BD244CTU

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## Complementary Silicon Plastic Power Transistors 

## BD243B, BD243C (NPN), BD244B, BD244C (PNP) 

These devices are designed for use in general purpose amplifier and switching applications. 

## **Features** 

- High Current Gain Bandwidth Product 

- These Devices are Pb−Free and are RoHS Compliant* 

## **MAXIMUM RATINGS** 

|**Rating**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Collector−Emitter Voltage<br>BD243B, BD244B<br>BD243C, BD244C|VCEO|80<br>100|Vdc|
|Collector−Base Voltage<br>BD243B, BD244B<br>BD243C, BD244C|VCB|80<br>100|Vdc|
|Emitter−Base Voltage|VEB|5.0|Vdc|
|Collector Current − Continuous|IC|6|Adc|
|Collector Current − Peak|ICM|10|Adc|
|Base Current|IB|2.0|Adc|
|Total Device Dissipation<br>@ TC= 25°C<br>Derate above 25°C|PD|65<br>0.52|W<br>W/°C|
|Operating and Storage Junction<br>Temperature Range|TJ, Tstg|−65 to +150|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS 65 WATTS** 

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PNP NPN<br>COLLECTOR 2, 4 COLLECTOR 2, 4<br>1 1<br>BASE BASE<br>EMITTER 3 EMITTER 3<br>**----- End of picture text -----**<br>


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4<br>TO−220<br>CASE 221A<br>STYLE 1<br>1 2<br>3<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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BD24xy = Device Code<br>x = 3 or 4<br>y = B or C<br>BD24xyG<br>A = Assembly Location<br>AY   WW Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


## **THERMAL CHARACTERISTICS** 

|**Characteristics**|**Symbol**|**Max**|**Unit**|
|---|---|---|---|
|Thermal Resistance, Junction−to−Case|R JC|1.92|°C/W|



**ORDERING INFORMATION** 

**Device Package Shipping** BD243CG TO−220 50 Units / Rail (Pb−Free) BD244BG TO−220 50 Units / Rail (Pb−Free) BD244CG TO−220 50 Units / Rail (Pb−Free) ~~a~~ 

> *For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **BD243B/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **April, 2024 − Rev. 16** 

**BD243B, BD243C (NPN), BD244B, BD244C (PNP)** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC = 25C = 25= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Collector−Emitter Sustaining Voltage (Note 1)<br>(IC= 30 mAdc, IB= 0)|VCEO(sus)|||Vdc|
|BD243B, BD244B||80|−||
|BD243C, BD244C||100|−||
|Collector Cutoff Current|ICEO|||mAdc|
|(VCE= 60 Vdc, IB= 0)|||||
|BD243B, BD243C, BD244B, BD244C||−|0.7||
|Collector Cutoff Current|ICES|||Adc|
|(VCE= 80 Vdc, VEB= 0)|||||
|BD243B, BD244B||−|400||
|(VCE= 100 Vdc, VEB= 0)|||||
|BD243C, BD244C||−|400||
|Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>IEBO<br>−<br>1.0<br>mAdc<br>**ON CHARACTERISTICS**(Note 1)<br>~~es~~<br>~~es es~~|||||
|DC Current Gain|hFE|||−|
|(IC= 0.3 Adc, VCE= 4.0 Vdc)||30|−||
|(IC= 3.0 Adc, VCE= 4.0 Vdc)||15|−||
|Collector−Emitter Saturation Voltage<br>(IC= 6.0 Adc, IB= 1.0 Adc)|VCE(sat)|−|1.5|Vdc|
|Base−Emitter On Voltage<br>(IC= 6.0 Adc, VCE= 4.0 Vdc)|VBE(on)|−|2.0|Vdc|
|**DYNAMIC CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product (Note 2)|fT|||MHz|
|(IC= 500 mAdc, VCE= 10 Vdc, ftest= 1.0 MHz)||3.0|−||
|Small−Signal Current Gain|hfe|||−|
|(IC= 0.5 Adc, VCE= 10 Vdc, f = 1.0 kHz)||20|−||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulsewidth ≤ 300 s, Duty Cycle ≤ 2.0%. 2. fT = hfe • ftest 

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80<br>PT TTT TTT<br>60 a<br>ONEE<br>PP<br>40 NEE<br>PNET<br>PAE<br>20 PP<br>PEEP P rresxT<br>0<br>0 20 40 60 80 100 120 140 160<br>TC, CASE TEMPERATURE (°C)<br>PD, POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br>


**Figure 1. Power Derating** 

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**BD243B, BD243C (NPN), BD244B, BD244C (PNP)** 

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VCC 2.0 PTT<br>- 30 V 1.0 {iy tT TJ = 25°C Lt<br>+ 11 V a lo 25 s w RC 0.70.5 oeRNSee IVCCC/IB = 30 V = 10 ==a<br>SCOPE a ee ee ee ee ee ee ee ee e<br>0 oe RB o 0.3 TiS SR eee<br>0.2 tr<br>i ee See<br>- 9.0 V 2 CN SS ee<br>51 D1<br>> 0.1 (ITPAL<br>DUTY CYCLE = 1.0%tr, tf <  10 ns +~ - 4 V +- 0.050.07 FHSBepfEe eeee eeeee eeeee.ee, “2 td @ VBE(off) Ty  = 5.0 V | Ee[[ ||<br>RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS Dn<br>0.03<br>D1 MUST BE FAST RECOVERY TYPE eg.<br>0.02<br>1N5825 USED ABOVE! B =  100 mA 0.06 PELE 0.1 SET 0.2 CE TTT 0.4 0.6 1.0 CE ET 2.0 4.0 6.0<br>MSD6100USED BELOW! B =  100 mA IC, COLLECTOR CURRENT (AMP)<br>Figure 2. Switching Time Test Circuit Figure 3. Turn−On Time<br>1.0 [EEE EEE oo EEE oo ae I<br>0.7 D = 0.5 a ee OO Se ce ee<br>0.5 eeeTTa<br>a ree<br>a a a a a 0 eee eee<br>0.3<br>7BRE 0.2 ee ecs eeeee ee eeeea eseeeee a OO 0eeeee ee<br>0.2 rr ee a sc a aeee<br>0.1<br>0.1 a 0.05 ee P(pk) R JC(max) = 1.92°C/W il<br>0.07 | 0.02 es ee ee eee D CURVES APPLY FOR POWER fina<br>0.05 -——a oea6_ ee eee ee eee | | | | | PULSE TRAIN SHOWN 0 inniniHH<br>0.030.02 ee.rTSS 0.01 Oe SINGLE PULSE re eeeee eee . t 1 <—_ t 2 _,| SINGLE PULSE T READ TIME AT J(pk)  - T C  = P (pk)t1  R JC(t) iilillil<br>==_ FCO eee e  eeeo DUTY CYCLE, D = t 1 /t 2 8 lil in<br>ee eel<br>0.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000<br>t, TIME OR PULSE WIDTH (ms)<br>Figure 4. Thermal Response<br>10<br>SS There are two limitations on the power handling ability of<br>5.0 a ee 0.5 ms a transistor: average junction temperature and second<br>3.0 P S S breakdown. Safe operating area curves indicate IC − VC − V− VCE<br>1.0 limits of the transistor that must be observed for reliable<br>2.0 ms<br>oo TJ = 150°C P| dPSO SN E N Y 5.0 ms ENN operation, i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.dissipation than the curves indicate.<br>1.0 SECOND BREAKDOWN LIMITEDBONDING WIRE LIMITED NNYA N E NH The data of Figure 5 is based on TJ(pk) = 150°C: TCJ(pk) = 150°C: TC = 150°C: TC°C: TCC: TCC is<br>0.5 THERMAL LIMITATION @ TC = 25°C PNETNf TINGTO N variable depending on conditions. Second breakdown pulse<br>0.3 CURVES APPLY BELOW RATED VCEO | e X ≤limits are valid for duty cycles to 10% provided T 150°C, TJ(pk) may be calculated from the data in Figure 4.J(pk)limits are valid for duty cycles to 10% provided T 150°C, TJ(pk) may be calculated from the data in Figure 4.J(pk) 150°C, TJ(pk) may be calculated from the data in Figure 4.J(pk)°C, TJ(pk) may be calculated from the data in Figure 4.J(pk)C, TJ(pk) may be calculated from the data in Figure 4.J(pk)J(pk) may be calculated from the data in Figure 4.J(pk) may be calculated from the data in Figure 4.J(pk)J(pk)<br>0.2 P| | |NXE At high case temperatures, thermal limitations will reduce<br>Pt titetT ey BD243B, BD244B mmaNI—++1<br>BD243C, BD244C the power that can be handled to values less than the<br>0.15.0 Fi tilt 10 | 20 40 60 EeEre 80 1 100 5 limitations imposed by second breakdown.<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>r(t) EFFECTIVE TRANSIENT<br>THERMAL RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>


There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VC − V− VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.dissipation than the curves indicate. 

The data of Figure 5 is based on TJ(pk) = 150°C: TCJ(pk) = 150°C: TC = 150°C: TC°C: TCC: TCC is variable depending on conditions. Second breakdown pulse ≤limits are valid for duty cycles to 10% provided T 150°C, TJ(pk) may be calculated from the data in Figure 4.J(pk)limits are valid for duty cycles to 10% provided T 150°C, TJ(pk) may be calculated from the data in Figure 4.J(pk) 150°C, TJ(pk) may be calculated from the data in Figure 4.J(pk)°C, TJ(pk) may be calculated from the data in Figure 4.J(pk)C, TJ(pk) may be calculated from the data in Figure 4.J(pk)J(pk) may be calculated from the data in Figure 4.J(pk) may be calculated from the data in Figure 4.J(pk)J(pk) At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

**Figure 5. Active Region Safe Operating Area** 

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**BD243B, BD243C (NPN), BD244B, BD244C (PNP)** 

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5.0 ee ee eee | | 300<br>3.0 TJ = 25°C TJ = 25°C<br>2.0 HSie VCC = 30 V | | 200 I E<br>ts IC/IB = 10<br>1.0 po Prt | | dt} | IB1 = IB2 H EEat Cib PE Ey<br>0.7<br>0.5 100<br>e 0.3 COPS oS 70 a<br>0.2 Pii]} | BAY ETT Pt TS TTT HET Cob ee<br>tf<br>50<br>0.1 a,  Cs<br>0.070.05 ee ee 30 TH E E ET<br>0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 0.5 1.0 2.0 3.0 5.0 10 20 30 50<br>IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 6. Turn-Off Time Figure 7. Capacitance<br>500 ee eee 2.0<br>300 VCE = 2.0 V TJ = 25°C<br>200 oe TJ = 150°C pf fet)<br>a.  RII | 1.6 PEE I<br>100 IC = 1.0 A 2.5 A 5.0 A<br>70 0 25°C 1.2 HH<br>OG<br>50 Pitty hyTT<br>30 20 TT OFAN TT 0.8<br>20 °C NG PUTT TT<br>10 IN 0.4 2<br>7.0<br>=o 2 ae pA |ee<br>5.0 a 0 PRR SS<br>0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 4.0 6.0 10 20 30 50 100 200 300 500 1000<br>IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)<br>Figure 8. DC Current Gain Figure 9. Collector Saturation Region<br>2.0<br>Fe TJ = 25°C 2.5 *APPLIES FOR IC/IB ≤ 5.0<br>1.6 Hil PTHHH v0 AH R<br>HH EE E e Hi | | | Le<br>VBE(sat) @ IC/IB EL  = 10 | vt HH tt + 25 TT} °C to + 150°C<br>1.2 ||eeHit tt | TA 05 0 * VC FOR VCE(sat) ee |<br>Pi VBE @ VCE = 4.0 V e - 55°C to + 25 at °C |<br>0.8<br>TEeer TC<br>as + 25°C to + 150°C<br>0.4 il VCE(sat) @ IC/IB = 10 a| | TP e TY,FSSeel VB [ FOR V] BE yp - 55 er °C to + 25  FEE °C |<br>0 Poe PO i:<br>0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 3.0 4.0 6.0 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.4 0.6<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)<br>CAPACITANCE (pF)<br>hFE, DC CURRENT GAIN<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>C)°<br>V, VOLTAGE (VOLTS)<br>V, TEMPERATURE COEFFICIENTS (mV/<br>θ<br>**----- End of picture text -----**<br>


**Figure 10. “On” Voltages** 

**Figure 11. Temperature Coefficients** 

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**BD243B, BD243C (NPN), BD244B, BD244C (PNP)** 

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10 [3] 10 [M]<br>V CE  = 30 V VCE = 30 V<br>10 [2]<br>a_ —= || TJ = 150 ° C fi _—— [7 | fF [| 1.0 [M] PDPaAPENI™N I IC = 10 x ICES |es| | ft |<br>a 10 [1] SF 100°C fF 100 [k] PP NNN IC = 2 x ICES [I]<br>25°C<br>i 10 [0] ee ey oe oo a<br>xc SS SS SS SS 10 [k] | | | IC ≈ ICES Nn Ye eee<br>8 10 [-1] IC = ICES es a 7 A a a a<br>10 REVERSE FORWARD 1.0 [k]<br>286-2 (TYPICAL ICES VALUES<br>eea | | J — OBTAINED FROM FIGURE 12) SaSsee<br>10 -3EL_[ JT TT tT | ft 0.1 [k] P| {|tT ftT fttT ftft ft<br>-0.3-0.2 -04 0 +01 +0.2 +03 +04 +05 +0.6 +07 20 40 60 80 100 120 140 160<br>VBE, BASE‐EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)<br>IC<br>RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)<br>**----- End of picture text -----**<br>


**Figure 12. Collector Cut-Off Region** 

**Figure 13. Effects of Base−Emitter Resistance** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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TO−220−3 10.10x15.12x4.45, 2.54P<br>CASE 221A<br>ISSUE AL<br>DATE 05 FEB 2025<br>**----- End of picture text -----**<br>


|STYLE 1:||STYLE 2:|||STYLE 3:||STYLE 4:|||
|---|---|---|---|---|---|---|---|---|---|
|PIN 1.|BASE|PIN 1.|BASE||PIN 1.|CATHODE|PIN 1.|MAIN TERMINAL 1||
|2.|COLLECTOR|2.|EMITTER||2.|ANODE|2.|MAIN TERMINAL 2||
|3.|EMITTER|3.|COLLECTOR||3.|GATE|3.|GATE||
|4.|COLLECTOR|4.|EMITTER||4.|ANODE|4.|MAIN TERMINAL 2||
|STYLE 5:||STYLE 6:|||STYLE 7:||STYLE 8:|||
|PIN 1.|GATE|PIN 1.|ANODE||PIN 1.|CATHODE|PIN 1.|CATHODE||
|2.|DRAIN|2.|CATHODE||2.|ANODE|2.|ANODE||
|3.|SOURCE|3.|ANODE||3.|CATHODE|3.|EXTERNAL TRIP/DELAY||
|4.|DRAIN|4.|CATHODE||4.|ANODE|4.|ANODE||
|STYLE 9:||STYLE 10:|||STYLE 11:||STYLE 12:|||
|PIN 1.|GATE|PIN 1.|GATE||PIN 1.|DRAIN|PIN 1.|MAIN TERMINAL 1||
|2.|COLLECTOR|2.|SOURCE||2.|SOURCE|2.|MAIN TERMINAL 2||
|3.|EMITTER|3.|DRAIN||3.|GATE|3.|GATE||
|4.|COLLECTOR|4.|SOURCE||4.|SOURCE|4.|NOT CONNECTED||
|**DOCUMENT NUMBER:**|**98ASB42148B**|||Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.||||||
|**DESCRIPTION:**|**TO−220−3 10.10x15.12x4.45, 2.54P**||||||||**PAGE 1 OF 1**|



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