BCW70LT1G

## BCW70LT1G 

## General Purpose Transistor 

## **PNP Silicon** 

## **Features** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**MAXIMUM RATINGS** 

|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Collector−Emitter Voltage<br>VCEO<br>−45<br>Vdc<br>Emitter−Base Voltage<br>VEBO<br>−5.0<br>Vdc<br>Collector Current − Continuous<br>IC<br>−100<br>mAdc<br>~~=~~|
|---|
|**THERMAL CHARACTERISTICS**|
|**Characteristic**<br>**Symbol**<br>**Max**<br>**Unit**|
|Total Device Dissipation FR-5 Board<br>PD<br>225<br>mW|
|(Note 1) TA= 25°C<br>Derate above 25°C<br>1.8<br>mW/°C|
|Thermal Resistance, Junction−to−Ambient<br>R JA<br>556<br>°C/W<br>Total Device Dissipation Alumina<br>Substrate, (Note 2) @TA= 25°C<br>Derate above 25°C<br>PD<br>300<br>2.4<br>mW<br>mW/°C<br>Thermal Resistance, Junction−to−Ambient<br>R JA<br>417<br>°C/W<br>Junction and Storage Temperature<br>TJ, Tstg<br>−55 to +150<br>°C<br>~~ee~~|
|Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be<br>assumed, damage may occur and reliability may be affected.<br>1. FR−5 = 1.0 x 0.75 x 0.062 in.|



2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina 

## @ **www.onsemi.com** 

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COLLECTOR<br>3<br>1<br>BASE<br>2<br>EMITTER<br>3<br>1<br>2<br>SOT−23 (TO−236)<br>CASE 318<br>STYLE 6<br>**----- End of picture text -----**<br>


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MARKING DIAGRAM<br>**----- End of picture text -----**<br>


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H2 M<br>1 os<br>H2 = Device Code<br>M = Date Code*<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


*Date Code orientation and/or overbar may vary depending upon manufacturing location. **ORDERING INFORMATION Device Package Shipping**[†] BCW70LT1G SOT−23 3000 / Tape & Reel (Pb−Free) ~~I~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 1999 **November, 2016 − Rev. 4** 

**BCW70LT1/D** 

## **BCW70LT1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage<br>(IC= −2.0 mAdc, IB= 0)|V(BR)CEO|−45|−|Vdc|
|Collector−Emitter Breakdown Voltage<br>(IC= −100�Adc, VEB= 0)|V(BR)CES|−50|−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= −10�Adc, IC= 0)|V(BR)EBO|−5.0|−|Vdc|
|Collector Cutoff Current<br>(VCB= −20 Vdc, IE= 0)<br>(VCB= −20 Vdc, IE= 0, TA= 100°C)|ICBO|−<br>−|−100<br>−10|nAdc<br>�Adc|
|**ON CHARACTERISTICS**|||||
|DC Current Gain<br>(IC= −2.0 mAdc, VCE= −5.0 Vdc)|hFE|215|500|−|
|Collector−Emitter Saturation Voltage<br>(IC= −10 mAdc, IB= −0.5 mAdc)|VCE(sat)|−|−0.3|Vdc|
|Base−Emitter On Voltage<br>(IC= −2.0 mAdc, VCE= −5.0 Vdc)|VBE(on)|−0.6|−0.75|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Output Capacitance<br>(IE= 0, VCB= −10 Vdc, f = 1.0 MHz)|Cobo|−|7.0|pF|
|Noise Figure<br>(IC= −0.2 mAdc, VCE= −5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|10|dB|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**2** 

**BCW70LT1G** 

## **TYPICAL NOISE CHARACTERISTICS** 

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(VCE = − 5.0 Vdc, TA = 25 ° C)<br>**----- End of picture text -----**<br>


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10 1.0<br>BANDWIDTH = 1.0 Hz 7.0 BANDWIDTH = 1.0 Hz<br>7.0 RS ≈ 0 5.0 R S ≈∞<br>IC = 10 �A 3.0 I C  = 1.0 mA<br>5.0<br>2.0<br>30 �A 300 �A<br>3.0 1.0<br>100 �A 0.7 100 �A<br>2.0 1.0 mA 300 �A 0.5<br>0.3 30 �A<br>0.2<br>10 �A<br>1.0 0.1<br>10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k<br>f, FREQUENCY (Hz) f, FREQUENCY (Hz)<br>Figure 1. Noise Voltage Figure 2. Noise Current<br>NOISE FIGURE CONTOURS<br>(VCE = − 5.0 Vdc, TA = 25 ° C)<br>1.0�M 1.0�M<br>500�k BANDWIDTH = 1.0 Hz 500�k BANDWIDTH = 1.0 Hz<br>200�k 200�k<br>100�k 100�k<br>50�k 50�k<br>20�k 20�k<br>0.5 dB<br>10�k 10�k<br>0.5 dB<br>5.0�k 5.0�k<br>1.0 dB<br>2.0�k 2.0�k 1.0 dB<br>1.0�k 2.0 dB 1.0�k<br>2.0 dB<br>500 500<br>3.0 dB 3.0 dB<br>200 5.0 dB 200 5.0 dB<br>100 100<br>10 20 30 50 70 100 200 300 500 700 1.0�k 10 20 30 50 70 100 200 300 500 700 1.0�k<br>IC, COLLECTOR CURRENT (�A) IC, COLLECTOR CURRENT (�A)<br>Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz<br>1.0�M<br>500�k 10 Hz to 15.7 kHz<br>200�k<br>100�k<br>Noise Figure is Defined as:<br>50�k<br>en [2] � 4KTRS  � In  [2] RS [2] 1 � 2<br>20�k NF  � 20 log10<br>10�k � 4KTRS �<br>0.5 dB<br>5.0�k en = Noise Voltage of the Transistor referred to the input. (Figure 3)<br>I = Noise Current of the Transistor referred to the input.<br>2.0�k 1.0 dB<br>n (Figure 4)<br>1.0�k 2.0 dB K = Boltzman’s Constant (1.38 x 10 [−23]  j/ ° K)<br>500 T = Temperature of the Source Resistance ( ° K)<br>3.0 dB<br>200 R = Source Resistance (Ohms)<br>5.0 dB<br>100 S<br>10 20 30 50 70 100 200 300 500 700 1.0�k<br>IC, COLLECTOR CURRENT (�A)<br>en, NOISE VOLTAGE (nV) In, NOISE CURRENT (pA)<br>RS, SOURCE RESISTANCE (OHMS) RS, SOURCE RESISTANCE (OHMS)<br>RS, SOURCE RESISTANCE (OHMS)<br>**----- End of picture text -----**<br>


**Figure 5. Wideband** 

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**BCW70LT1G** 

## **TYPICAL STATIC CHARACTERISTICS** 

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1.0<br>TA = 25°C<br>0.8<br>IC = 1.0 mA 10 mA 50 mA 100 mA<br>0.6<br>0.4<br>0.2<br>0<br>0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20<br>IB, BASE CURRENT (mA)<br>Figure 6. Collector Saturation Region<br>1.4<br>T J  = 25°C°CC<br>1.2<br>1.0<br>0.8<br>VBE(sat) @ IC/IB = 10BE(sat) @ IC/IB = 10 @ IC/IB = 10C/IB = 10/IB = 10B = 10 = 10<br>0.6<br>VBE(on) @ VCE = 1.0 VBE(on) @ VCE = 1.0 V @ VCE = 1.0 VCE = 1.0 V = 1.0 V<br>0.4<br>0.2<br>V CE(sat)  @ I C /I B  = 10<br>0<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


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100<br>TA = 25°C IB = 400 �A<br>PULSE WIDTH = 300 �s 350 �A<br>80 DUTY CYCLE ≤ 2.0%<br>300 �A 250 �A<br>60 200 �A<br>150 �A<br>40<br>100 �A<br>20 50 �A<br>0<br>0 5.0 10 15 20 25 30 35 40<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 7. Collector Characteristics** 

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1.4 1.6<br>T J  = 25°C°CC *APPLIES for IC/IB ≤ hFE/2<br>1.2<br>0.8<br>1.0 *�VC for VCE(sat) 25°C to 125°C<br>0<br>0.8 -55°C to 25°C<br>VBE(sat) @ IC/IB = 10BE(sat) @ IC/IB = 10 @ IC/IB = 10C/IB = 10/IB = 10B = 10 = 10<br>0.6<br>0.8<br>VBE(on) @ VCE = 1.0 VBE(on) @ VCE = 1.0 V @ VCE = 1.0 VCE = 1.0 V = 1.0 V 25°C to 125°C<br>0.4<br>1.6<br>0.2 �VB for VBE -55°C to 25°C<br>V CE(sat)  @ I C /I B  = 10<br>0 2.4<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 8. “On” Voltages Figure 9. Temperature Coefficients<br>500 1000<br>VCC = 3.0 V 700 VCC = - 3.0 V<br>300 IC/IB = 10 500 IC/IB = 10<br>200 TJ = 25°C 300 ts ITB1J = 25 = IB2°C<br>100 200<br>70<br>50 100<br>30 70<br>20 tr 50 tf<br>td @ VBE(off) = 0.5 V 30<br>10 20<br>7.0<br>5.0 10<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 -1.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 - 50 - 70 -100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>C)°<br>V, VOLTAGE (VOLTS)<br>V, TEMPERATURE COEFFICIENTS (mV/<br>θ<br>t, TIME (ns) t, TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 10. Turn−On Time** 

**Figure 11. Turn−Off Time** 

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**4** 

**BCW70LT1G** 

## **TYPICAL DYNAMIC CHARACTERISTICS** 

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500 10<br>TJ = 25°C TJ = 25 ° C<br>7.0<br>300 VCE = 20 V C ib<br>5.0<br>5.0 V<br>200<br>3.0<br>100 2.0 C ob<br>70<br>50 1.0<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50<br>IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 12. Current−Gain — Bandwidth Product Figure 13. Capacitance<br>1.0<br>0.7<br>D = 0.5<br>0.5<br>0.3<br>0.2<br>0.2<br>0.1<br>0.1<br>FIGURE 16<br>0.07 0.05 DUTY CYCLE, D = t1/t2<br>0.05 P(pk) D CURVES APPLY FOR POWER<br>0.02 PULSE TRAIN SHOWN<br>0.03 t 1 READ TIME AT t1 (SEE AN-569)<br>0.02 0.01 SINGLE PULSE t2 TZ�J(pk)JA(t) - T = rA( = Pt) w R(pk)�JA Z�JA(t)<br>0.01<br>0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k 20�k 50�k 100<br>t, TIME (ms)<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)T<br>(NORMALIZED)<br>r(t) TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 14. Thermal Response** 

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10 [4]<br>V CC  = 30 V<br>10 [3]<br>I CEO<br>10 [2]<br>10 [1] ICBO<br>AND<br>10 [0] ICEX @ VBE(off) = 3.0 V<br>10 [-1]<br>10 [-2]<br>-4 -2 0 +20 +40 +60 +80 +100 +120 +140 +160<br>0 0 TJ, JUNCTION TEMPERATURE (°C)<br>IC, COLLECTOR CURRENT (nA)<br>**----- End of picture text -----**<br>


## **DESIGN NOTE: USE OF THERMAL RESPONSE DATA** 

- A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. 

- To find Z � JA(t), multiply the value obtained from Figure 14 by the 

- steady state value R � JA. 

Example: 

Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) 

- Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. 

The peak rise in junction temperature is therefore 

   - T = r(t) x P(pk) x R � JA = 0.22 x 2.0 x 200 = 88 ° C. 

- For more information, see AN−569. 

**Figure 15. Typical Collector Leakage Current** 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>2 DATE 30 JAN 2018<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>“a 3 t = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>= T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM<br>1<br>2.90 i 0.903X XXX = Specific Device Code oo<br>M = Date Code<br>= Pb−Free Package<br>LO | cr ,<br>*This information is generic. Please refer to<br>3X 0.80 a) LL 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “ ”, |<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1<br>aes<br>ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>


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