BD809G

## BD809 (NPN), Plastic High Power BD810 (PNP) Silicon Transistors 

These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. 

## **Features** 

- High DC Current Gain 

- These Devices are Pb−Free and are RoHS Compliant* 

## **www.onsemi.com** 

**10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Rating**|**Symbol**|||**Value**|**Unit**|||**PNP**|||**NPN**|||
|Collector−Emitter Voltage|VCEO|||80|Vdc||COLLECTOR 2, 4||||COLLECTOR 2, 4|||
|Collector−Base Voltage|VCBO|||80|Vdc|||||||||
|Emitter−Base Voltage|VEBO|||5.0|Vdc||1<br>BASE||||1<br>BASE|||
|Collector Current||IC||10|Adc|||||||||
|Base Current||IB||6.0|Adc||EMITTER 3||||EMITTER 3|||
|Total Device Dissipation<br>@ TC= 25°C<br>Derate above 25°C<br>Operating and Storage Junction<br>Temperature Range|PD<br>TJ, Tstg||90<br>0.72<br>−55 to +150||W<br>W/°C<br>°C|||**TO−220**<br>**CASE 221A**<br>4<br>~~‘~~||||||
|Stresses exceeding those listed in the Maximum Ratings table may damage the|||||||||||**STYLE 1**|||
|device. If any of these limits are exceeded, device functionality should not be||||||||||||||
|assumed, damage may occur and reliability may be affected.||||||||123||||||
|**THERMAL CHARACTERISTICS**||||||||||||||
|**Characteristics**||**Symbol**|**Symbol**|**Max**|**Unit**|||**MARKING DIAGRAM**|||**MARKING DIAGRAM**|||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristics**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance, Junction−to−Case|R JC|1.39|°C/W|



BD8xxG AY   WW UMA BD8xx = Device Code x = 09 or 10 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 

## **ORDERING INFORMATION** 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

|**Device**|**Package**|**Shipping**|
|---|---|---|
|BD809G|TO−220<br>(Pb−Free)|50 Units/Rail|
|BD810G|TO−220<br>(Pb−Free)|50 Units/Rail|



Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **November, 2014 − Rev. 8** 

**BD809/D** 

**BD809 (NPN), BD810 (PNP)** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Collector−Emitter Sustaining Voltage (Note 1)<br>(IC= 0.1 Adc, IB= 0)|BVCEO|80|−|Vdc|
|Collector Cutoff Current<br>(VCB= 80 Vdc, IE= 0)|ICBO|−|1.0|mAdc|
|Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)|IEBO|−|2.0|mAdc|
|DC Current Gain<br>(IC= 2.0 A, VCE= 2.0 V)<br>(IC= 4.0 A, VCE= 2.0 V)|hFE|30<br>15|−<br>−|−|
|Collector−Emitter Saturation Voltage (Note 1)<br>(IC= 3.0 Adc, IB= 0.3 Adc)|VCE(sat)|−|1.1|Vdc|
|Base−Emitter On Voltage (Note 1)<br>(IC= 4.0 Adc, VCE= 2.0 Vdc)|VBE(on)|−|1.6|Vdc|
|Current−Gain Bandwidth Product<br>(IC= 1.0 Adc, VCE= 10 Vdc, f = 1.0 MHz)|fT|1.5|−|MHz|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 

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90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150 175<br>TC, CASE TEMPERATURE (°C)C, CASE TEMPERATURE (°C), CASE TEMPERATURE (°C)°C)C)<br>PD, POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br>


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.5 ms 80<br>10 5 ms 1 ms 1 ms<br>70<br>60<br>3 dc 50<br>40<br>1<br>30<br>20<br>0.3<br>10<br>0.1 0<br>1 3 10 30 100 0 25 50 75 100 125 150 175<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)C, CASE TEMPERATURE (°C), CASE TEMPERATURE (°C)°C)C)<br>Figure 1. Active Region DC Safe Operating Area Figure 2. Power−Temperature Derating Curve<br>(see Note on page 3)<br>BD809 (NPN) BD810 (PNP)<br>500 500<br>TJ = 150°C<br>200 25°C 200 TJ = 150°C<br>25°C<br>100 -�55°C 100 -�55°C<br>50 50<br>20 20<br>10 VCE = 2.0 V 10<br>VCE = 2.0 V<br>5.0 5.0<br>0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>IC, COLLECTOR CURRENT (AMP) PD, POWER DISSIPATION (WATTS)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 3. DC Current Gain** 

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**2** 

## **BD809 (NPN), BD810 (PNP)** 

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2.0 2.0<br>1.8 TJ = 25°C 1.8 TJ = 25°C<br>1.6 1.6<br>1.4 1.4<br>1.2 1.2<br>1.0 IC = 1.0 A 1.0 IC = 1.0 A 4.0 A 8.0 A<br>0.8 0.8<br>4.0 A 8.0 A<br>0.6 0.6<br>0.4 0.4<br>0.2 0.2<br>0 0<br>5.0 10 20 50 100 200 500 1000 2000 5000 5.0 10 20 50 100 200 500 1000 2000 5000<br>IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)<br>Figure 4. Collector Saturation Region<br>2.8 2.8<br>2.4 TJ = 25°C 2.4 TJ = 25°C<br>2.0 2.0<br>1.6 1.6<br>1.2 1.2<br>VBE(sat) = IC/IB = 10 VBE(sat) @ IC/IB = 10<br>0.8 0.8<br>0.4 VBE @ VCE = 2.0 V 0.4 VBE @ VCE = 2.0 V<br>VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10<br>0 0<br>0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>Figure 5. “On” Voltages<br>1.0<br>0.7<br>D = 0.5<br>0.5<br>0.3 0.2<br>0.2<br>0.1<br>0.1 0.05 SINGLE P(pk)<br>0.07 0.02 �JC(t) = r(t) �JC PULSE<br>0.05 D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN t 1<br>0.03 SINGLE PULSE READ TIME AT t1 t 2<br>0.02 0.01 T J(pk)  - T C  = P (pk) � JC (t) DUTY CYCLE, D = t 1 /t 2<br>0.01<br>0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 20 30 50 100 200 300 500 1000<br>t, PULSE WIDTH (ms)<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


**Figure 6. Thermal Response** 

## **Note:** 

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 

The data of Figure 1 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

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**3** 

**BD809 (NPN), BD810 (PNP)** 

## **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A−09 ISSUE AH 

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SEATING<br>−T− PLANE<br>B F C<br>T S<br>4<br>Q A<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>THe V J |<br>G<br>D<br>;<br>N<br>**----- End of picture text -----**<br>


- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 

|**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|---|---|
||**MIN**<br>**INCHES**|**MAX**<br>**INCHES**|**MIN**<br>**MILLIMETERS**|**MAX**<br>**MILLIMETERS**|
|**DIM**<br>**A**|**MIN**<br>0.570|**MAX**<br>0.620|**MIN**<br>14.48|**MAX**<br>15.75|
|**B**|0.380|0.415|9.66|10.53|
|**B**<br>**C**|0.380<br>0.160|0.415<br>0.190|9.66<br>4.07|10.53<br>4.83|
|**D**|0.025|0.038|0.64|0.96|
|**F**|0.142|0.161|3.61|4.09|
|**G**|0.095|0.105|2.42|2.66|
|**H**|0.110|0.161|2.80|4.10|
|**J**|0.014|0.024|0.36|0.61|
|**K**|0.500|0.562|12.70|14.27|
|**L**|0.045|0.060|1.15|1.52|
|**N**|0.190|0.210|4.83|5.33|
|**Q**|0.100|0.120|2.54|3.04|
|**Q**<br>**R**<br>SSEEe|0.100<br>0.080<br>SSEEe|0.120<br>0.110<br>SSEEe|2.54<br>2.04<br>SSEEe|3.04<br>2.79<br>SSEEe|
|**S**<br>SSEEe|0.045<br>SSEEe|0.055<br>SSEEe|1.15<br>SSEEe|1.39<br>SSEEe|
|**S**<br>**T**<br>SSEEe|0.045<br>0.235<br>SSEEe|0.055<br>0.255<br>SSEEe|1.15<br>5.97<br>SSEEe|1.39<br>6.47<br>SSEEe|
|**U**<br>SSEEe|0.000<br>SSEEe|0.050<br>SSEEe|0.00<br>SSEEe|1.27<br>SSEEe|
|**V**<br>SSEEe|0.045<br>SSEEe|---<br>SSEEe|1.15<br>SSEEe|---<br>SSEEe|
|**Z**<br>SSEEe|---<br>SSEEe|0.080<br>SSEEe|---<br>SSEEe|2.04<br>SSEEe|



STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 

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**BD809/D** 

**4**