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BF998E6327HTSA1
RF FET Transistor, 12 V, 30 mA, 200 mW, TO-252
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: RF FETs
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-252
- Operating Frequency Max: -
- Operating Frequency Min: -
- Drain Source Voltage Vds: 12V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 30mA
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.27 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Silicon N Channel MOSFET Tetrode
BF 998
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Features po oe<br>@ Short-channel transistor<br>with high S/C quality factor |<br>@ inputFor low-noistage s e,upgain-controlledto 1 GHz erago; ';<br>|<br>Type _ ~ [Marking — ‘Ordering Code _ _ | Pin Configuration | Package” ~<br>(tape and reel) ' 4: 2 ; 3 4.<br>BF 998 {MO Q62702-F1129 Ss D Ge | G SOT-143<br>Maximum Ratings<br>Parameter $= == [Symbol] j|Values [Unit |<br>Drain-source voltage Vos 12 Vv<br>Drain current fo 30 |; MA<br>Gate 1/gate 2 peak source current + Iovese 10<br>Total power dissipation, 7s < 76 'C Prot - 200 mW<br>Storage temperature range Tstg -55...+ 150 | °C<br>Thermal Resistance<br>ne en<br>**----- End of picture text -----**<br>
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1) For detailed information see chapter Package Outlines.
Semiconductor Group
229
04.96
SIEMENS
BF 998
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||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Electrical|Characteristics|
|at|7a|=|25|C,|unless|otherwise|specified.|
|Parameter|—t™S|‘|Symbol|||Values|||Unit|:|
|| min.|ltyp.||max.|—|
|DC|Characteristics|
|Drain-source|breakdown|voltage|_|Vier; os|||12|=|_|‘Vv|
|fo|=10pA,.|Fas|=-|boas|=4V|||!|
|GateGateticis 2-source1-source= 10|MA, breakdownbreakdownees=|Fos= voltagevoltage0||le 4|VercissVier) Gass|| 88|a -|—|[12“42|||||
|tiees= 10|MA,|Weis=|Fos=0|||i|
|Gate|1-source|leakage|current|Se|isiss|—||—|“150|“nA|
|+Voisme|=re5 V,|I’e2sa|=eeHos|= 0|—|=|a|||es|.|.|ns|be|||
|Gate 2-source|leakage current|+|Ioess|-|-|| 50|||
|+|Foes|=|5|V,|bars|=|Mos=|0|i|||||
|Drain current|||loss|| 2|j-|18|mA|
|Vos|= BV,|Vois =|0,|Faas=4V|||i|
|Gate|1-source pinch-off voltage|Voisin)||-|\~|2.5|V|
|Vos = BV,|Woas|= 4 V, lo= 20uA|||||
|Gate|2-source|pinch-off|voltage|_|»|VGasip)|-|=|||2|
|Vos = 8 V,|lars =|0,|fo= 20 A|||||
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Semiconductor Group 230
|SIEMENS||BF 998|
|---|---|---|
|Electrical Characteristics|||
|at Ta = 25 'C, unless otherwise specified.|||
|Parameter”<br>-<br>Symbol/<br>ssValues.<br>siUnit|||
||<br>-<br>——<br>———~.<br>a<br>.<br>eee<br>ee|min. typ.<br>an oe<br>ee|max.<br>de ed.<br>a|
|AC Characteristics|||
|Forwardtransconductance i (ati(sststi‘<‘“ts«=<C*é‘*<br>~*~<br>Vos<br>= 8V, fn =10MA,<br>aes =4V<br>|<br>f=1kHz<br>|<br>.<br>|<br>Gate 1 inputcapacitance<br>. Catss<br>|=<br>2.1<br>Vos<br>= BV, fo = 10MA, Hoes<br>= 4V<br>f= 1MHz<br>;<br>Gate 2 input capacitance<br>—<br>| C3238. a 42 <br>Vos<br>= BV,<br>fo<br>= 10 MA, ars<br>=4V<br>:<br>|<br>'<br>{=<br>1 MHz<br>L<br>|<br>|<br>Reverse transfercapacitance<br>Cag<br>|-<br>a5<br>Mos = 8 V, lo = 10 MA, I’o2s = 4V<br>|<br>|<br>j= 1 MHz<br>|<br>Outputcapacitance<br>Cass<br>[2<br>1.05<br>Vos<br>=8V, ln= 10MA, las =4V<br>|<br>f= 1 MHz<br>Powergain<br>oT-_he<br>(test circuit 1)<br>|<br>|<br>Vos<br>= 8 V,fo=10MA, f= 200MHz,<br>|<br>|<br>Ga =2 mS, G. = 0.5 mS, Fas =4V<br>Powergan<br>ssts—<‘—s~si‘~™*sdgw<br>357<br>(test circuit2)<br>|<br>|<br>|<br>Vos = 8 V, fo = 10mA,f =800MHz,<br>|<br>Go= 3.3 mS, G.=1mMS, Ios=4V<br>i<br>Noisefigure<br>iF<br>-<br>(06<br>(test circuit 1)<br>|<br>Vos= 8V, lo = 10 mA, f=200MHz,<br>|<br>Go=2mMmS, G=0.5 mS, Vez<br>=4 V<br>|<br>Noise<br>figure<br>if<br>-<br>1<br>(test<br>circuit2)<br>|<br>Mos = 8 V, In<br>= 10mA,f=800 MHz,|||-fms<br>(25 Tee<br>|<br>|<br> _<br>|<br>|<br>j-<br>| fF<br>|<br>|<br>|-<br>pF<br>|<br>dB<br>|<br>|<br>|<br>- |<br>|=<br>1s<br>|<br>|<br>|<br>-<br>|<br>||
|Go=3.3mS,Gc=1 mS, Kees=4V<br>Control range<br>AGos<br>(test circuit2)<br>|<br>Vos<br>=BV, Vas =4...-2V<br>{= 800 MHz<br>|<br>AY|40<br>-<br>|<br>a||<br>-<br>|<br>|<br>ee—_|
Semiconductor Group 231
SIEMENS
BF 998
Total power dissipation Pitot = f (Ta)
Output characteristics /p = f (Vos) Vass=4V
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ne, AF 998 CHTOTESS<br>1 Ae |<br>tS i-fhe 4 , cr aa<br>= 47TET T ET |<br>7 A e eee<br> — ace<br>i ' a4v<br>ao ~0.6N<br>OF _ 10. OVC 45<br>—- wm Nye<br>Gate1 forward transconductance<br>gter = f (Vaas)<br>Vos = 8 V, Joss = 10 MA, f= 1 kHz<br>GF 998 EHTO7294<br>Ist | oo 920.25)<br>t- a . - a ioe<br>nn, ad<br>| SPL<br>Os 0 1 2 3 vo4<br>m Ves<br>**----- End of picture text -----**<br>
Gate 1 forward transconductance gts1 = f (Vars) Vos = 8 V, Joss = 10 mA, f= 1 kHz
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aF 998 EHTO7293<br>Ist || } \ | |<br>“4 wo fe f| \ yt A<br>|<br>oY 0 1 vo?<br>m Vers<br>Semiconductor Group 232<br>**----- End of picture text -----**<br>
BF 998
## SIEMENS
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Gate 1 forward transconductance<br>gts = f (Io)<br>Vos = 8 V, loss = 10 mA, f= 1 KHz<br>30 BF 998 EHTO7295<br>91 TTT<br>msHHT arts<br>naan eee HBT<br>HTN a<br>YE ENF<br>oA LNT NEE<br>BAWANEEREAT<br>NT<br>TTT ET es TN |<br>of LENovl TTTIN ITLL<br>0 5 10 15 mA 20<br>—w lp<br>**----- End of picture text -----**<br>
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Gate 1 input capacitance Cis: = f (Vass)<br>Vars = 4 V, Vos = 8 V, floss = 10 mA,<br>f=1MHz<br>25 er 998 ; ; , EHTO7Z9€<br>re ee<br>Gis PRIa ao<br>mol LC<br>po p toe |<br>wl DL<br>| njeecpee toy of<br>Fspb Py | a<br>oT<br>J—f$—4- fa<br>ne<br>“3 -2 -1 G Vv 4<br>cme Vers<br>Output capacitance Cuss = f (Vos)<br>Vois= OV, Vors=4V<br>loss= 10 mA, f= 1 MHz<br>3 a 998 _ £4797 298<br>aoPRG GG . |<br>| | H<br>Th ETT,<br>0 5 19 vo 15<br>m Ns<br>**----- End of picture text -----**<br>
Gate 2 input capacitance C gas = f (Vazs) Vais= OV, Vos= 8 V loss= 10 MA,f = 1MHz
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SIEMENS
BF 998
## eee
Drain current Jo = f (Vais) Vos=8V
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Power gain Gps = f (Vazs)<br>Vos = 8 V, Vers = 0, foss = 10 mA,<br>f= 200 MHz (see test circuit 1)<br>30 3F 998 EHTG7 300<br>i |<br>10 f= papper pep be<br>ii ||| : | , |<br>-30 . | Lot |<br>oe ee<br>te Voxg<br>**----- End of picture text -----**<br>
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Noise figure F = f (Vazs)<br>Vos = 8 V, Vais = 0, /oss = 10 MA,<br>f= 200 MHz (see test circuit 1)<br>a _AHIC?SC1<br>en re |<br>r 1. en<br>99 { 2 3 vo4<br>& boas<br>Semiconductor Group<br>**----- End of picture text -----**<br>
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Power gain Gps =f (Vazs)<br>Vos = 8 V, Vais=0, /oss = 10 MA,<br>f= 800 MHz (see test circuit 2)<br>39 FE 9B open ETE<br>oe | | | |<br>4 20} ob jl i :<br>401 0 1 2 3 Vv 4<br>m Vers<br>**----- End of picture text -----**<br>
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234<br>**----- End of picture text -----**<br>
SIEMENS
BF 998
Noise figure F = f (Vazs) Vos= BV, Vais= 0, Joss= 10 mA, f= 800 MHz (see test circuit 2)
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BF 998 EHTO7 393<br>4) | | | po |<br>oof ee bee.<br>: en cs ee ee<br>[~ . j i<br>2 en ee ene| | Od ee |<br>| ' i ; { |<br>| | | |<br>i<br>! | | '<br>0:rn | | | ]|<br>0 1 2 3. Vv 4<br>conte Veas<br>Gate 1 forward transfer admittance y y<br>Vos =8V, Vazs=4V, Vais=0<br>foss = 10 MA (common-source)<br>0 a a , | ae ee<br>by = MS Ty | a YOOMH<br>{ | | | | 200mtx | :<br>| iL. | | ; i va |<br>“10; | i | | I ri1 400MH2 | | ||<br>3 | pata ;<br>L_ r bodMHE {| i<br>] row rp]<br>-15h-} c soo +<br>F Seo. aon<br>20 | :| tools| jooawee of Lj| | | ' | | :<br>os_ |<br>10 Fit 15 tid 20tdimS 25<br>FIN,<br>Semiconductor Group<br>**----- End of picture text -----**<br>
Gate 1 forward transfer admittance y y 21s Vos =8V, Vazs=4V, Vais=0 foss = 10 MA (common-source)
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Gate 1 input admittance yi.<br>Vos= 8 V, Vazs=4 V, Vais= 0,<br>loss = 10 mA (common-source)<br>BF 998 ee ee ETC? 304<br>| : ora |<br>10: . 1<br>BD0Wr2<br>8 TOOMHT | : |<br>| | | i |<br>5. 600 Ma | ; |<br>| ow } | |<br>4) 400WHr | |<br>power<br>2 | “ee , | |<br>gt100 oawaz |ae oTa al.rr<br>0 | 2 3 mS 4<br>wo,<br>Output admittance y 22<br>Vos= 8 V, Veas=4V, Vais=0<br>loss = 10 MA (common-source)<br>8 BF 998 , | , | _—<br>625 mS | | | f=1200442 |<br>ry<br>Bl | tooomH: |<br>| | ee if:Hou| .<br>} oy | B90 M2 |<br>| | | |<br>4 TY] Tope | -<br>pee | |<br>j “00M TT<br>2 ifaa i‘aoa| | |<br>OG Mia hp<br>acum0 0.1 0.2 0.3| 0.4 mS 0.5|<br>r Do,<br>235<br>**----- End of picture text -----**<br>
SIEMENS
BF 998
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Test circuit 1 for power gain and noise figure<br>f= 200 MHz,Go=2mS,Ge=05MS<br>Yar<br>we)<br>[]270<br>Inf<br>™<br>1 _ i Outpul<br>Inf + =Sispe | ' =isorll IC eon<br>cooit Bei i |<br>if _j88515 88515 |<br>int AY []e70 . [e707 7<br>I) I| |} |}<br>a rN ry rN<br>Kors Yun Yan Ys<br>EHMOTC20<br>Test circuit 2 for power gain and noise figure<br>[= 800 MHz, Go = 3.3 mS, G.=1mS<br>Voas<br>Vv<br>InF []270% “nF<br>output<br>we<br>OE _— Iso<br>Pe ee<br>f aanp.6pF los.)- tine 0.5...3pF Par<br>I) tH<br>a CN<br>Yous Vos<br>EHMO7023<br>**----- End of picture text -----**<br>
Semiconductor Group
236
Updated at April 24, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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