L= 50 Ω| **Table 7** ## **AC characteristics,** _**V**_ **CE = 2 V,** _**f**_ **= 3 GHz** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note or test condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum available power gain<br>•<br>Transducer gain|_G_ma<br>|_S_21|2|–|16<br>14|–|dB|_I_C= 20 mA| |Noise figure<br>•<br>Minimum noise figure|_NF_min||1.3|||_I_C= 5 mA| _Note: G_ ms _= IS_ 21 _/ S_ 12 _I for k < 1; G_ ma _= IS_ 21 _/ S_ 12 _I(k-(k_[2] _-1)_[1/2] _) for k > 1. In order to get the NF_ min _values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP_ 3 _value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz._ Datasheet Revision 2.0 2019-01-25 7 **BFP540ESD Surface mount robust silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3.4 Characteristic AC diagrams** **==> picture [236 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25<br>20<br>3 - 4.5 V<br>15<br>2.00 V<br>10<br>1.00 V<br>0.75 V<br>5<br>0.50 V<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>IC [mA]<br> [GHz]fT<br>**----- End of picture text -----**<br> **Figure 5 Transition frequency** _**f**_ **T = f(** _**I**_ **C),** _**f**_ **= 2 GHz,** _**V**_ **CE = parameter** **==> picture [234 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>4.00 V 2.00 V<br>25 3.00 V<br>1.50 V<br>20<br>1.00 V<br>15<br>10<br>5<br>0<br>0 10 20 30 40 50 60 70 80<br>IC [mA]<br> [dBm]IP3<br>**----- End of picture text -----**<br> **Figure 6** **3rd order intercept point** _**OIP**_ **3 = f(** _**I**_ **C),** _**Z**_ **S =** _**Z**_ **L = 50 Ω,** _**f**_ **= 900 MHz,** _**V**_ **CE = parameter** Datasheet Revision 2.0 2019-01-25 8 **BFP540ESD Surface mount robust silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [238 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 0.3<br>0.25<br>0.2<br>0.15<br>0.1<br>0.05<br>0<br>0 2 4 6 8 10 12 14<br>VCB [V]<br>[pF]<br>cb<br>C<br>**----- End of picture text -----**<br> **Figure 7 Collector base capacitance** _**C**_ **CB = f(** _**V**_ **CB),** _**f**_ **= 1 MHz** **==> picture [234 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>40<br>35<br>30<br>G<br>ms<br>25<br>20<br>G<br>ma<br>15<br>|S21| [2]<br>10<br>5<br>0 1 2 3 4 5 6<br>f [GHz]<br>G [dB]<br>**----- End of picture text -----**<br> **Figure 8** **Gain** _**G**_ **ma,** _**G**_ **ms, I** _**S**_ **21I[2] = f(** _**f**_ **),** _**V**_ **CE = 3 V,** _**I**_ **C = 25 mA** Datasheet Revision 2.0 2019-01-25 9 **BFP540ESD Surface mount robust silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [236 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 28<br>26<br>24 0.90 GHz<br>22<br>20<br>18<br>1.80 GHz<br>16<br>2.40 GHz<br>14<br>3.00 GHz<br>12<br>10 4.00 GHz<br>8 5.00 GHz<br>6.00 GHz<br>6<br>0 10 20 30 40 50 60 70 80 90 100<br>IC [mA]<br>G [dB]<br>**----- End of picture text -----**<br> **Figure 9** **Maximum power gain** _**G**_ **max = f(** _**I**_ **C),** _**V**_ **CE = 3 V,** _**f**_ **= parameter in GHz** **==> picture [233 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 28<br>0.90 GHz<br>26<br>24<br>22 1.80 GHz<br>20<br>2.40 GHz<br>18<br>16 3.00 GHz<br>14<br>4.00 GHz<br>12<br>5.00 GHz<br>10 6.00 GHz<br>8<br>6<br>0 1 2 3 4 5 6<br>VCE [V]<br>G [dB]<br>**----- End of picture text -----**<br> **Figure 10** **Maximum power gain** _**G**_ **max = f(** _**V**_ **CE),** _**I**_ **C = 20 mA,** _**f**_ **= parameter in GHz** Datasheet Revision 2.0 2019-01-25 10 **BFP540ESD Surface mount robust silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [293 x 287] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1.5<br>0.5 2<br>0.4<br>3<br>0.3<br>4<br>0.2 5<br>0.1 10<br>1.8GHz<br>2.4GHz<br>0.9GHz<br>0.1 0.2 0.3 0.4 0.53GHz 1 1.5 2 3 4 5<br>0<br>−0.1 4GHz Ic = 5.0mA −10<br>−0.2 5GHz Ic = 20mA −5<br>−4<br>−0.3<br>−3<br>−0.4 6GHz<br>−0.5 −2<br>−1.5<br>−1<br>**----- End of picture text -----**<br> **Figure 11 Source impedance for minimum noise figure** _**Z**_ **S,opt = f(** _**f**_ **),** _**V**_ **CE = 3 V,** _**I**_ **C = 5 / 20 mA** **==> picture [238 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1.8<br>1.6<br>1.4<br>1.2<br>1<br>0.8 IC = 20mA<br>IC = 5.0mA<br>0.6<br>0.4<br>0 1 2 3 4 5 6 7<br>f [GHz]<br>F [dB]<br>**----- End of picture text -----**<br> **Figure 12** **Noise figure** _**NF**_ **min = f(** _**f**_ **),** _**V**_ **CE = 3 V,** _**Z**_ **S =** _**Z**_ **S,opt,** _**I**_ **C = 5 / 20 mA** Datasheet Revision 2.0 2019-01-25 11 **BFP540ESD Surface mount robust silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [239 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4.5<br>4<br>3.5<br>3<br>2.5<br>2<br>1.5<br>f = 6GHz<br>f = 5GHz<br>1 f = 4GHz<br>f = 3GHz<br>f = 1.8GHz<br>0.5<br>f = 0.9GHz<br>0<br>0 10 20 30 40 50 60 70 80<br>Ic [mA]<br>F [dB]<br>**----- End of picture text -----**<br> **Figure 13** **Noise figure** _**NF**_ **min = f(** _**I**_ **C),** _**V**_ **CE = 3 V,** _**Z**_ **S =** _**Z**_ **S,opt,** _**f**_ **= parameter in GHz** **==> picture [238 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 4.5<br>4<br>3.5<br>3<br>2.5<br>2<br>1.5<br>1<br>ZS = 50 Ω<br>0.5 ZS = ZSopt<br>0<br>0 10 20 30 40 50 60 70 80<br>Ic [mA]<br>F [dB]<br>**----- End of picture text -----**<br> **Figure 14** **Noise figure** _**NF**_ **50 = f(** _**I**_ **C),** _**Z**_ **S = 50 Ω,** _**NF**_ **min = f(** _**I**_ **C),** _**Z**_ **S =** _**Z**_ **S,opt,** _**V**_ **CE = 3 V,** _**f**_ **= 1.8 GHz** _Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T_ A _= 25 °C._ Datasheet Revision 2.0 2019-01-25 12 **BFP540ESD Surface mount robust silicon NPN RF bipolar transistor** **4 Package information SOT343** ## **Package information SOT343** **==> picture [190 x 124] intentionally omitted <==** **----- Start of picture text -----**<br> i A 1.25±0.1<br>i 0.1 MIN. T bari 0.1 t_!<br>Somf 0.2 A e 2.1 t ±0.1 ,<br>i 7<br>p<br>c y p a<br>MOLD FLASH, PROTRUSION OR GATE BURRS OF 0.2 MM MAXIMUM PER SIDE ARE NOT INCLUDED<br>ALL DIMENSIONS ARE IN UNITS MM<br>THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ ]<br>±0.1<br>0.9<br>+0.10 -0.05 MAX.<br>0.15 0.1<br>0.1<br>0.15 3x<br>3 2<br>0.1<br>2±0.2 1.3<br>4 1<br>+0.10 -0.05 +0.10 -0.05<br>0.6 0.3<br>**----- End of picture text -----**<br> ## **Figure 15** ## **Package outline** **==> picture [347 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 16 Foot print<br>[-=[4 A TYPE CODE<br>NOTE OF MANUFACTURER<br>MONTH<br>YEAR 7<br>i (|<br>=<br>Figure 17 Marking layout example<br>4<br>2 0.2<br>(Oo L __ +<br>( == )OOTe ) O& r=1<br>(-EFEHe E/|) @<br>PIN 1 2.15 1.1<br>INDEX MARKING<br>ALL DIMENSIONS ARE IN UNITS MM<br>THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ a e ]<br>8<br>2.3<br>**----- End of picture text -----**<br> ## **Figure 17** ## **Figure 18 Tape dimensions** Datasheet Revision 2.0 2019-01-25 13 **BFP540ESD Surface mount robust silicon NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** ## **Revision history** |**Document**<br>**version**|**Date of**<br>**release**|**Description of changes**| |---|---|---| |Revision 2.0|2019-01-25|New datasheet layout.| Datasheet Revision 2.0 2019-01-25 14 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2019-01-25 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding the **© 2019 Infineon Technologies AG** application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of **All Rights Reserved.** any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-xhj1525440333512** Infineon Technologies in customer’s applications. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 21, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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