BDW93C

**==> picture [7 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
®<br>**----- End of picture text -----**<br>


## **BDW93C BDW94B/BDW94C** 

## COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 

- I STMicroelectronics PREFERRED SALESTYPES 

- I COMPLEMENTARY PNP - NPN DEVICES 

- I INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 

## **APPLICATIONS** 

- I LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 

## **DESCRIPTION** 

The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. 

**==> picture [80 x 80] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>1<br>**----- End of picture text -----**<br>


**TO-220** 

The complementary PNP type is BDW94C. Also BDW94B is a PNP type. 

## **INTERNAL  SCHEMATIC  DIAGRAM** 

**==> picture [85 x 74] intentionally omitted <==**

**==> picture [86 x 74] intentionally omitted <==**

**==> picture [128 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
R1 Typ. = 10 KΩ          R2 Typ. = 150 Ω<br>**----- End of picture text -----**<br>


## **ABSOLUTE  MAXIMUM  RATINGS** 

|**Symbol**|**Parameter**||**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|
|||**NPN**||**BDW93C**||
|||**PNP**|**BDW94B**|**BDW94C**||
|VCBO|Collector-Base Voltage(IE= 0)||80|100|V|
|VCEO|Collector-Emitter Voltage(IB= 0)||80|100|V|
|IC|Collector Current||12||A|
|ICM|Collector Peak Current||15||A|
|IB|Base Current||0.2||A|
|Ptot|Total Dissipation at Tc ≤25 oC||80||W|
|Tstg|Storage Temperature||-65 to 150||oC|
|Tj|Max. Operating Junction Temperature||150||oC|



For PNP types voltage and current values are negative. 

1/6 

October 1999 

**BDW93C/BDW94B/BDW94C** 

## **THERMAL  DATA** 

Rthj-case Thermal  Resistance  Junction-case 1.56 oC/W 

## **ELECTRICAL  CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified) 

|**ELECTRIC**|**AL  CHARACTERISTIC**|**S**(Tcase= 25oC unless otherwise sp|ecified)||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ICBO|Collector Cut-off<br>Current (IE= 0)|for**BDW94B**VCB= 80 V<br>for**BDW93C/94C**VCB= 100 V<br>Tcase= 150oC<br>for**BDW94B**VCB= 80 V<br>for**BDW93C/94C**VCB= 100 V|||100<br>100<br>5<br>5|µA<br>µA<br>mA<br>mA|
|ICEO|Collector Cut-off<br>Current (IB= 0)|for**BDW94B**VCE= 80 V<br>for**BDW93C/94C**VCE= 100 V|||1<br>1|mA<br>mA|
|IEBO|Emitter Cut-off Current<br>(IC= 0)|VEB= 5 V|||2|mA|
|VCEO(sus)∗|Collector-Emitter<br>Sustaining Voltage<br>(IB= 0)|IC= 100 mA<br>for**BDW94B**<br>for**BDW93C/94C**|80<br>100|||V<br>V|
|VCE(sat)∗|Collector-Emitter<br>Saturation Voltage|IC= 5 A                     IB= 20 mA<br>IC= 10 A                   IB= 100 mA|||2<br>3|V<br>V|
|VBE(sat)∗|Base-Emitter<br>Saturation Voltage|IC= 5 A                     IB= 20 mA<br>IC= 10 A                   IB= 100 mA|||2.5<br>4|V<br>V|
|hFE∗|DC Current Gain|IC= 3 A                     VCE= 3 V<br>IC= 5 A                     VCE= 3 V<br>IC= 10 A                   VCE= 3 V|1000<br>750<br>100||20K||
|VF*|Parallel-diode Forward<br>Voltage|IF= 5 A<br>IF= 10 A||1.3<br>1.8|2<br>4|V<br>V|
|hfe|Small Signal Current<br>Gain|IC= 1 A                     VCE= 10 V<br>f = 1 MHz|20||||



∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. 

2/6 

**BDW93C/BDW94B/BDW94C** 

## Safe Operating Area 

Collector Emitter Saturation Voltage (NPN types) 

Collector Emitter Saturation Voltage (NPN types) 

DC Current Gain (NPN types) 

DC Transconductance (NPN types) 

Collector Emitter Saturation Voltage (PNP types) 

3/6 

**BDW93C/BDW94B/BDW94C** 

Saturated Switching Characteristics (NPN types) 

Collector Emitter Saturation Voltage (PNP types) 

Saturated Switching Characteristics (PNP types) 

DC Current Gain (PNP types) 

DC Transconductance (PNP types) 

4/6 

**BDW93C/BDW94B/BDW94C** 

## **TO-220 MECHANICAL DATA** 

|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.40||4.60|0.173||0.181|
|C|1.23||1.32|0.048||0.051|
|D|2.40||2.72|0.094||0.107|
|D1||1.27|||0.050||
|E|0.49||0.70|0.019||0.027|
|F|0.61||0.88|0.024||0.034|
|F1|1.14||1.70|0.044||0.067|
|F2|1.14||1.70|0.044||0.067|
|G|4.95||5.15|0.194||0.203|
|G1|2.4||2.7|0.094||0.106|
|H2|10.0||10.40|0.393||0.409|
|L2||16.4|||0.645||
|L4|13.0||14.0|0.511||0.551|
|L5|2.65||2.95|0.104||0.116|
|L6|15.25||15.75|0.600||0.620|
|L7|6.2||6.6|0.244||0.260|
|L9|3.5||3.93|0.137||0.154|
|DIA.|3.75||3.85|0.147||0.151|



**==> picture [228 x 53] intentionally omitted <==**

**==> picture [226 x 108] intentionally omitted <==**

**==> picture [31 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
P011C<br>**----- End of picture text -----**<br>


5/6 

**BDW93C/BDW94B/BDW94C** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 

- © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES 

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 

**http://www.st.com** 

. 

6/6