BCW72LT1G

## BCW72LT1G, SBCW72LT1G 

## General Purpose Transistor **NPN Silicon** 

## **Features** 

- AEC−Q101 Qualified and PPAP Capable 

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- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 

**SOT−23 (TO−236) CASE 318−08 MAXIMUM RATINGS STYLE 6 Rating Symbol Value Unit** Collector−Emitter Voltage VCEO 45 Vdc COLLECTOR Collector−Base Voltage VCBO 50 Vdc 3 Emitter−Base Voltage VEBO 5.0 Vdc 1 Collector Current − Continuous IC 100 mAdc BASE **THERMAL CHARACTERISTICS** ~~Eg~~ **Characteristic Symbol Max Unit** 2 EMITTER Total Device Dissipation FR−5 Board, PD (Note 1) TA = 25C 225 mW Derate above 25C 1.8 mW/C **MARKING DIAGRAM** Thermal Resistance, Junction−to−Ambient R JA 556 C/W Total Device Dissipation PD Alumina Substrate, (Note 2) TDerate above 25C A = 25C 3002.4 mW/mWC K2 M Thermal Resistance, Junction−to−Ambient R JA 417 C/W 1 ~~=os~~ Junction and Storage Temperature TJ, Tstg −55 to +150 C K2 = Device Code Stresses exceeding Maximum Ratings may damage the device. Maximum M = Date Code* Ratings are stress ratings only. Functional operation above the Recommended = Pb−Free Package Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (Note: Microdot may be in either location) 1. FR−5 = 1.0 x 0.75 x 0.062 in. 

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 

*Date Code orientation and/or overbar may vary depending upon manufacturing location. **ORDERING INFORMATION Device Package Shipping**[†] BCW72LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) SBCW72LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) ~~=~~ 

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **BCW72LT1/D** 

**1** 

 Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. 4** 

## **BCW72LT1G, SBCW72LT1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= 2.0 mAdc, VEB= 0)|V(BR)CEO|45|−|−|Vdc|
|Collector−Emitter Breakdown Voltage<br>(IC= 2.0 mAdc, VEB= 0)|V(BR)CES|45|−|−|Vdc|
|Collector−Base Breakdown Voltage<br>(IC= 10�Adc, IE= 0)|V(BR)CBO|50|−|−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= 10�Adc, IC= 0)|V(BR)EBO|5.0|−|−|Vdc|
|Collector Cutoff Current<br>(VCB= 20 Vdc, IE= 0)<br>(VCB= 20 Vdc, IE= 0, TA= 100C)|ICBO|−<br>−|−<br>−|100<br>10|nAdc<br>�Adc|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= 2.0 mAdc, VCE= 5.0 Vdc)|hFE|200|−|450|−|
|Collector−Emitter Saturation Voltage<br>(IC= 10 mAdc, IB= 0.5 mAdc)<br>(IC= 50 mAdc, IB= 2.5 mAdc)|VCE(sat)|−<br>−|−<br>0.21|0.25<br>−|Vdc|
|Base−Emitter Saturation Voltage<br>(IC= 50 mAdc, IB= 2.5 mAdc)|VBE(sat)|−|0.85|−|Vdc|
|Base−Emitter On Voltage<br>(IC= 2.0 mAdc, VCE= 5.0 Vdc)|VBE(on)|0.6|−|0.75|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mAdc, VCE= 5.0 Vdc, f = 100 MHz)|fT|−|300|−|MHz|
|Output Capacitance<br>(IE= 0, VCB= 10 Vdc, f = 1.0 MHz)|Cobo|−|−|4.0|pF|
|Input Capacitance<br>(IE= 0, VCB= 10 Vdc, f = 1.0 MHz)|Cibo|−|9.0|−|pF|
|Noise Figure<br>(IC= 0.2 mAdc, VCE= 5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



## **EQUIVALENT SWITCHING TIME TEST CIRCUITS** 

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+�3.0 V +�3.0 V<br>300 n s +10.9 V 275 DUTY CYCLE = 2%10 < t1 < 500 �s t1 +10.9 V 275<br>DUTY CYCLE = 2%<br>10 k 10 k<br>0<br>-�0.5 V<br><1.0 ns CS < 4.0 pF* CS < 4.0 pF*<br>-�9.1 V 1N916<br><1.0 ns<br>*Total shunt capacitance of test jig and connectors<br>**----- End of picture text -----**<br>


**Figure 1. Turn−On Time** 

**Figure 2. Turn−Off Time** 

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**2** 

**BCW72LT1G, SBCW72LT1G** 

## **TYPICAL NOISE CHARACTERISTICS** 

(VCE = 5.0 Vdc, TA = 25C) 

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20 100<br>IC = 1.0 mA BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz<br>50<br>RS = 0 I C  = 1.0 mA RS �<br>300 �A 20 300 �A<br>10<br>10 100 �A<br>5.0<br>7.0 100 �A<br>2.0<br>5.0<br>1.0<br>3.0 10 �A 30 �A 0.5 30 �A<br>0.2 10 �A<br>2.0 0.1<br>10 20 50 100 200 500 1�k 2�k 5�k 10�k 10 20 50 100 200 500 1�k 2�k 5�k 10�k<br>f, FREQUENCY (Hz) f, FREQUENCY (Hz)<br>Figure 3. Noise Voltage Figure 4. Noise Current<br>NOISE FIGURE CONTOURS<br>(VCE = 5.0 Vdc, TA = 25C)<br>500�k 1�M<br>200�k BANDWIDTH = 1.0 Hz 500�k BANDWIDTH = 1.0 Hz<br>100�k 200�k<br>50�k 100�k<br>20�k 50�k<br>10�k 20�k<br>5�k 10�k<br>2.0 dB 1.0 dB<br>1�k2�k 3.0 dB 4.0 dB 6.0 dB 5�k2�k 2.0 dB 3.0 dB<br>10 dB<br>500 1�k<br>200 500 5.0 dB<br>100 200 8.0 dB<br>50 100<br>10 20 30 50 70 100 200 300 500 700 1�k 10 20 30 50 70 100 200 300 500 700 1�k<br>IC, COLLECTOR CURRENT (�A) IC, COLLECTOR CURRENT (�A)<br>Figure 5. Narrow Band, 100 Hz Figure 6. Narrow Band, 1.0 kHz<br>500�k<br>10 Hz to 15.7 kHz<br>200�k<br>100�k<br>50�k<br>Noise Figure is defined as:<br>20�k<br>en [2] � 4KTRS  � In  [2] RS [2] 1 � 2<br>10�k NF  � 20 log10<br>5�k 1.0 dB � 4KTRS �<br>en = Noise Voltage of the Transistor referred to the input. (Figure 3)<br>2�k 2.0 dB In = Noise Current of the Transistor referred to the input. (Figure 4)<br>1�k 3.0 dB K = Boltzman’s Constant (1.38 x 10 [−23]  j/K)<br>500 5.0 dB T = Temperature of the Source Resistance (K)<br>200 RS = Source Resistance (Ohms)<br>8.0 dB<br>100<br>50<br>10 20 30 50 70 100 200 300 500 700 1�k<br>IC, COLLECTOR CURRENT (�A)<br>en, NOISE VOLTAGE (nV) In, NOISE CURRENT (pA)<br>RS, SOURCE RESISTANCE (OHMS) RS, SOURCE RESISTANCE (OHMS)<br>RS, SOURCE RESISTANCE (OHMS)<br>**----- End of picture text -----**<br>


**Figure 7. Wideband** 

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**3** 

**BCW72LT1G, SBCW72LT1G** 

## **TYPICAL STATIC CHARACTERISTICS** 

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400<br>TJ = 125  C<br>200 25  C<br>-�55  C<br>100<br>80<br>60 VCE = 1.0 V<br>V CE  = 10 V<br>40<br>0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>IC, COLLECTOR CURRENT (mA)<br>Figure 8. DC Current Gain<br>1.0 100<br>TJ = 25  C TA = 25  C IB = 500 �A<br>PULSE WIDTH = 300 �s<br>0.8 80 DUTY CYCLE    2.0% 400 �A<br>IC = 1.0 mA 10 mA 50 mA 100 mA 300 �A<br>0.6 60<br>200 �A<br>0.4 40<br>100 �A<br>0.2 20<br>0 0<br>0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40<br>IB, BASE CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>Figure 9. Collector Saturation Region Figure 10. Collector Characteristics<br>1.4 1.6<br>T J  = 25  C *APPLIES for IC/IB   hFE/2<br>1.2<br>0.8<br>25  C to 125  C<br>1.0<br>*�VC for VCE(sat)<br>0<br>0.8 VBE(sat) @ IC/IB = 10 -55  C to 25  C<br>0.6<br>-�0.8<br>V BE(on)  @ V CE  = 1.0 V<br>0.4 25  C to 125  C<br>-�1.6<br>0.2 �VB for VBE -55  C to 25  C<br>VCE(sat) @ IC/IB = 10<br>0 -�2.4<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>FE<br>h     , DC CURRENT GAIN<br>IC, COLLECTOR CURRENT (mA)<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>C) <br>V, VOLTAGE (VOLTS)<br>V, TEMPERATURE COEFFICIENTS (mV/<br><br>**----- End of picture text -----**<br>


**Figure 11. “On” Voltages** 

**Figure 12. Temperature Coefficients** 

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**4** 

**BCW72LT1G, SBCW72LT1G** 

## **TYPICAL DYNAMIC CHARACTERISTICS** 

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300 1000<br>200 VCC = 3.0 V 700<br>TICJ/I = 25B = 10  C 500 ts<br>100 300<br>70<br>200<br>50<br>30 tr 100 tf<br>20 70<br>50<br>td @ VBE(off) = 0.5 Vdc<br>10 30 VCC = 3.0 V<br>7.0 IC/IB = 10<br>20<br>5.0 IB1 = IB2<br>TJ = 25  C<br>3.0 10<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 13. Turn−On Time Figure 14. Turn−Off Time<br>500 10<br>TJ = 25  C T J  = 25  C<br>f = 100 MHz 7.0 f = 1.0 MHz<br>300<br>VCE = 20 V 5.0 Cib<br>200 5.0 V<br>Cob<br>3.0<br>100 2.0<br>70<br>50 1.0<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50<br>IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 15. Current−Gain — Bandwidth Product Figure 16. Capacitance<br>20 200<br>VCE = 10 Vdc VCE = 10 Vdc<br>7.010 hfe   200 @ IC = 1.0 mA f = 1.0 kHzTA = 25  C 10070 f = 1.0 kHzTA = 25  C<br>5.0 50 hfe   200 @ IC = 1.0 mA<br>3.0 30<br>2.0 20<br>1.0 10<br>0.7 7.0<br>0.5 5.0<br>0.3 3.0<br>0.2 2.0<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>t, TIME (ns) t, TIME (ns)<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)T<br>) <br>hie, INPUT IMPEDANCE (k �<br>oe<br>h    , OUTPUT ADMITTANCE (   mhos)<br>**----- End of picture text -----**<br>


**Figure 17. Input Impedance** 

**Figure 18. Output Admittance** 

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**5** 

**BCW72LT1G, SBCW72LT1G** 

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1.0<br>0.7<br>D = 0.5<br>0.5<br>0.3<br>0.2<br>0.2<br>0.1<br>0.1<br>0.07 0.05 FIGURE 19A DUTY CYCLE, D = t1/t2<br>D CURVES APPLY FOR POWER<br>0.05 P(pk) PULSE TRAIN SHOWN<br>0.02<br>0.03 0.01 t 1 READ TIME AT tZ � JA(t) = r(t) �R � JA1 (SEE AN−569)<br>0.02 SINGLE PULSE t2 T J(pk)  − T A  = P (pk)  Z � JA(t)<br>0.01<br>0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k 20�k 50�k100�k<br>t, TIME (ms)<br>Figure 19. Thermal Response<br>10 [4] DESIGN NOTE: USE OF THERMAL RESPONSE DATA<br>V CC  = 30 Vdc<br>A train of periodical power pulses can be represented by the model<br>10 [3]<br>as shown in Figure 19A. Using the model and the device thermal<br>response the normalized effective transient thermal resistance of<br>10 [2] ICEO Figure 19 was calculated for various duty cycles.<br>To find Z � JA(t), multiply the value obtained from Figure 19 by the<br>10 [1] steady state value R � JA.<br>Example:<br>10 [0] I CBO The MPS3904 is dissipating 2.0 watts peak under the following<br>AND conditions:<br>ICEX @ VBE(off) = 3.0 Vdc t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)<br>10 [-1]<br>Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of<br>r(t) is 0.22.<br>10 [-2] The peak rise in junction temperature is therefore<br>-40 -20 0 TJ, JUNCTION TEMPERATURE (+20 +40 +60 +80 +100  C)+120 +140 +160 � T = r(t) x P(pk) x R � JA = 0.22 x 2.0 x 200 = 88C.<br>(NORMALIZED)<br>r(t) TRANSIENT THERMAL RESISTANCE<br>IC, COLLECTOR CURRENT (nA)<br>**----- End of picture text -----**<br>


For more information, see AN−569. 

**Figure 19A.** 

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400<br>100 �s<br>1.0 ms<br>200<br>10 �s<br>100 TC = 25  C 1.0 s<br>dc<br>60 T A  = 25  C<br>40 dc<br>20 T J  = 150  C<br>10 CURRENT LIMIT<br>THERMAL LIMIT<br>6.0<br>SECOND BREAKDOWN LIMIT<br>4.0<br>2.0 4.0 6.0 8.0 10 20 40<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. 

The data of Figure 20 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk)  150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

**Figure 20.** 

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**6** 

**BCW72LT1G, SBCW72LT1G** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AP 

- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 

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||||||||||
|---|---|---|---|---|---|---|---|---|
|D|2.|CONTROLLING DIMENSION: INCH.|
|3.|MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH|
|SEE VIEW C|THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM|
|3|THICKNESS OF BASE MATERIAL.|
|4.|DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,|
|PROTRUSIONS, OR GATE BURRS.|
|E|HE|
|MILLIMETERS|INCHES|
|DIM|MIN|NOM|MAX|MIN|NOM|MAX|
|c|
|A|0.89|1.00|1.11|0.035|0.040|0.044|
|1|2|
|A1|0.01|0.06|0.10|0.001|0.002|0.004|
|b|b|0.37|0.44|0.50|0.015|0.018|0.020|
|e|0.25|c|0.09|0.13|0.18|0.003|0.005|0.007|
|D|2.80|2.90|3.04|0.110|0.114|0.120|
|E|1.20|1.30|1.40|0.047|0.051|0.055|
|e|1.78|1.90|2.04|0.070|0.075|0.081|
|L|0.10|0.20|0.30|0.004|0.008|0.012|
|A|L1|0.35|0.54|0.69|0.014|0.021|0.029|
|H|E|2.10|2.40|2.64|0.083|0.094|0.104|
|L|0|−−−|10|0|−−−|10|
|A1|
|L1|STYLE 6:|
|VIEW C|PIN 1.2.|EMITTERBASE|
|3.|COLLECTOR|

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## **SOLDERING FOOTPRINT** 

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0.95<br>0.037<br>0.95<br>0.037<br>2.0<br>0.079<br>0.9<br>0.035<br>SCALE 10:1 mm<br>= (— inches )<br>0.8<br>0.031 Tb<br>**----- End of picture text -----**<br>


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**7**