BDW46G

## BDW42G (NPN), Darlington Complementary BDW46G, BDW47G (PNP) Silicon Power Transistors 

This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. 

## **Features** 

- High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. 

- Collector Emitter Sustaining Voltage @ 30 mAdc: 

   - VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 

## **www.onsemi.com** 

**15 AMP DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLT, 85 WATT** 

- Low Collector Emitter Saturation Voltage 

   - VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 

   - 3.0 Vdc (max) @ IC = 10.0 Adc 

4 1 if 2 3 **TO−220 CASE 221A STYLE 1 MARKING DIAGRAM** BDWxx AYWWG BDWxx = Device Code IN x = 42, 46, or 47 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 

- Monolithic Construction with Built−In Base Emitter Shunt resistors 

- TO−220 Compact Package 

- These Devices are Pb−Free and are RoHS Compliant* 

**MAXIMUM RATINGS** 

**Rating Symbol Value Unit** Collector-Emitter Voltage VCEO Vdc BDW46 80 BDW42, BDW47 100 Collector-Base Voltage VCB Vdc BDW46 80 BDW42, BDW47 100 Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 15 Adc Base Current IB 0.5 Adc Total Device Dissipation PD @ TC = 25 ° C 85 W Derate above 25 ° C 0.68 W/ ° C Operating and Storage Junction TJ, Tstg −55 to +150 ° C Temperature Range ~~aa~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

**==> picture [483 x 115] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|Characteristic|Symbol|Max|Unit|ORDERING INFORMATION|
|Thermal Resistance,|R|JC|1.47|°|C/W|
|Junction−to−Case|Device|Package|Shipping|
|BDW42G|TO−220|50 Units/Rail|
|(Pb−Free)|
|BDW46G|TO−220|50 Units/Rail|
|(Pb−Free)|
|*For additional information on our Pb−Free strategy  and soldering details, please|
|download the ON Semiconductor Soldering and Mounting Techniques|BDW47G|TO−220|50 Units/Rail|
|Reference Manual, SOLDERRM/D.|
|(Pb−Free)|
|tt —|

**----- End of picture text -----**<br>


- *For additional information on our Pb−Free strategy  and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: 

© Semiconductor Components Industries, LLC, 2016 **August, 2016 − Rev. 17** 

**BDW42/D** 

## **BDW42G (NPN), BDW46G, BDW47G (PNP)** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector Emitter Sustaining Voltage (Note 1)<br>(IC= 30 mAdc, IB= 0)<br>BDW46<br>BDW42/BDW47|VCEO(sus)|80<br>100|−<br>−|Vdc|
|Collector Cutoff Current<br>(VCE= 40 Vdc, IB= 0)<br>BDW46<br>(VCE= 50 Vdc, IB= 0)<br>BDW42/BDW47|ICEO|−<br>−|2.0<br>2.0|mAdc|
|Collector Cutoff Current<br>(VCB= 80 Vdc, IE= 0)<br>BDW46<br>(VCB= 100 Vdc, IE= 0)<br>BDW42/BDW47|ICBO|−<br>−|1.0<br>1.0|mAdc|
|Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)|IEBO|−|2.0|mAdc|
|**ON CHARACTERISTICS**(Note 1)|||||
|DC Current Gain<br>(IC= 5.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)|hFE|1000<br>250|−<br>−||
|Collector−Emitter Saturation Voltage<br>(IC= 5.0 Adc, IB= 10 mAdc)<br>(IC= 10 Adc, IB= 50 mAdc)|VCE(sat)|−<br>−|2.0<br>3.0|Vdc|
|Base−Emitter On Voltage<br>(IC= 10 Adc, VCE= 4.0 Vdc)|VBE(on)|−|3.0|Vdc|
|**SECOND BREAKDOWN**(Note 2)|||||
|Second Breakdown Collector<br>Current with Base Forward Biased<br>BDW42<br>VCE= 28.4 Vdc<br>VCE= 40 Vdc<br>BDW46/BDW47<br>VCE= 22.5 Vdc<br>VCE= 36 Vdc|IS/b|3.0<br>1.2<br>3.8<br>1.2|−<br>−<br>−<br>−|Adc|
|**DYNAMIC CHARACTERISTICS**|||||
|Magnitude of common emitter small signal short circuit current transfer ratio<br>(IC= 3.0 Adc, VCE= 3.0 Vdc, f = 1.0 MHz)|fT|4.0|−|MHz|
|Output Capacitance<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>BDW42<br>BDW46/BDW47|Cob|−<br>−|200<br>300|pF|
|Small−Signal Current Gain<br>(IC= 3.0 Adc, VCE= 3.0 Vdc, f = 1.0 kHz)|hfe|300|−||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

1. Pulse Test: Pulse Width = 300 � s, Duty Cycle = 2.0%. 

2. Pulse Test non repetitive: Pulse Width = 250 ms. 

**www.onsemi.com** 

**2** 

## **BDW42G (NPN), BDW46G, BDW47G (PNP)** 

**==> picture [234 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>25 50 75 100 125 150<br>TC, CASE TEMPERATURE (°C)<br>PD, POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br>


**Figure 1. Power Temperature Derating Curve** 

**==> picture [491 x 405] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.0<br>RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS - 30 VVCC 3.0 ts BDW46, 47 (PNP) BDW42 (NPN)<br>D1 MUST BE FAST RECOVERY TYPES, e.g.: 2.0<br>�1N5825 USED ABOVE I�MSD6100 USED BELOW IB �B � 100 mA 100 mA RC SCOPE 1.0 tf<br>TUT<br>0.7<br>V2 RB 0.5<br>APPROX<br>+ 8.0 V 51 D1 � 8.0 k � 150 0.3 tr<br>0 0.2 VCC = 30 V<br>V1 + 4.0 V IC/IB = 250<br>APPROX- 12 V 25 �s for td and tr, D1 id disconnected 0.070.1 ITB1J = 25 = IB2°C td @ VBE(off) = 0 V<br>DUTY CYCLE = 1.0%tr, tf � 10 ns For NPN test circuit reverse all polaritiesand V2 = 0 0.050.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (AMP)<br>Figure 2. Switching Times Test Circuit Figure 3. Switching Times<br>1.0<br>0.7 D = 0.5<br>0.5<br>0.3<br>0.2<br>0.2<br>0.1<br>0.1 0.05 P(pk) R�JC(t) = r(t) R�JC<br>0.07 0.02 R� JC = 1.92°C/W<br>0.05 D CURVES APPLY FOR POWER<br>t 1 PULSE TRAIN SHOWN<br>0.030.02 0.01 SINGLE PULSE DUTY CYCLE, D = t t 2 1 /t 2 T READ TIME AT t J(pk) - TC = P(pk) 1  R�JC(t)<br>0.01<br>0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000<br>t, TIME OR PULSE WIDTH (ms)<br>μ<br>t, TIME (��s)<br>r(t) EFFECTIVE TRANSIENT<br>THERMAL RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 4. Thermal Response** 

**www.onsemi.com** 

**3** 

**BDW42G (NPN), BDW46G, BDW47G (PNP)** 

## **ACTIVE−REGION SAFE OPERATING AREA** 

**==> picture [489 x 553] intentionally omitted <==**

**----- Start of picture text -----**<br>
50 50<br>0.1 ms 0.1 ms<br>20 20<br>10 TJ = 25°C 1.0 ms 10 TJ = 25°C 1.0 ms<br>0.5 ms 0.5 ms<br>5.0 5.0<br>SECOND BREAKDOWN LIMIT dc SECOND BREAKDOWN LIMIT<br>2.0 BONDING WIRE LIMIT 2.0 BONDING WIRE LIMIT<br>dc<br>1.0 THERMAL LIMITED 1.0 THERMAL LIMITED<br>@ TC = 25°C (SINGLE PULSE) @ TC = 25°C (SINGLE PULSE)<br>0.5 0.5<br>0.2 0.2<br>0.1 0.1 BDW46<br>BDW42 BDW47<br>0.05 0.05<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>Figure 5. BDW42 Figure 6. BDW46 and BDW47<br>There are two limitations on the power handling ability of a Second breakdown pulse limits are valid for duty cycles to<br>transistor: average junction temperature and second 10% provided TJ(pk)J(pk) ≤ 200°C. TJ(pk) may be calculated from 200°C. TJ(pk) may be calculated from°C. TJ(pk) may be calculated fromC. TJ(pk) may be calculated fromJ(pk) may be calculated from may be calculated from<br>breakdown. Safe operating area curves indicate IC − VCE limitsC − VCE limits − VCE limitsCE limits limits the data in Figure 4. At high case temperatures, thermal<br>of the transistor that must be observed for reliable operation; limitations will reduce the power that can be handled to values<br>i.e., the transistor must not be subjected to greater dissipation less than the limitations imposed by second breakdown.<br>than the curves indicate. The data of Figure 5 and 6 is based on *Linear extrapolation<br>TJ(pk) = 200°C; TC is variable depending on conditions.J(pk) = 200°C; TC is variable depending on conditions. = 200°C; TC is variable depending on conditions.°C; TC is variable depending on conditions.C; TC is variable depending on conditions.C is variable depending on conditions. is variable depending on conditions.<br>10,000 300<br>5000 TJ = + 25°C<br>3000 200<br>2000<br>1000<br>500<br>300 TJ = 25°C 100 Cob<br>200<br>100 IVCCE = 3.0 A = 3.0 V 70 Cib<br>50<br>50<br>30 BDW46, 47 (PNP)<br>BDW46, 47 (PNP)<br>20 BDW42 (NPN)<br>BDW42 (NPN)<br>10 30<br>1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>C, CAPACITANCE (pF)<br>hFE, SMALL-SIGNAL CURRENT GAIN<br>**----- End of picture text -----**<br>


Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)J(pk) ≤ 200°C. TJ(pk) may be calculated from 200°C. TJ(pk) may be calculated from°C. TJ(pk) may be calculated fromC. TJ(pk) may be calculated fromJ(pk) may be calculated from may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. *Linear extrapolation 

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limitsC − VCE limits − VCE limitsCE limits limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 and 6 is based on TJ(pk) = 200°C; TC is variable depending on conditions.J(pk) = 200°C; TC is variable depending on conditions. = 200°C; TC is variable depending on conditions.°C; TC is variable depending on conditions.C; TC is variable depending on conditions.C is variable depending on conditions. is variable depending on conditions. 

**Figure 7. Small−Signal Current Gain** 

**Figure 8. Capacitance** 

**www.onsemi.com** 

**4** 

**BDW42G (NPN), BDW46G, BDW47G (PNP)** 

**BDW42 (NPN)** 

**BDW46, 47 (PNP)** 

**==> picture [487 x 595] intentionally omitted <==**

**----- Start of picture text -----**<br>
20,000 20,000<br>VCE = 3.0 V VCE = 3.0 V<br>10,000 10,000<br>7000<br>5000 TJ = 150°C 5000 TJ = 150°C<br>3000 3000<br>2000 25°C 2000 25°C<br>1000 1000<br>500 -�55°C 700 -�55°C<br>500<br>300 300<br>200 200<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>Figure 9. DC Current Gain<br>3.0<br>TJ = 25°C 3.0 TJ = 25°C<br>2.6<br>2.6<br>IC = 2.0 A 4.0 A 6.0 A<br>IC = 2.0 A 4.0 A 6.0 A<br>2.2<br>2.2<br>1.8<br>1.8<br>1.4<br>1.4<br>1.0<br>0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0<br>0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30<br>IB, BASE CURRENT (mA)<br>IB, BASE CURRENT (mA)<br>Figure 10. Collector Saturation Region<br>3.0 3.0<br>TJ = 25°C TJ = 25°C<br>2.5 2.5<br>2.0 2.0<br>1.5 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V<br>1.0 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250<br>VCE(sat) @ IC/IB = 250<br>VCE(sat) @ IC/IB = 250<br>0.5 0.5<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 11. “On” Voltages** 

**www.onsemi.com** 

**5** 

**BDW42G (NPN), BDW46G, BDW47G (PNP)** 

**BDW42 (NPN)** 

**BDW46, 47 (PNP)** 

**==> picture [489 x 387] intentionally omitted <==**

**----- Start of picture text -----**<br>
+�5.0 +�5.0<br>+�4.0 +�4.0<br>*IC/IB � 250 *IC/IB � 250<br>+�3.0 +�3.0<br>+�2.0 25°C to 150°C +�2.0 +25°C to 150°C<br>+�1.0 +�1.0<br>-�55°C to 25°C<br>0 0<br>-�1.0 *�VC for VCE(sat) -�1.0 *�VC for VCE(sat)<br>-�2.0 25°C to 150°C -�2.0 �VB for VBE -�55°C to +25°C<br>-�3.0-�4.0 �VB for VBE -�55°C  to 25°C -�3.0-�4.0 +25°C to 150°C -�55°C to +25°C<br>-�5.0 -�5.0<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>Figure 12. Temperature Coefficients<br>10 [5] 10 [5]<br>REVERSE FORWARD REVERSE FORWARD<br>10 [4] 10 [4]<br>V CE  = 30 V VCE = 30 V<br>10 [3] 10 [3]<br>10 [2] 10 [2]<br>T J  = 150°C T J  = 150°C<br>10 [1] 10 [1]<br>100°C<br>10 [0] 25°C 10 [0] 100°C<br>25°C<br>10 [-�1] 10 [-�1]<br>+�0.6 +�0.4 +�0.2 0 -�0.2 -�0.4 -�0.6 -�0.8 -�1.0 -�1.2 -�1.4 -�0.6 -�0.4 -�0.2 0 +�0.2 +�0.4 +�0.6 +�0.8 +�1.0 +�1.2 + 1.4<br>VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)<br>C)° C)°<br>V, TEMPERATURE COEFFICIENT (mV/θ V, TEMPERATURE COEFFICIENTS (mV/θ<br>μ μ<br>, COLLECTOR CURRENT (��A) , COLLECTOR CURRENT (��A)<br>IC IC<br>**----- End of picture text -----**<br>


**Figure 13. Collector Cut−Off Region** 

**==> picture [149 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
NPN COLLECTOR<br>BDW42<br>BASE<br>� 8.0 k � 60<br>EMITTER<br>**----- End of picture text -----**<br>


**==> picture [145 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
PNP COLLECTOR<br>BDW46<br>BDW47<br>BASE<br>� 8.0 k � 60<br>EMITTER<br>**----- End of picture text -----**<br>


**Figure 14. Darlington Schematic** 

**www.onsemi.com** 

**6** 

**BDW42G (NPN), BDW46G, BDW47G (PNP)** 

## **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A−09 ISSUE AH 

**==> picture [233 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEATING<br>−T− PLANE<br>B F C<br>T S<br>4<br>Q A<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>T V e J |<br>G<br>D<br>;<br>N<br>**----- End of picture text -----**<br>


- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 

|**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|---|---|
||**MIN**<br>**INCHES**|**MAX**<br>**INCHES**|**MIN**<br>**MILLIMETERS**|**MAX**<br>**MILLIMETERS**|
|**DIM**<br>**A**|**MIN**<br>0.570|**MAX**<br>0.620|**MIN**<br>14.48|**MAX**<br>15.75|
|**B**|0.380|0.415|9.66|10.53|
|**B**<br>**C**|0.380<br>0.160|0.415<br>0.190|9.66<br>4.07|10.53<br>4.83|
|**D**|0.025|0.038|0.64|0.96|
|**F**|0.142|0.161|3.61|4.09|
|**G**|0.095|0.105|2.42|2.66|
|**H**|0.110|0.161|2.80|4.10|
|**J**|0.014|0.024|0.36|0.61|
|**K**|0.500|0.562|12.70|14.27|
|**L**|0.045|0.060|1.15|1.52|
|**N**|0.190|0.210|4.83|5.33|
|**Q**|0.100|0.120|2.54|3.04|
|**Q**<br>**R**<br>SEEEe|0.100<br>0.080<br>SEEEe|0.120<br>0.110<br>SEEEe|2.54<br>2.04<br>SEEEe|3.04<br>2.79<br>SEEEe|
|**S**<br>SEEEe|0.045<br>SEEEe|0.055<br>SEEEe|1.15<br>SEEEe|1.39<br>SEEEe|
|**S**<br>**T**<br>SEEEe|0.045<br>0.235<br>SEEEe|0.055<br>0.255<br>SEEEe|1.15<br>5.97<br>SEEEe|1.39<br>6.47<br>SEEEe|
|**U**<br>SEEEe|0.000<br>SEEEe|0.050<br>SEEEe|0.00<br>SEEEe|1.27<br>SEEEe|
|**V**<br>SEEEe|0.045<br>SEEEe|---<br>SEEEe|1.15<br>SEEEe|---<br>SEEEe|
|**Z**<br>SEEEe|---<br>SEEEe|0.080<br>SEEEe|---<br>SEEEe|2.04<br>SEEEe|



ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**N. American Technical Support** : 800−282−9855 Toll Free USA/Canada 

**ON Semiconductor Website** : **www.onsemi.com** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

**www.onsemi.com** 

**BDW42/D** 

**7**