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BCX70KE6327HTSA1
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 330 mW, SOT-23, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:250MHz; Power Dissipation Pd:330mW; DC Collector Current:100mA; DC Current Gain hFE:100hFE;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: AEC-Q101
- Qualification: AEC-Q101
- Power Dissipation: 330mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 250MHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 45V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.047 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BCW60, BCX70** ## **NPN Silicon AF Transistors** - For AF input stages and driver applications - High current gain - Low collector-emitter saturation voltage **==> picture [116 x 32] intentionally omitted <==** **----- Start of picture text -----**<br> 3 2<br>1<br>**----- End of picture text -----**<br> - Low noise between 30 Hz and 15 kHz - Complementary types: BCW61, BCX71 (PNP) - Pb-free (RoHS compliant) package[1)] - Qualified according AEC Q101 |**Type**|**Marking**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Package**| |---|---|---|---|---|---| |BCW60B<br>BCW60C<br>BCW60D<br>BCW60FF<br>BCX70G<br>BCX70H<br>BCX70J<br>BCX70K|ABs<br>ACs<br>ADs<br>AFs<br>AGs<br>AHs<br>AJs<br>AKs|1=B<br>1=B<br>1=B<br>1=B<br>1=B<br>1=B<br>1=B<br>1=B|2=E<br>2=E<br>2=E<br>2=E<br>2=E<br>2=E<br>2=E<br>2=E|3=C<br>3=C<br>3=C<br>3=C<br>3=C<br>3=C<br>3=C<br>3=C|SOT23<br>SOT23<br>SOT23<br>SOT23<br>SOT23<br>SOT23<br>SOT23<br>SOT23| 1Pb-containing package may be available upon special request 2007-04-20 1 **BCW60, BCX70** |**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Collector-emitter voltage<br>BCW60, ...60FF<br>BCX70|_V_CEO|32<br>45|V| |Collector-base voltage<br>BCW60, ...60FF<br>BCX70|_V_CBO|32<br>45|| |Emitter-base voltage|_V_EBO|6|| |Collector current|_I_C|100|mA| |Peak collector current|_I_CM|200|| |Peak base current|_I_BM|200|| |Total power dissipation<br>_T_S ≤71 °C|_P_tot|330|mW| |Junction temperature|_T_j|150|°C| |Storage temperature|_T_stg|-65 ... 150|| |**Thermal Resistance**|||| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction - soldering point1)|_R_thJS|≤240|K/W| > 1For calculation of _R_ thJA please refer to Application Note Thermal Resistance 2007-04-20 2 **BCW60, BCX70** |**Electrical Characteristics**at_T_~~A~~ =25°C, unless otherwise specified|**Electrical Characteristics**at_T_~~A~~ =25°C, unless otherwise specified|**Electrical Characteristics**at_T_~~A~~ =25°C, unless otherwise specified|**Electrical Characteristics**at_T_~~A~~ =25°C, unless otherwise specified|**Electrical Characteristics**at_T_~~A~~ =25°C, unless otherwise specified|**Electrical Characteristics**at_T_~~A~~ =25°C, unless otherwise specified| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**| |||**min.**|**typ.**|**max.**|| |**DC Characteristics**|||||| |Collector-emitter breakdown voltage<br>_I_C= 10 mA,_I_B= 0 , BCW60, ...60FF<br>_I_C= 10 mA,_I_B= 0 , BCX70|_V_(BR)CEO|32<br>45|-<br>-|-<br>-|V| |Collector-base breakdown voltage<br>_I_C= 10 µA,_I_E= 0 , BCW60, ...60FF<br>_I_C= 10 µA,_I_E= 0 , BCX70|_V_(BR)CBO|32<br>45|-<br>-|-<br>-|| |Emitter-base breakdown voltage<br>_I_E= 1µA,_I_C= 0|_V_(BR)EBO|6|-|-|| |Collector-base cutoff current<br>_V_CB= 32 V,_I_E= 0 , BCW60, ...60FF<br>_V_CB= 45 V,_I_E= 0 , BCX70<br>_V_CB= 32 V,_I_E= 0 ,_T_A= 150 °C, BCW60, ...60FF<br>_V_CB= 45 V,_I_E= 0 ,_T_A= 150 °C, BCX70|<br>_I_CBO|-<br>-<br>-<br>-|-<br>-<br>-<br>-|0.02<br>0.02<br>20<br>20|µA| |Emitter-base cutoff current<br>_V_EB= 4 V,_I_C= 0|_I_EBO|-|-|20|nA| |DC current gain-<br>_I_C= 10 µA,_V_CE= 5 V,_h_FE-grp. G<br>_I_C= 10 µA,_V_CE= 5 V,_h_FE-grp. B/ H<br>_I_C= 10 µA,_V_CE= 5 V,_h_FE-grp. C/ J/ FF<br>_I_C= 10 µA,_V_CE= 5 V,_h_FE-grp. D/ K<br>_I_C= 2 mA,_V_CE= 5 V,_h_FE-grp. G<br>_I_C= 2 mA,_V_CE= 5 V,_h_FE-grp. B/ H<br>_I_C= 2 mA,_V_CE= 5 V,_h_FE-grp. C/ J/ FF<br>_I_C= 2 mA,_V_CE= 5 V,_h_FE-grp. D/ K<br>_I_C= 50 mA,_V_CE= 1 V,_h_FE-grp. G<br>_I_C= 50 mA,_V_CE= 1 V,_h_FE-grp. B/ H<br>_I_C= 50 mA,_V_CE= 1 V,_h_FE-grp. C/ J/ FF<br>_I_C= 50 mA,_V_CE= 1 V,_h_FE-grp. D/ K|_h_FE|20<br>20<br>40<br>100<br>120<br>180<br>**250**<br>380<br>50<br>**70**<br>90<br>100|140<br>200<br>300<br>460<br>170<br>250<br>350<br>500<br>-<br>-<br>-<br>-|-<br>-<br>**-**<br>-<br>220<br>**310**<br>460<br>630<br>-<br>-<br>-<br>-|-| 2007-04-20 3 **BCW60, BCX70** |**DC Electrical Characteristics**|**DC Electrical Characteristics**||||| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**| |||**min.**|**typ.**|**max.**|| |**Characteristics**|||||| |Collector-emitter saturation voltage1)<br>_I_C= 10 mA,_I_B= 0.25 mA<br>_I_C= 50 mA,_I_B= 1.25 mA|_V_CEsat|-<br>-|0.12<br>0.2|0.25<br>0.55|V| |Base emitter saturation voltage1)<br>_I_C= 10 mA,_I_B= 0.25 mA<br>_I_C= 50 mA,_I_B= 1.25 mA|_V_BEsat|-<br>-|0.7<br>0.83|0.85<br>1.05|| |Base-emitter voltage1)<br>_I_C= 10 µA,_V_CE= 5 V<br>_I_C= 2 mA,_V_CE= 5 V<br>_I_C= 50 mA,_V_CE= 1 V|_V_BE(ON)|-<br>0.58<br>-|0.52<br>0.65<br>0.78|-<br>0.7<br>-|| 1Pulse test: t < 300µs; D < 2% 2007-04-20 4 **BCW60, BCX70** |**AC Characteristics**|**AC Characteristics**|**AC Characteristics**|**AC Characteristics**|**AC Characteristics**|**AC Characteristics**| |---|---|---|---|---|---| |Transition frequency<br>_I_C= 20 mA,_V_CE= 5 V,_f_= 100 MHz|_f_T|-|250|-|MHz| |Collector-base capacitance<br>_V_CB= 10 V,_f_= 1 MHz|_C_cb|-|0.95|-|pF| |Emitter-base capacitance<br>_V_EB= 0.5 V,_f_= 1 MHz|_C_eb|-|9|-|| |Short-circuit input impedance<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_FE-grp. G<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_FE-grp. B/ H<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_FE-grp. C/ J /FF<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_FE-grp. D/ K|<br>_h_11e|-<br>-<br>-<br>-|2.7<br>3.6<br>4.5<br>7.5|-<br>-<br>-<br>-|kΩ| |Open-circuit reverse voltage transf. ratio<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_FE-grp. G<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_FE-grp. B /H<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_FE-grp. C/ J/ FF<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_FE-grp. D/ K|<br>_h_12e|-<br>-<br>-<br>-|1.5<br>2<br>2<br>3|-<br>-<br>-<br>-|10-4| |Short-circuit forward current transf. ratio<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_FE-grp. G<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_FE-grp. B/ H<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_FE-grp. C/ J/ FF<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_FE-grp. D/ K|<br>_h_21e|-<br>-<br>-<br>-|200<br>260<br>330<br>520|-<br>-<br>-<br>-|-| |Open-circuit output admittance<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_FE-grp. G<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_**FE**-grp. B/ H<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz,_h_**FE**-grp. C/ J/ F<br>IC= 2 mA,_V_CE = 5 V, f = 1 kHz,_h_FE-grp. D/ K|F<br>_h_22e|**-**<br>-<br>-<br>-|18<br>24<br>30<br>50|-<br>-<br>-<br>-|µS| |Noise figure<br>_I_C**= 200 µA,**_V_CE = 5 V, f = 1 kHz,<br>D_f_= 200 Hz,_R_S= 2 kΩ,_h_FE-grp. B - K<br>_I_C= 200 µA,_V_CE= 5 V,_f_= 1 kHz,<br>∆ _f_= 200 Hz,_R_S= 2 kΩ,_h_FE-grp. FF|_F_|-<br>-|2<br>1|-<br>2|dB| |Equivalent noise voltage<br>_I_C= 200 µA,_V_CE= 5 V,_R_S= 2 kΩ,<br>_f_= 10...50 Hz ,_h_FE-grp. FF|_V_**n**|-|-|0.135|µV| 2007-04-20 5 **BCW60, BCX70** **DC current gain** _h_ FE = ƒ( _I_ C) _V_ CE = 5 V **==> picture [229 x 264] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3 BCW 60/BCX 70 EHP00334<br>5<br>h FE 100 ˚C<br>25 ˚C<br>10 2 -50 ˚C<br>5<br>10 [1]<br>5<br>10 0<br>10 -2 10 [-1] 10 [0] 10 1 mA 10 2<br>ΙC<br>**----- End of picture text -----**<br> ## **Base-emitter saturation voltage** _I_ C = ƒ( _V_ BEsat), _h_ FE = 40 **==> picture [231 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 10 2 BCW 60/BCX 70 EHP00331<br>mA<br>Ι C<br>100 ˚C<br>25 ˚C<br>-50 ˚C<br>10 [1]<br>5<br>10 [0]<br>5<br>10 -1<br>0 0.2 0.4 0.6 0.8 V 1.2<br>V BE sat<br>**----- End of picture text -----**<br> **Collector-emitter saturation voltage** _I_ C = ƒ( _V_ CEsat), _h_ FE = 10 **==> picture [230 x 602] intentionally omitted <==** **----- Start of picture text -----**<br> 10 2 BCW 60/BCX 70 EHP00332<br>mA<br>Ι C<br>100 ˚C<br>25 ˚C<br>-50 ˚C<br>10 [1]<br>5<br>10 [0]<br>5<br>10 -1<br>0 0.1 0.2 0.3 0.4 V 0.5<br>V CEsat<br>Collector current I C = ƒ( = ƒ(ƒ(( V BE))<br>V CE = 5V = 5V<br>10 2 BCW 60/BCX 70 EHP00333<br>mA<br>Ι C<br>10 1<br>5<br>10 [0]<br>5<br>100 ˚C 25 ˚C -50 ˚C<br>10 [-1]<br>5<br>10 -2<br>0 0.5 V 1.0<br>V BE<br>**----- End of picture text -----**<br> **Collector current** _I_ C = ƒ( = ƒ(ƒ(( _V_ BE)) _V_ CE = 5V = 5V 2007-04-20 6 **BCW60, BCX70** **Collector cutoff current** _I_ CBO = ƒ( _T_ A) _V_ = _V_ CB CEmax **==> picture [230 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> 10 4 BCW 60/BCX 70 EHP00335<br>nA<br>Ι CBO<br>10 3<br>max<br>10 [2]<br>10 1<br>10 0 typ<br>10 -1<br>0 50 100 ˚C 150<br>T A<br>**----- End of picture text -----**<br> **Collector-base capacitance** _C_ cb = ƒ( _V_ CB) **Emitter-base capacitance** _C_ eb = ƒ( _V_ EB) **==> picture [240 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>pF<br>10<br>9<br>8<br>7<br>6<br>5<br>CEB<br>4<br>3<br>2<br>1 CCB<br>0<br>0 4 8 12 16 V 22<br>V CB( V EB)<br>)<br>EB<br>(C<br>CB<br>C<br>**----- End of picture text -----**<br> **Transition frequency** _f_ T = ƒ( _I_ C) _V_ CE = parameter in V, _f_ = 2 GHz **==> picture [226 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3 BCW 60/BCX 70 EHP00330<br>MHz<br>f T<br>10 [2]<br>5<br>10 1<br>10 -1 10 [0] 10 [1] mA 10 2<br>ΙC<br>**----- End of picture text -----**<br> **Total power dissipation** _P_ tot = ƒ( _T_ S) **==> picture [230 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 360<br>mW<br>300<br>270<br>240<br>210<br>180<br>150<br>120<br>90<br>60<br>30<br>0<br>0 15 30 45 60 75 90 105 120 °C 150<br>T S<br>tot<br>P<br>**----- End of picture text -----**<br> 2007-04-20 7 **BCW60, BCX70** ## **Permissible Pulse Load** _P_ totmax/ _P_ totDC = ƒ( _t_ p) **==> picture [231 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3 BCW 60/BCX 70 EHP00328<br>PP totmaxtot DC 5 D = t p t p<br>T<br>T<br>10 [2] D =<br>0<br>0.005<br>5<br>0.01<br>0.02<br>0.05<br>0.1<br>0.2<br>0.5<br>10 [1]<br>5<br>10 0<br>10 -6 10 [-5] 10 [-4] 10 [-3] 10 [-2] s 10 [0]<br>t<br>p<br>**----- End of picture text -----**<br> **h parameter** _h_ e = ƒ( _V_ CE) **normalized** _I_ = 2mA C **==> picture [229 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> BCW 60/BCX 70 EHP00337<br>2.0<br>h e Ι C = 2 mA<br>1.5 h 21e<br>h 11e<br>1.0 h 12e<br>h 22e<br>0.5<br>0<br>0 10 20 V 30<br>V CE<br>**----- End of picture text -----**<br> **h parameter** _h_ e = ƒ( _I_ C) **normalized** _V_ CE = 5V **==> picture [229 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> 10 2 BCW 60/BCX 70 EHP00336<br>5<br>h e<br>h 11e V CE = 5 V<br>10 1<br>5<br>h 12e<br>10 [0] h 21e<br>5<br>h 22e<br>10 -1<br>10 -1 5 10 [0] mA 10 1<br>ΙC<br>**----- End of picture text -----**<br> **Noise figure** _F_ = ƒ( _V_ CE) _I_ C = 0.2mA, _R_ S = 2kΩ , _f_ = 1kHz **==> picture [231 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> BCW 60/BCX 70 EHP00338<br>20<br>dB<br>F<br>15<br>10<br>5<br>0<br>10 -1 10 [0] 10 [1] V 10 2<br>V CE<br>**----- End of picture text -----**<br> 2007-04-20 8 **BCW60, BCX70** **Noise figure** _F_ = ƒ( _f_ ) _V_ CE = 5V, _Z_ S = _Z_ Sopt **==> picture [233 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BCW 60/BCX 70 EHP00339<br>20<br>F dB<br>15<br>10<br>5<br>0<br>10 -2 10 [-1] 10 [0] 10 1 kHz 10 2<br>f<br>**----- End of picture text -----**<br> **Noise figure** _F_ = ƒ( _I_ C) _V_ CE = 5V, _f_ = 1kHz **==> picture [231 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> BCW 60/BCX 70 EHP00341<br>20<br>dB<br>F<br>15<br>R S= 1 MΩ 100 kΩ 10 kΩ<br>10<br>1 kΩ<br>5<br>500 Ω<br>0<br>10 -3 10 [-2] 10 [-1] 10 0 mA 10 1<br>Ι C<br>**----- End of picture text -----**<br> **Noise figure** _F_ = ƒ( _I_ C) _V_ CE = 5V, _f_ = 120Hz **==> picture [231 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BCW 60/BCX 70 EHP00340<br>20<br>dB<br>F<br>15 R S = 1 MΩ 100 kΩ 10 kΩ<br>10<br>500 Ω<br>5<br>1 kΩ<br>0<br>10 -3 10 [-2] 10 [-1] 10 0 mA 10 1<br>Ι C<br>**----- End of picture text -----**<br> **Noise figure** _F_ = ƒ( _I_ C) _V_ CE = 5V, _f_ = 10kHz **==> picture [231 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> BCW 60/BCX 70 EHP00342<br>20<br>dB<br>F<br>15 R S = 1 MΩ<br>100 kΩ<br>10<br>10 kΩ<br>500 Ω<br>5<br>1 kΩ<br>0<br>10 -3 10 [-2] 10 [-1] 10 0 mA 10 1<br>Ι C<br>**----- End of picture text -----**<br> 2007-04-20 9 **Package SOT23** **BCW60, BCX70** ## Package Outline **==> picture [244 x 457] intentionally omitted <==** **----- Start of picture text -----**<br> 1±0.1<br>2.9 ±0.1 0.1 MAX.<br>B<br>3<br>1 2<br>+0.1 1)<br>0.4 -0.05 A<br>C<br>0.95<br>1.9<br>0.25 M B C 0.2 M A<br>1) Lead width can be 0.6 max. in dambar area<br>0.8<br>0.8 1.2<br>Manufacturer<br>2005, June<br>EH s Date code (YM)<br>Pin 1 BCW66<br>Type code<br>0...8˚<br>0.08...0.15<br>0.15 MIN.<br> ±0.15 ±0.1<br>2.4 1.3<br>10˚ MAX. 10˚ MAX.<br>0.9<br>1.3<br>0.9<br>**----- End of picture text -----**<br> ## Foot Print ## Marking Layout (Example) ## Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel **==> picture [174 x 91] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>0.9 0.2<br>Pin 1 3.15 1.15<br>2.13 2.65<br>8<br>**----- End of picture text -----**<br> 2007-04-20 10 **BCW60, BCX70** Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. ## **Attention please!** The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( **www.infineon.com** ). ## **Warnings** Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-04-20 11
Updated at March 24, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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