BD13716S

Bipolar (BJT) Single Transistor, NPN, 60 V, 1.5 A, 1.25 W, TO-126, Through Hole

⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.

Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:-; Power Dissipation Pd:1.25W; DC Collector Current:1.5A; DC Current Gain hFE:40hFE; Transistor Case Style:TO-126;
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 1.25W
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: -
Transistor Case Style: TO-126
DC Current Gain hFE Min: 40hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 1.5A
Collector Emitter Voltage Max: 60V

Delivery and price
Units per pack	4000
Price	0.079 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026