BD237STU
Bipolar (BJT) Single Transistor, NPN, 80 V, 2 A, 25 W, TO-225AA, Through Hole
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 25W
- DC Current Gain hFE: 25hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: 3MHz
- Transistor Case Style: TO-225AA
- DC Current Gain hFE Min: 25hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 2A
- Collector Emitter Voltage Max: 80V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.108 € |
| Current stock | 10+ |
| Lead time | 30 days |
**==> picture [106 x 35] intentionally omitted <==** ## **BD233/235/237** ## **Medium Power Linear and Switching Applications** - Complement to BD 234/236/238 respectively **==> picture [117 x 93] intentionally omitted <==** **----- Start of picture text -----**<br> 1 TO-126<br>1. Emitter 2.Collector 3.Base<br>**----- End of picture text -----**<br> ## **NPN Epitaxial Silicon Transistor** ## **Absolute Maximum Ratings** TC=25°C unless otherwise noted |**Absolute M**|**aximum Ratings**TC=25°C unless otherwise noted||| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Units**| |VCBO|Collector-Base Voltage : BD233<br>: BD235<br>: BD237|45<br>60<br>100|V<br>V<br>V| |VCEO|Collector-Emitter Voltage : BD233<br>: BD235<br>: BD237|45<br>60<br>80|V<br>V<br>V| |VCER|Collector-Emitter Voltage : BD233<br>: BD235<br>: BD237|45<br>60<br>100|V<br>V<br>V| |VEBO|Emitter-Base Voltage|5|V| |IC|Collector Current (DC)|2|A| |ICP|*Collector Current (Pulse)|6|A| |PC|Collector Dissipation (TC=25°C)|25|W| |TJ|Junction Temperature|150|°C| |TSTG|Storage Temperature|- 65 ~ 150|°C| ## **Electrical Characteristics** TC=25°C unless otherwise noted |**Electrical**|**Characteristics**TC=25°C unless othe|rwise noted|||| |---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Typ.**<br>|**Max.**<br>**Units**| |VCEO(sus)|* Collector-Emitter Sustaining Voltage<br>: BD233<br>: BD235<br>: BD237|IC= 100mA, IB= 0|45<br>60<br>80||V<br>V<br>V| |ICBO|Collector Cut-off Current<br>: BD233<br>: BD235<br>: BD237|VCB= 45V, IE= 0<br>VCB= 60V, IE= 0<br>VCB= 100V, IE= 0|||100<br>100<br>100<br>µA<br>µA<br>µA| |IEBO|Emitter Cut-off Current|VEB= 5V, IC = 0|||1<br>mA| |hFE|* DC Current Gain|VCE= 2V, IC= 150mA<br>VCE= 2V, IC = 1A|40<br>25||| |VCE(sat)|* Collector-Emitter Saturation Voltage|IC = 1A, IB= 0.1A|||0.6<br>V| |VBE(on)|* Base-Emitter ON Voltage|VCE= 2V, IC = 1A|||1.3<br>V| |fT|Current Gain Bandwidth Product|VCE= 10V, IC = 250mA|3||MHz| * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 ## **Typical Characteristics** **==> picture [429 x 399] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 10<br>VCE = 2V IC = 10 IB<br>100 1 VBE(sat)<br>VCE(sat)<br>0.1<br>10<br>0.01<br>0.1 1 10<br>1<br>0.01 0.1 1 10<br>IC[A], COLLECTOR CURRENT<br>IC[A], COLLECTOR CURRENT<br>Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage<br>Collector-Emitter Saturation Voltage<br>10 40<br>IC MAX. (Pulsed) 10µs<br>35<br>30<br>IC MAX. (Continuous)<br>25<br>1 20<br>15<br>10<br>5<br>0.1 0<br>1 10 100 0 25 50 75 100 125 150 175<br>VCE[V], COLLECTOR-EMITTER VOLTAGE TC[oC], CASE TEMPERATURE<br>Figure 3. Safe Operating Area Figure 4. Power Derating<br>DC<br>100µs<br>1ms<br>(sat)[V], SATURATION VOLTAGE<br>CE<br>, DC CURRENT GAIN<br>FE<br>h<br>(sat), V<br>BE<br>V<br>[A], COLLECTOR CURRENTIC BD233 BD235 BD237 [W], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br> ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 ## **Package Demensions** **==> picture [289 x 402] intentionally omitted <==** **----- Start of picture text -----**<br> TO-126<br>8.00 ±0.30 3.25 ±0.20<br>ø3.20 ±0.10<br>(1.00) (0.50)<br>0.75 ±0.10<br>1.75 ±0.20<br>1.60 ±0.10<br>0.75 ±0.10<br>#1<br>2.28TYP 2.28TYP 0.50 [+0.10] –0.05<br>[2.28±0.20] [2.28±0.20]<br>0.10<br>±<br>3.90<br>0.20<br>±<br>14.20MAX 11.00<br>0.20<br>0.30 ±<br>±<br>16.10<br>13.06<br>**----- End of picture text -----**<br> Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 ## **TRADEMARKS** The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. |ACEx™|FAST®|OPTOPLANAR™|STAR*POWER™| |---|---|---|---| |Bottomless™|FASTr™|PACMAN™|Stealth™| |CoolFET™|FRFET™|POP™|SuperSOT™-3| |_CROSSVOLT_™|GlobalOptoisolator™|Power247™|SuperSOT™-6| |DenseTrench™|GTO™|PowerTrench®|SuperSOT™-8| |DOME™|HiSeC™|QFET™|SyncFET™| |EcoSPARK™|ISOPLANAR™|QS™|TruTranslation™| |E2CMOS™|LittleFET™|QT Optoelectronics™|TinyLogic™| |EnSigna™<br>FACT™|MicroFET™<br>MICROWIRE™|Quiet Series™<br>SLIENT SWITCHER®|UHC™<br>UltraFET®| |FACT Quiet Series™|OPTOLOGIC™|SMART START™|VCX™| |STAR*POWER is used under|license||| ## **DISCLAIMER** FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ## **LIFE SUPPORT POLICY** FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ## **PRODUCT STATUS DEFINITIONS** ## **Definition of Terms** |**Definition of Terms**||| |---|---|---| |**Datasheet Identification**|**Product Status**|**Definition**| |Advance Information|Formative or In<br>Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.| |Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.| |No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.| |Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.| ©2001 Fairchild Semiconductor Corporation Rev. H3
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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