Illustrative purposes only
BFG35,115
Bipolar - RF Transistor, NPN, 18 V, 4 GHz, 1 W, 150 mA, SOT-223
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: NXP
- Product type: Bipolar RF Transistors
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Power Dissipation: 1W
- RF Transistor Case: SOT-223
- DC Current Gain hFE: 70hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- DC Collector Current: 150mA
- Power Dissipation Pd: 1W
- Transition Frequency: 4GHz
- Transistor Case Style: SOT-223
- DC Current Gain hFE Min: 70hFE
- Operating Temperature Max: 175°C
- Continuous Collector Current: 150mA
- Collector Emitter Voltage Max: 18V
- Collector Emitter Voltage V(br)ceo: 18V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.612 € |
| Current stock | N/A |
| Lead time | 30 days |