BD13510STU

## BD135G, BD137G, BD139G 

## Plastic Medium-Power Silicon NPN Transistors 

This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 

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## **Features** 

## **1.5 A POWER TRANSISTORS NPN SILICON 45, 60, 80 V, 12.5 W** 

- High DC Current Gain 

- BD 135, 137, 139 are complementary with BD 136, 138, 140 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 

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COLLECTOR<br>2, 4<br>MAXIMUM RATINGS<br>Rating Symbol Value Unit<br>3<br>Collector−Emitter Voltage VCEO Vdc BASE<br>BD135G 45<br>BD137G 60 &)<br>BD139G 80 1<br>EMITTER<br>Collector−Base Voltage VCBO Vdc<br>BD135G 45<br>BD137G 60<br>BD139G 100<br>Emitter−Base Voltage VEBO 5.0 Vdc TO−225<br>Collector Current IC 1.5 Adc CASE 77−09<br>STYLE 1<br>Base Current IB 0.5 Adc<br>Total Device Dissipation@ TA = 25 ° C PD 1.25 Watts 1 2 3<br>Derate above 25 ° C 10 mW/ ° C<br>MARKING DIAGRAM<br>Total Device Dissipation PD<br>@ TC = 25 ° C 12.5 Watts<br>Derate above 25 ° C 100 mW/ ° C<br>Operating and Storage Junction TJ, Tstg –55 to +150 ° C YWWBD1xxG<br>Temperature Range<br>a?<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be Y = Year<br>assumed, damage may occur and reliability may be affected. WW = Work Week<br>BD1xx = Device Code<br>THERMAL CHARACTERISTICS<br>xx = 35, 37, 39<br>Characteristic Symbol Max Unit G = Pb−Free Package<br>**----- End of picture text -----**<br>


**Characteristic Symbol Max Unit** G = Pb−Free Package Thermal Resistance, Junction−to−Case R JC 10 ° C/W **ORDERING INFORMATION** Thermal Resistance, Junction−to−Ambient R JA 100 ° C/W **Device Package Shipping** BD135G TO−225 500 Units / Box (Pb−Free) BD135TG TO−225 50 Units / Rail (Pb−Free) BD137G TO−225 500 Units / Box (Pb−Free) *For additional information on our Pb−Free strategy  and soldering details, please BD139G TO−225 500 Units / Box download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free) ~~ne~~ Reference Manual, SOLDERRM/D. 

Publication Order Number: **BD135/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **December, 2013 − Rev. 17** 

**BD135G, BD137G, BD139G** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**UnIt**|
|Collector−Emitter Sustaining Voltage*<br>(IC= 0.03 Adc, IB= 0)<br>BD135G<br>BD137G<br>BD139G|BVCEO*|45<br>60<br>80|−<br>−<br>−|Vdc|
|Collector Cutoff Current<br>(VCB= 30 Vdc, IE= 0)<br>(VCB= 30 Vdc, IE= 0, TC= 125�C)|ICBO|−<br>−|0.1<br>10|�Adc|
|Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)|IEBO|−|10|�Adc|
|DC Current Gain<br>(IC= 0.005 A, VCE= 2 V)<br>(IC= 0.15 A, VCE= 2 V)<br>(IC= 0.5 A VCE= 2 V)|hFE*|25<br>40<br>25|−<br>250<br>−|−|
|Collector−Emitter Saturation Voltage*<br>(IC= 0.5 Adc, IB= 0.05 Adc)|VCE(sat)*|−|0.5|Vdc|
|Base−Emitter On Voltage*<br>(IC= 0.5 Adc, VCE= 2.0 Vdc)|VBE(on)*|−|1|Vdc|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

*Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 

## **TYPICAL CHARACTERISTICS** 

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1000 0.3<br>VCE = 2 V IC/IB = 10 150 ° C<br>150 ° C<br>0.2<br>25 ° C<br>−55 ° C<br>100 −55 ° C 25 ° C<br>0.1<br>10 0<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


**Figure 1. DC Current Gain** 

**Figure 2. Collector−Emitter Saturation Voltage** 

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**2** 

**BD135G, BD137G, BD139G** 

## **TYPICAL CHARACTERISTICS** 

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1.2 1.2<br>IC/IB = 10 VCE = 2 V<br>1.0 1.0<br>−55 ° C −55 ° C<br>0.8 25 ° C 0.8 25 ° C<br>0.6 0.6<br>150 ° C<br>150 ° C<br>0.4 0.4<br>0.2 0.2<br>0 0<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage<br>1000 10<br>f = 1 MHz<br>0.1 ms<br>Cib 5 ms 0.5 ms<br>100 1<br>TJ = 125 ° C dc<br>Cob<br>10 0.1<br>BD135<br>BD137<br>BD139<br>1 0.01<br>0.1 1 10 100 1 10 80<br>VR, REVERSE VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, BASE−EMITTER<br>BE(sat)<br>V<br>SATURATION VOLTAGE (V) , BASE−EMITTER ON VOLTAGE (V)<br>BE(on)<br>V<br>C, CAPACITANCE (pF)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 5. Capacitance** 

**Figure 6. Active−Region Safe Operating Area** 

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1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>0.25<br>0<br>0 20 40 60 80 100 120 140 160<br>TA, AMBIENT TEMPERATURE ( ° C)<br>, POWER DISSIPATION (W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Figure 7. Power Derating** 

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**3** 

**BD135G, BD137G, BD139G** 

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PACKAGE DIMENSIONS<br>TO−225<br>CASE 77−09<br>4 ISSUE AC<br>1 3<br>2 3 2 1<br>FRONT VIEW BACK VIEW<br>E NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>A1 ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.<br>PIN 4 MILLIMETERS<br>BACKSIDE TAB DIM MIN MAX<br>A 2.40 3.00<br>A1 1.00 1.50<br>b 0.60 0.90<br>D b2 0.51 0.88<br>P c 0.39 0.63<br>D 10.60 11.10<br>E 7.40 7.80<br>1 2 3<br>e 2.04 2.54<br>L 14.50 16.63<br>L1 1.27 2.54<br>P 2.90 3.30<br>L1 Q 3.80 4.20<br>STYLE 1:<br>L PIN 1.2., 4. EMITTERCOLLECTOR<br>3. BASE<br>Trcial<br>2X b2<br>2X e<br>I b c a l<br>FRONT VIEW SIDE VIEW<br>**----- End of picture text -----**<br>


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**BD135/D** 

**4**