BD435G.

## BD435G, BD437G, BD439G, BD441G 

## Plastic Medium-Power Silicon NPN Transistors 

This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. 

## **Features** 

- Complementary Types are BD438 and BD442 

- These Devices are Pb−Free and are RoHS Compliant* 

## **http://onsemi.com** 

## **4.0 AMPERES POWER TRANSISTORS NPN SILICON** 

**MAXIMUM RATINGS** 

COLLECTOR 2, 4 **Rating Symbol Value Unit** Collector−Emitter Voltage VCEO Vdc BASE 3 BD435G 32 BD437G 45 BD439G 60 BD441G 80 EMITTER 1 Collector−Base Voltage VCBO Vdc BD435G 32 BD437G 45 BD439G 60 BD441G 80 **TO−225** Emitter−Base Voltage VEBO 5.0 Vdc **CASE 77−09 STYLE 1** Collector Current IC 4.0 Adc Base Current IB 1.0 Adc 1 2 3 Total Device Dissipation PD @ TDerate above 25C = 25 ° C ° C 28836 W/W ° C **MARKING DIAGRAM** Operating and Storage Junction TJ, Tstg –55 to +150 ° C Temperature Range YWW ~~a 6~~ BD4xxG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y = Year WW = Work Week **THERMAL CHARACTERISTICS** BD4xx = Device Code **Characteristic Symbol Max Unit** xx = 35, 37, 37T, 39, 41 ° G = Pb−Free Package 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance, Junction−to−Case|R JC|3.5|°C/W|



**ORDERING INFORMATION Device Package Shipping** BD435G TO−225 500 Units/Box (Pb−Free) BD437G TO−225 500 Units/Box (Pb−Free) BD437TG TO−225 50 Units/Rail (Pb−Free) BD439G TO−225 500 Units/Box (Pb−Free) *For additional information on our Pb−Free strategy  and soldering details, please BD441G TO−225 500 Units/Box download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free) Reference Manual, SOLDERRM/D. ~~ab~~ 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2013 **December, 2013 − Rev. 17** 

**BD437/D** 

**BD435G, BD437G, BD439G, BD441G** 

|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Collector−Emitter Breakdown Voltage<br>(IC= 100 mA, IB= 0)<br>BD435G<br>BD437G<br>BD439G<br>BD441G|V(BR)CEO|32<br>45<br>60<br>80|−<br>−<br>−<br>−|−<br>−<br>−<br>−|Vdc|
|Collector−Base Breakdown Voltage<br>(IC= 100�A, IB= 0)<br>BD435G<br>BD437G<br>BD439G<br>BD441G|V(BR)CBO|32<br>45<br>60<br>80|−<br>−<br>−<br>−|−<br>−<br>−<br>−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= 100�A, IC= 0)|V(BR)EBO|5.0|−|−|Vdc|
|Collector Cutoff Current<br>(VCB= 32 V, IE= 0)<br>BD435G<br>(VCB= 45 V, IE= 0)<br>BD437G<br>(VCB= 60 V, IE= 0)<br>BD439G<br>(VCB= 80 V, IE= 0)<br>BD441G|ICBO|−<br>−<br>−<br>−|−<br>−<br>−<br>−|0.1<br>0.1<br>0.1<br>0.1|mAdc|
|Emitter Cutoff Current<br>(VEB= 5.0 V)|IEBO|−|−|1.0|mAdc|
|DC Current Gain<br>(IC= 10 mA, VCE= 5.0 V)<br>BD435G<br>BD437G<br>BD439G<br>BD441G|hFE|40<br>30<br>20<br>15|−<br>−<br>−<br>−|−<br>−<br>−<br>−|−|
|DC Current Gain<br>(IC= 500 mA, VCE= 1.0 V)<br>BD435G<br>BD437G<br>BD439G, BD441G|hFE|85<br>85<br>40|−<br>−<br>−|475<br>375<br>475|−|
|DC Current Gain<br>(IC= 2.0 A, VCE= 1.0 V)<br>BD435G<br>BD437G<br>BD439G<br>BD441G|hFE|50<br>40<br>25<br>15|−<br>−<br>−<br>−|−<br>−<br>−<br>−|−|
|Collector Saturation Voltage<br>(IC= 2.0 A, IB= 0.2 V)<br>BD435G<br>(IC= 3.0 A, IB= 0.3 A)<br>BD437G, BD439G, BD441G|VCE(sat)|−<br>−|−<br>−|0.5<br>0.8|Vdc|
|Base−Emitter On Voltage<br>(IC= 2.0 A, VCE= 1.0 V)|VBE(on)|−|−|1.1|Vdc|
|Current−Gain − Bandwidth Product<br>(VCE= 1.0 V, IC= 250 mA, f = 1.0 MHz)|fT|3.0|−|−|MHz|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**http://onsemi.com 2** 

**BD435G, BD437G, BD439G, BD441G** 

**==> picture [484 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0<br>1.6<br>IC = 10 A 100 mA 1.0 A 3.0 A<br>1.2<br>0.8<br>TJ = 25 ° C<br>0.4<br>00.05 0.070.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500<br>IB, BASE CURRENT (mA)<br>VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 1. Collector Saturation Region** 

**==> picture [490 x 392] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>180<br>BD433, 435, 437<br>160<br>140<br>120 BD439, 441<br>100<br>80<br>60<br>40<br>20<br>0<br>0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5<br>IC, COLLECTOR CURRENT (AMP)<br>Figure 2. Current Gain<br>2.0 10<br>TJ = 25 ° C<br>1.6 4.0 5 ms<br>1.2 TJ = 150 ° C dc<br>1.0 SECONDARY BREAKDOWN<br>0.8 VBE(sat) @ IC/IB = 10 THERMAL LIMIT TC = 25°C<br>VBE @ VCE = 2.0 V 0.5 BONDING WIRE LIMIT<br>CURVES APPLY BELOW RATED VCEO<br>0.6 BD437<br>VCE(sat) @ IC/IB = 10 BD439<br>BD441<br>0 0.1<br>0.0050.01 0.02 0.030.05 0.1 0.20.3 0.5 1.0 2.0 3.0 4.0 1.0 2.0 5.0 10 20 50 100<br>IC, COLLECTOR CURRENT (AMP) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)<br>hFE, CURRENT GAIN (NORMALIZED)<br>VOLTAGE (VOLTS)<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>


**Figure 3. “On” Voltage** 

**Figure 4. Active Region Safe Operating Area** 

**http://onsemi.com** 

**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [472 x 503] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO−225<br>CASE 77−09<br>4 ISSUE AD<br>DATE 25 MAR 2015<br>1 3<br>2 3 2 1<br>FRONT VIEW BACK VIEW<br>SCALE 1:1<br>E NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>A1 ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.<br>a<br>PIN 4 MILLIMETERS<br>BACKSIDE TAB DIM MIN MAX<br>A 2.40 3.00<br>A1 1.00 1.50<br>b 0.60 0.90<br>D b2 0.51 0.88<br>P c 0.39 0.63<br>D 10.60 11.10<br>E 7.40 7.80<br>1 2 3<br>a t e 2.04 2.54<br>L 14.50 16.63<br>Jt L1 1.27 2.54<br>P 2.90 3.30<br>L1 Q 3.80 4.20<br>GENERIC<br>L<br>MARKING DIAGRAM*<br>YWW<br>XX<br>XXXXXG<br>2X b2 Y = Year<br>WW = Work Week<br>2X e XXXXX = Device Code<br>b c G = Pb−Free Package<br>*This information is generic. Please refer to<br>FRONT VIEW SIDE VIEW<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present.<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. EMITTER PIN 1. CATHODE PIN 1. BASE PIN 1. ANODE 1 PIN 1. MT 1<br>2., 4. COLLECTOR 2., 4. ANODE 2., 4. COLLECTOR 2., 4. ANODE 2 2., 4. MT 2<br>3. BASE 3. GATE 3. EMITTER 3. GATE 3. GATE<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:<br>PIN 1. CATHODE PIN 1. MT 1 PIN 1. SOURCE PIN 1. GATE PIN 1. SOURCE<br>2., 4. GATE 2., 4. GATE 2., 4. GATE 2., 4. DRAIN 2., 4. DRAIN<br>3. ANODE 3. MT 2 3. DRAIN 3. SOURCE 3. GATE<br>**----- End of picture text -----**<br>


DATE 25 MAR 2015 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42049B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−225 PAGE 1 OF 1** ~~re~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website:** www.onsemi.com Phone: 011 421 33 790 2910 

◊ 

**www.onsemi.com** 

**Europe, Middle East and Africa Technical Support:** Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative 

**1**