BFG591

Bipolar - RF Transistor, NPN, 15 V, 7 GHz, 2 W, 200 mA, SOT-223

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Manufacturer: NXP
Product type: Bipolar RF Transistors
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:7GHz; Power Dissipation Pd:2W; DC Collector Current:200mA; DC Current Gain hFE:90hFE; RF Transistor Ca
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 2W
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 7GHz
Transistor Case Style: SOT-223
DC Current Gain hFE Min: 90hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 200mA
Collector Emitter Voltage Max: 15V

Delivery and price
Units per pack	40000
Price	0.267 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 18, 2026