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BF771E6327HTSA1

Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 580 mW, 80 mA, SOT-23

  • Manufacturer: INFINEON
  • Product type: Bipolar RF Transistors
  • Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:580mW; DC Collector Current:80mA; DC Current Gain hFE:70hFE; RF T
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (25-Jun-2025)
  • No. of Pins: 3Pins
  • Product Range: -
  • Qualification: AEC-Q101
  • Power Dissipation: 580mW
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: NPN
  • Transition Frequency: 8GHz
  • Transistor Case Style: SOT-23
  • DC Current Gain hFE Min: 70hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 80mA
  • Collector Emitter Voltage Max: 12V
Delivery and price
Units per pack 5000
Price 0.08 €
Current stock 13480
Lead time 7 days
PDF File icon Datasheet

Updated at March 3, 2026