BD244CG

## BD243B, BD243C (NPN), BD244B, BD244C (PNP) 

## Complementary Silicon Plastic Power Transistors 

These devices are designed for use in general purpose amplifier and switching applications. 

## **Features** 

- High Current Gain Bandwidth Product 

- These Devices are Pb−Free and are RoHS Compliant* 

## **MAXIMUM RATINGS** 

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## **6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS 65 WATTS** 

|**Rating**|**Symbol**|**Value**|**Unit**||||||||
|---|---|---|---|---|---|---|---|---|---|---|
||||||**PNP**|||**NPN**|||
|Collector−Emitter Voltage<br>BD243B, BD244B|VCEO|80|Vdc|COLLECTOR 2, 4||||COLLECTOR 2, 4|||
|BD243C, BD244C<br>Collector−Base Voltage<br>BD243B, BD244B<br>BD243C, BD244C<br>Emitter−Base Voltage|VCB<br>VEB|100<br>80<br>100<br>5.0|Vdc<br>Vdc|1<br>BASE<br>EMITTER 3<br>~~6)~~||||1<br>BASE<br>EMITTER 3|||
|Collector Current − Continuous|IC|6|Adc||||||||
|Collector Current − Peak<br>Base Current<br>Total Device Dissipation<br>@ TC= 25°C<br>Derate above 25°C|ICM<br>IB<br>PD|10<br>2.0<br>65<br>0.52|Adc<br>Adc<br>W<br>W/°C||4<br>ry|||**TO−220**<br>**CASE 221A**<br>**STYLE 1**|||
|Operating and Storage Junction<br>Temperature Range|TJ, Tstg|−65 to +150|°C||1 2<br>3||||||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

|**THERMAL CHARACTERISTICS**<br>**Characteristics**<br>~~a~~|**Symbol**<br>~~en~~|**Max**|**Unit**|
|---|---|---|---|
|Thermal Resistance, Junction−to−Case|R JC|1.92|°C/W|



## **MARKING DIAGRAM** 

BD24xy = Device Code x = 3 or 4 ~~0 |~~ y = B or C BD24xyG A = Assembly Location AY   WW Y = Year WW = Work Week G = Pb−Free Package 

## **ORDERING INFORMATION** 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

|**Device**|**Package**|**Shipping**|
|---|---|---|
|BD243BG|TO−220<br>(Pb−Free)|50 Units / Rail|
|BD243CG|TO−220<br>(Pb−Free)|50 Units / Rail|
|BD244BG|TO−220<br>(Pb−Free)|50 Units / Rail|
|BD244CG|TO−220<br>(Pb−Free)|50 Units / Rail|



Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **November, 2014 − Rev. 15** 

**BD243B/D** 

## **BD243B, BD243C (NPN), BD244B, BD244C (PNP)** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Collector−Emitter Sustaining Voltage (Note 1)<br>(IC= 30 mAdc, IB= 0)<br>BD243B, BD244B<br>BD243C, BD244C|VCEO(sus)|80<br>100|−<br>−|Vdc|
|Collector Cutoff Current<br>(VCE= 60 Vdc, IB= 0)<br>BD243B, BD243C, BD244B, BD244C|ICEO|−|0.7|mAdc|
|Collector Cutoff Current<br>(VCE= 80 Vdc, VEB= 0)<br>BD243B, BD244B<br>(VCE= 100 Vdc, VEB= 0)<br>BD243C, BD244C|ICES|−<br>−|400<br>400|�Adc|
|Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)|IEBO|−|1.0|mAdc|
|**ON CHARACTERISTICS**(Note 1)|||||
|DC Current Gain<br>(IC= 0.3 Adc, VCE= 4.0 Vdc)<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)|hFE|30<br>15|−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 6.0 Adc, IB= 1.0 Adc)|VCE(sat)|−|1.5|Vdc|
|Base−Emitter On Voltage<br>(IC= 6.0 Adc, VCE= 4.0 Vdc)|VBE(on)|−|2.0|Vdc|
|**DYNAMIC CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product (Note 2)<br>(IC= 500 mAdc, VCE= 10 Vdc, ftest= 1.0 MHz)|fT|3.0|−|MHz|
|Small−Signal Current Gain<br>(IC= 0.5 Adc, VCE= 10 Vdc, f = 1.0 kHz)|hfe|20|−|−|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulsewidth ≤ 300 � s, Duty Cycle ≤ 2.0%. 2. fT = hfe • ftest 

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80<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140 160<br>TC, CASE TEMPERATURE (°C)<br>PD, POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br>


**Figure 1. Power Derating** 

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**2** 

**BD243B, BD243C (NPN), BD244B, BD244C (PNP)** 

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VCC 2.0<br>- 30 V 1.0 TJ = 25°C<br>+ 11 V 25 �s RC 0.70.5 IVCCC/IB = 30 V = 10<br>SCOPE<br>0 RB 0.3<br>0.2 tr<br>- 9.0 V<br>51 D1 0.1<br>DUTY CYCLE = 1.0%tr, tf � 10 ns - 4 V 0.07 td @ VBE(off) = 5.0 V<br>0.05<br>RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS<br>0.03<br>D1 MUST BE FAST RECOVERY TYPE eg.<br>0.02<br>�1N5825 USED ABOVE IB � 100 mA 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0<br>�MSD6100 USED BELOW IB � 100 mA IC, COLLECTOR CURRENT (AMP)<br>Figure 2. Switching Time Test Circuit Figure 3. Turn−On Time<br>1.0<br>0.7 D = 0.5<br>0.5<br>0.3<br>0.2<br>0.2<br>0.1<br>0.1 0.05 P(pk) R�JC(max) = 1.92°C/W<br>0.07 0.02 D CURVES APPLY FOR POWER<br>0.05 PULSE TRAIN SHOWN<br>0.030.02 0.01 SINGLE PULSE t 1 t 2 SINGLE PULSE T READ TIME AT J(pk)  - T C  = P (pk)t1  R� JC(t)<br>DUTY CYCLE, D = t 1 /t 2<br>0.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000<br>t, TIME OR PULSE WIDTH (ms)<br>Figure 4. Thermal Response<br>10 There are two limitations on the power handling ability of<br>5.0 0.5 ms a transistor: average junction temperature and second<br>3.0 breakdown. Safe operating area curves indicate IC − VC − V− VCE<br>1.0 limits of the transistor that must be observed for reliable<br>2.0 TJ = 150°C 5.0 msms operation, i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.dissipation than the curves indicate.<br>1.0 SECOND BREAKDOWN LIMITED The data of Figure 5 is based on TJ(pk) = 150°C: TCJ(pk) = 150°C: TC = 150°C: TC°C: TCC: TCC is<br>BONDING WIRE LIMITED<br>0.5 THERMAL LIMITATION @ TC = 25°C variable depending on conditions. Second breakdown pulse<br>0.3 CURVES APPLY BELOW RATED VCEO ≤limits are valid for duty cycles to 10% provided T 150°C, TJ(pk) may be calculated from the data in Figure 4.J(pk)limits are valid for duty cycles to 10% provided T 150°C, TJ(pk) may be calculated from the data in Figure 4.J(pk) 150°C, TJ(pk) may be calculated from the data in Figure 4.J(pk)°C, TJ(pk) may be calculated from the data in Figure 4.J(pk)C, TJ(pk) may be calculated from the data in Figure 4.J(pk)J(pk) may be calculated from the data in Figure 4.J(pk) may be calculated from the data in Figure 4.J(pk)J(pk)<br>0.2 At high case temperatures, thermal limitations will reduce<br>BD243B, BD244B<br>BD243C, BD244C the power that can be handled to values less than the<br>0.15.0 10 20 40 60 80 100 limitations imposed by second breakdown.<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>μ<br>t, TIME (��s)<br>r(t) EFFECTIVE TRANSIENT<br>THERMAL RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>


There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VC − V− VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.dissipation than the curves indicate. 

The data of Figure 5 is based on TJ(pk) = 150°C: TCJ(pk) = 150°C: TC = 150°C: TC°C: TCC: TCC is variable depending on conditions. Second breakdown pulse ≤limits are valid for duty cycles to 10% provided T 150°C, TJ(pk) may be calculated from the data in Figure 4.J(pk)limits are valid for duty cycles to 10% provided T 150°C, TJ(pk) may be calculated from the data in Figure 4.J(pk) 150°C, TJ(pk) may be calculated from the data in Figure 4.J(pk)°C, TJ(pk) may be calculated from the data in Figure 4.J(pk)C, TJ(pk) may be calculated from the data in Figure 4.J(pk)J(pk) may be calculated from the data in Figure 4.J(pk) may be calculated from the data in Figure 4.J(pk)J(pk) At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

**Figure 5. Active Region Safe Operating Area** 

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**3** 

**BD243B, BD243C (NPN), BD244B, BD244C (PNP)** 

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5.0 300<br>3.0 TJ = 25°C TJ = 25°C<br>2.0 VCC = 30 V 200<br>ts IC/IB = 10<br>1.0 IB1 = IB2 Cib<br>0.7<br>0.5 100<br>0.3 70<br>0.2 Cob<br>tf<br>50<br>0.1<br>0.07<br>0.05 30<br>0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 0.5 1.0 2.0 3.0 5.0 10 20 30 50<br>IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 6. Turn-Off Time Figure 7. Capacitance<br>500 2.0<br>300 VCE = 2.0 V TJ = 25°C<br>200 TJ = 150°C<br>1.6<br>100 IC = 1.0 A 2.5 A 5.0 A<br>70 25°C 1.2<br>50<br>30 0.8<br>20 -�55°C<br>10 0.4<br>7.0<br>5.0 0<br>0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 4.0 6.0 10 20 30 50 100 200 300 500 1000<br>IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)<br>Figure 8. DC Current Gain Figure 9. Collector Saturation Region<br>2.0 +�2.5<br>TJ = 25°C +�2.0 *APPLIES FOR IC/IB ≤ 5.0<br>1.6 +�1.5<br>+�1.0<br>VBE(sat) @ IC/IB = 10 + 25°C to + 150°C<br>1.2 +�0.5 *�VC FOR VCE(sat)<br>0<br>VBE @ VCE = 4.0 V - 55°C to + 25°C<br>0.8 -�0.5<br>-�1.0 + 25°C to + 150°C<br>0.4 VCE(sat) @ IC/IB = 10 -�1.5 �VB FOR VBE - 55°C to + 25°C<br>-�2.0<br>0 -�2.5<br>0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 3.0 4.0 6.0 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.4 0.6<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)<br>μ<br>t, TIME (��s)<br>CAPACITANCE (pF)<br>hFE, DC CURRENT GAIN<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>C)°<br>V, VOLTAGE (VOLTS)<br>V, TEMPERATURE COEFFICIENTS (mV/<br>θ<br>**----- End of picture text -----**<br>


**Figure 10. “On” Voltages** 

**Figure 11. Temperature Coefficients** 

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**4** 

**BD243B, BD243C (NPN), BD244B, BD244C (PNP)** 

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10 [3]<br>V CE  = 30 V<br>10 [2]<br>TJ = 150 ° C<br>10 [1] 100°C<br>25°C<br>10 [0]<br>10 [-1] IC = ICES<br>10 [-�2] REVERSE FORWARD<br>10 [-�3]<br>-�0.3 -�0.2 -�0.1 0 +�0.1 +�0.2 +�0.3 +�0.4 +�0.5 +�0.6 +�0.7<br>VBE, BASE‐EMITTER VOLTAGE (VOLTS)<br>μ<br>, COLLECTOR CURRENT (��A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 12. Collector Cut-Off Region** 

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10 [M]<br>VCE = 30 V<br>1.0 [M] IC = 10 x ICES<br>100 [k] IC = 2 x ICES<br>10 [k] IC ≈ ICES<br>1.0 [k]<br>(TYPICAL ICES VALUES<br>OBTAINED FROM FIGURE 12)<br>0.1 [k]<br>20 40 60 80 100 120 140 160<br>TJ, JUNCTION TEMPERATURE (°C)<br>RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)<br>**----- End of picture text -----**<br>


**Figure 13. Effects of Base−Emitter Resistance** 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A ISSUE AK 

DATE 13 JAN 2022 

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SCALE 1:1<br>**----- End of picture text -----**<br>


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STYLE 1: STYLE 2: STYLE 3: STYLE 4:<br>PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2<br>3. EMITTER 3. COLLECTOR 3. GATE 3. GATE<br>4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2<br>STYLE 5: STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br>2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY<br>4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12:<br>PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2<br>3. EMITTER 3. DRAIN 3. GATE 3. GATE<br>4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42148B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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