BF423ZL1G
Bipolar (BJT) Single Transistor, PNP, 250 V, 100 mA, 830 mW, TO-92, Through Hole
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-250V; Transition Frequency ft:60MHz; Power Dissipation Pd:830mW; DC Collector Current:100mA; DC Current Gain hFE:50hFE; Transistor Case
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 830mW
- Transistor Mounting: Through Hole
- Transistor Polarity: PNP
- Transition Frequency: 60MHz
- Transistor Case Style: TO-92
- DC Current Gain hFE Min: 50hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 250V
| Delivery and price | |
|---|---|
| Units per pack | 15000 |
| Price | 0.034 € |
| Current stock | 10+ |
| Lead time | 30 days |
BF421, BF423 **==> picture [171 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> http://onsemi.com<br>TO−92<br>CASE 29<br>STYLE 14<br>1<br>1 23 tt [@] 2 3<br>STRAIGHT LEAD BENT LEAD<br>BULK PACK TAPE & REEL<br>AMMO PACK<br>**----- End of picture text -----**<br> ## High Voltage Transistors **PNP Silicon** ## **Features** - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **MAXIMUM RATINGS** |**Rating**<br>Collector−Emitter Voltage<br>Collector−Base Voltage<br>Emitter−Base Voltage|**Symbol**<br>VCEO<br>VCBO<br>VEBO|**BF421**<br>**BF423**<br>−300<br>−250<br>−300<br>−250<br>−5.0|**Unit**<br>Vdc<br>Vdc<br>Vdc|1 23<br>tt|[@]<br>tt|[@]<br>tt|**TO−92**<br>**CASE 29**<br>**STYLE 14**<br>1 2<br>3[@]<br>tt|**TO−92**<br>**CASE 29**<br>**STYLE 14**<br>1 2<br>3[@]<br>tt| |---|---|---|---|---|---|---|---|---| |Collector Current − Continuous|IC|−500|mAdc|STRAIGHT LEAD<br>BULK PACK|||BENT LEAD<br>TAPE & REEL|| |Collector Current − Peak|ICM|100|mA||||AMMO PACK|| |Total Device Dissipation (Note 1)|PD||mW|||||| |@ TA= 25°C||830|mW/°C||COLLECTOR||**MARKING**|| |Derate above 25°C<br>6.6<br>Operating and Storage Junction<br>Temperature Range<br>TJ, Tstg<br>−55 to +150<br>**THERMAL CHARACTERISTICS**<br>**Characteristic**<br>**Symbol**<br>**Max**|||°C<br>**Unit**|3<br>BASE|2<br>1<br>~~:~~||**DIAGRAM**<br>BF<br>42x<br>AYWW|| |Thermal Resistance,|R|JA|°C/W||EMITTER|||| |Junction−to−Ambient||150||||||| |Thermal Resistance,|R|JL|°C/W||BF42x||= Device Code|| |Junction−to−Lead||68|||||x = 1 or 3|| |Stresses exceeding Maximum Ratings may damage the device. Maximum<br>Ratings are stress ratings only. Functional operation above the Recommended<br>Operating Conditions is not implied. Extended exposure to stresses above the<br>Recommended Operating Conditions may affect device reliability.|||||A<br>Y<br>WW||= Assembly Location<br>= Year<br>= Work Week<br>= Pb−Free Package|| ## **THERMAL CHARACTERISTICS** Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on a FR4 board with 200 mm[2] of 1 oz copper and lead length of 5 mm. (Note: Microdot may be in either location) **ORDERING INFORMATION** **Device Package Shipping** BF421ZL1G TO−92 2000/Ammo Pack (Pb−Free) BF423G TO−92 5000 Units/Box (Pb−Free) BF423ZL1G TO−92 2000/Ammo Pack (Pb−Free) ~~==~~ > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2010 **July, 2010 − Rev. 5** **BF421/D** **BF421, BF423** ## **ELECTRICAL CHARACTERISTICS** (TA = 25°C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Breakdown Voltage (Note 1)<br>(IC= −1.0 mAdc, IB= 0)<br>BF421<br>BF423|V(BR)CEO|−300<br>−250|−<br>−|Vdc| |Collector−Base Breakdown Voltage<br>(IC= −100�Adc, IE= 0)<br>BF421<br>BF423|V(BR)CBO|−300<br>−250|−<br>−|Vdc| |Emitter−Base Breakdown Voltage<br>(IE= −100�Adc, IC= 0)<br>BF421<br>BF423|V(BR)EBO|−5.0<br>−5.0|−<br>−|Vdc| |Collector Cutoff Current<br>(VCB= −200 Vdc, IE= 0)<br>BF421<br>BF423|ICBO|−<br>−|−0.01<br>−|�Adc| |Emitter Cutoff Current<br>(VEB= −5.0 Vdc, IC= 0)<br>BF421<br>BF423|IEBO|−<br>−|−100<br>−|nAdc| |**ON CHARACTERISTICS**||||| |DC Current Gain<br>(IC= −25 mA, VCE= −20 Vdc)<br>BF421<br>BF423|hFE|50<br>50|−<br>−|−| |Collector−Emitter Saturation Voltage<br>(IC= −20 mAdc, IB= −2.0 mAdc)|VCE(sat)|−|−0.5|Vdc| |Base−Emitter Saturation Voltage<br>(IC= −20 mA, IB= −2.0 mA)|VBE(sat)|−|−2.0|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**||||| |Current−Gain − Bandwidth Product<br>(IC= −10 mAdc, VCE= −10 Vdc, f = 20 MHz)|fT|60|−|MHz| |Common Emitter Feedback Capacitance<br>(VCB= −30 Vdc, IE= 0, f = 1.0 MHz)|Cre|−|2.8|pF| 1. Pulse Test: Pulse Width � 300 � s; Duty Cycle � 2.0%. **==> picture [483 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>TJ = +125 ° C VCE = 10 Vdc<br>250<br>200<br>25 ° C<br>150<br>-55 ° C<br>100<br>50<br>0<br>0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br> **Figure 1. DC Current Gain** **http://onsemi.com** **2** **BF421, BF423** **==> picture [483 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> 100 150<br>Cib @ 1MHz<br>130<br>110<br>10<br>Ccb @ 1MHz 90<br>70<br>1.0<br>50 TJ = 25 ° C<br>VCE = 20 Vdc<br>30 F = 20 MHz<br>0.1 10<br>0.1 1.0 10 100 1000 1 3 5 7 9 11 13 15 17 19 21<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>Figure 2. Capacitance Figure 3. Current−Gain − Bandwidth<br>1.4<br>1.2 VCE(sat) @ 25 ° C, IC/IB = 10<br>VCE(sat) @ 125 ° C, IC/IB = 10<br>1.0 VCE(sat) @ -55 ° C, IC/IB = 10<br>0.8 VBE(sat) @ 25 ° C, IC/IB = 10<br>VBE(sat) @ 125 ° C, IC/IB = 10<br>0.6 VBE(sat) @ -55 ° C, IC/IB = 10<br>VBE(on) @ 25 ° C, VCE = 10 V<br>0.4 VBE(on) @ 125 ° C, VCE = 10 V<br>VBE(on) @ -55 ° C, VCE = 10 V<br>0.2<br>0.0<br>0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA)<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN — BANDWIDTH (MHz)T<br>V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 4. ”ON” Voltages** **==> picture [246 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>10 ms<br>0.1<br>1.0 s<br>0.01<br>0.001<br>1 10 100 1000<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br> **Figure 5. Safe Operating Area** **http://onsemi.com** **3** **BF421, BF423** ## **PACKAGE DIMENSIONS** **TO−92 (TO−226)** CASE 029−11 ISSUE AM NOTES: **==> picture [377 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI<br>BULK PACK Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R<br>SEE IS UNCONTROLLED.<br>4. LEAD DIMENSION IS UNCONTROLLED IN P AND<br>P BEYOND DIMENSION K MINIMUM.<br>L<br>SEATING INCHES MILLIMETERS<br>PLANE K DIM MIN MAX MIN MAX<br>Vi A 0.175 0.205 4.45 5.20<br>B 0.170 0.210 4.32 5.33<br>C 0.125 0.165 3.18 4.19<br>D 0.016 0.021 0.407 0.533<br>X = X D aEEE G 0.045 0.055 1.15 1.39<br>G H 0.095 0.105 2.42 2.66<br>J 0.015 0.020 0.39 0.50<br>ye H J ——— K 0.500 --- 12.70 ---<br>L 0.250 --- 6.35 ---<br>V C N 0.080 0.105 2.04 2.66<br>P --- 0.100 --- 2.54<br>SECTION X−X R 0.115 --- 2.93 ---<br>1 N V 0.135 --- 3.43 ---<br>N STYLE 14:<br>ome 2 PIN 1. EMITTER<br>2. COLLECTOR<br>3. BASE<br>**----- End of picture text -----**<br> NOTES: **==> picture [363 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> R A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER<br>TAPE & REEL ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>AMMO PACK 3. CONTOUR OF PACKAGE BEYOND<br>DIMENSION R IS UNCONTROLLED.<br>4. LEAD DIMENSION IS UNCONTROLLED IN P<br>P AND BEYOND DIMENSION K MINIMUM.<br>T<br>MILLIMETERS<br>SEATING<br>PLANE K DIM MIN MAX<br>Bi A 4.45 5.20<br>B 4.32 5.33<br>C 3.18 4.19<br>D 0.40 0.54<br>X X D G 2.40 2.80<br>G KJ 12.700.39 0.50---<br>J N 2.04 2.66<br>a id V C = RP 1.502.93 4.00---<br>He| i 4 = V 3.43 ---<br>SECTION X−X<br>1 N<br>on<br>**----- End of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 4. LEAD DIMENSION IS UNCONTROLLED IN P **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5773−3850 Sales Representative **http://onsemi.com** **BF421/D** **4**
Updated at March 22, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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