BF2040E6814HTSA1
RF FET Transistor, 8 V, 40 mA, 200 mW, SOT-143
- Manufacturer: INFINEON
- Product type: RF FETs
- Drain Source Voltage Vds:8V; Continuous Drain Current Id:40mA; Power Dissipation Pd:200mW; Operating Frequency Min:-; Operating Frequency Max:-; RF Transistor Case:SOT-143; No. of P
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: BF2040
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Transistor Case Style: SOT-143
- Operating Frequency Max: -
- Operating Frequency Min: -
- Drain Source Voltage Vds: 8V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 40mA
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.081 € |
| Current stock | 10+ |
| Lead time | 30 days |
**BF2040...** ## **Silicon N-Channel MOSFET Tetrode** - For low noise , high gain controlled - input stages up to 1GHz - Operating voltage 5 V - Pb-free (RoHS compliant) package - Qualified according AEC Q101 ## **ESD** ( **E** lectro **s** tatic **d** ischarge) sensitive device, observe handling precaution! |**Type**|**Package**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Marking**| |---|---|---|---|---|---|---|---|---| |BF2040<br>BF2040R<br>BF2040W|SOT143<br>SOT143R<br>SOT343|1=S<br>1=D<br>1=D|2=D<br>2=S<br>2=S|3=G2<br>3=G1<br>3=G1|4=G1<br>4=G2<br>4=G2|-<br>-<br>-|-<br>-<br>-|NFs<br>NFs<br>NFs| |**Maximum Ratings**|||| |---|---|---|---| |**Parameter**|**Symbol**<br>~~|~~|**Value**<br>~~|~~|**Unit**| |Drain-source voltage|_V_DS<br>~~a~~|8<br>~~a~~|V| |Continuous drain current|_I_D<br>~~|~~|40<br>~~|~~|mA| |Gate 1/gate 2-source current|±_I_G1/2SM<br>~~|~~|10<br>~~|~~|| |Gate 1(external biasing)|+_V_G1SE|7|V| |Total power dissipation<br>_T_S ≤76 °C, BF2040, BF2040R<br>_T_S ≤94 °C, BF2040W|_P_tot<br>~~P~~|200<br>200<br>~~P~~f|mW| |Storage temperature|_T_stg<br>~~|~~|-55 ... 150<br>~~|~~|°C| |Channel temperature|stg<br>_T_ch<br>~~|~~|150<br>~~|~~|| ## **Thermal Resistance** |**Thermal Resistance**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Channel - soldering point1)<br>BF2040, BF2040R<br>BF2040W|_R_thchs|≤370<br>≤280|K/W| > 1For calculation of _R_ thJA please refer to Application Note Thermal Resistance 2007-06-01 1 **BF2040...** ## **Electrical Characteristics** at _T_ A = 25°C, unless otherwise specified |**Electrical Characteristics**at_T_A= 25°C,unles|s otherwise s|pecified|pecified|pecified|| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**| |||**min.**|**typ.**|**max.**|| |**DC Characteristics**|||||| |Drain-source breakdown voltage<br>_I_D= 20 µA,_V_G1S= 0 ,_V_G2S= 0|_V_(BR)DS|10|-|-|V| |Gate1-source breakdown voltage<br>+_I_G1S= 10 mA,_V_G2S= 0 ,_V_DS= 0|+_V_(BR)G1SS|6|-|15|| |Gate2-source breakdown voltage<br>+_I_G2S= 10 mA,_V_G1S= 0 ,_V_DS= 0|+_V_(BR)G2SS|6|-|15|| |Gate1-source leakage current<br>_V_G1S= 5 V,_V_G2S= 0 ,_V_DS= 0|+_I_G1SS|-|-|50|nA| |Gate2-source leakage current<br>_V_G2S= 5 V,_V_G1S= 0 ,_V_DS= 0|+_I_G2SS|-|-|50|| |Drain current<br>_V_DS= 5 V,_V_G1S= 0 ,_V_G2S= 4 V|_I_DSS|-|-|50|µA| |Drain-source current<br>_V_DS= 5 V,_V_G2S= 4 V,_R_G1= 100 kΩ|_I_DSX|-|15|-|mA| |Gate1-source pinch-off voltage<br>_V_DS= 5 V,_V_G2S= 4 V,_I_D= 20µA|_V_G1S(p)|0.3|0.6|-|V| |Gate2-source pinch-off voltage<br>_V_DS= 5 V,_I_D= 20 µA|_V_G2S(p)|0.3|0.7|-|| 2007-06-01 2 **BF2040...** ## **Electrical Characteristics** at _T_ A = 25°C, unless otherwise specified |**Electrical Characteristics**at_T_A= 25°C,unless o|therwise s|pecified|pecified|pecified|| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**| |||**min.**|**typ.**|**max.**|| |**AC Characteristics**-(verified byrandom sampling)|||||| |Forward transconductance<br>_V_DS= 5 V,_I_D= 15 mA,_V_G2S= 4 V|_g_fs|37|42|-|mS| |Gate1 input capacitance<br>_V_DS= 5 V,_I_D= 15 mA,_V_G2S= 4 V,<br>_f_= 10 MHz|_C_g1ss|-|2.9|3.4|pF| |Output capacitance<br>_V_DS= 5 V,_I_D= 15 mA,_V_G2S= 4 V,<br>_f_= 10 MHz|_C_dss|-|1.6|-|| |Power gain<br>_V_DS= 5 V,_I_D= 15 mA,_V_G2S= 4 V,<br>_f_= 800 MHz|_G_p|20|23|-|dB| |Noise figure<br>_V_DS= 5 V,_I_D= 15 mA,_V_G2S= 4 V,<br>_f_= 800 MHz|_F_|-|1.6|2.2|dB| |Gain control range<br>_V_DS= 5 V, _V_G2S= 4 ...0 V, _f_= 800 GHz|∆_G_p|45|50|-|| 2007-06-01 3 **BF2040...** **Total power dissipation** _P_ tot = ƒ ( _T_ S) BF2040, BFD2040R **Total power dissipation** _P_ tot = ƒ ( _T_ S) BF2040W **==> picture [230 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 220<br>mW<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 15 30 45 60 75 90 105 120 °C 150<br>T S<br>tot<br>P<br>**----- End of picture text -----**<br> **Drain current** _I_ D = ƒ ( _I_ G1) _V_ = 4V G2S **==> picture [230 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 220<br>mA<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 15 30 45 60 75 90 105 120 °C 150<br>T S<br>tot<br>P<br>**----- End of picture text -----**<br> **Output characteristics** _I_ D = ƒ ( _V_ DS) _V_ = 4 V G2S _V_ G1S = Parameter **==> picture [483 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 28 26<br>mA mA<br>24 22<br>1.4V<br>22 20<br>20<br>18<br>1.3V<br>18<br>16<br>16<br>14<br>14 1.2V<br>12<br>12<br>10<br>10 1.1V<br>8<br>8<br>6 1V<br>6<br>4 4<br>2 2<br>0 0<br>0 10 20 30 40 50 60 70 µA 90 0 1 2 3 4 5 6 7 8 V 10<br>I G1 V DS<br>I D I D<br>**----- End of picture text -----**<br> 2007-06-01 4 **BF2040...** **Gate 1 current** _I_ G1 = ƒ ( _V_ G1S) ## _V_ DS = 5V ## _V_ G2S = Parameter **==> picture [228 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 195<br>µA<br>4V<br>165<br>150<br>3.5V<br>135<br>120<br>105<br>3V<br>90<br>75<br>2.5V<br>60<br>45<br>2V<br>30<br>15<br>0<br>0 0.4 0.8 1.2 1.6 2 2.4 V 3.2<br>V G1S<br>I G1<br>**----- End of picture text -----**<br> ## **Drain current** _I_ D = ƒ ( _V_ G1S) _V_ DS = 5V _V_ G2S = Parameter **==> picture [227 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 28<br>mA<br>4V<br>24 3V<br>22<br>20<br>18<br>16<br>2V<br>14<br>12<br>10<br>8<br>1.5V<br>6<br>4<br>2<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 2<br>V G1S<br>I D<br>**----- End of picture text -----**<br> ## **Gate 1 forward transconductance** _g_ fs = ƒ ( _I_ D) _V_ DS = 5V, _V_ G2S = Parameter **==> picture [228 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>mS<br>4V<br>35<br>3.5V<br>30<br>3V<br>25<br>2.5V<br>20<br>2V<br>15<br>10<br>5<br>0<br>0 4 8 12 16 20 24 28 32 mA 40<br>I D<br>fs<br>g<br>**----- End of picture text -----**<br> ## **Drain current** _I_ D = ƒ ( _V_ GG) _V_ DS = 5V, _V_ G2S = 4V, _R_ G1 = 80k Ω (connected to _V_ GG, _V_ GG=gate1 supply voltage) **==> picture [225 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>mA<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 1 2 3 V 5<br>V GG<br>I D<br>**----- End of picture text -----**<br> 2007-06-01 5 **BF2040...** ## **Drain current** _I_ D = ƒ ( _V_ GG) ## _V_ = 4V G2S ## **Crossmodulation** _V_ unw = ( _AGC_ ) _V_ DS = 5 V _R_ G1 = Parameter in k Ω **==> picture [237 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 28<br>mA<br>70<br>24<br>80<br>22<br>90<br>20<br>18<br>110<br>16<br>130<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 1 2 3 4 5 6 V 8<br>V GG= V DS<br>I D<br>**----- End of picture text -----**<br> **==> picture [228 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>dBµV<br>110<br>105<br>100<br>95<br>90<br>85<br>80<br>0 5 10 15 20 25 30 35 40 dB 50<br>AGC<br>unw<br>V<br>**----- End of picture text -----**<br> 2007-06-01 6 **BF2040...** ## **Cossmodulation test circuit** **==> picture [263 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> VAGC VDS<br>4n7<br>R1<br>10k Ω 2.2 uH<br>4n7<br>4n7<br>RL<br>50 Ω<br>4n7<br>RGEN<br>50 Ω 50 Ω RG1<br>VGG<br>**----- End of picture text -----**<br> **==> picture [38 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Semibiased<br>**----- End of picture text -----**<br> 2007-06-01 7 **Package SOT143** **BF2040...** **==> picture [494 x 693] intentionally omitted <==** **----- Start of picture text -----**<br> Package Outline<br>2.9 ±0.1 1±0.1<br>B<br>1.9 0.1 MAX.<br>4 3<br>1 2<br>0.2 A<br>+0.1<br>0.8 -0.05<br>+0.1<br>0.4 -0.05<br>0.25 M B 0.2 M A<br>1.7<br>Foot Print<br>0.8 1.2 0.8<br>1.2 0.8<br>0.8<br>Marking Layout (Example)<br>Manufacturer<br>2005, June<br>RF s<br>Date code (YM)<br>Pin 1 BFP181<br>Type code<br>Standard Packing<br>Reel ø180 mm = 3.000 Pieces/Reel<br>Reel ø330 mm = 10.000 Pieces/Reel<br>4 0.2<br>Pin 1 3.15 1.15<br>0...8˚<br>0.08...0.15<br>0.15 MIN.<br> ±0.15 ±0.1<br>2.4 1.3<br>10˚ MAX. 10˚ MAX.<br>0.9<br>1.1<br>0.9<br>5 6<br>8<br>2.6<br>**----- End of picture text -----**<br> 2007-06-01 8 **Package SOT143R** **BF2040...** **==> picture [495 x 693] intentionally omitted <==** **----- Start of picture text -----**<br> Package Outline<br>2.9 [±0.1] 1±0.1<br>B<br>1.9 0.1 MAX.<br>4 3<br>1 2<br>0.2 A<br>0.8 +0.1-0.05<br>0.4 -0.05+0.1<br>1.7 0.2 M A<br>0.25 M B<br>Foot Print<br>0.8 1.2 0.8<br>0.8 0.8 1.2<br>Marking Layout (Example)<br>Reverse bar<br>2005, June<br>Date code (YM)<br>Pin 1<br>Manufacturer<br>BFP181R<br>Type code<br>Standard Packing<br>Reel ø180 mm = 3.000 Pieces/Reel<br>Reel ø330 mm = 10.000 Pieces/Reel<br>4 0.2<br>Pin 1 3.15 1.15<br>0˚... 8˚<br>0.08...0.15<br>0.15 MIN.<br> ±0.15 ±0.1<br>2.4 MAX. MAX. 1.3<br>10˚ 10˚<br>0.9<br>1.1<br>0.9<br>8<br>2.6<br>**----- End of picture text -----**<br> 2007-06-01 9 **Package SOT343** **BF2040...** ## Package Outline **==> picture [216 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> 0.9 ±0.1<br>2 [±0.2]<br>0.1 MAX.<br>1.3<br>0.1<br>A<br>4 3<br>0.15<br>1 2<br>0.3 [+0.1] -0.05 0.15 [+0.1] -0.05<br>4x 0.6 +0.1-0.05<br>0.1 M 0.2 M A<br>±0.1 ±0.1<br>2.1 0.1 MIN. 1.25<br>**----- End of picture text -----**<br> Foot Print **==> picture [201 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> 0.6<br>1.15<br>0.9<br>Manufacturer<br>2005, June<br>Date code (YM)<br>BGA420<br>Pin 1 Type code<br>4 0.2<br>Pin 1 2.15 1.1<br>0.8<br>1.6<br>8<br>2.3<br>**----- End of picture text -----**<br> ## Marking Layout (Example) ## Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 2007-06-01 10 **BF2040...** Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. ## **Attention please!** The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( **www.infineon.com** ). ## **Warnings** Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-06-01 11
Updated at April 24, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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