Illustrative purposes only
BF998E6327HTSA1
RF FET Transistor, 12 V, 30 mA, 200 mW, TO-252
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: INFINEON
- Product type: RF FETs
- Product variants: No other variants available. No other names.
- No. of Pins: 4Pins
- Channel Type: N Channel
- Power Dissipation: 200mW
- RF Transistor Case: SOT-143
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 200mW
- Transistor Case Style: TO-252
- Drain Source Voltage Vds: 12V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 30mA
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.232 € |
| Current stock | 19753 |
| Lead time | 7 days |
