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BF998E6327HTSA1
RF FET Transistor, 12 V, 30 mA, 200 mW, TO-252
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: INFINEON
- Product type: RF FETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:30mA; Drain Source Voltage Vds:12V; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation
- MSL: -
- SVHC: No SVHC (23-Jan-2024)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-252
- Operating Frequency Max: -
- Operating Frequency Min: -
- Drain Source Voltage Vds: 12V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 30mA
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.312 € |
| Current stock | 19753 |
| Lead time | 7 days |
Datasheet
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Updated at March 3, 2026