BD242B
Bipolar (BJT) Single Transistor, PNP, 80 V, 3 A, 40 W, TO-220, Through Hole
- Manufacturer: STMICROELECTRONICS
- Product type:
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:-; Power Dissipation Pd:40W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor C
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 40W
- Transistor Mounting: Through Hole
- Transistor Polarity: PNP
- Transition Frequency: -
- Transistor Case Style: TO-220
- DC Current Gain hFE Min: 10hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 3A
- Collector Emitter Voltage Max: 80V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.178 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## ky, SGS-THOMSON S| | MICROELECTRONICS ## BD241A/B/C BD242A/B/C ## COMPLEMENTARY SILICON POWER TRANSISTORS » SGS-THOMSON PREFERRED SALESTYPES ## DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A, BD242B and BD242C respectively. **==> picture [82 x 113] intentionally omitted <==** **----- Start of picture text -----**<br> O<br>N<br>: x<br>NY<br>,<br>3<br>7<br>TO-220<br>**----- End of picture text -----**<br> ## INTERNAL SCHEMATIC DIAGRAM **==> picture [180 x 93] intentionally omitted <==** **----- Start of picture text -----**<br> Co (2) Co (2)<br>B B<br>E90 (3) EO (3)<br>SCOB960 §co8s810<br>**----- End of picture text -----**<br> ## ABSOLUTE MAXIMUM RATINGS Symbol Parameter [NPN | BO241A | BD2416 | BD2MC_ Veen [PNP | BD242A | BD242B | BD242C | | Voeo **|Coll** ector-Emitter VoltageectorBase Voliage (Ree=1000) (Ils=0) |=| 70—S«|| So]| tof}STC SC=~<“—~*~s—‘“‘—‘—s—sC—Cs“‘“‘—*~S*s‘“‘;7CS”S*<S*é<‘i*rC‘CAC*’ Pls [BaseGurent = For PNP types voltage and current values are negative. October 1995 1/4 BD241 A/B/C/BD242A/B/C ## THERMAL DATA Rthj-case |[Thermal] Resistance Junction-case Max 3.13 °C/W Rthj-amb |Thermal Resistance Junction-ambient Max 62.5 °C/W ## ELECTRICAL CHARACTERISTICS ## (Tease = 25 °C unlessotherwise specified) **==> picture [447 x 235] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---| |IcES|Collector|Cut-off|Voce|=|rated|Vceo|0.2|mA| |Current|(Vee|=|0)| |IcEO|Collector|Cut-off|for|BD241A/BD242A|Vce|=30V|0.3|mA| |Current|(lp|=|0)|for|BD241B/BD242B|Vce|=|60|V|0.3|mA| |for|BD241C/BD242C|Vce|=60V|0.3|mA| |lEBO|Emitter|Cut-off|Current||Veg|=|5|V|1|mA| |(Ic|=|0)| |VcEo(sus)*||Collector-Emitter|lo|=30|mA| |Sustaining|Voltage|for|BD241A/BD242A|60|Vv| |for|BD241B/BD242B|80|Vv| |for|BD241C/BD242C|100|Vv| |VeceE\saty*||Collector-Emitter|Ic=3A|Ip=0.6A|1.2|Vv| |Saturation|Voltage| |hre*|DC|Current|Gain|Ilc=1A|VcE=4V|25| |Ic=3A|VcE=4V|10| |hfe|Small|Signal|Current|Ic=0.5A|VceE=10V|f=|1MHz| |Gain|Ic|=0.5A|Voce|=10V|f=1KHz| |*|Pulsed:|Pulse|duration|=|300|us,|duty|cycle|< 2%| |For|PNP|types|voltage and|current values|are|negative.| **----- End of picture text -----**<br> **==> picture [107 x 24] intentionally omitted <==** **----- Start of picture text -----**<br> ‘Th $GS-THOMSON -<br>s/f MICROELECTRONICS<br>**----- End of picture text -----**<br> 2/4 BD241 A/B/C/BD242A/B/C ## TO-220 MECHANICAL DATA **==> picture [458 x 626] intentionally omitted <==** **----- Start of picture text -----**<br> ee rere ee ee ee ee<br>eS ee nT<br>=<<br>a es-S ”<br>Se Xe<br>SD 2B rr<br>PoesrUT ost |sore | 08<br>Pore cD 7 SD<br>poe | te Eto ote |.<br>Poet | ts tts ote ng<br>Pore || [toot] ee To| t0.40 ee otee<br>Poetw ts |<br>SY<br>pois | es | [Ts] toe tt<br>Ss15.25 || 15.75 osoo ||o.620<br>x Se 2” Y=<br>7<br>DY a A<br>Ww<br><x 1 | | se<br>S) pit; i | °<br>-<br>Le<br>iL<br>Cs) =——<br>|<br>E=<br>PO11C<br>—__________ fagJ7 SGS-THOMSONwcrocectomes — 3/4<br>**----- End of picture text -----**<br> **==> picture [13 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> 3/4<br>**----- End of picture text -----**<br> BD241 A/B/C/BD242A/B/C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS- THOMSON Microelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical compaents in life supportdevices or systems without express written approval of SGS-THOMSON Microelectaics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectrorics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong- Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore- Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 OO IT MICROELECTRONICSSGS-THOMSON ——___———————
Updated at April 27, 2026
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