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BDX34BG
Bipolar (BJT) Single Transistor, PNP, 80 V, 10 A, 70 W, TO-220, Through Hole
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 70W
- DC Current Gain hFE: 750hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: PNP
- Transistor Case Style: TO-220
- DC Current Gain hFE Min: 750hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 10A
- Collector Emitter Voltage Max: 80V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.25 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) ## Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. ## **Features** - High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 - Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C - Low Collector−Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc **www.onsemi.com** ## **DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 65 WATTS** - BDX33B, 33C/34B, 34C - Monolithic Construction with Build−In Base−Emitter Shunt Resistors - These Devices are Pb−Free and are RoHS Compliant* **MAXIMUM RATINGS Rating Symbol Value Unit** Collector−Emitter Voltage VCEO Vdc BDX33B, BDX34B 80 1 BDX33C, BDX34C 100 2 3 Collector−Base Voltage VCB Vdc **TO−220** BDX33B, BDX34B 80 **CASE 221A** BDX33C, BDX34C 100 **STYLE 1** Emitter−Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc **MARKING DIAGRAM** Continuous 15 Peak Base Current IB 0.25 Adc Total Device Dissipation @ TC = 25 ° C PD 70 W ~~nem~~ Derate above 25 ° C 0.56 W/ ° C BDX3xyG Operating and Storage Junction TJ, Tstg −65 to +150 ° C AY WW Temperature Range ~~=H~~ Stresses exceeding those listed in the Maximum Ratings table may damage the ~~|~~ rm device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. BDX3xy = Device Code x = 3 or 4 **THERMAL CHARACTERISTICS** y = B or C **Characteristics Symbol Max Unit** A = Assembly Location Y = Year Thermal Resistance, Junction−to−Case R JC 1.78 ° C/W WW = Work Week G = Pb−Free Package ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **BDX33B/D** **1** © Semiconductor Components Industries, LLC, 2014 **November, 2014 − Rev. 14** **BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)** **==> picture [235 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140 160<br>TC, CASE TEMPERATURE (°C)<br>PD, POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br> **Figure 1. Power Derating** ## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Sustaining Voltage (Note 1)<br>(IC= 100 mAdc, IB= 0)<br>BDX33B/BDX34B<br>BDX33C/BDX34C|VCEO(sus)|80<br>100|−<br>−|Vdc| |Collector−Emitter Sustaining Voltage (Note 1)<br>(IC= 100 mAdc, IB= 0, RBE= 100)<br>BDX33B/BDX34B<br>BDX33C/BDX33C|VCER(sus)|80<br>100|−<br>−|Vdc| |Collector−Emitter Sustaining Voltage (Note 1)<br>(IC= 100 mAdc, IB= 0, VBE= 1.5 Vdc)<br>BDX33B/BDX34B<br>BDX33C/BDX34C|VCEX(sus)|80<br>100|−<br>−|Vdc| |Collector Cutoff Current<br>(VCE= 1/2 rated VCEO, IB= 0)<br>TC= 25°C<br>TC= 100°C|ICEO|−<br>−|0.5<br>10|mAdc| |Collector Cutoff Current<br>(VCB= rated VCBO, IE= 0)<br>TC= 25°C<br>TC= 100°C|ICBO|−<br>−|1.0<br>5.0|mAdc| |Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)|IEBO|−|10|mAdc| |**ON CHARACTERISTICS**||||| |DC Current Gain (Note 1)<br>(IC= 3.0 Adc, VCE= 3.0 Vdc)<br>BDX33B, 33C/34B, 34C|hFE|750|−|−| |Collector−Emitter Saturation Voltage<br>(IC= 3.0 Adc, IB= 6.0 mAdc)<br>BDX33B, 33C/34B, 34C|VCE(sat)|−|2.5|Vdc| |Base−Emitter On Voltage<br>(IC= 3.0 Adc, VCE= 3.0 Vdc)<br>BDX33B, 33C/34B, 34C|VBE(on)|−|2.5|Vdc| |Diode Forward Voltage<br>(IC= 8.0 Adc)|VF|−|4.0|Vdc| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 2. Pulse Test non repetitive: Pulse Width = 0.25 seconds. **www.onsemi.com** **2** **BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)** **==> picture [492 x 372] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.7 D = 0.5<br>0.5<br>0.3<br>0.2<br>0.2<br>0.1<br>0.1 0.05 P(pk) R�JC(t) = r(t) R�JC<br>0.07 0.02 R� JC = 1.92°C/W<br>0.05 D CURVES APPLY FOR POWER<br>t 1 SINGLE PULSE TRAIN SHOWN<br>0.030.02 0.01 SINGLE PULSE DUTY CYCLE, D = t t 2 PULSE1 /t 2 T READ TIME AT t J(pk) - TC = P(pk)1 R�JC(t)<br>0.01<br>0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000<br>t, TIME OR PULSE WIDTH (ms)<br>Figure 1. Thermal Response<br>20 20<br>100 100<br>10 500 �s �s 10 500 �s �s<br>5.0 ms 5.0 ms<br>5.0 5.0<br>1.0 ms 1.0 ms<br>TC = 25°C dc TC = 25°C dc<br>2.0 2.0<br>1.0 1.0<br>BONDING WIRE LIMITED BONDING WIRE LIMITED<br>0.5 THERMALLY LIMITED @ TC = 25°C 0.5 THERMALLY LIMITED @ TC = 25°C<br>�(SINGLE PULSE) �(SINGLE PULSE)<br>0.2 SECOND BREAKDOWN LIMITED 0.2 SECOND BREAKDOWN LIMITED<br>0.1 CURVES APPLY BELOW RATED VCEO 0.1 CURVES APPLY BELOW RATED VCEO<br>0.05 BDX34B 0.05 BDX33B<br>BDX34C BDX33C<br>0.02 0.02<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>r(t) EFFECTIVE TRANSIENT<br>THERMAL RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (AMP)<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br> **Figure 2. Active−Region Safe Operating Area** There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) = 150°C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **==> picture [488 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000 300<br>5000 TJ = 25°C<br>3000 200<br>2000<br>1000<br>500 TJ = 25°C<br>300 VCE = 4.0 Vdc 100 Cob<br>200 IC = 3.0 Adc<br>100 70 Cib<br>50<br>50<br>PNP PNP<br>30<br>20 NPN NPN<br>10 30<br>1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Small−Signal Current Gain Figure 4. Capacitance<br>C, CAPACITANCE (pF)<br>hFE, SMALL-SIGNAL CURRENT GAIN<br>**----- End of picture text -----**<br> **www.onsemi.com** **3** ## **BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)** ## **NPN BDX33B, 33C** ## **PNP BDX34B, 34C** **==> picture [482 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 20,000 20,000<br>VCE = 4.0 V VCE = 4.0 V<br>10,000 10,000<br>5000 TJ = 150°C 5000 TJ = 150°C<br>3000 3000<br>2000 25°C 2000 25°C<br>1000 1000<br>-�55°C -�55°C<br>500 500<br>300 300<br>200 200<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br> **Figure 5. DC Current Gain** **==> picture [487 x 387] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 3.0<br>TJ = 25°C TJ = 25°C<br>2.6 2.6<br>IC = 2.0 A 4.0 A 6.0 A IC = 2.0 A 4.0 A 6.0 A<br>2.2 2.2<br>1.8 1.8<br>1.4 1.4<br>1.0 1.0<br>0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30<br>IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)<br>Figure 6. Collector Saturation Region<br>3.0 3.0<br>TJ = 25°C TJ = 25°C<br>2.5 2.5<br>2.0 2.0<br>1.5 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V<br>1.0 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250<br>VCE(sat) @ IC/IB = 250<br>VCE(sat) @ IC/IB = 250<br>0.5 0.5<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 7. “On” Voltages** **www.onsemi.com** **4** **BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |BDX33BG|TO−220<br>(Pb−Free)|50 Units / Rail| |BDX33CG|TO−220<br>(Pb−Free)|50 Units / Rail| |BDX34BG|TO−220<br>(Pb−Free)|50 Units / Rail| |BDX34CG|TO−220<br>(Pb−Free)|50 Units / Rail| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **5** **BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)** ## **PACKAGE DIMENSIONS** **TO−220** CASE 221A−09 ISSUE AH **==> picture [233 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> SEATING<br>−T− PLANE<br>B F C<br>T S<br>4<br>Q A<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>THe V J |<br>G<br>D<br>;<br>N<br>**----- End of picture text -----**<br> - NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. |**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**| |---|---|---|---|---| ||**MIN**<br>**INCHES**|**MAX**<br>**INCHES**|**MIN**<br>**MILLIMETERS**|**MAX**<br>**MILLIMETERS**| |**DIM**<br>**A**|**MIN**<br>0.570|**MAX**<br>0.620|**MIN**<br>14.48|**MAX**<br>15.75| |**B**|0.380|0.415|9.66|10.53| |**B**<br>**C**|0.380<br>0.160|0.415<br>0.190|9.66<br>4.07|10.53<br>4.83| |**D**|0.025|0.038|0.64|0.96| |**F**|0.142|0.161|3.61|4.09| |**G**|0.095|0.105|2.42|2.66| |**H**|0.110|0.161|2.80|4.10| |**J**|0.014|0.024|0.36|0.61| |**K**|0.500|0.562|12.70|14.27| |**L**|0.045|0.060|1.15|1.52| |**N**|0.190|0.210|4.83|5.33| |**Q**|0.100|0.120|2.54|3.04| |**Q**<br>**R**<br>SSEEe|0.100<br>0.080<br>SSEEe|0.120<br>0.110<br>SSEEe|2.54<br>2.04<br>SSEEe|3.04<br>2.79<br>SSEEe| |**S**<br>SSEEe|0.045<br>SSEEe|0.055<br>SSEEe|1.15<br>SSEEe|1.39<br>SSEEe| |**S**<br>**T**<br>SSEEe|0.045<br>0.235<br>SSEEe|0.055<br>0.255<br>SSEEe|1.15<br>5.97<br>SSEEe|1.39<br>6.47<br>SSEEe| |**U**<br>SSEEe|0.000<br>SSEEe|0.050<br>SSEEe|0.00<br>SSEEe|1.27<br>SSEEe| |**V**<br>SSEEe|0.045<br>SSEEe|---<br>SSEEe|1.15<br>SSEEe|---<br>SSEEe| |**Z**<br>SSEEe|---<br>SSEEe|0.080<br>SSEEe|---<br>SSEEe|2.04<br>SSEEe| STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative **www.onsemi.com** **BDX33B/D** **6**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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