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BD237

Bipolar (BJT) Single Transistor, NPN, 80 V, 2 A, 25 W, TO-126, Through Hole

  • Manufacturer: STMICROELECTRONICS
  • Product type: Single Bipolar Junction Transistors - BJT
  • Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:3MHz; Power Dissipation Pd:25W; DC Collector Current:2A; DC Current Gain hFE:40hFE; Transistor Case Style:
  • MSL: -
  • SVHC: No SVHC (25-Jun-2025)
  • No. of Pins: 3Pins
  • Product Range: -
  • Qualification: -
  • Power Dissipation: 25W
  • Transistor Mounting: Through Hole
  • Transistor Polarity: NPN
  • Transition Frequency: 3MHz
  • Transistor Case Style: TO-126
  • DC Current Gain hFE Min: 40hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 2A
  • Collector Emitter Voltage Max: 80V
Delivery and price
Units per pack 5000
Price 0.165 €
Current stock 1000+
Lead time 7 days

Updated at March 18, 2026