BF720T1G

## BF720T1G, SBF720T1G, BF720T3G 

## NPN Silicon Transistor 

## **Features** 

## **http://onsemi.com** 

- AEC−Q101 Qualified and PPAP Capable 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 

## **NPN SILICON TRANSISTOR SURFACE MOUNT** 

**MAXIMUM RATINGS** 

**SOT−223 (TO−261) Rating Symbol Value Unit CASE 318E** Collector−Emitter Voltage VCEO 300 Vdc **STYLE 1** Collector−Base Voltage VCBO 300 Vdc COLLECTOR 2, 4 Collector−Emitter Voltage VCER 300 Vdc Emitter−Base Voltage VEBO 5.0 Vdc BASE Collector Current IC 100 mAdc 1 Total Power Dissipation up to TA = 25C PD 1.5 W Storage Temperature Range Tstg −65 to +150 C EMITTER 3 Junction Temperature TJ 150 C ~~=~~ **MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** Thermal Resistance, C/W AYWDC Junction−to−Ambient (Note 1) R JA 83.3 Stresses exceeding Maximum Ratings may damage the device. Maximum 1 Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the A = Assembly Location Recommended Operating Conditions may affect device reliability. Y = Year Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x W = Work Week 0.059 in.; mounting pad for the collector lead min. 0.93 in[[2]] . DC = Device Code = Pb−Free Package 

## **THERMAL CHARACTERISTICS** 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in[[2]] . 

(Note: Microdot may be in either location) 

**ORDERING INFORMATION** 

**Device Package Shipping**[†] BF720T1G SOT−223 1,000 / Tape & Reel (Pb−Free) SBF720T1G SOT−223 1,000 / Tape & Reel (Pb−Free) BF720T3G SOT−223 4,000 / Tape & Reel (Pb−Free) ~~===~~ †For information on tape and reel specifications, 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

 Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. 8** 

**BF720T1/D** 

## **BF720T1G, SBF720T1G, BF720T3G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristics**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector-Emitter Breakdown Voltage<br>(IC= 1.0 mAdc, IB= 0)|V(BR)CEO|300|−|Vdc|
|Collector-Base Breakdown Voltage<br>(IC= 100�Adc, IE= 0)|V(BR)CBO|300|−|Vdc|
|Collector-Emitter Breakdown Voltage<br>(IC= 100�Adc, RBE= 2.7 k�)|V(BR)CER|300|−|Vdc|
|Emitter-Base Breakdown Voltage<br>(IE= 10�Adc, IC= 0)|V(BR)EBO|5.0|−|Vdc|
|Collector-Base Cutoff Current<br>(VCB= 200 Vdc, IE= 0)|ICBO|−|10|nAdc|
|Collector−Emitter Cutoff Current<br>(VCE= 250 Vdc, RBE= 2.7 k�)<br>(VCE= 200 Vdc, RBE= 2.7 k�, TJ= 150C)|ICER|−<br>−|50<br>10|nAdc<br>�Adc|
|**ON CHARACTERISTICS**|||||
|DC Current Gain<br>(IC= 25 mAdc, VCE= 20 Vdc)|hFE|50|−|−|
|Collector-Emitter Saturation Voltage<br>(IC= 30 mAdc, IB= 5.0 mAdc)|VCE(sat)|−|0.6|Vdc|
|**DYNAMIC CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mAdc, VCE= 10 Vdc, f = 35 MHz)|fT|60|−|MHz|
|Feedback Capacitance<br>(VCE= 30 Vdc, IC= 0, f = 1.0 MHz)|Cre|−|1.6|pF|



**http://onsemi.com** 

**2** 

**BF720T1G, SBF720T1G, BF720T3G** 

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**----- Start of picture text -----**<br>
120<br>VCE = 10 Vdc<br>100 TJ = +125  C<br>80<br>25  C<br>60<br>40<br>-55  C<br>20<br>0<br>0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 1. DC Current Gain** 

**==> picture [485 x 384] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 80<br>C eb  @ 1MHz 70<br>60<br>10<br>50<br>40<br>1.0 Ccb @ 1MHz 30 TJ = 25  C<br>VCE = 20 V<br>20 f = 20 MHz<br>0.1 10<br>0.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>Figure 2. Capacitance Figure 3. Current−Gain − Bandwidth<br>1.4<br>1.2 VCE(sat) @ 25  C, IC/IB = 10<br>1.0 VVCE(sat)CE(sat) @ 125 @ -55  C, IC, ICC/I/IBB = 10 = 10<br>0.8 VBE(sat) @ 25  C, IC/IB = 10<br>VBE(sat) @ 125  C, IC/IB = 10<br>0.6 VBE(sat) @ -55  C, IC/IB = 10<br>VBE(on) @ 25  C, VCE = 10 V<br>0.4 VBE(on) @ 125  C, VCE = 10 V<br>0.2 VBE(on) @ -55  C, VCE = 10 V<br>0.0<br>0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA)<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN — BANDWIDTH (MHz)T<br>V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 4. “ON” Voltages** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SOT−223 (TO−261)** CASE 318E−04 ISSUE R 

**SCALE 1:1** 

## DATE 02 OCT 2018 

**DOCUMENT NUMBER: 98ASB42680B** 

**DESCRIPTION: SOT−223 (TO−261)** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 2** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2018 

DATE 02 OCT 2018 

## **SOT−223 (TO−261)** CASE 318E−04 ISSUE R 

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. BASE PIN 1. ANODE PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN 2. COLLECTOR 2. CATHODE 2. DRAIN 2. DRAIN 2. GATE 3. EMITTER 3. NC 3. SOURCE 3. GATE 3. SOURCE 4. COLLECTOR 4. CATHODE 4. DRAIN 4. DRAIN 4. GATE STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: PIN 1. RETURN PIN 1. ANODE 1 CANCELLED PIN 1. INPUT PIN 1. CATHODE 2. INPUT 2. CATHODE 2. GROUND 2. ANODE 3. OUTPUT 3. ANODE 2 3. LOGIC 3. GATE 4. INPUT 4. CATHODE 4. GROUND 4. ANODE STYLE 11: STYLE 12: STYLE 13: PIN 1. MT 1 PIN 1. INPUT PIN 1. GATE 2. MT 2 2. OUTPUT 2. COLLECTOR 3. GATE 3. NC 3. EMITTER 4. MT 2 4. OUTPUT 4. COLLECTOR **GENERIC MARKING DIAGRAM*** AYW XXXXX 1 ~~|~~ A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42680B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−223 (TO−261) PAGE 2 OF 2** ~~—ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2018 

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