BD682S.

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## **-** Plastic Medium Power Silicon PNP Darlingtons 

## BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG 

This series of plastic, medium-power silicon PNP Darlington transistors can be used as output devices in complementary general-purpose amplifier applications. 

## **4.0 AMP DARLINGTON POWER TRANSISTORS PNP SILICON 45, 60, 80, 100 VOLT, 40 WATT** 

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COLLECTOR 2, 4<br>BASE 3<br>EMITTER 1<br>**----- End of picture text -----**<br>


## **Features** 

- High DC Current Gain 

- Monolithic Construction 

- BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 

- BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 

- These Devices are Pb-Free and are RoHS Compliant* 

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TO−225<br>CASE 77−09<br>STYLE 1<br>1<br>2 3<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** 

**Rating Symbol Value Unit** Collector-Emitter Voltage VCEO Vdc BD676G, BD676AG 45 BD678G, BD678AG 60 BD680G, BD680AG 80 BD682G, BD682TG 100 Collector-Base Voltage VCB Vdc BD676G, BD676AG 45 BD678G, BD678AG 60 BD680G, BD680AG 80 BD682G, BD682TG 100 Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 0.1 Adc Total Device Dissipation PD @ TC = 25 C 40 W Derate above 25 C 0.32 W/C Operating and Storage Junction TJ, Tstg −55 to +150 C Temperature Range ~~an~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **MARKING DIAGRAMS** 

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YWW YWW<br>BD6xxG BD6xxAG<br>Y = Year<br>WW = Work Week<br>BD6xx = Device Code<br>xx = 76, 78, 80, 82, or 82T<br>G = Pb-Free Package<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 3 of this data sheet. 

NOTE: Some of the devices on this data sheet have been **DISCONTINUED** . Please refer to the table on page 3. 

## **THERMAL CHARACTERISTICS** 

|**Characteristic**<br>**Symbol**<br>**Max**<br>**Unit**<br>Thermal Resistance,<br>Junction-to-Case<br>R JC<br>3.13<br>C/W<br>*For additional information on our Pb-Free strategy and soldering details, please<br>~~es~~<br>~~es ee~~<br>~~CT~~<br>t™té‘“—‘~wSC*@CE:C(S$SSC||
|---|
|download the**onsemi**Soldering and Mounting Techniques Reference Manual,|
|SOLDERRM/D<br>.|



Publication Order Number: **BD676/D** 

 Semiconductor Components Industries, LLC, 2013 **November, 2024 − Rev. 15** 

## **BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG** 

|**ELECTRICAL CHARACTERISTICS**(TC= 25C unless otherwise noted)<br>**Characteristic**<br>**Symbol**<br>**Min**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~a~~<br>~~a~~|**ELECTRICAL CHARACTERISTICS**(TC= 25C unless otherwise noted)<br>**Characteristic**<br>**Symbol**<br>**Min**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~a~~<br>~~a~~|**ELECTRICAL CHARACTERISTICS**(TC= 25C unless otherwise noted)<br>**Characteristic**<br>**Symbol**<br>**Min**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~a~~<br>~~a~~|**ELECTRICAL CHARACTERISTICS**(TC= 25C unless otherwise noted)<br>**Characteristic**<br>**Symbol**<br>**Min**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~a~~<br>~~a~~|**ELECTRICAL CHARACTERISTICS**(TC= 25C unless otherwise noted)<br>**Characteristic**<br>**Symbol**<br>**Min**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~a~~<br>~~a~~|
|---|---|---|---|---|
|Collector-Emitter Breakdown Voltage (Note 1)|BVCEO|||Vdc|
|(IC= 50 mAdc, IB= 0)|||||
|BD676G, BD676AG||45|−||
|BD678G, BD678AG||60|−||
|BD680G, BD680AG||80|−||
|BD682G, BD682TG||100|−||
|Collector Cutoff Current|ICEO|||Adc|
|(VCE= Half Rated VCEO, IB= 0)||−|500||
|Collector Cutoff Current|ICBO|||mAdc|
|(VCB= Rated BVCEO, IE= 0)||−|0.2||
|(VCB= Rated BVCEO. IE= 0, TC= 100C)||−|2.0||
|Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>IEBO<br>−<br>2.0<br>mAdc<br>~~ee~~<br>~~ee ee ee~~<br>~~ee~~|||||
|**ON CHARACTERISTICS**|||||
|DC Current Gain (Note 1)|hFE|||−|
|(IC= 1.5 Adc, VCE= 3.0 Vdc)|||||
|BD676G, BD678G, BD680G, BD682G||750|−||
|(IC= 2.0 Adc, VCE= 3.0 Vdc)|||||
|BD676AG, BD678AG, BD680AG||750|−||
|Collector-Emitter Saturation Voltage (Note 1)<br>(IC= 1.5 Adc, IB= 30 mAdc)|VCE(sat)|||Vdc|
|BD678G, BD680G, BD682G||−|2.5||
|(IC= 2.0 Adc, IB= 40 mAdc)|||||
|BD676AG, BD678AG, BD680AG||−|2.8||
|Base-Emitter On Voltage (Note 1)<br>(IC= 1.5 Adc, VCE= 3.0 Vdc)|VBE(on)|||Vdc|
|BD678G, BD680G, BD682G||−|2.5||
|(IC= 2.0 Adc, VCE= 3.0 Vdc)|||||
|BD676AG, BD678AG, BD680AG||−|2.5||
|**DYNAMIC CHARACTERISTICS**|||||
|Small-Signal Current Gain|hfe|||−|
|(IC= 1.5 Adc, VCE= 3.0 Vdc, f = 1.0 MHz)||1.0|−||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle  2.0%. 

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50 5.0<br>ee<br>45<br>40 2.0<br>35 oe e ee eee e<br>1.0<br>SSRECEREE<br>30 SS LLL<br>BONDING WIRE LIMIT<br>25 0.5 THERMAL LIMIT at TC = 25   C<br>SECONDARY BREAKDOWN LIMIT<br>20 P EENETNEEL S S NN\Nen<br>15 0.2<br>BD676, 676A<br>10 ee 0.1 n TC = 25   s C BD678, 678A WU<br>5.0 BD680, 680A<br>BD682<br>0 FAS 0.05 La w a<br>15 30 45 60 75 90 105 120 135 150 165 1.0 2.0 5.0 10 20 50 100<br>TC, CASE TEMPERATURE (  C) VCE, COLLECTOR‐EMITTER VOLTAGE (VOLTS)<br>PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>


**Figure 1. Power Temperature Derating** 

**Figure 2. DC Safe Operating Area** 

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## **BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG** 

There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. 

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 

|||PNP||||||||COLLECTOR|COLLECTOR|COLLECTOR|COLLECTOR|COLLECTOR||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||BASE<br>BD676G, BD676AG<br>BD678G, BD678AG<br>BD680G, BD680AG<br>BD682G, BD682TG<br>8.0 k<br>120<br>~~“4~~|||||||||||||||
||||||||||||EMITTER|||||
||**Figure 3. Darlington Circuit Schematic**|||||**Figure 3. Darlington Circuit Schematic**||||||||||
||**ORDERING INFORMATION**|||||||||||||||
|**Device**<br>**Package**<br>**Shipping**<br>BD682G<br>TO-225<br>(Pb-Free)<br>500 Units / Box<br>~~ee~~||||||||||||||||
||**DISCONTINUED**(Note 2)|||||||||||||||
||BD676G|||TO-225|||||||||||500 Units / Box|
||||(Pb-Free)|||||||||||||
||BD676AG|||TO-225|||||||||||500 Units / Box|
||||(Pb-Free)|||||||||||||
||BD678G|||TO-225|||||||||||500 Units / Box|
||||(Pb-Free)|||||||||||||
||BD678AG|||TO-225|||||||||||500 Units / Box|
||||(Pb-Free)|||||||||||||
||BD680G|||TO-225|||||||||||500 Units / Box|
||||(Pb-Free)|||||||||||||
||BD680AG|||TO-225|||||||||||500 Units / Box|
||||(Pb-Free)|||||||||||||
||BD682TG|||TO-225|||||||||||50 Units / Rail|
||||(Pb-Free)|||||||||||||



2. **DISCONTINUED:** These devices are not recommended for new design. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com. 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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TO−225<br>CASE 77−09<br>ISSUE AD<br>**----- End of picture text -----**<br>


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4 ISSUE AD<br>DATE 25 MAR 2015<br>1 3<br>2 3 2 1<br>FRONT VIEW BACK VIEW<br>SCALE 1:1<br>E NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>A1 ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.<br>PIN 4 MILLIMETERS<br>BACKSIDE TAB DIM MIN MAX<br>A 2.40 3.00<br>A1 1.00 1.50<br>b 0.60 0.90<br>D b2 0.51 0.88<br>P c 0.39 0.63<br>D 10.60 11.10<br>E 7.40 7.80<br>1 2 3<br>e 2.04 2.54<br>L 14.50 16.63<br>L1 1.27 2.54<br>P 2.90 3.30<br>L1 Q 3.80 4.20<br>GENERIC<br>L<br>MARKING DIAGRAM*<br>YWW<br>XX<br>XXXXXG<br>2X b2 Y = Year<br>WW = Work Week<br>2X e XXXXX = Device Code<br>b c G = Pb−Free Package<br>FRONT VIEW SIDE VIEW *This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ � ”, may<br>or may not be present. Some products may<br>not follow the Generic Marking.<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. EMITTER PIN 1. CATHODE PIN 1. BASE PIN 1. ANODE 1 PIN 1. MT 1<br>2., 4. COLLECTOR 2., 4. ANODE 2., 4. COLLECTOR 2., 4. ANODE 2 2., 4. MT 2<br>3. BASE 3. GATE 3. EMITTER 3. GATE 3. GATE<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:<br>PIN 1. CATHODE PIN 1. MT 1 PIN 1. SOURCE PIN 1. GATE PIN 1. SOURCE<br>2., 4. GATE 2., 4. GATE 2., 4. GATE 2., 4. DRAIN 2., 4. DRAIN<br>3. ANODE 3. MT 2 3. DRAIN 3. SOURCE 3. GATE<br>**----- End of picture text -----**<br>


DATE 25 MAR 2015 

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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42049B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−225 PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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