BCX70K
Bipolar (BJT) Single Transistor, NPN, 45 V, 200 mA, 350 mW, SOT-23, Surface Mount
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 350mW
- DC Current Gain hFE: 100hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 125MHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 200mA
- Collector Emitter Voltage Max: 45V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 0.164 € |
| Current stock | 10+ |
| Lead time | 30 days |
## **BCX70K** **==> picture [424 x 76] intentionally omitted <==** **----- Start of picture text -----**<br> General Purpose Transistor 3<br>2<br>1 SOT-23<br>1. Base 2. Emitter 3. Collector<br>**----- End of picture text -----**<br> ## **NPN Epitaxial Silicon Transistor** **Absolute Maximum Ratings** Ta=25°C unless otherwise noted |**Absolute Maximum Ratings**Ta=25°C unless otherwise noteda=25°C unless otherwise noted=25°C unless otherwise noted°C unless otherwise notedC unless otherwise noted|| |---|---| |**Parameter**|**Value**| |Collector-Base Voltage|45| |Collector-Emitter Voltage|45| |Emitter-Base Voltage|5| |Collector Current|200| |Collector Power Dissipation|350| |Storage Temperature|-55 ~ 150| • Refer to KST3904 for graphs **Electrical Characteristics** Ta=25°C unless otherwise noted |**Parameter**<br>~~a~~|**Test Condition**|**Min.**|**Max.**| |---|---|---|---| |Collector-Emitter Breakdown Voltage<br>~~aa~~|IC=2.0mA, IB=0|45|| |Emitter-Base Breakdown Voltage<br>~~a~~|IE=1.0µA, IC=0|5|| |Collector Cut-off Current<br>~~a~~|VCE=32V, VBE=0||20| |Emitter Cut-off Current<br>~~a~~|VEB=4V, IC=0||20| |DC Current Gain|VCE=5V, IC=10µA<br>VCE=5V, IC=2.0mA<br>VCE=1V, IC=50mA|100<br>380<br>100|630| |Collector-Emitter Saturation Voltage|IC=10mA, IB=0.25mA<br>IC=50mA, IB=1.25mA||0.35<br>0.55| |Base-Emitter Saturation Voltage|IC=10mA, IB=0.25mA<br>IC=50mA, IB=1.25mA|0.6<br>0.7|0.85<br>1.05| |Base-Emitter On Voltage<br>~~a~~|IC=2.0mA, VCE=5V|0.55|0.75| |Current Gain Bandwidth Product<br>~~a~~<br>~~a~~|IC=10mA, VCE=5V, f=100MHz|125|| |Output Capacitance<br>~~a~~<br>~~a~~|VCB=10V, IE=0, f=1MHz||4.5| |Noise Figure<br>~~a~~|VCE=5V, IC=0.2mA<br>RS=2KΩ, f=1KHz||6| |Turn On Time<br>~~ee~~|IC=10mA, IB1=1.0mA<br>~~ee~~|~~ee~~|150<br>~~ee~~| |Turn Off Time<br>~~ee~~|VBB=3.6V, IB2=1.0mA<br>R1=R2=5KΩ, RL=990Ω<br>~~ee~~|~~ee~~|800<br>~~ee~~| **==> picture [29 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Marking<br>**----- End of picture text -----**<br> **==> picture [23 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> AK<br>**----- End of picture text -----**<br> ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 ## **Package Dimensions** **==> picture [64 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> SOT-23<br>**----- End of picture text -----**<br> **==> picture [380 x 268] intentionally omitted <==** **==> picture [92 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions in Millimeters<br>**----- End of picture text -----**<br> **==> picture [98 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> ©2002 Fairchild Semiconductor Corporation<br>**----- End of picture text -----**<br> **==> picture [57 x 5] intentionally omitted <==** **----- Start of picture text -----**<br> Rev. B2, December 2002<br>**----- End of picture text -----**<br> ## **TRADEMARKS** The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. |ACEx™|FACT™|ImpliedDisconnect™|PACMAN™|SPM™| |---|---|---|---|---| |ActiveArray™|FACT Quiet series™|ISOPLANAR™|POP™|Stealth™| |Bottomless™|FAST®|LittleFET™|Power247™|SuperSOT™-3| |CoolFET™|FASTr™|MicroFET™|PowerTrench®|SuperSOT™-6| |_CROSSVOLT_™|FRFET™|MicroPak™|QFET™|SuperSOT™-8| |DOME™|GlobalOptoisolator™|MICROWIRE™|QS™|SyncFET™| |EcoSPARK™|GTO™|MSX™|QT Optoelectronics™|TinyLogic™| |E2CMOS™|HiSeC™|MSXPro™|Quiet Series™|TruTranslation™| |EnSigna™|I2C™|OCX™|RapidConfigure™|UHC™| |Across the board.|Around the world.™|OCXPro™|RapidConnect™|UltraFET®| |The Power Franchise™||OPTOLOGIC®|SILENT SWITCHER®|VCX™| |Programmable Active Droop™||OPTOPLANAR™|SMART START™|| ## **DISCLAIMER** FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ## **LIFE SUPPORT POLICY** FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ## **PRODUCT STATUS DEFINITIONS** ## **Definition of Terms** |**Datasheet Identification**|**Product Status**|**Definition**| |---|---|---| |Advance Information|Formative or In<br>Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.| |Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.| |No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.| |Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.| ©2002 Fairchild Semiconductor Corporation Rev. I1
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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