BD241CG

## BD241C (NPN), BD242B (PNP), BD242C (PNP) 

## Complementary Silicon Plastic Power Transistors 

## **www.onsemi.com** 

Designed for use in general purpose amplifier and switching applications. 

**POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS** 

## **Features** 

- High Current Gain − Bandwidth Product 

- Compact TO−220 AB Package 

- Epoxy Meets UL94 V−0 @ 0.125 in 

- These Devices are Pb−Free and are RoHS Compliant* 

|• These Devices are Pb−Free and are RoHS Compliant*<br>**40 WATTS**|• These Devices are Pb−Free and are RoHS Compliant*<br>**40 WATTS**|• These Devices are Pb−Free and are RoHS Compliant*<br>**40 WATTS**|• These Devices are Pb−Free and are RoHS Compliant*<br>**40 WATTS**|• These Devices are Pb−Free and are RoHS Compliant*<br>**40 WATTS**|• These Devices are Pb−Free and are RoHS Compliant*<br>**40 WATTS**|
|---|---|---|---|---|---|
|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎ<br>**MAXIMUM RATINGS**<br>**ÎÎÎÎÎÎÎÎÎ**<br>**Rating**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>**Symbol**<br>Î**Î**<br>**ÎÎ**<br>**BD242B**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>**BD241C**<br>**BD242C**<br>ÎÎ<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Voltage<br>**ÎÎÎÎ**<br>VCEO<br>**ÎÎ**<br>80<br>**ÎÎÎ**<br>100<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Voltage<br>**ÎÎÎÎ**<br>VCES<br>**ÎÎ**<br>90<br>**ÎÎÎ**<br>115<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎ**<br>Emitter−Base Voltage<br>**ÎÎÎÎ**<br>VEB<br>**ÎÎÎÎÎ**<br>5.0<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎ**<br>Collector Current −Continuous<br>**ÎÎÎÎ**<br>IC<br>**ÎÎÎÎÎ**<br>3.0<br>**ÎÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎ**<br>Collector Current − Peak<br>**ÎÎÎÎ**<br>ICM<br>**ÎÎÎÎÎ**<br>5.0<br>**ÎÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎ**<br>Base Current<br>**ÎÎÎÎ**<br>IB<br>**ÎÎÎÎÎ**<br>1.0<br>**ÎÎÎ**<br>Adc<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation<br>@ TC= 25°C<br>Derate above 25°C<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>PD<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>40<br>0.32<br>ÎÎÎ<br>**ÎÎÎ**<br>W<br>W/°C<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>Operating and Storage<br>Junction Temperature Range<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>TJ, Tstg<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>–65 to +150<br>ÎÎÎ<br>**ÎÎÎ**<br>°C<br>**ÎÎÎÎÎÎÎÎÎ**<br>ESD − Human Body Model<br>**ÎÎÎÎ**<br>HBM<br>**ÎÎÎÎÎ**<br>3B<br>**ÎÎÎ**<br>V<br>ÎÎÎÎÎÎÎÎÎ<br>ESD − Machine Model<br>ÎÎÎ**Î**<br>MM<br>ÎÎÎÎÎ<br>C<br>ÎÎÎ<br>V<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>**TO−220**<br>**CASE 221A**<br>**STYLE 1**<br>3<br>1<br>**40 WATTS**<br>2<br>**MARKING**<br>**DIAGRAM**<br>AYWW<br>BD24xxG<br>4<br>1<br>BASE<br>EMITTER 3<br>COLLECTOR 2,4<br>1<br>BASE<br>EMITTER 3<br>COLLECTOR 2,4<br>**COMPLEMENTARY**<br>~~ee~~<br>~~ee ee~~<br>~~Ss « ¢~~<br>~~[Pt~~<br>~~[l~~i @<br>~~o«~~<br>~~===)~~||||||
|device. If any of these limits are exceeded, device functionality should not be||BD24xx = Device Code||||
|assumed, damage may occur and reliability may be affected.<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎ<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>**Symbol**<br>Î**Î**<br>**ÎÎ**<br>**Max**<br>ÎÎ<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Ambient<br>**Î**<br>**ÎÎ**<br>R JA<br>**ÎÎ**<br>62.5<br>**ÎÎ**<br>°C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction−to−Case<br>Î<br>Î**Î**<br>R JC<br>Î**Î**<br>3.125<br>ÎÎ<br>°C/W<br>~~——~~||**ORDERING INFORMATION**<br>xx = 1C, 2B, or 2C<br>A<br>= Assembly Location<br>Y<br>= Year<br>WW<br>= Work Week<br>G<br>= Pb−Free Package||||



|**Device**|**Package**|**Shipping**†|
|---|---|---|
|BD241CG|TO−220<br>(Pb−Free)|50 Units/Rail|
|BD242BG|TO−220<br>(Pb−Free)|50 Units/Rail|
|BD242CG|TO−220<br>(Pb−Free)|50 Units/Rail|



> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **November, 2014 − Rev. 10** 

**BD241C/D** 

**BD241C (NPN), BD242B (PNP), BD242C (PNP)** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Sustaining Voltage (Note 1)<br>(IC= 30 mAdc, IB= 0)<br>BD242B<br>BD241C, BD242C|VCEO|80<br>100||Vdc|
|Collector Cutoff Current<br>(VCE= 50 Vdc, IB= 0)<br>BD242B<br>(VCE= 60 Vdc, IB= 0)<br>BD241C, BD242C|ICEO||0.3|mAdc|
|Collector Cutoff Current<br>(VCE= 80 Vdc, VEB= 0)<br>BD242B<br>(VCE= 100 Vdc, VEB= 0)<br>BD241C, BD242C|ICES||200|�Adc|
|Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)|IEBO||1.0|mAdc|
|**ON CHARACTERISTICS**(Note 1)|||||
|DC Current Gain<br>(IC= 1.0 Adc, VCE= 4.0 Vdc)<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)|hFE|25<br>10|||
|Collector−Emitter Saturation Voltage<br>(IC= 3.0 Adc, IB= 0.6 Adc)|VCE(sat)||1.2|Vdc|
|Base−Emitter On Voltage<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)|VBE(on)||1.8|Vdc|
|**DYNAMIC CHARACTERISTICS**|||||
|Current Gain − Bandwidth Product (Note 2)<br>(IC= 500 mAdc, VCE= 10 Vdc, ftest= 1.0 MHz)|fT|3.0||MHz|
|Small−Signal Current Gain<br>(IC= 0.5 Adc, VCE= 10 Vdc, f = 1.0 kHz)|hfe|20|||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 2. fT = |hfe| • ftest. 

**==> picture [238 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140 160<br>TC, CASE TEMPERATURE (°C)<br>PD, POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br>


**Figure 1. Power Derating** 

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**2** 

**BD241C (NPN), BD242B (PNP), BD242C (PNP)** 

**==> picture [487 x 599] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0<br>APPROX TURN‐ON PULSE VCC RL 1.0 TICJ/I = 25B = 10°C<br>+ 11 V Vin SCOPE 0.7 tr @ VCC = 30 V<br>RK 0.5<br>Vin 0 Cjd ��Ceb 0.3<br>VEB(off) t1 - 4.0 V tr @ VCC = 10 V<br>t3<br>APPROX t1 � 7.0 ns 0.1<br>+ 11 V<br>100 � t2 � 500 �s<br>t3 � 15 ns 0.07 td @ VBE(off) = 2.0 V<br>0.05<br>Vin<br>0.03<br>t2 DUTY CYCLE � 2.0% 0.020.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0<br>APPROX - 9.0 V<br>TURN‐OFF PULSE<br>IC, COLLECTOR CURRENT (AMP)<br>Figure 2. Switching Time Equivalent Circuit Figure 3. Turn−On Time<br>1.0<br>0.7<br>D = 0.5<br>0.5<br>0.3<br>0.2<br>0.2<br>0.1<br>0.070.1 0.05 ZR��JCJC = 3.125(t) = r(t) R ° C/W MAX�JC P(pk)<br>0.05 D CURVES APPLY FOR POWER<br>0.02<br>PULSE TRAIN SHOWN<br>0.03 t 1<br>0.02 0.01 SINGLE PULSE TREAD TIME AT tJ(pk) - TC = P(pk)1 Z�JC(t) DUTY CYCLE, D = t t 2 1 /t 2<br>0.010.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k<br>t, TIME (ms)<br>Figure 4. Thermal Response<br>10 There are two limitations on the power handling ability of<br>a transistor: average junction temperature and second<br>5.0 1.0 ms breakdown. Safe operating area curves indicate IC − VC − V− VCE<br>100 �s limits of the transistor that must be observed for reliable<br>5.0 ms<br>2.0 operation, i.e., the transistor must not be subjected to greater<br>dissipation than the curves indicate.<br>1.0 SECOND BREAKDOWN The data of Figure 5 is based on TJ(pk) = 150°C; TCJ(pk) = 150°C; TC = 150°C; TC°C; TCC; TCC is<br>LIMITED @ TJ � 150°C variable depending on conditions. Second breakdown pulse<br>0.5 THERMAL LIMITATION @ TC = 25°C limits are valid for duty cycles to 10% provided<br>BONDING WIRE LIMITED TJ(pk) ≤ 150°C,  TJ(pk) may be calculated from the data inJ(pk) ≤ 150°C,  TJ(pk) may be calculated from the data in ≤ 150°C,  TJ(pk) may be calculated from the data in 150°C,  TJ(pk) may be calculated from the data in°C,  TJ(pk) may be calculated from the data inC,  TJ(pk) may be calculated from the data inJ(pk) may be calculated from the data in may be calculated from the data in<br>0.2 CURVES APPLY BELOW Figure 4. At high case temperatures, thermal limitations will<br>RATED VCEO reduce the power that can be handled to values less than the<br>BD241C, BD242C<br>0.1 limitations imposed by second breakdown.<br>5.0 10 20 50 100<br>IC, COLLECTOR CURRENT (AMP)<br>μ<br>t, TIME (��s)<br>(NORMALIZED)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VC − V− VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 

The data of Figure 5 is based on TJ(pk) = 150°C; TCJ(pk) = 150°C; TC = 150°C; TC°C; TCC; TCC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C,  TJ(pk) may be calculated from the data inJ(pk) ≤ 150°C,  TJ(pk) may be calculated from the data in ≤ 150°C,  TJ(pk) may be calculated from the data in 150°C,  TJ(pk) may be calculated from the data in°C,  TJ(pk) may be calculated from the data inC,  TJ(pk) may be calculated from the data inJ(pk) may be calculated from the data in may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

**Figure 5. Active Region Safe Operating Area** 

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**3** 

**BD241C (NPN), BD242B (PNP), BD242C (PNP)** 

**==> picture [486 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.0 300<br>2.0 ts′ IIB1C/I = IB = 10B2 TJ = + 25°C<br>0.71.0 tf @ VCC = 30 V tTsJ′ = t = 25s - 1/8 t°C f 200<br>0.5<br>100<br>0.3<br>0.2 tf @ VCC = 10 V Ceb<br>70<br>0.1<br>0.07 50 Ccb<br>0.05<br>0.03 30<br>0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40<br>IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 6. Turn−Off Time Figure 7. Capacitance<br>500 2.0<br>300 TJ = 150°C VCE = 2.0 V TJ = 25°C<br>1.6<br>25°C<br>100<br>70 -�55°C 1.2 IC = 0.3 A 1.0 A 3.0 A<br>50<br>30 0.8<br>0.4<br>10<br>7.0<br>5.0 0<br>0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000<br>IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)<br>Figure 8. DC Current Gain Figure 9. Collector Saturation Region<br>1.4 +�2.5<br>T J  = 25°C +�2.0 *APPLIES FOR IC/IB ≤ 5.0<br>1.2 TJ = - 65°C TO + 150°C<br>+�1.5<br>1.0 +�1.0<br>0.8 +�0.5 *�VC FOR VCE(sat)<br>V BE(sat)  @ I C /I B  = 10 0<br>0.6<br>-�0.5<br>V BE  @ V CE  = 2.0 V<br>0.4 -�1.0<br>-�1.5<br>0.2 VCE(sat) @ IC/IB = 10 �VB FOR VBE<br>-�2.0<br>0 -�2.5<br>0.003 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)<br>μ<br>t, TIME (��s)<br>CAPACITANCE (pF)<br>hFE, DC CURRENT GAIN<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>C)°<br>V, VOLTAGE (VOLTS)<br>V, TEMPERATURE COEFFICIENTS (mV/<br>θ<br>**----- End of picture text -----**<br>


**Figure 10. “On” Voltages** 

**Figure 11. Temperature Coefficients** 

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**4** 

**BD241C (NPN), BD242B (PNP), BD242C (PNP)** 

**==> picture [242 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [3]<br>10 [2] V CE  = 30 V<br>10 [1] T J  = 150°C<br>10 [0] 100°C<br>10 [-1]<br>REVERSE FORWARD<br>10 [-�2] 25°C<br>ICES<br>10 [-�3]<br>-�0.4 -�0.3 -�0.2 -�0.1 0 +�0.1 +�0.2 +�0.3 +�0.4 +�0.5 +�0.6<br>VBE, BASE-EMITTER VOLTAGE (VOLTS)<br>μ<br>, COLLECTOR CURRENT (��A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 12. Collector Cut−Off Region** 

**==> picture [238 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [7]<br>IC = 10 x ICES VCE = 30 V<br>10 [6]<br>10 [5]<br>IC ≈ ICES<br>IC = 2 x ICES<br>10 [4]<br>10 [3] (TYPICAL ICES VALUES<br>OBTAINED FROM FIGURE 12)<br>10 [2]<br>20 40 60 80 100 120 140 160<br>TJ, JUNCTION TEMPERATURE (°C)<br>RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)<br>**----- End of picture text -----**<br>


**Figure 13. Effects of Base−Emitter Resistance** 

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**5** 

**BD241C (NPN), BD242B (PNP), BD242C (PNP)** 

## **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A−09 ISSUE AH 

**==> picture [233 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEATING<br>−T− PLANE<br>B F C<br>T S<br>4<br>Q A<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>THe V J |<br>G<br>D<br>;<br>N<br>**----- End of picture text -----**<br>


- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 

|**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|---|---|
||**MIN**<br>**INCHES**|**MAX**<br>**INCHES**|**MIN**<br>**MILLIMETERS**|**MAX**<br>**MILLIMETERS**|
|**DIM**<br>**A**|**MIN**<br>0.570|**MAX**<br>0.620|**MIN**<br>14.48|**MAX**<br>15.75|
|**B**|0.380|0.415|9.66|10.53|
|**B**<br>**C**|0.380<br>0.160|0.415<br>0.190|9.66<br>4.07|10.53<br>4.83|
|**D**|0.025|0.038|0.64|0.96|
|**F**|0.142|0.161|3.61|4.09|
|**G**|0.095|0.105|2.42|2.66|
|**H**|0.110|0.161|2.80|4.10|
|**J**|0.014|0.024|0.36|0.61|
|**K**|0.500|0.562|12.70|14.27|
|**L**|0.045|0.060|1.15|1.52|
|**N**|0.190|0.210|4.83|5.33|
|**Q**|0.100|0.120|2.54|3.04|
|**Q**<br>**R**<br>SSEEe|0.100<br>0.080<br>SSEEe|0.120<br>0.110<br>SSEEe|2.54<br>2.04<br>SSEEe|3.04<br>2.79<br>SSEEe|
|**S**<br>SSEEe|0.045<br>SSEEe|0.055<br>SSEEe|1.15<br>SSEEe|1.39<br>SSEEe|
|**S**<br>**T**<br>SSEEe|0.045<br>0.235<br>SSEEe|0.055<br>0.255<br>SSEEe|1.15<br>5.97<br>SSEEe|1.39<br>6.47<br>SSEEe|
|**U**<br>SSEEe|0.000<br>SSEEe|0.050<br>SSEEe|0.00<br>SSEEe|1.27<br>SSEEe|
|**V**<br>SSEEe|0.045<br>SSEEe|---<br>SSEEe|1.15<br>SSEEe|---<br>SSEEe|
|**Z**<br>SSEEe|---<br>SSEEe|0.080<br>SSEEe|---<br>SSEEe|2.04<br>SSEEe|



STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 

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**BD241C/D** 

**6**