BFP405H6327XTSA1

**BFP405** 

## **Low Noise Silicon Bipolar RF Transistor** 

- For low current applications 

- For oscillators up to 12 GHz 

- Minimum noise figure _NF_ min = 1.25 dB at 1.8 GHz 

**==> picture [104 x 52] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>4<br>fae 1<br>**----- End of picture text -----**<br>


- Outstanding _G_ ms = 23 dB at 1.8 GHz 

- Pb-free (RoHS compliant) and halogen-free package 

- with visible leads 

- Qualification report according to AEC-Q101 available 

**ESD** ( **E** lectro **s** tatic **d** ischarge) sensitive device, observe handling precaution! 

|**Parameter**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Collector-emitter voltage<br>_T_A= 25 °C<br>_T_A= -55 °C|_V_CEO<br>S||4.5<br>4.1<br>S||V|
|Collector-emitter voltage|_V_CES<br>ee|15<br>ee||
|Collector-base voltage|_V_CBO<br>es<br>ee|15<br>es<br>eee||
|Emitter-base voltage|_V_EBO<br>ee|1.5<br>eee||
|Collector current|_I_C<br>ee <br>es|25<br> eee<br>es|mA|
|Base current|_I_B<br>es|3<br>es||
|Total power dissipation1)<br>_T_S ≤110 °C|_P_tot<br>||75<br>||mW|
|Junction temperature|_T_J<br>es<br>ee|150<br>es<br>eee|°C|
|Ambient temperature|_T_A<br>ee|-65 ... 150<br>eee||
|Storage temperature|_T_Stg<br>ee <br>es|-65 ... 150<br> eee<br>es||



> 1 _T_ S is measured on the emitter lead at the soldering point to the pcb 

1 

2013-09-19 

**BFP405** 

|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|||**Unit**|
|Junction - soldering point1)|_R_thJS|530|||K/W|
|**Electrical Characteristics**at_T_A= 25 °C,unless otherwise specified||||||
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage<br>_I_C= 1 mA,_I_B= 0|_V_(BR)CEO|4.5|5|-|V|
|Collector-emitter cutoff current<br>_V_CE= 15 V,_V_BE= 0|_I_CES|-|-|10|µA|
|Collector-base cutoff current<br>_V_CB= 5 V,_I_E= 0|_I_CBO|-|-|100|nA|
|Emitter-base cutoff current<br>_V_EB= 0.5 V,_I_C= 0|_I_EBO|-|-|1|µA|
|DC current gain<br>_I_C= 5 mA,_V_CE= 4 V,pulse measured|_h_FE|60|95|130|-|



> 1For the definition of _R_ thJS please refer to Application Note AN077 (Thermal Resistance Calculation) 

2 

2013-09-19 

**BFP405** 

|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**AC Characteristics**(verified by random sampling)||||||
|Transition frequency<br>_I_C= 10 mA,_V_CE= 3 V,_f_= 2 GHz|_f_T|18|25|-|GHz|
|Collector-base capacitance<br>_V_CB= 2 V,_f_= 1 MHz,_V_BE= 0 ,<br>emitter grounded|_C_cb|-|0.05|0.1|pF|
|Collector emitter capacitance<br>_V_CE= 2 V,_f_= 1 MHz,_V_BE= 0 ,<br>base grounded|_C_ce|-|0.24|-||
|Emitter-base capacitance<br>_V_EB= 0.5 V,_f_= 1 MHz,_V_CB= 0 ,<br>collector grounded|_C_eb|-|0.29|-||
|Minimum noise figure<br>_I_C= 2 mA,_V_CE= 2 V,_f_= 1.8 GHz,_Z_S=_Z_Sopt|_NF_min|-|1.25|-|dB|
|Power gain, maximum stable1)<br>_I_C= 5 mA,_V_CE= 2 V,_Z_S=_Z_Sopt,<br>_Z_L=_Z_Lopt,_f_= 1.8 GHz|_G_ms|-|23|-|dB|
|Insertion power gain<br>_V_CE= 2 V,_I_C= 5 mA,_f_= 1.8 GHz,<br>_Z_S=_Z_L= 50Ω||_S_21|2|14|18.5|-||
|Third order intercept point at output2)<br>_V_CE= 2 V,_I_C= 5 mA,_f_= 1.8 GHz,<br>_Z_S=_Z_L= 50Ω|_IP3_|-|15|-|dBm|
|1dB compression point at output<br>_I_C= 5 mA,_V_CE= 2 V,_Z_S=_Z_L= 50Ω,<br>_f_= 1.8 GHz|_P_-1dB|-|5|-||



> 1 _G_ ms = | _S_ 21 / _S_ 12| 

2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 

3 

2013-09-19 

**BFP405** 

## **Total power dissipation** _P_ tot = ƒ( _T_ S) 

**==> picture [230 x 269] intentionally omitted <==**

**----- Start of picture text -----**<br>
90<br>mW<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 30 60 90 °C 150<br>T S<br>tot<br>P<br>**----- End of picture text -----**<br>


## **Permissible Pulse Load** 

_P_ totmax/ _P_ totDC = ƒ( _t_ p) 

**==> picture [233 x 273] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 1<br>D = 0<br>0.005<br>0.01<br>- 0.02<br>0.05<br>0.1<br>0.2<br>0.5<br>10 0<br>10  [-7 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>t<br>p<br>totDC<br>/ P totmax<br>P<br>**----- End of picture text -----**<br>


## **Permissible Pulse Load** _R_ thJS = ƒ( _t_ p) 

**==> picture [233 x 273] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 3<br>K/W<br>0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>0.01<br>0.005<br>D = 0<br>10 2<br>10  [-7 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>t<br>p<br>thJS<br>R<br>**----- End of picture text -----**<br>


**Collector-base capacitance** _C_ cb = ƒ( _V_ CB) _f_ = 1MHz 

**==> picture [225 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.3<br>pF<br>0.2<br>0.15<br>0.1<br>0.05<br>0<br>0 0.5 1 1.5 2 2.5 3 V 4<br>V CB<br>CB<br>C<br>**----- End of picture text -----**<br>


2013-09-19 

4 

**BFP405** 

## **Transition frequency** _f_ T = ƒ( _I_ C) 

## _f_ = 2 GHz 

**Power gain** _G_ ma, _G_ ms, | _S_ 21|[2] = ƒ ( _f_ ) _V_ CE = 3 V, _I_ C = 5 mA 

## _V_ CE = parameter in V 

**==> picture [227 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
26<br>GHz<br>4V<br>3V<br>22<br>2V<br>20<br>1.5V<br>18<br>16<br>1V<br>14<br>12<br>10<br>8<br>0.5V<br>6<br>4<br>0 4 8 12 16 mA 22<br>I C<br>f T<br>**----- End of picture text -----**<br>


## **Power gain** _G_ ma, _G_ ms =  ƒ ( _I_ C) 

## _V_ CE = 3V 

## _f_ = parameter in GHz 

**==> picture [228 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
40<br>dB 0.15GHz<br>32  0.45GHz<br>0.9GHz<br>28<br>1.5GHz<br>24<br>1.9GHz<br>20  2.4GHz<br>16  3.5GHz<br>12<br>5.5GHz<br>8<br>10GHz<br>4<br>0<br>0 4 8 12 16 20 mA 26<br>I C<br>G<br>**----- End of picture text -----**<br>


**==> picture [228 x 264] intentionally omitted <==**

**----- Start of picture text -----**<br>
44<br>dB<br>36<br>32<br>28<br>Gms<br>24<br>20<br>16<br>|S21|² Gma<br>12<br>8<br>4<br>0<br>0 1 2 3 4 5 6 7 8 GHz 10<br>f<br>G<br>**----- End of picture text -----**<br>


**Power gain** _G_ ma, _G_ ms = ƒ ( _V_ CE) _I_ C = 5 mA 

## _f_ = parameter in GHz 

**==> picture [225 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
40<br>dB<br>0.15GHz<br>32<br>0.45GHz<br>28  0.9GHz<br>1.5GHz<br>24<br>2.4GHz<br>20<br>3.5GHz<br>16<br>5.5GHz<br>12<br>8  10GHz<br>4<br>0<br>0 1 2 3 4 V 6<br>V CE<br>G<br>**----- End of picture text -----**<br>


2013-09-19 

5 

**BFP405** 

**Noise figure** _F_ = ƒ( _I_ C) _V_ CE = 2 V, _Z_ S _= Z_ Sopt 

**==> picture [227 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
4<br>dB<br>3<br>2.5<br>2<br>1.5<br>f = 6 GHz<br>f = 5 GHz<br>1<br>f = 4 GHz<br>f = 3 GHz<br>f = 2.4 GHz<br>0.5<br>f = 1.8 GHz<br>f = 0.9 GHz<br>0<br>0 2 4 6 8 mA 12<br>I C<br>F<br>**----- End of picture text -----**<br>


**Noise figure** _F_ = ƒ( _f_ ) _V_ CE = 1 V, _Z_ S = _Z_ Sopt 

**==> picture [225 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>dB<br>2<br>1.5<br>1 IC = 5 mA<br>IC = 2 mA<br>0.5<br>0<br>0 1 2 3 4 GHz 6<br>f<br>F<br>**----- End of picture text -----**<br>


**Noise figure** _F_ = ƒ( _I_ C) _V_ CE = 2 V, _f_ = 1.8 GHz 

**==> picture [227 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
4<br>dB<br>3<br>2.5<br>2<br>1.5<br>ZS = 50 Ohm<br>1<br>ZS = ZSopt<br>0.5<br>0<br>0 2 4 6 8 mA 12<br>I C<br>F<br>**----- End of picture text -----**<br>


**Source impedance** for min. noise figure vs. frequency _V_ CE = 3 V, _I_ C = 2 mA / 5 mA 

**==> picture [194 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
+j50<br>+j25 +j100<br>+j10<br>3GHz<br>4GHz<br>1.8GHz<br>5GHz<br>0.9GHz<br>0  6GHz<br>10 25 50 100<br>2mA<br>5mA<br>-j10<br>-j25 -j100<br>-j50<br>**----- End of picture text -----**<br>


6 

2013-09-19 

**BFP405** 

## **SPICE GP Model** 

For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. 

Please consult our website and download the latest versions before actually starting your design. You find the BFP405 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 6 GHz using typical devices. The BFP405 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 

2013-09-19 

7 

**Package SOT343** 

**BFP405** 

8 

2013-09-19 

**BFP405** 

**Edition 2009-11-05 Published by Infineon Technologies AG, 85579 Neubiberg, Germany © Infineon Technologies AG 2009. All Rights Reserved.** 

## **Attention please!** 

The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. 

Terms of delivery and rights to technical change reserved. 

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding cicuits, descriptions and charts stated herein. 

## **Information** 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( **www.infineon.com** ). 

## **Warnings** 

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. 

Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

9 

2013-09-19