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This product is RoHS compilant

BDV64BG

Bipolar (BJT) Single Transistor, Darlington, PNP, 100 V, 10 A, 125 W, TO-247, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Power Dissipation: 125W
  • DC Current Gain hFE: 1000hFE
  • Transistor Mounting: Through Hole
  • Transistor Polarity: PNP
  • Transistor Case Style: TO-247
  • DC Current Gain hFE Min: 1000hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 10A
  • Collector Emitter Voltage Max: 100V
Delivery and price
Units per pack 1000
Price 1.5 €
Current stock 2707
Lead time 7 days