BFP420H6327XTSA1

Bipolar - RF Transistor, NPN, 5 V, 25 GHz, 210 mW, 60 mA, SOT-343

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Manufacturer: INFINEON
Product type: Bipolar RF Transistors
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:5V; Transition Frequency ft:25GHz; Power Dissipation Pd:210mW; DC Collector Current:60mA; DC Current Gain hFE:95hFE; RF Transistor Case:SOT-
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 4Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 210mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 25GHz
Transistor Case Style: SOT-343
DC Current Gain hFE Min: 95hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 60mA
Collector Emitter Voltage Max: 5V

Delivery and price
Units per pack	5000
Price	0.176 €
Current stock	1000+
Lead time	30 days

Datasheet

**BFP420** 

## **NPN Silicon RF Transistor** 

- For high gain low noise amplifiers 

- For oscillators up to 10 GHz 

- Noise figure _F_ = 1.1 dB at 1.8 GHz 

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3<br>2<br>4<br>1<br>**----- End of picture text -----**<br>


- outstanding _G_ ms = 21 dB at 1.8 GHz 

- Transition frequency _f_ T = 25 GHz 

- Gold metallization for high reliability 

- SIEGET  25 GHz fT - Line 

- Pb-free (RoHS compliant) package[1)] 

- Qualified according AEC Q101 

## **ESD** ( **E** lectro **s** tatic **d** ischarge) sensitive device, observe handling precaution! 

|**Maximum Ratings**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Collector-emitter voltage<br>_T_A> 0 °C<br>_T_A ≤0 °C|_V_CEO<br>Pf<br>ee|4.5<br>4.1<br>Pf<br>eee|V|
|Collector-emitter voltage|_V_CES<br>ee<br>ee|15<br>eee<br>eee||
|Collector-base voltage|_V_CBO<br>ee <br>ee|15<br> eee<br>eee||
|Emitter-base voltage|_V_EBO<br>ee <br>eee|1.5<br> eee<br>eee||
|Collector current|_I_C<br>a eee<br>ee|35<br>eee<br>eee|mA|
|Base current|_I_B<br>ee|3<br>eee||
|Total power dissipation2)<br>_T_S ≤107 °C|_P_tot<br>ee <br>ee|160<br> eee<br>eee|mW|
|Junction temperature|_T_j<br>ee<br>ee|150<br>eee<br>ee|°C|
|Ambient temperature|j<br>_T_A<br>ee <br>ee|-65 ... 150<br> eee<br>ee||
|Storage temperature|_T_stg<br>ee<br>a eee|-65 ... 150<br>ee<br>eee||



- 1Pb-containing package may be available upon special request 

> 2 _T_ S is measured on the collector lead at the soldering point to the pcb 

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**BFP420** 

|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction - soldering point1)|_R_thJS|≤260|K/W|



**Electrical Characteristics** at _T_ A = 25°C, unless otherwise specified 

|**Electrical Characteristics**at_T_A= 25°C,unless o|therwise s|pecified|pecified|pecified||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage<br>_I_C= 1 mA,_I_B= 0|_V_(BR)CEO|4.5|5|-|V|
|Collector-emitter cutoff current<br>_V_CE= 15 V,_V_BE= 0|_I_CES|-|-|10|µA|
|Collector-base cutoff current<br>_V_CB= 5 V,_I_E= 0|_I_CBO|-|-|100|nA|
|Emitter-base cutoff current<br>_V_EB= 0.5 V,_I_C= 0|_I_EBO|-|-|3|µA|
|DC current gain<br>_I_C= 20 mA,_V_CE= 4 V,pulse measured|_h_FE|60|95|130|-|



> 1For calculation of _R_ thJA please refer to Application Note Thermal Resistance 

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**BFP420** 

|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**AC Characteristics**(verified by random sampling)||||||
|Transition frequency<br>_I_C= 30 mA,_V_CE= 3 V,_f_= 2 GHz|_f_T|18|25|-|GHz|
|Collector-base capacitance<br>_V_CB= 2 V,_f_= 1 MHz,_V_BE= 0 ,<br>emitter grounded|_C_cb|-|0.15|0.3|pF|
|Collector emitter capacitance<br>_V_CE= 2 V,_f_= 1 MHz,_V_BE= 0 ,<br>base grounded|_C_ce|-|0.37|-||
|Emitter-base capacitance<br>_V_EB= 0.5 V,_f_= 1 MHz,_V_CB= 0 ,<br>collector grounded|_C_eb|-|0.55|-||
|Noise figure<br>_I_C= 5 mA,_V_CE= 2 V,_f_= 1.8 GHz,_Z_S=_Z_Sopt|_F_|-|1.1|-|dB|
|Power gain, maximum stable1)<br>_I_C= 20 mA,_V_CE= 2 V,_Z_S=_Z_Sopt,<br>_Z_L=_Z_Lopt,_f_= 1.8 GHz|_G_ms|-|21|-|dB|
|Insertion power gain<br>_V_CE= 2 V,_I_C= 20 mA,_f_= 1.8 GHz,<br>_Z_S=_Z_L= 50Ω||_S_21|2|14|17|-||
|Third order intercept point at output2)<br>_V_CE= 2 V,_I_C= 20 mA,_f_= 1.8 GHz,<br>_Z_S=_Z_L= 50Ω|_IP_3|-|22|-|dBm|
|1dB Compression point at output<br>_I_C= 20 mA,_V_CE= 2 V,_Z_S=_Z_L= 50Ω,<br>_f_= 1.8 GHz|_P_-1dB|-|12|-||



> 1 _G_ ms = | _S_ 21 / _S_ 12| 

2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 

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**BFP420** 

## **Simulation Data** 

For SPICE-model as well as for S-parameters including noise parameters refer to our internet website: **www.infineon.com/rf.models** . Please consult our website and download the latest version before actually starting your design. The simulation data have been generated and verified up to 10 GHz using typical devices. The BFP420 nonlinear SPICE-model reflects the typical DC- and RF-device performance with high accuracy. 

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**BFP420** 

## **Total power dissipation** _P_ tot = ƒ( _T_ S) 

## **Permissible Pulse Load** _R_ thJS =  ƒ( _t_ p) 

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200  10 3<br>mW<br>160  K/W<br>140<br>120<br>100  10 2<br>0.5<br>0.2<br>80  0.1<br>0.05<br>60  0.02<br>0.01<br>40  0.005<br>D = 0<br>20<br>0 10 1<br>0 20 40 60 80 100 120 °C 150 10  [-7 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>T S t p<br>tot thJS<br>P R<br>**----- End of picture text -----**<br>


## **Permissible Pulse Load** 

_P_ totmax/ _P_ totDC =  ƒ( _t_ p) 

**Collector-base capacitance** _C_ cb= ƒ( _V_ CB) _f_ = 1MHz 

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10 1<br>D = 0<br>0.005<br>- 0.010.02<br>0.05<br>0.1<br>0.2<br>0.5<br>10 0<br>10  [-7 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>t<br>p<br>totDC<br>/ P totmax<br>P<br>**----- End of picture text -----**<br>


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0.3<br>pF<br>0.2<br>0.15<br>0.1<br>0.05<br>0<br>0 1 2 V 4<br>V CB<br>cb<br>C<br>**----- End of picture text -----**<br>


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**BFP420** 

## **Transition frequency** _f_ T= ƒ( _I_ C) 

## _f_ = 2 GHz 

**Power gain** _G_ ma, _G_ ms, | _S_ 21|² = ƒ ( _f_ ) _V_ CE = 2 V, _I_ C = 20 mA 

## _V_ CE = parameter in V 

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30<br>GHz<br>2 to 4<br>1.5<br>24<br>1<br>22<br>0.75<br>20<br>18<br>16<br>14<br>12  0.5<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30 mA 40<br>I C<br>f T<br>**----- End of picture text -----**<br>


**Power gain** _G_ ma, _G_ ms =  ƒ ( _I_ C) _V_ = 2V CE 

## _f_ = parameter in GHz 

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30<br>dB<br>0.9<br>24<br>22<br>1.8<br>20<br>18  2.4<br>16<br>3<br>14<br>4<br>12<br>5<br>10<br>6<br>8<br>6<br>4<br>2<br>0<br>0 4 8 12 16 20 24 28 32 mA 40<br>I C<br>G<br>**----- End of picture text -----**<br>


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44<br>40<br>36<br>32<br>Gms<br>28<br>24<br>20<br>Gma<br>16<br>|S21| [2]<br>12<br>8<br>4<br>0<br>0 1 2 3 4 5 6<br>f [GHz]<br>G [dB]<br>**----- End of picture text -----**<br>


**Power gain** _G_ ma, _G_ ms = ƒ ( _V_ CE) _I_ C = 20 mA 

## _f_ = parameter in GHz 

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30<br>dB<br>0.9<br>24<br>22  1.8<br>20<br>2.4<br>18<br>16  3<br>14  4<br>12<br>5<br>10  6<br>8<br>6<br>4<br>2<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 V 4.5<br>V CE<br>G<br>**----- End of picture text -----**<br>


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**BFP420** 

**Noise figure** _F_ =  ƒ( _I_ C) _V_ CE = 2 V, _Z_ S _= Z_ Sopt 

**Noise figure** _F_ =  ƒ( _I_ C) _V_ CE = 2 V, _f_ = 1.8 GHz 

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4 3<br>dB<br>dB<br>3<br>2<br>2.5<br>2 1.5<br>ZS = 50 Ohm<br>1.5 ZS = ZSopt<br>f = 6 GHz 1<br>f = 5 GHz<br>1 f = 4 GHz<br>f = 3 GHz<br>f = 2.4 GHz 0.5<br>0.5<br>f = 1.8 GHz<br>f = 0.9 GHz<br>0 0<br>0 4 8 12 16 20 24 28 32 mA 38 0 4 8 12 16 20 24 28 mA 36<br>I C I C<br>F F<br>**----- End of picture text -----**<br>


**Noise figure** _F_ =  ƒ( _f_ ) _V_ CE = 2 V, _Z_ S = _Z_ Sopt 

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3<br>dB<br>2<br>1.5<br>1<br>IC = 20 mA<br>IC = 5 mA<br>0.5<br>0<br>0 1 2 3 4 GHz 6<br>f<br>F<br>**----- End of picture text -----**<br>


**Source impedance** for min. noise figure vs. frequency _V_ CE = 2 V, _I_ C = 5 mA / 20 mA 

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+j50<br>+j25 +j100<br>+j10<br>2.4GHz<br>1.8GHz<br>0.9GHz<br>3GHz<br>0<br>10 25 50 100 0.45GHz<br>4GHz<br>5GHz<br>-j10<br>6GHz<br>-j25 -j100<br>-j50<br>**----- End of picture text -----**<br>


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**Package SOT343** 

**BFP420** 

## Package Outline 

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0.9 ±0.1<br>2 [±0.2]<br>0.1 MAX.<br>1.3<br>0.1<br>A<br>4 3<br>0.15<br>1 2<br>0.3 [+0.1] -0.05 0.15 [+0.1] -0.05<br>4x 0.6 -0.05+0.1<br>0.1 M 0.2 M A<br>±0.1  ±0.1<br>2.1 0.1 MIN. 1.25<br>**----- End of picture text -----**<br>


Foot Print 

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0.6<br>1.15<br>0.9<br>Manufacturer<br>2005, June<br>Date code (YM)<br>BGA420<br>Pin 1 Type code<br>4 0.2<br>Pin 1 2.15 1.1<br>0.8<br>1.6<br>8<br>2.3<br>**----- End of picture text -----**<br>


## Marking Layout (Example) 

## Standard Packing 

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 

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**BFP420** 

Edition 2009-12-02 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 2009. All Rights Reserved. 

## **Attention please!** 

The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. 

Terms of delivery and rights to technical change reserved. 

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. 

## **Information** 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( **www.infineon.com** ). 

## **Warnings** 

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. 

Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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Updated at April 21, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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