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BCV62CE6327HTSA1
Bipolar Transistor Array, Dual PNP, 30 V, 100 mA
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- Manufacturer: INFINEON
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:520hFE; Transistor Case Style:SOT-143; No. of P
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: -
- Qualification: AEC-Q101
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual PNP
- Power Dissipation NPN: -
- Power Dissipation PNP: 300mW
- Transistor Case Style: SOT-143
- Transition Frequency NPN: -
- Transition Frequency PNP: 250MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: -
- DC Current Gain hFE Min PNP: 100hFE
- Continuous Collector Current NPN: -
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: -
- Collector Emitter Voltage Max PNP: 30V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.599 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BCV62** ## **PNP Silicon Double Transistor** - To be used as a current mirror - Good thermal coupling and _V_ BE matching - High current gain - Low collector-emitter saturation voltage - Pb-free (RoHS compliant) package - Qualified according AEC Q101 **==> picture [116 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>2<br>4<br>1<br>C1 (2) C2 (1)<br>Tr.1 Tr.2<br>E1 (3) E2 (4)<br>EHA00013<br>**----- End of picture text -----**<br> |**Type**|**Marking**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Package**| |---|---|---|---|---|---|---| |BCV62A<br>BCV62B<br>BCV62C|3Js<br>3Ks<br>3Ls|1 = C2<br>1 = C2<br>1 = C2|2 = C1<br>2 = C1<br>2 = C1|3 = E1<br>3 = E1<br>3 = E1|4 = E2<br>4 = E2<br>4 = E2|SOT143<br>SOT143<br>SOT143| ## **Maximum Ratings** |**Maximum Ratingsgss**|||| |---|---|---|---| |**Parameter**|**Symbol**<br>~~e~~|**Value**<br>~~e~~e|**Unit**<br>e| |Collector-emitter voltage<br>(transistor T1)|_V_CEO<br>~~f~~|30<br>~~f~~o|V<br>o<br>o<br>e| |Collector-base voltage (open emitter)<br>(transistor T1)|_V_CBO<br>~~f~~|30<br>~~f~~o|| |Emitter-base voltage|_V_EBS<br>~~e~~|6<br>~~e~~e|| |DC collector current|_I_C<br>~~e~~|100<br>~~e~~s|mA<br>s<br>s<br>e| |Peak collector current|_I_CM<br>~~e~~|200<br>~~e~~s|| |Basepeak current(transistor T1)|_I_BM<br>~~e~~|200<br>~~e~~e|| |Totalpower dissipation, _T_S= 99 °C|_P_tot<br>~~e~~|300<br>~~e~~s|mW<br>s| |Junction temperature|_T_j<br>~~e~~|150<br>~~e~~s|°C<br>s<br>~~es~~| |Storage temperature|j<br>_T_stg<br>~~es~~|-65 ... 150<br>~~es~~|| **Thermal Resistance** ~~foo~~ Junction - soldering point[1)] _R_ thJS ≤170 K/W Nv- ~~Td~~ > 1For calculation of _R_ thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2011-07-25 1 **BCV62** ## **Electrical Characteristics** at _T_ A = 25°C, unless otherwise specified |**Electrical Characteristics**at_T_A= 25°C,unless o|therwise s|pecified|pecified|pecified|| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**| |||**min.**|**typ.**|**max.**|| |**DC Characteristics of T1**|||||| |Collector-emitter breakdown voltage<br>_I_C= 10 mA,_I_B= 0|_V_(BR)CEO|30|-|-|V| |Collector-base breakdown voltage<br>_I_C= 10µA,_I_E= 0|_V_(BR)CBO|30|-|-|| |Emitter-base breakdown voltage<br>_I_E= 10 µA,_I_C= 0|_V_(BR)EBO|6|-|-|| |Collector cutoff current<br>_V_CB= 30 V,_I_E= 0|_I_CBO|-|-|15|nA| |Collector cutoff current<br>_V_CB= 30 V,_I_E= 0 ,_T_A= 150 °C|_I_CBO|-|-|5|µA| |DC current gain 1)<br>_I_C= 0.1 mA,_V_CE= 5 V|_h_FE|100|-|-|-| |DC current gain 1)<br>_I_C= 2 mA,_V_CE= 5 V<br>BCV62A<br>BCV62B<br>BCV62C|_h_FE|125<br>220<br>420|180<br>290<br>520|220<br>475<br>800|| |Collector-emitter saturation voltage1)<br>_I_C= 10 mA,_I_B= 0.5 mA<br>_I_C= 100 mA,_I_B= 5 mA|_V_CEsat|-<br>-|75<br>250|300<br>650|mV| |Base-emitter saturation voltage 1)<br>_I_C= 10 mA,_I_B= 0.5 mA<br>_I_C= 100 mA,_I_B= 5 mA|_V_BEsat|-<br>-|700<br>850|-<br>-|| |Base-emitter voltage 1)<br>_I_C= 2 mA,_V_CE= 5 V<br>_I_C= 10 mA,_V_CE= 5 V|_V_BE(ON)|600<br>-|650<br>-|750<br>820|| 1) Pulse test: t ≤ 300µs, D = 2% 2011-07-25 2 **BCV62** ## **Electrical Characteristics** at _T_ A = 25°C, unless otherwise specified. |**Electrical Characteristics**at_T_A= 25°C,unless o|therwise s|pecified.|pecified.|pecified.|| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**| |||**min.**|**typ.**|**max.**|| |**DC Characteristics**|||||| |Base-emitter forward voltage<br>_I_E= 10 µA<br>_I_E= 250 mA|_V_BES|0.4<br>-|-<br>-|-<br>1.8|V| |Matching of transistor T1 and transistor T2<br>at_I_E2= 0.5mA and_V_CE1= 5V<br>_T_A= 25 °C<br>_T_A= 150 °C|_I_C1/_I_C2|-<br>0.7<br>0.7|-<br>-<br>-|-<br>1.3<br>1.3|-| |Thermal coupling of transistor T1 and<br>transistor T21)T1:_V_CE= 5V<br>Maximum current of thermal stability of_I_C1|_I_E2|-|5|-|mA| |**AC characteristics of transistor T1**|||||| |Transition frequency<br>_I_C= 10 mA,_V_CE= 5 V,_f_= 100 MHz|_f_T|-|250|-|MHz| |Collector-base capacitance<br>_V_CB= 10 V,_f_= 1 MHz|_C_cb|-|1.5|-|pF| |Emitter-base capacitance<br>_V_EB= 0.5 V,_f_= 1 MHz|_C_eb|-|8|-|| |Noise figure<br>_I_C= 200 µA,_V_CE= 5 V,_R_S= 2 kΩ,<br>_f_= 1 kHz,∆f = 200 Hz|_F_|-|2|-|dB| |Short-circuit input impedance<br>_I_C= 1 mA,_V_CE= 10 V,_f_= 1 kHz|_h_11e|-|4.5|-|kΩ| |Open-circuit reverse voltage transf.ratio<br>_I_C= 1 mA,_V_CE= 10 V,_f_= 1 kHz|_h_12e|-|2|-|10-4| |Short-circuit forward current transf.ratio<br>_I_C= 1 mA,_V_CE= 10 V,_f_= 1 kHz|_h_21e|100|-|900|-| |Open-circuit output admittance<br>_I_C= 1 mA,_V_CE= 10 V,_f_= 1 kHz|_h_22e|-|30|-|µS| 1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm 2011-07-25 3 **BCV62** ## **Test circuit for current matching** **==> picture [281 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>Ι C1<br>2 1<br>V CE1 ... T1 T2 Ι E2 = constant<br>3 4<br>V CO V CO EHN00003<br>**----- End of picture text -----**<br> Note: Voltage drop at contacts: _V_ CO < 2/3 _V_ T = 16mV **Characteristic for determination of** _**V**_ **CE1 at specified** _**R**_ **E range with** _**I**_ **E2 as parameter under condition of** _**I**_ **C1/** _**I**_ **E2 = 1.3** **==> picture [281 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>Ι C1<br>2 1<br>V CE1 ... T1 T2 Ι E2 = constant<br>3 4<br>R E R E<br>EHN00004<br>**----- End of picture text -----**<br> Note: BCV62 with emitter resistors 2011-07-25 4 **BCV62** **Collector-base capacitance** _C_ cb = ƒ( _V_ CB) **Emitter-base capacitance** _C_ eb = ƒ( _V_ EB) **==> picture [237 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>pF<br>10<br>9<br>8<br>7<br>6<br>5<br>CEB<br>4<br>3<br>2<br>1<br>CCB<br>0<br>0 4 8 12 16 V 22<br>V CB( V EB)<br>)<br>EB<br>C<br>(<br>CB<br>C<br>**----- End of picture text -----**<br> **Total power dissipation** _P_ tot = _f_ ( _T_ S) **==> picture [230 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>mW<br>250<br>200<br>150<br>100<br>50<br>0<br>0 15 30 45 60 75 90 105 120 °C 150<br>T S<br>tot<br>P<br>**----- End of picture text -----**<br> ## **Permissible pulse load** _P_ totmax / _P_ totDC = _f_ ( _t_ p) **==> picture [234 x 269] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3 BCV 62 EHP00941<br>P totmax t<br>5 t p<br>P tot DC D = p<br>T<br>T<br>10 [2] D =<br>0<br>0.005<br>5<br>0.01<br>0.02<br>0.05<br>0.1<br>0.2<br>0.5<br>10 [1]<br>5<br>10 0<br>10 -6 10 [-5] 10 [-4] 10 [-3] 10 [-2] s 10 [0]<br>t<br>p<br>**----- End of picture text -----**<br> 2011-07-25 5 **Package SOT143** **BCV62** **==> picture [494 x 693] intentionally omitted <==** **----- Start of picture text -----**<br> Package Outline<br>2.9 ±0.1 1±0.1<br>B<br>1.9 0.1 MAX.<br>4 3<br>1 2<br>0.2 A<br>+0.1<br>0.8 -0.05<br>+0.1<br>0.4 -0.05<br>0.25 M B 0.2 M A<br>1.7<br>Foot Print<br>0.8 1.2 0.8<br>1.2 0.8<br>0.8<br>Marking Layout (Example)<br>Manufacturer<br>2005, June<br>RF s<br>Date code (YM)<br>Pin 1 BFP181<br>Type code<br>Standard Packing<br>Reel ø180 mm = 3.000 Pieces/Reel<br>Reel ø330 mm = 10.000 Pieces/Reel<br>4 0.2<br>Pin 1 3.15 1.15<br>0...8˚<br>0.08...0.15<br>0.15 MIN.<br> ±0.15 ±0.1<br>2.4 1.3<br>10˚ MAX. 10˚ MAX.<br>0.9<br>1.1<br>0.9<br>5 6<br>8<br>2.6<br>**----- End of picture text -----**<br> 2011-07-25 6 **BCV62** ## **Edition 2009-11-16** ## **Published by Infineon Technologies AG 81726 Munich, Germany** ## **2009 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2011-07-25 7
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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