BCW33LT1G

## BCW33LT1G, SBCW33LT1G 

## General Purpose Transistor **NPN Silicon** 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

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- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**SOT−23 (TO−236) MAXIMUM RATINGS CASE 318−08 STYLE 6 Rating Symbol Value Unit** Collector − Emitter Voltage VCEO 32 Vdc COLLECTOR Collector − Base Voltage VCBO 32 Vdc 3 Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 100 mAdc 1 BASE **THERMAL CHARACTERISTICS** ~~soe~~ **Characteristic Symbol Max Unit** 2 Total Device Dissipation FR−5 Board PD EMITTER (Note 1) TA = 25 ° C 225 mW Derate above 25 ° C 1.8 mW/ ° C **MARKING DIAGRAM** ~~Tf~~ Thermal Resistance, R JA 556 ° C/W Junction−to−Ambient D3 M Total Device Dissipation PD Alumina Substrate (Note 2), TA = 25 ° C 300 mW Derate above 25 ° C 2.4 mW/ ° C Thermal Resistance, R JA 417 ° C/W D3M = Specific Device Code= Date Code* ~~ee~~ Junction−to−Ambient ~~ee -~~ = Pb−Free Package Junction and Storage Temperature TJ, Tstg −55 to +150 ° C (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation and/or overbar may device. If any of these limits are exceeded, device functionality should not be vary depending upon manufacturing location. assumed, damage may occur and reliability may be affected. 

*Date Code orientation and/or overbar may vary depending upon manufacturing location. 

1. FR−5 = 1.0 0.75 0.062 in. 

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|BCW33LT1G|SOT−23<br>(Pb−Free)|3,000/Tape & Reel|
|SBCW33LT1G|SOT−23<br>(Pb−Free)|3,000/Tape & Reel|
|BCW33LT3G|SOT−23<br>(Pb−Free)|10,000/Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 1994 **November, 2016 − Rev. 6** 

**BCW33LT1/D** 

**BCW33LT1G, SBCW33LT1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage<br>(IC= 2.0 mAdc, IB= 0)|V(BR)CEO|32|−|Vdc|
|Collector−Base Breakdown Voltage<br>(IC= 10�Adc, IB= 0)|V(BR)CBO|32|−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= 10�Adc, IC= 0)|V(BR)EBO|5.0|−|Vdc|
|Collector Cutoff Current<br>(VCB= 32 Vdc, IE= 0)<br>(VCB= 32 Vdc, IE= 0, TA= 100°C)|ICBO|−<br>−|100<br>10|nAdc<br>�Adc|
|**ON CHARACTERISTICS**|||||
|DC Current Gain<br>(IC= 2.0 mAdc, VCE= 5.0 Vdc)|hFE|420|800|−|
|Collector−Emitter Saturation Voltage<br>(IC= 10 mAdc, IB= 0.5 mAdc)|VCE(sat)|−|0.25|Vdc|
|Base−Emitter On Voltage<br>(IC= 2.0 mAdc, VCE= 5.0 Vdc)|VBE(on)|0.55|0.70|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Output Capacitance<br>(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)|Cobo|−|4.0|pF|
|Noise Figure<br>(VCE= 5.0 Vdc, IC= 0.2 mAdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|10|dB|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **EQUIVALENT SWITCHING TIME TEST CIRCUITS** 

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**----- Start of picture text -----**<br>
+�3.0 V +�3.0 V<br>300 ns +10.9 V 275 DUTY CYCLE = 2%10 < t1 < 500 �s t1 +10.9 V 275<br>DUTY CYCLE = 2%<br>10 k 10 k<br>0<br>-�0.5 V<br><1.0 ns CS < 4.0 pF* CS < 4.0 pF*<br>-�9.1 V 1N916<br><1.0 ns<br>**----- End of picture text -----**<br>


*Total shunt capacitance of test jig and connectors 

**Figure 1. Turn−On Time** 

**Figure 2. Turn−Off Time** 

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**BCW33LT1G, SBCW33LT1G** 

## **TYPICAL NOISE CHARACTERISTICS** 

**==> picture [109 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
(VCE = 5.0 Vdc, TA = 25 ° C)<br>**----- End of picture text -----**<br>


**==> picture [489 x 630] intentionally omitted <==**

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20 100<br>IC = 1.0 mA BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz<br>50<br>RS = 0 I C  = 1.0 mA RS ≈∞<br>300 �A 20 300 �A<br>10<br>10 100 �A<br>5.0<br>7.0 100 �A<br>2.0<br>5.0<br>1.0<br>3.0 10 �A 30 �A 0.5 30 �A<br>0.2 10 �A<br>2.0 0.1<br>10 20 50 100 200 500 1�k 2�k 5�k 10�k 10 20 50 100 200 500 1�k 2�k 5�k 10�k<br>f, FREQUENCY (Hz) f, FREQUENCY (Hz)<br>Figure 3. Noise Voltage Figure 4. Noise Current<br>NOISE FIGURE CONTOURS<br>(VCE = 5.0 Vdc, TA = 25 ° C)<br>500�k 1�M<br>200�k BANDWIDTH = 1.0 Hz 500�k BANDWIDTH = 1.0 Hz<br>100�k 200�k<br>50�k 100�k<br>20�k 50�k<br>10�k 20�k<br>5�k 10�k<br>2.0 dB 1.0 dB<br>1�k2�k 3.0 dB 4.0 dB 6.0 dB 5�k2�k 2.0 dB 3.0 dB<br>10 dB<br>500 1�k<br>200 500 5.0 dB<br>100 200 8.0 dB<br>50 100<br>10 20 30 50 70 100 200 300 500 700 1�k 10 20 30 50 70 100 200 300 500 700 1�k<br>IC, COLLECTOR CURRENT (�A) IC, COLLECTOR CURRENT (�A)<br>Figure 5. Narrow Band, 100 Hz Figure 6. Narrow Band, 1.0 kHz<br>500�k<br>10 Hz to 15.7 kHz<br>200�k<br>100�k<br>50�k Noise Figure is defined as:<br>20�k en [[2]] � 4KTRS  � In  [[2]] RS [[2]] 1 � 2<br>10�k NF  � 20 log10<br>5�k 1.0 dB � 4KTRS �<br>enn = Noise Voltage of the Transistor referred to the input. (Figure 3)<br>2�k 2.0 dB Inn = Noise Current of the Transistor referred to the input. (Figure 4)<br>1�k 3.0 dB K = Boltzman’s Constant (1.38 x 10 [[−23]]  j/ ° K)<br>500 T = Temperature of the Source Resistance ( ° K)<br>200 5.0 dB RSS = Source Resistance (Ohms)<br>8.0 dB<br>100<br>50<br>10 20 30 50 70 100 200 300 500 700 1�k<br>IC, COLLECTOR CURRENT (�A)<br>en, NOISE VOLTAGE (nV) In, NOISE CURRENT (pA)<br>RS, SOURCE RESISTANCE (OHMS) RS, SOURCE RESISTANCE (OHMS)<br>RS, SOURCE RESISTANCE (OHMS)<br>**----- End of picture text -----**<br>


en[[2]] � 4KTRS � In[[2]] RS[[2]] 1 � 2 NF � 20 log10 � 4KTRS � enn = Noise Voltage of the Transistor referred to the input. (Figure 3) 

- Inn = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10[[−23]] j/ ° K) T = Temperature of the Source Resistance ( ° K) RSS = Source Resistance (Ohms) 

**Figure 7. Wideband** 

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**3** 

**BCW33LT1G, SBCW33LT1G** 

## **TYPICAL STATIC CHARACTERISTICS** 

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1.0 100<br>BCW33LT1TJ = 25°C PULSE WIDTH = 300 TA = 25°C �s IB = 500 �A<br>0.8 80 DUTY CYCLE ≤ 2.0% 400 �A<br>IC = 1.0 mA 10 mA 50 mA 100 mA 300 �A<br>0.6 60<br>200 �A<br>0.4 40<br>100 �A<br>0.2 20<br>0 0<br>0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40<br>IB, BASE CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>Figure 8. Collector Saturation Region Figure 9. Collector Characteristics<br>1.4 1.6<br>T J  = 25°C *APPLIES for IC/IB ≤ hFE/2<br>1.2<br>0.8<br>25°C to 125°C<br>1.0<br>*�VC for VCE(sat)<br>0<br>0.8 VBE(sat) @ IC/IB = 10 -55°C to 25°C<br>0.6<br>-�0.8<br>V BE(on)  @ V CE  = 1.0 V<br>0.4 25°C to 125°C<br>-�1.6<br>0.2 �VB for VBE -55°C to 25°C<br>VCE(sat) @ IC/IB = 10<br>0 -�2.4<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 10. “On” Voltages Figure 11. Temperature Coefficients<br>300 1000<br>200 VCC = 3.0 V 700<br>TICJ/I = 25B = 10°C 500 ts<br>100 300<br>70<br>200<br>50<br>30 tr 100 tf<br>20 70<br>50<br>td @ VBE(off) = 0.5 Vdc<br>10 30 VCC = 3.0 V<br>7.0 IC/IB = 10<br>20<br>5.0 IB1 = IB2<br>TJ = 25°C<br>3.0 10<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>IC, COLLECTOR CURRENT (mA)<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>C)°<br>V, VOLTAGE (VOLTS)<br>V, TEMPERATURE COEFFICIENTS (mV/<br>θ<br>t, TIME (ns) t, TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 12. Turn−On Time** 

**Figure 13. Turn−Off Time** 

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**BCW33LT1G, SBCW33LT1G** 

## **TYPICAL DYNAMIC CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
500 10<br>TJ = 25°C T J  = 25°C<br>f = 100 MHz 7.0 f = 1.0 MHz<br>300<br>VCE = 20 V 5.0 Cib<br>200 5.0 V<br>Cob<br>3.0<br>100 2.0<br>70<br>50 1.0<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50<br>IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 14. Current−Gain — Bandwidth Product Figure 15. Capacitance<br>1.0<br>0.7<br>D = 0.5<br>0.5<br>0.3<br>0.2<br>0.2<br>0.1<br>0.1<br>FIGURE 19A<br>0.07 0.05<br>DUTY CYCLE, D = t1/t2<br>0.05 P(pk) D CURVES APPLY FOR POWER<br>0.02 PULSE TRAIN SHOWN<br>0.030.02 0.01 SINGLE PULSE t 1 t2 Z READ TIME AT t T � J(pk)JA(t)  − T = r(t)  A  = P � R (pk) � JA1 (SEE AN−569)  Z � JA(t)<br>0.01<br>0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k 20�k 50�k 100�k<br>t, TIME (ms)<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)T<br>(NORMALIZED)<br>r(t) TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 16. Thermal Response** 

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10 [4]<br>V CC  = 30 Vdc<br>10 [3]<br>10 [2] ICEO<br>10 [1]<br>10 [0] I CBO<br>AND<br>ICEX @ VBE(off) = 3.0 Vdc<br>10 [-1]<br>10 [-2]<br>-4 -2 0 +20 +40 +60 +80 +100 +120 +140 +160<br>0 0 TJ, JUNCTION TEMPERATURE (°C)<br>IC, COLLECTOR CURRENT (nA)<br>**----- End of picture text -----**<br>


## **DESIGN NOTE: USE OF THERMAL RESPONSE DATA** 

A train of periodical power pulses can be represented by the model as shown in Figure 16A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 16 was calculated for various duty cycles. 

To find Z � JA(t), multiply the value obtained from Figure 16 by the steady state value R � JA. 

Example: 

The MPS3904 is dissipating 2.0 watts peak under the following conditions: 

t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) 

Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. 

The peak rise in junction temperature is therefore 

- T = r(t) x P(pk) x R � JA = 0.22 x 2.0 x 200 = 88 ° C. 

For more information, see AN−569. 

**==> picture [50 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16A.<br>**----- End of picture text -----**<br>


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**BCW33LT1G, SBCW33LT1G** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

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D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>a 3 = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>A1 SIDE VIEW SEE VIEW C c STYLE 6:<br>PIN 1. BASE<br>END VIEW 2. EMITTER<br>3. COLLECTOR<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 _ 0.90<br>Lo | cr<br>3X 0.80 | LL L 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**BCW33LT1/D** 

**6**