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This product is RoHS compilant

BD13710STU

Bipolar (BJT) Single Transistor, NPN, 60 V, 1.5 A, 12.5 W, TO-126, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Power Dissipation: 12.5W
  • DC Current Gain hFE: 63hFE
  • Transistor Mounting: Through Hole
  • Transistor Polarity: NPN
  • Transistor Case Style: TO-126
  • DC Current Gain hFE Min: 63hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 1.5A
  • Collector Emitter Voltage Max: 60V
Delivery and price
Units per pack 500
Price 0.401 €
Current stock N/A
Lead time 30 days
PDF File icon Datasheet