BCX19LT1G

## BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN 

## General Purpose Transistors 

## **Voltage and Current are Negative for PNP Transistors** 

**SOT−23 (TO−236) CASE 318−08 STYLE 6** 

## **Features** 

- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS **PNP NPN** Compliant COLLECTOR COLLECTOR 3 3 **MAXIMUM RATINGS** 1 1 **Rating Symbol Value Unit** BASE BASE Collector − Emitter Voltage VCEO Vdc BCX17, BCX19 45 2 2 BCX18 25 EMITTER EMITTER Collector − Base Voltage VCBO Vdc BCX17, BCX19 50 BCX18 30 **MARKING DIAGRAM** Emitter − Base Voltage VEBO 5.0 Vdc ~~=~~ Collector Current − Continuous IC 500 mAdc XX M **THERMAL CHARACTERISTICS** 1 **Characteristic Symbol Max Unit** ~~———~~ Total Device Dissipation FR−5 Board PD 225 mW XX = T1, T2 or U1 (Note 1), TA = 25 ° C M = Date Code* Derate above 25 ° C 1.8 mW/ ° C = Pb−Free Package Thermal Resistance, (Note: Microdot may be in either location) Junction−to−Ambient R JA 556 ° C/W ~~rr~~ *Date Code orientation and/or overbar may Total Device Dissipation Alumina PD vary depending upon manufacturing location. Substrate, (Note 2) TA = 25 ° C 300 mW Derate above 25 ° C 2.4 mW/ ° C **ORDERING INFORMATION** Thermal Resistance, See detailed ordering and shipping information in the package Junction−to−Ambient R JA 417 ° C/W dimensions section on page 2 of this data sheet. ~~FE~~ Junction and Storage Temperature TJ, Tstg −55 to +150 ° C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

*Date Code orientation and/or overbar may vary depending upon manufacturing location. 

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 

1. FR−5 = 1.0 0.75 0.062 in. 

2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 1994 **November, 2016 − Rev. 9** 

**BCX17LT1/D** 

**BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|noted)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= 10 mAdc, IB= 0)<br>BCX17, BCX19, SBCX19<br>BCX18|V(BR)CEO|45<br>25|−<br>−|−<br>−|Vdc|
|Collector−Emitter Breakdown Voltage<br>(IC= 10�Adc, IC= 0)<br>BCX17, BCX19, SBCX19<br>BCX18|V(BR)CES|50<br>30|−<br>−|−<br>−|Vdc|
|Collector Cutoff Current<br>(VCB= 20 Vdc, IE= 0)<br>(VCB= 20 Vdc, IE= 0, TA= 150°C)|ICBO|−<br>−|−<br>−|100<br>5.0|nAdc<br>�Adc|
|Emitter Cutoff Current<br>(VEB= 5.0 Vdc, IC= 0)|IEBO|−|−|10|�Adc|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= 100 mAdc, VCE= 1.0 Vdc)<br>(IC= 300 mAdc, VCE= 1.0 Vdc)<br>(IC= 500 mAdc, VCE= 1.0 Vdc)|hFE|100<br>70<br>40|−<br>−<br>−|600<br>−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 500 mAdc, IB= 50 mAdc)|VCE(sat)|−|−|0.62|Vdc|
|Base−Emitter On Voltage<br>(IC= 500 mAdc, VCE= 1.0 Vdc)|VBE(on)|−|−|1.2|Vdc|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Specific Marking**|**Package**|**Shipping**†|
|BCX17LT1G|T1|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|NSVBCX17LT1G*|T1|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|BCX18LT1G|T2|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|BCX19LT1G|U1|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|SBCX19LT1G*|U1|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

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**2** 

**BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN** 

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1000<br>VCE = 1 V<br>T J = 25°C<br>100<br>10<br>0.1 1.0 10 100 1000<br>IC, COLLECTOR CURRENT (mA)<br>Figure 1. DC Current Gain<br>1.0 1.0<br>TJ = 25°C TA = 25°C VBE(sat) @ IC/IB = 10<br>0.8 0.8<br>VBE(on) @ VCE = 1 V<br>0.6 0.6<br>0.4 IC = 10 mA 100 mA 300 mA 500 mA 0.4<br>0.2 0.2<br>VCE(sat) @ IC/IB = 10<br>0 0<br>0.01 0.1 1 10 100 1 10 100 1000<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 2. Saturation Region Figure 3. “On” Voltages<br>100<br>+1<br>�VC for VCE(sat)<br>0<br>Cib<br>10<br>-1<br>Cob<br>-2 �VB for VBE<br>1<br>1 10 100 1000 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)<br>hFE, DC CURRENT GAIN<br>V, VOLTAGE (VOLTS)<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>C)°<br>C, CAPACITANCE (pF)<br>V, TEMPERATURE COEFFICIENTS (mV/<br>θ<br>**----- End of picture text -----**<br>


**Figure 4. Temperature Coefficients** 

**Figure 5. Capacitances** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>2 DATE 30 JAN 2018<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>“a 3 t = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>= T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM<br>1<br>2.90 i 0.903X XXX = Specific Device Code oo<br>M = Date Code<br>= Pb−Free Package<br>LO | cr ,<br>*This information is generic. Please refer to<br>3X 0.80 a) LL 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “ ”, |<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1<br>aes<br>ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>


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