BD179G.

## BD179G 

## Plastic Medium-Power Silicon NPN Transistor 

This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 

## **Features** 

**http://onsemi.com** 

- High DC Current Gain 

**==> picture [465 x 275] intentionally omitted <==**

**----- Start of picture text -----**<br>
• BD179 is complementary with BD180 3.0 AMPERES<br>• These Devices are Pb−Free and are RoHS Compliant* POWER TRANSISTORS<br>NPN SILICON<br>MAXIMUM RATINGS 80 VOLTS, 30 WATTS<br>Rating Symbol Value Unit<br>Collector−Emitter Voltage VCEO 80 Vdc COLLECTOR<br>Collector−Base Voltage VCBO 80 Vdc 2<br>Emitter−Base Voltage VEBO 5.0 Vdc<br>Collector Current IC 3.0 Adc 3<br>Base Current IB 1.0 Adc BASE<br>Total Power Dissipation PD 1<br>@ TC = 25 C 30 W<br>EMITTER<br>Derate above 25 C 240 mW/ C<br>Operating and Storage Junction  TJ, Tstg –65 to +150 C<br>Temperature Range<br>a;<br>Stresses exceeding Maximum Ratings may damage the device. Maximum<br>Se ee “7<br>Ratings are stress ratings only. Functional operation above the Recommended<br>Operating Conditions is not implied. Extended exposure to stresses above the TO−225<br>Recommended Operating Conditions may affect device reliability. CASE 77<br>STYLE 1<br>THERMAL CHARACTERISTICS<br>Characteristic —_—_}_+__ Symbol Max Unit 3 2 1<br>**----- End of picture text -----**<br>


|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**<br>~~—_—_}_+__~~|**Max**<br>~~—_—_}_+__~~|**Unit**<br>~~—_—_}_+__~~|
|Thermal Resistance, Junction−to−Case|R JC|4.16|C/W|



**==> picture [90 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
MARKING DIAGRAM<br>**----- End of picture text -----**<br>


YWW BD179G ~~S~~ | Y = Year WW = Work Week BD179 = Device Code G = Pb−Free Package 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**ORDERING INFORMATION Device Package Shipping** BD179G TO−225 500 Units/Box (Pb−Free) ~~fT~~ 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2013 **Noember, 2013 − Rev. 15** 

**BD179/D** 

**BD179G** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Collector−Emitter Sustaining Voltage (Note 1)<br>(IC= 0.1 Adc, IB= 0)|V(BR)CEO|80|−|Vdc|
|Collector Cutoff Current<br>(VCB= 80 Vdc, IE= 0)|ICBO|−|0.1|mAdc|
|Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)|IEBO|−|1.0|mAdc|
|DC Current Gain<br>(IC= 0.15 A, VCE= 2.0 V)<br>(IC= 1.0 A, VCE= 2.0 V)|hFE|63<br>15|160<br>−|−|
|Collector−Emitter Saturation Voltage (Note 1)<br>(IC= 1.0 Adc, IB= 0.1 Adc)|VCE(sat)|−|0.8|Vdc|
|Base−Emitter On Voltage (Note 1)<br>(IC= 1.0 Adc, VCE= 2.0 Vdc)|VBE(on)|−|1.3|Vdc|
|Current−Gain − Bandwidth Product<br>(IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 MHz)|fT|3.0|−|MHz|



1. Pulse Test: Pulse Width ≤ 300 As, Duty Cycle ≤ 2.0%. 

**==> picture [230 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>7.0 100 �s<br>5.0 1.0 ms<br>3.0<br>2.0 5.0 ms<br>dc<br>1.0 TJ = 150°C<br>0.7<br>0.5 SECONDARY BREAKDOWN LIMITATION<br>THERMAL LIMITATION<br>0.3<br>(BASE-EMITTER DISSIPATION IS<br>0.2<br>SIGNIFICANT ABOVE IC = 2.0 AMP)<br>PULSE DUTY CYCLE < 10%<br>0.1<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>


The Safe Operating Area Curves indicate IC − VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power−temperature derating must be observed for both steady state and pulse power conditions. 

**Figure 1. Active Region Safe Operating Area** 

**http://onsemi.com** 

**2** 

**BD179G** 

**==> picture [480 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>0.8<br>IC = 0.1 A 0.25 A 0.5 A 1.0 A<br>0.6<br>TJ = 25°C<br>0.4<br>0.2<br>0<br>0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200<br>IB, BASE CURRENT (mA)<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 2. Collector Saturation Region** 

**==> picture [492 x 397] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1.5<br>700<br>500 VCE = 2.0 V TJ = 25°C<br>1.2<br>300<br>200<br>0.9<br>100 TJ = + 150°C VBE(sat) @ IC/IB = 10<br>70 TJ = + 25°C 0.6<br>50 VBE @ VCE = 2.0 V<br>30 T J  = + 55°C 0.3<br>20<br>VCE(sat) @ IC/IB = 10<br>10 0<br>2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Current Gain Figure 4. “On” Voltages<br>1.0<br>0.7 D = 0.5<br>0.5<br>0.3 D = 0.2<br>0.2 D = 0.1<br>SINGLE PULSE<br>0.1 D = 0.05 � � JC JC (t) = r(t)   = 4.16°C/W MAX �JC P(pk)<br>0.07 D = 0.01 �JC = 3.5°C/W TYP<br>0.05 D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN t 1<br>0.03 t 2<br>0.02 READ TIME AT t 1<br>T J(pk) - T C  = P (pk) � JC (t) DUTY CYCLE, D = t 1 /t 2<br>0.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000<br>t, TIME or PULSE WIDTH (ms)<br>VOLTAGE (VOLTS)<br>hFE, DC CURRENT GAIN (NORMALIZED)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


**Figure 5. Thermal Response** 

**http://onsemi.com** 

**3** 

**BD179G** 

## **PACKAGE DIMENSIONS** 

**==> picture [420 x 308] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO−225<br>CASE 77−09<br>ISSUE AB<br>E<br>A1 NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>Q A ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. NUMBER AND SHAPE OF LUGS OPTIONAL.<br>MILLIMETERS<br>DIM MIN MAX<br>A 2.40 3.00<br>D A1 1.00 1.50<br>P b 0.60 0.90<br>b2 0.51 0.88<br>c 0.39 0.63<br>1 2 3 D 10.60 11.10<br>E 7.40 7.80<br>e 2.04 2.54<br>L 14.50 16.63<br>L1 1.27 2.54<br>L1 P 2.90 3.30<br>=: = A Q 3.80 4.20<br>L<br>STYLE 1:<br>PIN 1. EMITTER<br>2. COLLECTOR<br>3. BASE<br>|<br>2X b2<br>2X e<br>b c<br>**----- End of picture text -----**<br>


**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com 

**N. American Technical Support** : 800−282−9855 Toll Free USA/Canada 

**ON Semiconductor Website** : **www.onsemi.com** 

**Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative 

**http://onsemi.com** 

**BD179/D** 

**4**