BCW69,215

Bipolar (BJT) Single Transistor, PNP, -45 V, -100 mA, 250 mW, SOT-23, Surface Mount

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Manufacturer: NEXPERIA
Product type:
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:260hFE; R
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 250mW
Transistor Mounting: Surface Mount
Transistor Polarity: PNP
Transition Frequency: 100MHz
Transistor Case Style: SOT-23
DC Current Gain hFE Min: 260hFE
Operating Temperature Max: 150°C
Continuous Collector Current: -100mA
Collector Emitter Voltage Max: -45V

Delivery and price
Units per pack	5000
Price	0.074 €
Current stock	10+
Lead time	30 days

Datasheet

Philips Semiconductors eee 

Product specification 

## PNP general purpose transistors 

## BCW69; BCW70 

## eee 

## FEATURES 

e Low current (max. 100 mA) 

## APPLICATIONS 

¢ General purpose switching and amplification. 

## DESCRIPTION 

PNP transistor in a SOT23 plastic package. NPN complements: BCW71 and BCW72. 

## MARKING 

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PINNING 

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## Note 

1. * =p: Made in Hong Kong. * = t: Made in Malaysia. 

Fig.1 Simplified outline (SOT23) and symbol. 

## LIMITING VALUES 

In accordance with the Absolute Maximum Rating System (IEC 134). 

|SYMBOL|PARAMETER|CONDITIONS||MIN.<br>| MAX. | UNIT|
|---|---|---|---|
||collector-emitter voltage<br>emitter-basevoltage|open base; Ic=-2mA<br>opencollector|fs |-45 fv<br>-<br>[5<br>|v<br>||



1999 Apr 19 

2 

Philips Semiconductors 

Product specification 

BCW69; BCW70 

## PNP general purpose transistors 

## THERMAL CHARACTERISTICS 

Note 

1. Transistor mounted on an FRé4 printed-circuit board. 

## CHARACTERISTICS 

|Tj = 25 °C unless otherwise specified.<br>[svmeo.[PARAMETER [CONDITIONS<br>| MIN.| TYP |MAK. UNTT<br>ro<br>peewrenetowet Eanes<br>eae<br>feso _[emitercutoffeurent<br>—_([lo=0Vep=SV<br>«dt ~~‘ 100 [na_|<br>hee<br>DC current gain<br>Io =-10 WA; Vee =-5 V|
|---|
|BCW69<br>90|
|BCW70<br>150|
|DC current gain<br>Ic<br>=-2 MA; Voce =-5 V|
|BCW69<br>120<br>260|
|BCW70<br>215<br>500|
|VceEsat<br>collector-emitter saturation<br>Hlo=-10mA;Ig=-05mA — [—- __—{-80.-|-300 |mv_ |<br>aa aa<br>(reece<br>eo<br>VeEsat<br>base-emitter saturation voltage<br>Hlo=-10mA;Ig=-05mA — [—- ——{-720 |- | mv_s—F<br>em<br>[Parensesstater ete eeSymn eecesmnamet pa [pa<br>[Vee<br>[base-emittervotage<br>——([lo=2mA;Voe=-8V_—*f-600<br>|-__—|-750_[mv_|<br>fc.<br>[ollestor capacitance<br>_—‘|le=le=0;Vop=-10Vii=iMHz|-<br>[45|- [oF_|<br>ho femrtevee<br>[eenme<br>f = 100 MHz<br>PREY<br>||PP<br>Rg<br>= 2 kQ; f =<br>1 kHz;<br>B = 200 Hz|



Note 

1. Pulse test: t, < 300 us; 6 < 0.02. 

1999 Apr 19 

3 

Philips Semiconductors 

Product specification 

## PNP general purpose transistors 

## BCW69; BCW70 

## PACKAGE OUTLINE 

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Plastic surface mounted package; 3 leads SOT23<br>D cB E<br>pL | \ |<br>\ !<br>SVP,<br>a rN SY<br>He f=lv MA]<br>3<br>ee ey fF<br>ee<br>AY<br>1] | i |2 __ _<br>a J!<br>EJ bel | WOE] Le<br>|. [2] + |<br>0 1 2mm<br>Lositriiiritiiiiiiiiit<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>vor | a faeA  | |e |e fe fe fom] |e |v | w |<br>crm fos14 [0 [ 0 48S |[sos 0.15 | 3 05 | 1 .43 [12 Jos | 2.5at |[880.4 5 | 0 .55% | oe | oe |<br>RSourune |eeCREFERENCES =||EUROPEAN eo<br>om eo| ree<br>1999 Apr 19 4<br>**----- End of picture text -----**<br>

Updated at June 1, 2026

Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.

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