BD139G

Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1.5 A, 1.25 W, TO-225AA, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:1.25W; DC Collector Current:1.5A; DC Current Gain hFE:40hFE; Transistor Case Sty
MSL: -
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 1.25W
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: -
Transistor Case Style: TO-225AA
DC Current Gain hFE Min: 40hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 1.5A
Collector Emitter Voltage Max: 80V

Delivery and price
Units per pack	5000
Price	0.309 €
Current stock	200+
Lead time	7 days

Datasheet

Updated at March 14, 2026