BCV62CE6327HTSA1

Bipolar Transistor Array, Dual PNP, 30 V, 100 mA

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Manufacturer: INFINEON
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:520hFE; Transistor Case Style:SOT-143; No. of P
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 4Pins
Product Range: -
Qualification: AEC-Q101
Transistor Mounting: Surface Mount
Transistor Polarity: Dual PNP
Power Dissipation NPN: -
Power Dissipation PNP: 300mW
Transistor Case Style: SOT-143
Transition Frequency NPN: -
Transition Frequency PNP: 250MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: -
DC Current Gain hFE Min PNP: 100hFE
Continuous Collector Current NPN: -
Continuous Collector Current PNP: 100mA
Collector Emitter Voltage Max NPN: -
Collector Emitter Voltage Max PNP: 30V

Delivery and price
Units per pack	5000
Price	0.11 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 18, 2026