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BCX5616TA
Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 1 W, SOT-89, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type:
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 1W
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 150MHz
- Transistor Case Style: SOT-89
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 1A
- Collector Emitter Voltage Max: 80V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.067 € |
| Current stock | 10+ |
| Lead time | 30 days |
**BCX54 /55 /56 NPN MEDIUM POWER TRANSISTORS IN SOT89** |
## **Features**
## **Mechanical Data**
- BVCEO > 45V, 60V & 80V
- IC = 1A Continuous Collector Current
- ICM = 2A Peak Pulse Current
- Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
- Gain Groups 10 and 16
- Epitaxial Planar Die Construction
- Complementary PNP Types: BCX51, 52, and 53
- Case: SOT89
- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Finish Leads. Solderable per MIL-STD-202 Method 208
- Weight: 0.055 grams (Approximate)
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/**
## **Applications**
- Medium Power Switching or Amplification Applications
- AF Driver and Output Stages
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SOT89<br>C<br>E<br>B C C<br>B<br>E<br>Top View<br>Top View Device Symbol<br>Pin-Out<br>**----- End of picture text -----**<br>
**Ordering Information** (Note 4)
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eG Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel<br>GG BCX54TA Standard BA GO 7 12 OO 1,000<br>C(O<br>BCX5410TA Standard BC 7 12 1,000<br>CG C(O<br>QC BCX5416TA Standard BD OC 7 12 OO 1,000<br>GG BCX5416-13R Standard BD 13 CO 12 CO 4,000<br>GG BCX55TA Standard BE G 7 C 12 QO 1,000<br>G BCX5510TA Standard BG 7 12 1,000<br>GG BCX5516TA Standard BM 7 GO 12 OO 1,000<br>C(O<br>BCX56TA Standard BH 7 12 1,000<br>CG C(O<br>QC BCX5610TA Standard BK OC 7 12 OO 1,000<br>GG BCX5616TA Standard BL 7 12 1,000<br>GG BCX5616TC Standard BL 13 GO 12 OO 4,000<br>C(O<br>GC BCX5410TC Standard BC GO 13 12 QO 4,000<br>BCX5416TC Standard BD 13 12 4,000<br>CG C(O<br>QC BCX54TC Standard BA OC 13 12 OO 4,000<br>GG BCX5510TC Standard BG 13 12 4,000<br>GG BCX5516TC Standard BM 13 GO 12 OO 4,000<br>C(O<br>GG BCX55TC Standard BE 13 12 4,000<br>GG BCX5610TC Standard BK 13 GO 12 OO 4,000<br>C(O<br>Pod BCX56TC Standard BH 13 12 4,000<br>**----- End of picture text -----**<br>
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
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BCX54 / 55 / 56 Datasheet Number: DS35369 Rev. 10 - 2
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**BCX54 /55 /56**
## **Marking Information**
SOT89
**xx** oro
xx = Product Type Marking Code, as follows: BCX54 = BA BCX55 = BE BCX56 = BH BCX5410 = BC BCX5510 = BG BCX5610 = BK BCX5416 = BD BCX5516 = BM BCX5616 = BL
## **Absolute Maximum Ratings** (@ TA = +25°C, unless otherwise specified.)
|**Absolute Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|**Symbol**|**BCX54**|**BCX55**|**BCX56**|**Unit**|
|Collector-Base Voltage|VCBO|45|60|100|V|
|Collector-Emitter Voltage|VCEO|45|60|80|V|
|Emitter-Base Voltage|VEBO|6|||V|
|Continuous Collector Current|IC|1|||A|
|Peak Pulse Collector Current|ICM|2||||
|Continuous Base Current|IB|100|||mA|
|Peak Pulse Base Current|IBM|200||||
## **Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 5)|PD|1|W|
||(Note 6)||1.5||
||(Note 7)||2.0||
|Thermal Resistance, Junction to Ambient Air|(Note 5)|RθJA|125|°C/W|
||(Note 6)||83||
||(Note 7)||60||
|Thermal Resistance, Junction to Lead|(Note 8)|RθJL|13|°C/W|
|Thermal Resistance, Junction to Case|(Note 9)|RθJC|27|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|
**ESD Ratings** (Note 10) **Characteristic Symbol Value Unit JEDEC Class** Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A ~~SSS~~ Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still-air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Thermal resistance from junction to the top of the case.
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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## **Thermal Characteristics and Derating Information**
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= 25° EEA| a xt __<br>= 120 Pere s AMT weevoor col<br>— rae i = Crain scone it<br>8 sof HTM TIM TTT PT BAU Te IPRS<br>ee<br>3a " eeaoeall aEO —mnSe insSe eeeGuttaSete: See fileee<br>an© Fb=02 TT meeeAe cinesi fue FT]: FerreeCnn consPEE CCEEEE<br>_ ao ame , _ fo-ooslit Tyg ee<br>3 Eee eT ee<br>Ee 1100p im 10m 100m 14 10 100 tk = 100u im 10m 100m 1 10 100 ik<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>oPR pp [=e]<br>a ee<br>2@ j~oJN| |) |<br>@ of | | NJ |]<br>{oo | |NK}<br>ag ee ee<br>go p}_yf, tt] | AY TT<br>Sofood<br>eens eee ee<br>2<br>= Oo 20 40 60 80 100 120 140 160<br>Temperature (°C)<br>Derating Curve<br>140.0 3<br>T =25°C<br>amb 2oz copper<br>120.0<br>2 3<br>2<br>OS ee ee<br>100.0<br>1oz copper<br>80.0<br>Pe 1 Lf<br>1oz copper<br>60.0 See eee<br>T =25°C<br>40.0 |Here}| tT | | | tt 2oz copper 0 LEE amb<br>0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500<br>Copper Area (sqmm) Copper Area (sqmm)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>
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## LTE
## **Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**<br>~~|~~||**Symbol**|**Min**<br>~~|~~|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base<br>Breakdown Voltage<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~ee~~|BCX54<br>BCX55<br>BCX56<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~ee~~|BVCBO<br>~~|~~<br>~~ee~~|45<br>~~|~~<br>~~|~~|—|—<br>~~eee~~|V<br>~~eee~~|IC= 100µA<br>~~eee~~|
||||60<br>~~|~~<br>~~|~~<br>~~|~~|||||
||||100<br>~~|~~<br>~~|~~<br>~~|~~<br>~~ee~~|||||
|Collector-Emitter<br>Breakdown Voltage (Note 11)<br>~~|~~<br>~~|~~<br>~~ee~~<br>~~|~~|BCX54<br>BCX55<br>BCX56<br>~~|~~<br>~~|~~<br>~~ee~~<br>~~|~~|BVCEO<br>~~ee~~<br>~~|~~|45<br>~~|~~<br>~~|~~<br>~~ee~~|—<br>~~CO~~|—<br>~~eee~~<br>~~CO~~|V<br>~~eee~~|IC= 10mA<br>~~eee~~|
||||60<br>~~|~~<br>~~ee~~<br>~~|~~|||||
||||80<br>~~ee~~<br>~~||~~|||||
|Emitter-Base Breakdown Voltage<br>~~ee~~<br>~~|~~<br>~~GG~~||BVEBO<br>~~ee~~<br>~~|~~<br>~~GG~~|6<br>~~ee~~<br>~~|~~<br>~~GG~~|—<br>~~GG~~<br>~~CO~~|—<br>~~eee~~<br>~~GG~~<br>~~CO~~|V<br>~~eee~~<br>~~GG~~|IE= 100µA<br>~~eee~~<br>~~GG~~|
|Collector Cut-Off Current||ICBO|—|—<br>~~CO~~|0.1<br>20<br>~~CO~~|µA|VCB= 30V<br>VCB= 30V, TA= +150°C|
|Emitter Cut-Off Current<br>~~ee~~||IEBO<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|20<br>~~ee~~|nA<br>~~ee~~|VEB= 5V<br>~~ee~~|
|Static Forward Current Transfer<br>Ratio (Note 11)<br>~~|~~|All versions<br>10 gain grp<br>16 gain grp<br>~~|~~|hFE|25<br>40<br>25|—<br>—<br>—|—<br>250<br>—|—|IC= 5mA, VCE= 2V<br>IC= 150mA, VCE= 2V<br>IC= 500mA, VCE= 2V|
||||63<br>~~a~~|—<br>~~ee~~|160||IC= 150mA, VCE= 2V<br>~~Pp~~|
||||100<br>~~a~~|—<br>~~ee~~|250||IC= 150mA, VCE= 2V<br>~~Pp~~|
|Collector-Emitter Saturation Voltage (Note 11)<br>~~|~~<br>~~en~~||VCE(sat)<br>~~en~~|—<br>~~a~~<br>~~en~~|—<br>~~ee~~<br>~~en~~|0.5<br>~~en~~|V<br>~~en~~|IC= 500mA, IB= 50mA<br>~~Pp~~<br>~~en~~|
|Base-Emitter Turn-On Voltage (Note 11)<br>~~es~~||VBE(on)<br>~~es~~|—<br>~~es~~|—<br>~~es~~|1.0<br>~~es~~|V<br>~~es~~|IC= 500mA, VCE= 2V<br>~~es~~|
|Transition Frequency||fT<br>~~GQ~~|150<br>~~GQ~~|—<br>~~GQ~~|—<br>~~GQ~~|MHz|IC= 50mA, VCE= 10V<br>f = 100MHz|
|Output Capacitance<br>~~en~~||Cobo<br>~~en~~<br>~~GQ~~|—<br>~~en~~<br>~~GQ~~|—<br>~~en~~<br>~~GQ~~|25<br>~~en~~<br>~~GQ~~|pF<br>~~en~~|VCB= 10V, f = 1MHz<br>~~en~~|
Note: 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
## **Typical Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)
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0.80.6 || | eesEp<br>EE<br>TS<br>0.4<br>0.2 Free<br>g<br>0<br>0 1 2 3 4 5<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Fig. 1 Typical Collector Current<br>vs. Collector-Emitter Voltage<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>
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250<br>200<br>HrBred<br>150 ni OU<br>\<br>10050 TMT |<br>0<br>0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A)<br>Fig. 2 Typical DC Current Gain vs. Collector Current<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>
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## **Typical Electrical Characteristics** (continued)
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**----- Start of picture text -----**<br>
1.2 Tonto<br>1.0 STMTAARTTT<br>0.8 Bsa [Nt] A [A]<br>Sct<br>0.6 poet a Al<br>Marre aca co<br>0.4 coSernNS ul at<br>Peelerm tm eeAM TIMETTITTI<br>0.2<br>CN TTT<br>CUM TTT Tee UI<br>0 TTT<br>0.0001 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A)<br>Fig. 3 Typical Base-Emitter Turn-On Voltage<br>vs. Collector Current<br>1.2 Tn nT<br>1.0 anererrea |AP<br>0.8 Mcrae<br>CU<br>0.6 CE [ao] ee<br>Thue Feel<br>0.4 cen a a<br>Se TT<br>ec<br>0.2<br>eet0 TT<br>0 CTT<br>0.0001 0.001 0.01 AT 0.1 1 10<br>IC, COLLECTOR CURRENT (A)<br>Fig. 5 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current<br>300<br>250<br>200<br>150 A<br>| ft<br>100<br>50 V CE = 5V<br>f = 100MHz<br>0<br>0 20 40 60 80 100<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 7 Typical Gain-Bandwidth Product<br>vs. Collector Current<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>BE(ON)<br>V<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(SAT)<br>V<br>, GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br>**----- End of picture text -----**<br>
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0.4 mT<br>ne<br>0.3<br>|<br>|<br>0.2 |<br>I<br>I<br>0.1<br>sesaff<br>iil UP<br>ee<br>0 Sriimrnvmntitill<br>0.0001 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A)<br>Fig. 4 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>140 CO ea<br>mY<br>120<br>100 CATT<br>TIM<br>80 CUTSIns<br>4 TT<br>60<br>alii<br>40 ae aT<br>20<br>PTTATM THM<br>0 TT<br>0.1 TUTTI 1 ott 10 He 100<br>VR, REVERSE VOLTAGE (V)<br>Fig. 6 Typical Capacitance Characteristics<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>CE(SAT)<br>V<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
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Package Outline Dimensions<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT89<br>D1<br>c<br>SOT89<br>- in. H Dim Min Max Typ<br>E A 1.40 1.60 1.50<br>B 0.50 0.62 0.56<br>B1 0.42 0.54 0.48<br>c 0.35 0.43 0.38<br>B1 L D 4.40 4.60 4.50<br>B<br>D1 1.62 1.83 1.733<br>aor e q === D2 1.61 1.81 1.71<br>D2 E 2.40 2.60 2.50<br>TOP VIEW<br>E2 2.05 2.35 2.20<br>e - - 1.50<br>H 3.95 4.25 4.10<br>— f H1 apqq FEE H1 2.63 2.93 2.78<br>E2 L 0.90 1.20 1.05<br>A L1 0.327 0.527 0.427<br>z 0.20 0.40 0.30<br>L1 All Dimensions in mm<br>ee D z 7<br>(ol: an ===<br>BOTTOM VIEW<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>8° (<br>4X)<br>R0.200<br>**----- End of picture text -----**<br>
## **SOT89**
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X2<br>Value<br>Dimensions<br>(in mm)<br>Y3 C 1.500<br>Y1 G 0.244<br>X 0.580<br>Y4 X G X1 0.760<br>X2 1.933<br>Y 1.730<br>Y Y2 Y1 3.030<br>Y2 1.500<br>| . — Ee Y3 0.770<br>X1 Y4 4.530<br>C<br>**----- End of picture text -----**<br>
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## **IMPORTANT NOTICE**
1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications.
3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities.
4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document.
5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application.
7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes.
8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use.
Copyright © 2021 Diodes Incorporated
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Updated at June 6, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →