BCX54,115

**==> picture [66 x 66] intentionally omitted <==**

## **AN10405** 

**Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat (BISS) transistors Rev. 01.00 — 06 January 2006 Application note** 

## **Document information** 

|**Info**|**Content**|
|---|---|
|**Keywords**|Bipolar transistors, BISS, low VCEsat, PBSS, power transistors|
|**Abstract**|This application note provides information on how to make use of a cost|
||saving opportunity by replacing older medium power and power|
||transistors by Philips’ low VCEsat(BISS) transistors. A cross reference|
||table provides a cross reference for leaded and SMD types. Further|
||spreadsheets show a comparison of the most common parameters|
||(VCEO, IC, VCEsatand hFE).|



**AN10405** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **Philips Semiconductors** 

|**Revision**|**history**||
|---|---|---|
|**Rev**|**Date**|**Description**|
|01|20060106|Initial document|



## **Contact information** 

For additional information, please visit: http://www.semiconductors.philips.com 

For sales office addresses, please send an email to: sales.addresses@www.semiconductors.philips.com 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note Rev. 01.00 — 06 January 2006** 

**2 of 20** 

**AN10405** 

**Philips Semiconductors** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **1. Introduction** 

This application note provides information on how to make use of a cost saving opportunity by replacing older medium power and power transistors by Philips’ low VCEsat (BISS) transistors[1] . A cross reference table provides a cross reference for leaded and SMD types. Further spreadsheets show a comparison of the most common parameters (VCEO, IC, VCEsat and hFE). 

## **2. Reduced power dissipation due to low saturation voltage** 

The low saturation voltage VCEsat, high collector current capability IC(max) and high current gain hFE make BISS transistors an excellent alternative to older medium power transistors in SOT54 (TO-92), SOT223 (SC-73) and SOT89 (SC-62) and power transistors in DPAK, TO-220 and TO-126. Particularly, for switching applications the transistors’ power dissipation is significantly lower due to a low collector-emitter saturation voltage as the following example shows: 

**Table 1: BISS transistors dissipate less power enabling to select smaller and cheaper packages** 

|**Example**|**Power transistor**|**BISS transistor**|
|---|---|---|
|Type|BD132|PBSS5350S|
|Package|SOT32 (TO-126)|SOT54 (TO-92)|
|IC|2 A|2 A|
|VCEsat|700 mV|300 mV|
|PC= VCEsatx IC|1400 mW|600 mW|
|hFE(min)|20|100|



Due to the lower power dissipation transistors with a smaller package can be selected. The PBSS5350S in SOT54 (TO-92) for example replaces a BD132 in TO-126. Keeping in mind that for discrete semiconductors package costs are higher than the cost for the silicon savings can be realized by using small SOT54 BISS transistors. Additionally, the circuit efficiency increases and less board space is necessary. 

Further, BISS transistors present a higher current gain hFE. As a result, less base current is required to control the transistor which takes load from the driving circuit. 

While for switching applications VCEsat is very low, the higher VCE for linear applications leads to a higher power dissipation. A replacement with BISS transistors is limited to 830 mW for leaded BISS transistors and to 1350 mW for surface mount applications (2 W for SOT223 transistors on 6 cm² collector mounting pad). 

> 1 More information on low VCEsat (BISS) transistors is given in the following application notes: AN10116: Breakthrough In Small Signal - Low VCEsat (BISS) Transistors and their Applications AN10393: BISS transistors and MEGA Schottky rectifiers – improved technologies for discrete semiconductors 

> © Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> 

**Application note** 

**Rev. 01.00 — 06 January 2006** 

**3 of 20** 

**AN10405** 

**Philips Semiconductors** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

Only a few BISS transistor types are necessary to replace numerous power transistors: 

- PBSS8110_ / PBSS9110_ 1 A / 100 V and 

- PBSS4350_ / PBSS5350_ 3 A / 50 V replace 

- power transistors with 1 – 3 A rated collector current. 

- PBSS4540Z / PBSS5540Z 5 A / 40 V and 

- PBSS302ND / PBSS302PD 4 A / 40 V replace 

- power transistors with 4 – 5 A rated collector current. 

Table 19: - Table 24: show the most common parameters of these types for reference. 

## **3. Common replacements** 

Many popular transistors are included in the cross reference table (Table 2:). Main cross reference data given in Table 3: – Table 18: are provided to confirm the selection. For SMD replacements these tables provide up to three alternatives with the same electrical but different thermal specifications. This enables to use the smallest package possible depending on the actual power dissipation. 

The BISS transistors in Table 2: are selected with focus on reducing the number of types. This implies that the provided replacement must not necessarily be the optimum solution with regard to the achievable power dissipation. 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note** 

**Rev. 01.00 — 06 January 2006** 

**4 of 20** 

**AN10405** 

**Philips Semiconductors** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **4. General selection process** 

For transistors not included in the cross reference table the following steps need to be done by comparing the data sheets: 

1. Limiting values, VCEO: BISS transistors must have equal or higher value. 

2. Limiting values, IC: BISS transistors must have equal or higher value. 

3. Characteristics, VCEsat(max): BISS transistors must have equal or lower value, pay attention to comparable operating conditions IC and IB. Notes to VCEsat: 

   - This parameter is mostly important for switching applications (i.e. not relevant for linear applications). 

   - The lower the ratio IC/IB the lower the saturation voltage but the higher the required base current. 

   - VCEsat values of BISS transistors are far below the values of power transistors. 

4. Characteristics, hFE(min): BISS transistors must have equal or higher value, pay attention to comparable operating conditions IC and VCE. Notes to hFE: - This parameter is important for linear and switching applications. 

   - The higher VCE the higher the current gain at a specified current. 

   - hFE values of BISS transistors are far above the values of power transistors. 

5. Calculate resulting power dissipation Ptot to select the most appropriate package. 

   - Switching applications: Ptot = VCEsat x IC + VBEsat x IB 

   - Linear applications: Ptot = VCE x IC + VBE x IB 

   - Notes to Ptot: 

   - For a rough estimation the input power dissipation (VBE(sat) x IB) can be neglected. 

   - For linear applications power dissipation may become an issue since VCE is significantly higher than VCEsat in switching applications. 

   - For the package selection the mounting conditions must be considered: 

SOT54 0.83 W SOT223[*) ] 1 – 1.35 W SOT89[*) ] 1 W SOT457[*) ] 0.6 W SOT23[*) ] 0.48 W *) Mounted on 1 cm² collector mounting pad 

- For switching applications a high power dissipation capability of the package is often not necessary anymore since the heat generation is much lower using BISS transistors due to the very low VCEsat values. 

- An even lower power dissipation due to lower VCEsat values can be achieved by selecting BISS transistors with a lower VCEO value. For example if the application requires only 20 V breakdown voltage, a 20 V transistor should be used instead of a 40 V transistor. 

For most of the medium power and power transistors the types given in Table 19:– Table 24: should be sufficient. If not please look for data sheets of transistors starting with “PBSS” on the Internet or contact your nearest Philips sales office. 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> 

**Application note** 

**Rev. 01.00 — 06 January 2006** 

**5 of 20** 

**AN10405** 

**Philips Semiconductors** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **5. Cross reference table for common replacements** 

**Table 2: Cross reference table for replacing (medium) power by BISS transistors** 

|original type|replacement|||||
|---|---|---|---|---|---|
||SOT54|SOT223|SOT457|SOT23|cross ref. data|
|BC635|PBSS8110S|PBSS8110Z|PBSS8110D|PBSS8110T|Table 3|
|BC636|PBSS9110S|PBSS9110Z|PBSS9110D|PBSS9110T|Table 11|
|BC637|PBSS8110S|PBSS8110Z|PBSS8110D|PBSS8110T|Table 3|
|BC638|PBSS9110S|PBSS9110Z|PBSS9110D|PBSS9110T|Table 11|
|BC639|PBSS8110S|PBSS8110Z|PBSS8110D|PBSS8110T|Table 3|
|BC640|PBSS9110S|PBSS9110Z|PBSS9110D|PBSS9110T|Table 11|
|BCP51|PBSS9110S|PBSS9110Z|PBSS9110D|PBSS9110T|Table 11|
|BCP52|PBSS9110S|PBSS9110Z|PBSS9110D|PBSS9110T|Table 11|
|BCP53|PBSS9110S|PBSS9110Z|PBSS9110D|PBSS9110T|Table 11|
|BCP54|PBSS8110S|PBSS8110Z|PBSS8110D|PBSS8110T|Table 3|
|BCP55|PBSS8110S|PBSS8110Z|PBSS8110D|PBSS8110T|Table 3|
|BCP56|PBSS8110S|PBSS8110Z|PBSS8110D|PBSS8110T|Table 3|
|BCX51|PBSS9110S|PBSS9110Z|PBSS9110D|PBSS9110T|Table 11|
|BCX52|PBSS9110S|PBSS9110Z|PBSS9110D|PBSS9110T|Table 11|
|BCX53|PBSS9110S|PBSS9110Z|PBSS9110D|PBSS9110T|Table 11|
|BCX54|PBSS8110S|PBSS8110Z|PBSS8110D|PBSS8110T|Table 3|
|BCX55|PBSS8110S|PBSS8110Z|PBSS8110D|PBSS8110T|Table 3|
|BCX56|PBSS8110S|PBSS8110Z|PBSS8110D|PBSS8110T|Table 3|
|BD131|PBSS4350S|PBSS4350Z|PBSS4350D||Table 7|
|BD132|PBSS5350S|PBSS5350Z|PBSS5350D||Table 15|
|BD135|PBSS4350S|PBSS4350Z|PBSS4350D||Table 5|
|BD136|PBSS5350S|PBSS5350Z|PBSS5350D||Table 13|
|BD137|PBSS4350S|PBSS4350Z|PBSS4350D||Table 5|
|BD138|PBSS5350S|PBSS5350Z|PBSS5350D||Table 13|
|BD139|PBSS4350S|PBSS4350Z|PBSS4350D||Table 5|
|BD140|PBSS5350S|PBSS5350Z|PBSS5350D||Table 13|
|BD329|PBSS4350S|PBSS4350Z|PBSS4350D||Table 8|
|BD330|PBSS5350S|PBSS5350Z|PBSS5350D||Table 16|
|BD433||PBSS4540Z|PBSS302ND||Table 10|
|BD434||PBSS5540Z|PBSS302PD||Table 18|
|BD435||PBSS4540Z|PBSS302ND||Table 10|
|BD436||PBSS5540Z|PBSS302PD||Table 18|
|KSH200||PBSS4540Z|||Table 9|
|KSH210||PBSS5540Z|||Table 17|
|KSH31|PBSS4350S|PBSS4350Z|PBSS4350D||Table 6|
|KSH32|PBSS5350S|PBSS5350Z|PBSS5350D||Table 14|
|MJD148||PBSS4540Z|PBSS302ND||Table 10|



© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note** 

**Rev. 01.00 — 06 January 2006** 

**6 of 20** 

**AN10405** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **Philips Semiconductors** 

|original type|replacement|||||
|---|---|---|---|---|---|
||SOT54|SOT223|SOT457|SOT23|cross ref. data|
|MJD200||PBSS4540Z|||Table 9|
|MJD210||PBSS5540Z|||Table 17|
|MJD31|PBSS4350S|PBSS4350Z|PBSS4350D||Table 6|
|MJD32|PBSS5350S|PBSS5350Z|PBSS5350D||Table 14|
|TIP29|PBSS8110S|PBSS8110Z|PBSS8110D|PBSS8110T|Table 4|
|TIP29A|PBSS8110S|PBSS8110Z|PBSS8110D|PBSS8110T|Table 4|
|TIP29B|PBSS8110S|PBSS8110Z|PBSS8110D|PBSS8110T|Table 4|
|TIP29C|PBSS8110S|PBSS8110Z|PBSS8110D|PBSS8110T|Table 4|
|TIP30|PBSS9110S|PBSS9110Z|PBSS9110D|PBSS9110T|Table 12|
|TIP30A|PBSS9110S|PBSS9110Z|PBSS9110D|PBSS9110T|Table 12|
|TIP30B|PBSS9110S|PBSS9110Z|PBSS9110D|PBSS9110T|Table 12|
|TIP30C|PBSS9110S|PBSS9110Z|PBSS9110D|PBSS9110T|Table 12|
|TIP31|PBSS4350S|PBSS4350Z|PBSS4350D||Table 6|
|TIP32|PBSS5350S|PBSS5350Z|PBSS5350D||Table 14|



© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note** 

**Rev. 01.00 — 06 January 2006** 

**7 of 20** 

**AN10405** 

**Philips Semiconductors** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **6. Basic cross reference data, NPN transistors** 

## **Table 3:** 

|||
|---|---|
||original type<br>leaded<br>SMD<br>replacement<br>leaded<br>SMD|
|**type**|**BC635**<br>**BC637**<br>**BC639**<br>**BCP54**<br>**BCP55**<br>**BCP56**<br>**BCX54**<br>**BCX55**<br>**BCX56**<br>**PBSS8110S**<br>**PBSS8110D**<br>**PBSS8110T**|
|package|SOT54<br>SOT223<br>SOT89<br>SOT54<br>SOT457<br>SOT23|
|Ptot|830 mW<br>1000 mW<br>*)<br>850 mW<br>*)<br>830 mW<br>600 mW<br>*)<br>480 mW<br>*)|
|||
|VCEO|45 / 60 / 80 V<br>100 V|
|IC|1 A<br>1 A|
|VCEsat(max)|500 mV<br>@ IC= 0,5 A, IB= 50 mA<br>120 mV<br>@ IC= 0,5 A, IB= 50 mA|
|hFE(min)|63<br>@ IC= 0,15 A, VCE= 2 V<br>150<br>@ IC= 0,25 A, VCE= 10 V|
||40<br>@ IC= 0,5 A, VCE= 2 V<br>100<br>@ IC= 0,5 A, VCE= 10 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

2 

## **Table 4:** 

|||
|---|---|
||original type<br>leaded<br>replacement<br>leaded<br>SMD|
|**type**|**TIP29**<br>**TIP29A**<br>**TIP29B**<br>**TIP29C**<br>**PBSS8110S**<br>**PBSS8110Z**<br>**PBSS8110T**|
|package|TO-220AB<br>SOT54<br>SOT223<br>SOT23|
|Ptot|2000 mW<br>830 mW<br>1000 mW<br>*)<br>480 mW<br>*)|
|||
|VCEO|40 / 60 /<br>80 / 100 V<br>100 V|
|IC|1 A<br>1 A|
|VCEsat(max)|700 mV<br>@ IC= 1 A, IB= 125 mA<br>200 mV<br>@ IC= 1 A, IB= 100 mA|
|hFE(min)|40<br>@ IC= 0,2 A, VCE= 4 V<br>150<br>@ IC= 0,25 A, VCE= 10 V|
||15<br>@ IC= 1 A, VCE= 4 V<br>80<br>@ IC= 1 A, VCE= 10 V|
|*)|<br>2|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note** 

**Rev. 01.00 — 06 January 2006** 

**8 of 20** 

**AN10405** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **Philips Semiconductors** 

## **Table 5:** 

||original type|||replacement||||||
|---|---|---|---|---|---|---|---|---|---|
||leaded|||leaded||SMD||||
||**BD135**|||||||||
|**type**|**BD137**||**PBSS4350S**|||**PBSS4350Z**||**PBSS4350D**||
||**BD139**|||||||||
|package|SOT32 (TO-126)||SOT54|||SOT223||SOT457||
|Ptot|1250 mW||830 mW|||1350 mW|*)|600 mW|*)|
|||||||||||
|VCEO|45 / 60 / 80 V|||50 V||||||
|IC|1,5 A|||3 A||||||
|VCEsat(max)|500 mV|@ IC= 0,5 A, IB= 50 mA|90 mV|||@ IC= 0,5 A, IB= 50 mA||||
|hFE(min)|25|@ IC= 0,5 A, VCE= 2 V|200|||@ IC= 0,5 A, VCE= 2 V||||
|*)|||||2|||||



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

## **Table 6:** 

|||
|---|---|
||original type<br>leaded<br>SMD<br>replacement<br>leaded<br>SMD|
|**type**|**TIP31**<br>**MJD31**<br>**KSH31**<br>**PBSS4350S**<br>**PBSS4350Z**<br>**PBSS4350D**|
|package|TO-220<br>TO-252<br>DPAK<br>SOT54<br>SOT223<br>SOT457|
|Ptot|2000 mW<br>1560 mW<br>830 mW<br>1350 mW<br>*)<br>600 mW<br>*)|
|||
|VCEO|40 V<br>50 V|
|IC|3 A<br>3 A|
|VCEsat(max)|1200 mV<br>@ IC= 3 A, IB= 375 mA<br>290 mV<br>@ IC= 2 A, IB= 200 mA|
|hFE(min)|25<br>@ IC= 1 A, VCE= 4 V<br>200<br>@ IC= 1 A, VCE= 2 V|
||10<br>@ IC= 3 A, VCE= 4 V<br>100<br>@ IC= 2 A, VCE= 2 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

2 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> 

**Application note** 

**Rev. 01.00 — 06 January 2006** 

**9 of 20** 

**AN10405** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **Philips Semiconductors** 

## **Table 7:** 

||original type<br>leaded<br>replacement<br>leaded<br>SMD|
|---|---|
|**type**|**BD131**<br>**PBSS4350S**<br>**PBSS4350Z**<br>**PBSS4350D**|
|package|SOT32<br>(TO-126)<br>SOT54<br>SOT223<br>SOT457|
|Ptot|830 mW<br>1350 mW<br>*)<br>600 mW<br>*)|
|||
|VCEO|45 V<br>50 V|
|IC|3 A<br>3 A|
|VCEsat(max)|300 mV<br>@ IC= 0,5 A, IB= 50 mA<br>90 mV<br>@ IC= 0,5 A, IB= 50 mA|
||700 mV<br>@ IC= 2 A, IB= 200 mA<br>290 mV<br>@ IC= 2 A, IB= 200 mA|
|hFE(min)|40<br>@ IC= 0,5 A, VCE= 12 V<br>200<br>@ IC= 0,5 A, VCE= 2 V|
||20<br>@ IC= 2 A, VCE= 1 V<br>100<br>@ IC= 2 A, VCE= 2 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

2 

## **Table 8:** 

|||
|---|---|
||original type<br>leaded<br>replacement<br>leaded<br>SMD|
|**type**|**BD329**<br>**PBSS4350S**<br>**PBSS4350Z**<br>**PBSS4350D**|
|package|SOT32<br>(TO-126)<br>SOT54<br>SOT223<br>SOT457|
|Ptot|830 mW<br>1350 mW<br>*)<br>600 mW<br>*)|
|||
|VCEO|20 V<br>50 V|
|IC|3 A<br>3 A|
|VCEsat(max)|500 mV<br>@ IC= 2 A, IB= 200 mA<br>290 mV<br>@ IC= 2 A, IB= 200 mA|
|hFE(min)|85<br>@ IC= 0,5 A, VCE= 1 V<br>200<br>@ IC= 0,5 A, VCE= 2 V|
||40<br>@ IC= 2 A, VCE= 1 V<br>100<br>@ IC= 2 A, VCE= 2 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

2 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note** 

**Rev. 01.00 — 06 January 2006** 

**10 of 20** 

**AN10405** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **Philips Semiconductors** 

## **Table 9:** 

||original type<br>SMD<br>replacement<br>SMD|
|---|---|
|**type**|**MJD200**<br>**KSH200**<br>**PBSS4540Z**|
|package|TO-252<br>DPAK<br>SOT223|
|Ptot|1400 mW<br>1350 mW<br>*)|
|||
|VCEO|25 V<br>40 V|
|IC|5 A<br>5 A|
|VCEsat(max)|300 mV<br>@ IC= 0,5 A, IB= 50 mA<br>90 mV<br>@ IC= 0,5 A, IB= 50 mA|
||750 mV<br>@ IC= 2 A, IB= 200 mA<br>150 mV<br>@ IC= 2 A, IB= 200 mA|
||1800 mV<br>@ IC= 5 A, IB= 1000 mA<br>355 mV<br>@ IC= 5 A, IB= 500 mA|
|hFE(min)|70<br>@ IC= 0,5 A, VCE= 1 V<br>300<br>@ IC= 0,5 A, VCE= 2 V|
||45<br>@ IC= 2 A, VCE= 1 V<br>250<br>@ IC= 2 A, VCE= 2 V|
||10<br>@ IC= 5 A, VCE= 2 V<br>100<br>@ IC= 5 A, VCE= 2 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

2 

## **Table 10:** 

||original type<br>leaded<br>SMD<br>replacement<br>SMD|
|---|---|
|**type**|**BD433**<br>**BD435**<br>**MJD148**<br>**PBSS4540Z**<br>**PBSS302ND**|
|package|TO-126<br>TO-252<br>DPAK<br>SOT223<br>SOT457|
|Ptot|1750 mW<br>1350 mW<br>*)<br>600 mW<br>*)|
|||
|VCEO|22 / 32 V<br>45 V<br>40 V<br>40 V|
|IC|4 A<br>4 A<br>5 A<br>4 A|
|||
|VCEsat(max)|500 mV<br>@ IC= 2 A, IB= 200 mA<br>150 mV<br>180 mV<br>@ IC= 2 A, IB= 200 mA|
|hFE(min)|85<br>@ IC= 0,5 A, VCE= 1 V<br>300<br>300<br>@ IC= 0,5 A, VCE= 2 V|
||50<br>@ IC= 2 A, VCE= 1 V<br>250<br>250<br>@ IC= 2 A, VCE= 2 V|
|*)|<br>2|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note** 

**Rev. 01.00 — 06 January 2006** 

**11 of 20** 

**AN10405** 

**Philips Semiconductors** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **7. Basic cross reference data, PNP transistors** 

## **Table 11:** 

|||
|---|---|
||original type<br>leaded<br>SMD<br>replacement<br>leaded<br>SMD|
|**type**|**BC636**<br>**BC638**<br>**BC640**<br>**BCP51**<br>**BCP52**<br>**BCP53**<br>**BCX51**<br>**BCX52**<br>**BCX53**<br>**PBSS9110S**<br>**PBSS9110D**<br>**PBSS9110T**|
|package|SOT54<br>SOT223<br>SOT89<br>SOT54<br>SOT457<br>SOT23|
|Ptot|830 mW<br>1000 mW<br>*)<br>850 mW<br>*)<br>830 mW<br>550 mW<br>*)<br>480 mW<br>*)|
|||
|VCEO|45 / 60 / 80 V<br>100 V|
|IC|1 A<br>1 A|
|VCEsat(max)|500 mV<br>@ IC= 0,5 A, IB= 50 mA<br>120 mV<br>@ IC= 0,5 A, IB= 50 mA|
|hFE(min)|63<br>@ IC= 0,15 A, VCE= 2 V<br>150<br>@ IC= 0,25 A, VCE= 5 V|
||40<br>@ IC= 0,5 A, VCE= 2 V<br>100<br>@ IC= 0,5 A, VCE= 5 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

2 

## **Table 12:** 

||original type<br>leaded<br>replacement<br>leaded<br>SMD|
|---|---|
|**type**|**TIP30**<br>**TIP30A**<br>**TIP30B**<br>**TIP30C**<br>**PBSS9110S**<br>**PBSS9110Z**<br>**PBSS9110T**|
|package|TO-220AB<br>SOT54<br>SOT223<br>SOT23|
|Ptot|2000 mW<br>830 mW<br>1000 mW<br>*)<br>480 mW<br>*)|
|||
|VCEO|40 / 60 /<br>80 / 100 V<br>100 V|
|IC|1 A<br>1 A|
|VCEsat(max)|700 mV<br>@ IC= 1 A, IB= 125 mA<br>320 mV<br>@ IC= 1 A, IB= 100 mA|
|hFE(min)|40<br>@ IC= 0,2 A, VCE= 4 V<br>150<br>@ IC= 0,25 A, VCE= 5 V|
||15<br>@ IC= 1 A, VCE= 4 V<br>125<br>@ IC= 1 A, VCE= 5 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

2 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note** 

**Rev. 01.00 — 06 January 2006** 

**12 of 20** 

**AN10405** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **Philips Semiconductors** 

## **Table 13:** 

||original type|||replacement||||||
|---|---|---|---|---|---|---|---|---|---|
||leaded|||leaded||SMD||||
|**type**|**BD136**|||||||||
||**BD138**||**PBSS5350S**|||**PBSS5350Z**||**PBSS5350D**||
||**BD140**|||||||||
|package|SOT32|||SOT54||SOT223||SOT457||
||(TO-126)|||||||||
|Ptot|1250 mW||830 mW|||1350 mW|*)|600 mW|*)|
|||||||||||
|VCEO|45 / 60 / 80 V|||50 V||||||
|IC|1,5 A|||3 A||||||
|VCEsat(max)|500 mV|@ IC= 0,5 A, IB= 50 mA|100 mV|||@ IC= 0,5 A, IB= 50 mA||||
|hFE(min)|25|@ IC= 0,5 A, VCE= 2 V|200|||@ IC= 0,5 A, VCE= 2 V||||
|*)|||||2|||||



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

## **Table 14:** 

|||
|---|---|
||original type<br>leaded<br>SMD<br>replacement<br>leaded<br>SMD|
|**type**|**TIP32**<br>**MJD32**<br>**KSH32**<br>**PBSS5350S**<br>**PBSS5350Z**<br>**PBSS5350D**|
|package|TO-220<br>TO-252<br>DPAK<br>SOT54<br>SOT223<br>SOT457|
|Ptot|2000 mW<br>1560 mW<br>830 mW<br>1350 mW<br>*)<br>600 mW<br>*)|
|||
|VCEO|40 V<br>50 V|
|IC|3 A<br>3 A|
|VCEsat(max)|1200 mV<br>@ IC= 3 A, IB= 375 mA<br>300 mV<br>@ IC= 2 A, IB= 200 mA|
|hFE(min)|25<br>@ IC= 1 A, VCE= 4 V<br>200<br>@ IC= 1 A, VCE= 2 V|
||10<br>@ IC= 3 A, VCE= 4 V<br>100<br>@ IC= 2 A, VCE= 2 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

2 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note** 

**Rev. 01.00 — 06 January 2006** 

**13 of 20** 

**AN10405** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **Philips Semiconductors** 

## **Table 15:** 

||original type<br>leaded<br>replacement<br>leaded<br>SMD|
|---|---|
|**type**|**BD132**<br>**PBSS5350S**<br>**PBSS5350Z**<br>**PBSS5350D**|
|package|SOT32<br>(TO-126)<br>SOT54<br>SOT223<br>SOT457|
|Ptot|830 mW<br>1350 mW<br>*)<br>600 mW<br>*)|
|||
|VCEO|45 V<br>50 V|
|IC|3 A<br>3 A|
|VCEsat(max)|300 mV<br>@ IC= 0,5 A, IB= 50 mA<br>100 mV<br>@ IC= 0,5 A, IB= 50 mA|
||700 mV<br>@ IC= 2 A, IB= 200 mA<br>300 mV<br>@ IC= 2 A, IB= 200 mA|
|hFE(min)|40<br>@ IC= 0,5 A, VCE= 12 V<br>200<br>@ IC= 0,5 A, VCE= 2 V|
||20<br>@ IC= 2 A, VCE= 1 V<br>100<br>@ IC= 2 A, VCE= 2 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

2 

## **Table 16:** 

|||
|---|---|
||original type<br>leaded<br>replacement<br>leaded<br>SMD|
|**type**|**BD330**<br>**PBSS5350S**<br>**PBSS5350Z**<br>**PBSS5350D**|
|package|SOT32<br>(TO-126)<br>SOT54<br>SOT223<br>SOT457|
|Ptot|830 mW<br>1350 mW<br>*)<br>600 mW<br>*)|
|||
|VCEO|20 V<br>50 V|
|IC|3 A<br>3 A|
|VCEsat(max)|500 mV<br>@ IC= 2 A, IB= 200 mA<br>300 mV<br>@ IC= 2 A, IB= 200 mA|
|hFE(min)|85<br>@ IC= 0,5 A, VCE= 1 V<br>200<br>@ IC= 0,5 A, VCE= 2 V|
||40<br>@ IC= 2 A, VCE= 1 V<br>100<br>@ IC= 2 A, VCE= 2 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

2 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note** 

**Rev. 01.00 — 06 January 2006** 

**14 of 20** 

**AN10405** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **Philips Semiconductors** 

## **Table 17:** 

||original type<br>SMD<br>replacement<br>SMD|
|---|---|
|**type**|**MJD210**<br>**KSH210**<br>**PBSS5540Z**|
|package|TO-252<br>DPAK<br>SOT223|
|Ptot|1400 mW<br>1350 mW<br>*)|
|||
|VCEO|25 V<br>40 V|
|IC|5 A<br>5 A|
|VCEsat(max)|300 mV<br>@ IC= 0,5 A, IB= 50 mA<br>120 mV<br>@ IC= 0,5 A, IB= 50 mA|
||750 mV<br>@ IC= 2 A, IB= 200 mA<br>160 mV<br>@ IC= 2 A, IB= 200 mA|
||1800 mV<br>@ IC= 5 A, IB= 1000 mA<br>375 mV<br>@ IC= 5 A, IB= 500 mA|
|hFE(min)|70<br>@ IC= 0,5 A, VCE= 1 V<br>250<br>@ IC= 0,5 A, VCE= 2 V|
||45<br>@ IC= 2 A, VCE= 1 V<br>150<br>@ IC= 2 A, VCE= 2 V|
||10<br>@ IC= 5 A, VCE= 2 V<br>50<br>@ IC= 5 A, VCE= 2 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

2 

## **Table 18:** 

|||
|---|---|
||original type<br>SMD<br>replacement<br>SMD|
|**type**|**BD434**<br>**BD436**<br>**PBSS5540Z**<br>**PBSS302PD**|
|package|TO-126<br>SOT223<br>SOT457|
|Ptot|1350 mW<br>*)<br>600 mW<br>*)|
|||
|VCEO|22 / 32 V<br>40 V<br>40 V|
|IC|4 A<br>5 A<br>4 A|
|VCEsat(max)|500 mV<br>@ IC= 2 A, IB= 200 mA<br>160 mV<br>180 mV<br>@ IC= 2 A, IB= 200 mA|
|hFE(min)|85<br>@ IC= 0,5 A, VCE= 1 V<br>250<br>200<br>@ IC= 0,5 A, VCE= 2 V|
||50<br>@ IC= 2 A, VCE= 1 V<br>150<br>175<br>@ IC= 2 A, VCE= 2 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 

2 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note** 

**Rev. 01.00 — 06 January 2006** 

**15 of 20** 

**AN10405** 

**Philips Semiconductors** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **8. Basic data on the BISS transistors** 

## **Table 19: 1 A / 100 V NPN BISS transistors** 

|||
|---|---|
||leaded<br>SMD|
|**type**|**PBSS8110S**<br>**PBSS8110D**<br>**PBSS8110T**|
|package|SOT54<br>SOT457<br>SOT23|
|Ptot|830 mW<br>600 mW<br>*)<br>480 mW<br>*)|
|||
|VCEO|100 V|
|IC|1 A|
|VCEsat(max)|120 mV<br>@ IC= 0,5 A, IB= 50 mA|
||200 mV<br>@ IC= 1 A, IB= 100 mA|
|hFE(min)|150<br>@ IC= 0,25 A, VCE= 10 V|
||100<br>@ IC= 0,5 A, VCE= 10 V|
||80<br>@ IC= 1 A, VCE= 10 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 

## **Table 20: 3 A / 50 V NPN BISS transistors** 

|||
|---|---|
||leaded<br>SMD|
|**type**|**PBSS4350S**<br>**PBSS4350Z**<br>**PBSS4350D**|
|package|SOT54<br>SOT223<br>SOT457|
|||
|Ptot|830 mW<br>1350 mW<br>*)|
|VCEO|50 V|
|IC|3 A|
|VCEsat(max)|90 mV<br>@ IC= 0,5 A, IB= 50 mA|
||290 mV<br>@ IC= 2 A, IB= 200 mA|
|hFE(min)|200<br>@ IC= 0,5 A, VCE= 2 V|
||200<br>@ IC= 1 A, VCE= 2 V|
||100<br>@ IC= 2 A, VCE= 2 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note** 

**Rev. 01.00 — 06 January 2006** 

**16 of 20** 

**AN10405** 

**Philips Semiconductors** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

**Table 21: 4 – 5 A / 40 V NPN BISS transistors** 

||SMD|
|---|---|
|**type**|**PBSS4540Z**<br>**PBSS302ND**|
|package|SOT223<br>SOT457|
|Ptot|1350 mW<br>*)<br>600 mW<br>*)|
|||
|VCEO|40 V<br>40 V|
|IC|5 A<br>4 A|
|VCEsat(max)|90 mV<br>IC= 0,5 A, IB= 50 mA|
||150 mV<br>180 mV<br>IC= 2 A, IB= 200 mA|
||355 mV<br>-<br>IC= 5 A, IB= 500 mA|
|hFE(min)|300<br>300<br>IC= 0,5 A, VCE= 2 V|
||250<br>250<br>IC= 2 A, VCE= 2 V|
||100<br>-<br>IC= 5 A, VCE= 2 V|



**Table 22: 1 A / 100 V PNP BISS transistors** 

|||
|---|---|
||leaded<br>SMD|
|**type**|**PBSS9110S**<br>**PBSS9110D**<br>**PBSS9110T**|
|package|SOT54<br>SOT457<br>SOT23|
|Ptot|830 mW<br>550 mW<br>*)<br>480 mW<br>*)|
|||
|VCEO|100 V|
|IC|1 A|
|VCEsat(max)|120 mV<br>@ IC= 0,5 A, IB= 50 mA|
||320 mV<br>@ IC= 1 A, IB= 100 mA|
|hFE(min)|150<br>@ IC= 0,25 A, VCE= 5 V|
||150<br>@ IC= 0,5 A, VCE= 5 V|
||125<br>@ IC= 1 A, VCE= 5 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note** 

**Rev. 01.00 — 06 January 2006** 

**17 of 20** 

**AN10405** 

**Philips Semiconductors** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

**Table 23: 3 A / 50 V PNP BISS transistors** 

||leaded<br>SMD|
|---|---|
|**type**|**PBSS5350S**<br>**PBSS5350Z**<br>**PBSS5350D**|
|package|SOT54<br>SOT223<br>SOT457|
|||
|Ptot|830 mW<br>1350 mW<br>*)|
|VCEO|50 V|
|IC|3 A|
|VCEsat(max)|100 mV<br>@ IC= 0,5 A, IB= 50 mA|
||mV<br>@ IC= 2 A, IB= 200 mA|
|hFE(min)|200<br>@ IC= 0,5 A, VCE= 2 V|
||200<br>@ IC= 1 A, VCE= 2 V|
||100<br>@ IC= 2 A, VCE= 2 V|



*) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 

## **Table 24: 4 – 5 A / 40 V PNP BISS transistors** 

|||
|---|---|
||SMD|
|**type**|**PBSS5540Z**<br>**PBSS302PD**|
|package|SOT223<br>SOT457|
|Ptot|1350 mW<br>*)<br>600 mW<br>*)|
|||
|VCEO|40 V<br>40 V|
|IC|5 A<br>4 A|
|VCEsat(max)|120 mV<br>60 mV<br>@ IC= 0,5 A, IB= 50 mA|
||160 mV<br>180 mV<br>@ IC= 2 A, IB= 200 mA|
||375 mV<br>-<br>@ IC= 5 A, IB= 500 mA|
|hFE(min)|250<br>200<br>@ IC= 0,5 A, VCE= 2 V|
||150<br>175<br>@ IC= 2 A, VCE= 2 V|
||50<br>-<br>@ IC= 5 A, VCE= 2 V|



© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> **Application note** 

**Rev. 01.00 — 06 January 2006** 

**18 of 20** 

**AN10405** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **Philips Semiconductors** 

## **9. Disclaimers** 

**Life support —** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. 

**Right to make changes —** Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products 

are free from patent, copyright, or mask work right infringement, unless otherwise specified. 

**Application information —** Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

## **10. Trademarks** 

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 

© Koninklijke Philips Electronics N.V. 2005. All rights reserved. 

<12NC> 

**Application note** 

**Rev. 01.00 — 06 January 2006** 

**19 of 20** 

**AN10405** 

**Philips Semiconductors** 

**Replacing power transistors by low VCEsat (BISS) transistors** 

## **11. Contents** 

|**11.**|**Contents**|
|---|---|
|**1.**|**Introduction .........................................................3**|
|**2.**|**Reduced power dissipation due to low**|
||**saturation voltage ...............................................3**|
|**3.**|**Common replacements.......................................4**|
|**4.**|**General selection process..................................5**|
|**5.**|**Cross reference table for common**|
||**replacements.......................................................6**|
|**6.**|**Basic cross reference data, NPN transistors....8**|
|**7.**|**Basic cross reference data, PNP transistors..12**|
|**8.**|**Basic data on the BISS transistors..................16**|
|**9.**|**Disclaimers ........................................................19**|
|**10.**|**Contents.............................................................20**|



## **© Koninklijke Philips Electronics N.V. 2005** 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

**Published in The Netherlands** 

**Date of release:06 January 2006 Document number: <12NC>**