Illustrative purposes only
BDV65BG
Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 10 A, 125 W, TO-247, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Power Dissipation: 125W
- DC Current Gain hFE: 1000hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transistor Case Style: TO-247
- DC Current Gain hFE Min: 1000hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 10A
- Collector Emitter Voltage Max: 100V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.46 € |
| Current stock | 5770 |
| Lead time | 7 days |
Datasheet
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