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BDV65BG
Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 10 A, 125 W, TO-247, Through Hole
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 125W
- DC Current Gain hFE: 1000hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transistor Case Style: TO-247
- DC Current Gain hFE Min: 1000hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 10A
- Collector Emitter Voltage Max: 100V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.31 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
## Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. ## **Features** - High DC Current Gain − HFE = 1000 (min) @ 5 Adc - Monolithic Construction with Built−in Base Emitter Shunt Resistors - These are Pb−Free Devices* ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Max**|**Unit**| |Collector−Emitter Voltage|VCEO|100|Vdc| |Collector−Base Voltage|VCB|100|Vdc| |Emitter−Base Voltage|VEB|5.0|Vdc| |Collector Current<br>− Continuous<br>− Peak|IC|10<br>20|Adc| |Base Current|IB|0.5|Adc| |Total Device Dissipation @ TC= 25°C<br>Derate above 25°C|PD|125<br>1.0|W<br>W/°C| |Operating and Storage Junction Temperature<br>Range|TJ, Tstg|-65 to<br>+150|°C| ## **THERMAL CHARACTERISTICS** Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ## **http://onsemi.com** ## **10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100−120 VOLTS,** ## **125 WATTS** **==> picture [168 x 100] intentionally omitted <==** **----- Start of picture text -----**<br> NPN PNP<br>COLLECTOR 2 COLLECTOR 2,4<br>BASE BASE<br>1 1<br>EMITTER 3 EMITTER 3<br>BDV65B BDV64B<br>**----- End of picture text -----**<br> **==> picture [44 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> SOT−93<br>(TO−218)<br>CASE 340D<br>**----- End of picture text -----**<br> **==> picture [21 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>2<br>3<br>**----- End of picture text -----**<br> **==> picture [44 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> TO−247<br>CASE 340L<br>STYLE 3<br>**----- End of picture text -----**<br> **NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827.** ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: **BDV65B/D** **1** © Semiconductor Components Industries, LLC, 2012 **May, 2012 − Rev. 14** ## **BDV65B (NPN), BDV64B (PNP)** ## **MARKING DIAGRAMS** **==> picture [267 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> TO−247<br>TO−218<br>BDV6xB<br>AYWWG<br>AYWWG<br>BDV6xB<br>1 BASE 3 EMITTER<br>1 BASE 3 EMITTER<br>2 COLLECTOR<br>2 COLLECTOR<br>BDV6xB = Device Code<br>x = 4 or 5<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||||||||| |---|---|---|---|---|---|---|---|---| |**Device Order Number**|||**Package Type**|||||**Shipping**| |BDV65BG|||TO−218<br>(Pb−Free)|||||30 Units / Rail| |BDV64BG|||TO−218<br>(Pb−Free)|||||30 Units / Rail| |BDV65BG|||TO−247<br>(Pb−Free)|||||30 Units / Rail| |BDV64BG|||TO−247<br>(Pb−Free)|||||30 Units / Rail| |1.0<br>0.8<br>0<br>DERATING FACTOR<br>0.4<br>0.6<br>0.2||||||||150| |||||||||| |||||||||| |||||||||| |||||||||| |||||||||| |||||||||| |||||||||| |||||||||| |||||||||| |||||||||| ||0<br>25||50<br>100<br>125<br>TC, CASE TEMPERATURE (°C)<br>75|||||| **Figure 1. Power Derating** **http://onsemi.com** **2** ## **BDV65B (NPN), BDV64B (PNP)** |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Collector−Emitter Sustaining Voltage (1)<br>(IC= 30 mAdc, IB= 0)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>VCEO(sus)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>100<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>ÎÎ<br>ÎÎ<br>Vdc| |---| |**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>**ÎÎÎ**<br>**ÎÎ**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 50 Vdc, IB= 0)<br>**ÎÎÎÎÎ**<br>ICEO<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>1.0<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= 100 Vdc, IE= 0)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.4<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= 50 Vdc, IE= 0, TC= 150°C)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>5.0<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎ<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain<br>(IC= 5.0 Adc, VCE= 4.0 Vdc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1000<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Collector−Emitter Saturation Voltage<br>(IC= 5.0 Adc, IB= 0.02 Adc)<br>ÎÎÎÎÎ<br>VCE(sat)<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>2.0<br>ÎÎ<br>Vdc| |**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>**ÎÎÎ**<br>**ÎÎ**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Base−Emitter Saturation Voltage<br>(IC= 5.0 Adc, VCE= 4.0 Vdc)<br>ÎÎÎÎÎ<br>VBE(on)<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>2.5<br>ÎÎ<br>Vdc| **http://onsemi.com** **3** **BDV65B (NPN), BDV64B (PNP)** **==> picture [485 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> NPN PNP<br>10K<br>VCE = 4 V<br>10K<br>1K<br>1K<br>4 1<br>0.1 1 10 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br> **Figure 2. DC Current Gain** **Figure 3. DC Current Gain** **==> picture [238 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1 VBE(sat) @ IC/IB = 250<br>0.1<br>0.1 1 10<br>IC, COLLECTOR CURRENT (A)<br>V, VOLTAGE (V)<br>**----- End of picture text -----**<br> **Figure 4. “On” Voltages** **==> picture [238 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1 VBE(sat) @ IC/IB = 250<br>0.1<br>0.1 1 10<br>IC, COLLECTOR CURRENT (A)<br>V, VOLTAGE (V)<br>**----- End of picture text -----**<br> **Figure 5. “On” Voltages** **==> picture [231 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>100 μs<br>50<br>20<br>5.0 ms 1.0 ms<br>10 dc<br>5<br>SECONDARY BREAKDOWN<br>LIMITED @ TJ � 150°C<br>1 THERMAL LIMIT @ TC = 25°C<br>BONDING WIRE LIMIT<br>BDV65B, BDV64B<br>1 10 30 50 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>IC, COLLECTOR CURRENT (A)<br>**----- End of picture text -----**<br> There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150°C, TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) � 150°C. TJ(pk) may be calculated from the data in Figure 7. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 6. Active Region Safe Operating Area** **http://onsemi.com 4** **BDV65B (NPN), BDV64B (PNP)** **==> picture [495 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>D = 0.5<br>0.5<br>0.2<br>0.2<br>0.1 0.1 P(pk) ZθJC(t) = r(t) RθJC<br>0.05 RθJC = 1.0°C/W MAX<br>0.05 D CURVES APPLY FOR POWER<br>0.02 t 1 PULSE TRAIN SHOWN<br>0.03 t 2 READ TIME AT t1<br>0.01 (SINGLE PULSE) DUTY CYCLE, D = t1/t2 T J(pk) - T C = P (pk) Z θJC(t)<br>0.01<br>0.01 0.05 0.1 0.5 1.0 5 10 50 100 500 1000<br>t, TIME (ms)<br>(NORMALIZED)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 7. Thermal Response** **http://onsemi.com** **5** **BDV65B (NPN), BDV64B (PNP)** ## **PACKAGE DIMENSIONS** **SOT−93 (TO−218)** CASE 340D−02 ISSUE E **==> picture [204 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>B Q E<br>U 4<br>A<br>S L<br>K 1 2 3<br>J<br>D<br>H<br>V<br>G<br>**----- End of picture text -----**<br> NOTES: **==> picture [118 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>MILLIMETERS INCHES<br>DIM MIN MAX MIN MAX<br>A --- 20.35 --- 0.801<br>B 14.70 15.20 0.579 0.598<br>C 4.70 4.90 0.185 0.193<br>D 1.10 1.30 0.043 0.051<br>E 1.17 1.37 0.046 0.054<br>G 5.40 5.55 0.213 0.219<br>H 2.00 3.00 0.079 0.118<br>J 0.50 0.78 0.020 0.031<br>K 31.00 REF 1.220 REF<br>L --- 16.20 --- 0.638<br>Q 4.00 4.10 0.158 0.161<br>S 17.80 18.20 0.701 0.717<br>U 4.00 REF 0.157 REF<br>V 1.75 REF 0.069<br>STYLE 1:<br>PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>4. COLLECTOR<br>**----- End of picture text -----**<br> **TO−247** CASE 340L−02 ISSUE F **==> picture [312 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> −T−<br>C<br>− B−<br>E<br>U L<br>N<br>4<br>A<br>−Q−<br>1 2 3 0.63 (0.025) [M] T B M<br>P<br>−Y−<br>K<br>W J<br>F 2 PL H<br>G<br>D 3 PL<br>0.25 (0.010) [M] Y Q S<br>**----- End of picture text -----**<br> NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. |S|**DIM**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**| |---|---|---|---|---|---| |||**MIN**|**MAX**|**MIN**|**MAX**| ||**A**<br>|20.32|21.08|0.800|8.30| ||**B**|15.75|16.26|0.620|0.640| ||**C**|4.70|5.30|0.185|0.209| ||**D**|1.00|1.40|0.040|0.055| ||**E**|190|260|0075|0102| ||**F**<br>|.<br>1.65<br>|.<br>2.13<br>|.<br>0.065<br>|.<br>0.084<br>| ||**G**|5.45 BSC||0.215 BSC|| ||**H**|1.50|2.49|0.059|0.098| ||**J**|0.40|0.80|0.016|0.031| ||**K**|19.81|20.83|0.780|0.820| ||**L**|5.40|6.20|0.212|0.244| ||**N**|4.32|5.49|0.170|0.216| ||**P**|---|4.50|---|0.177| ||**Q**|3.55|3.65|0.140|0.144| ||**U**|6.15 BSC||0.242 BSC|| ||**W**|2.87|3.12|0.113|0.123| ||TYLE 3:<br>PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>4COLLECTOR||||| **http://onsemi.com** **6** **BDV65B (NPN), BDV64B (PNP)** **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website** : **www.onsemi.com** **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative **http://onsemi.com** **BDV65B/D** **7**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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