BD13916STU
Bipolar (BJT) Single Transistor, NPN, 80 V, 1.5 A, 1.25 W, TO-126, Through Hole
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:1.25W; DC Collector Current:1.5A; DC Current Gain hFE:100hFE; Transi
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 1.25W
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: -
- Transistor Case Style: TO-126
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 1.5A
- Collector Emitter Voltage Max: 80V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.209 € |
| Current stock | 1000+ |
| Lead time | 7 days |
## **ON Semiconductor** ## **Is Now** **==> picture [390 x 69] intentionally omitted <==** **To learn more about onsemi™, please visit our website at www.onsemi.com** **onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ## **BD135 / 137 / 139 NPN Epitaxial Silicon Transistor** ## **Features** - Complement to BD136, BD138 and BD140 respectively ## **Applications** - Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base ## **Ordering Information** |**Part Number**|**Marking**|**Package**|**Packing Method**| |---|---|---|---| |BD13516S|BD135-16|TO-126 3L|Bulk| |BD1356STU|BD135-6||Rail| |BD13510STU|BD135-10||| |BD13516STU|BD135-16||| |BD13716STU|BD137-16||| |BD13710STU|BD137-10||| |BD13716S|BD137-16||Bulk| |BD13916STU|BD139-16||Rail| |BD13910S|BD139-10||Bulk| |BD13916S|BD139-16||| |BD1396STU|BD139-6||Rail| |BD13910STU|BD139-10||| © 2007 Semiconductor Components Industries, LLC. November-2017, Rev. 2 Publication Order Number: BD139/D ## **Absolute Maximum Ratings** Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. |**Symbol**|**Parameter**||**Value**|**Units**| |---|---|---|---|---| |VCBO|Collector-Base Voltage|BD135|45|V| |||BD137|60|| |||BD139|80|| |VCEO|Collector-Emitter Voltage|BD135|45|V| |||BD137|60|| |||BD139|80|| |VEBO|Emitter-Base Voltage||5|V| |IC|Collector Current(DC)||1.5|A| |ICP|Collector Current(Pulse)||3.0|A| |IB|Base Current||0.5|A| |PC|Device Dissipation|TC= 25°C|12.5|W| |||TA= 25°C|1.25|W| |TJ|Junction Temperature||150|°C| |TSTG|Storage Temperature||- 55 to +150|°C| ## **Electrical Characteristics** Values are at TC = 25 ° C unless otherwise noted. |**Symbol**|**Parameter**||**Test Condition**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---|---|---| |VCEO(sus)|Collector-Emitter Sustaining<br>Voltage|BD135|IC= 30 mA, IB= 0|45|||V| |||BD137||60|||| |||BD139||80|||| |ICBO|Collector Cut-off Current||VCB= 30 V, IE= 0|||0.1|μA| |IEBO|Emitter Cut-off Current||VEB= 5 V, IC= 0|||10|μA| |hFE1|DC Current Gain||VCE= 2 V, IC= 5 mA|25|||| |hFE2|||VCE= 2 V, IC= 0.5 A|25|||| |hFE3|||VCE= 2 V, IC= 150 mA|40||250|| |VCE(sat)|Collector-Emitter Saturation Voltage||IC= 500 mA, IB= 50 mA|||0.5|V| |VBE(on)|Base-Emitter On Voltage||VCE= 2 V, IC= 0.5 A|||1|V| ## **hFE Classification** |**hFE Classification**|||| |---|---|---|---| |**Classification**|**6**|**10**|**16**| |hFE3|40 ~ 100|63 ~ 160|100 ~ 250| www.onsemi.com 2 ## **Typical Performance Characteristics** **==> picture [409 x 534] intentionally omitted <==** **----- Start of picture text -----**<br> 100 500<br>VCE = 2V<br>90 450<br>80 400<br>70 350<br>60 300<br>50 250<br>40 200<br>30 150<br>20 100<br>10 50<br>0 0<br>10 100 1000 1E-3 0.01 0.1 1 10<br>IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT<br>Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage<br>1.1 10<br>1.0 IC MAX. (Pulsed) 10us<br>0.9 IC MAX. (Continuous)<br>0.8 1 100us<br>0.7<br>0.6<br>0.5<br>0.1<br>0.4<br>0.3<br>0.2<br>0.1 0.01<br>1E-3 0.01 0.1 1 10 1 10 100<br>IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE<br>Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area<br>20.0<br>17.5<br>15.0<br>12.5<br>10.0<br>7.5<br>5.0<br>2.5<br>0.0<br>0 25 50 75 100 125 150 175<br>TC[oC], CASE TEMPERATURE<br>VIBEC(sat) = 10 IB<br>VVBE(on)CE = 5V DC<br>1ms<br>I = 10 ICB<br>, DC CURRENT GAIN I = 20 ICB<br>FE<br>h<br>(sat)[mV], SATURATION VOLTAGE<br>CE<br>V<br>[V], BASE-EMITTER VOLTAGEVBE [A], COLLECTOR CURRENTIC<br>BD135 BD137 BD139<br>[W], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br> **Figure 2. Collector-Emitter Saturation Voltage** **Figure 5. Power Derating** www.onsemi.com 3 ## **Physical Dimensions** **==> picture [84 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> TO-126 3L<br>**----- End of picture text -----**<br> ## **Figure 6. TO-126 (SOT-32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products._ www.onsemi.com 4 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor **N. 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Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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