BCV62B,215
Bipolar Transistor Array, Dual PNP, 30 V, 100 mA
- Manufacturer: NEXPERIA
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-143B;
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual PNP
- Power Dissipation NPN: -
- Power Dissipation PNP: 250mW
- Transistor Case Style: SOT-143B
- Transition Frequency NPN: -
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: -
- DC Current Gain hFE Min PNP: 220hFE
- Continuous Collector Current NPN: -
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: -
- Collector Emitter Voltage Max PNP: 30V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.241 € |
| Current stock | 10+ |
| Lead time | 30 days |
**==> picture [458 x 297] intentionally omitted <==** **----- Start of picture text -----**<br> Final Product Change Notification 201811008F01<br>Issue Date: 10-Apr-2019<br>Effective Date: 23-Jul-2019<br>Dear Patricio Gomez Bello ,<br>Here's your personalized quality information<br>concerning products Premier Farnell PLC purchased<br>from Nexperia.<br>For detailed information we invite you to view this<br>notification online<br>\<br>Quality<br>Change Category<br>[X] Wafer Fab Process [ ] Assembly [ ] Product Marking [ ] Test [ ] Design<br>Process Location<br>[X] Wafer Fab Materials [X] [ ] Mechanical [ ]Test [ ] Errata<br>Assembly Specification Process<br>Materials<br>[ ] Wafer Fab Location [ ] Assembly [ ] [ ] Test [ ] Electrical<br>Location Packing/Shipping/Labeling Equipment spec./Test<br>coverage<br>**----- End of picture text -----**<br> Release of 8 inch wafer diameter for generalpurpose bipolar transistors ## **Details of this Change** Release of 8 inch wafer diameter for general-purpose bipolar transistors. Old products: Production using 6 inch wafer diameter Changed products: Production using 6 and 8 inch wafer diameter In addition the thickness of the top side metallization for parts of the affected bipolar transistors will be adapted from 1.4 to 1.5µm for standardization reasons. Selected types have a change in die pitch size along with release of 8 inch wafer diameter. Some product types in SOT323 package have a release of lead frame design version SOT323 R1. Please refer to the Self Qualification Report for details and list of affected product types. Production on 8 inch wafer diameter implies the use of the respective 8 inch wafer process technology. **Why do we Implement this Change** To increase flexibility and volume ramp-up. ## **Identification of Affected Products** The 8 inch products can be identified by a marker on the die surface. Changed products can be identified by date code after implementation. ## **Product Availability** **Sample Information** Samples are available upon request Latest sample request date for PCN samples is 10-May-2019. **Production** Planned first shipment 01-Aug-2019 **Impact** No impact to the products' functionality anticipated. **Data Sheet Revision** No impact to existing datasheet **Disposition of Old Products** Existing inventory will be shipped until depleted. Supply using 6 inch wafer will be continued in parallel to 8 inch wafer production. **Related Notifications** **Notification Issue Date Effective DateTitle** 201110021F01 15-Nov13-Feb-2012 Release of 8 inch wafer diameter and change of die pitch size for 2011 PMBT2222A family 201208006F01 05-Sep03-Dec-2012 Release of 8 inch wafer diameter for general purpose NPN / 2012 PNP transistors 201602003F01 22-May03-Sep-2016 Release of 8 inch wafer diameter for low VCEsat (BISS) 2016 transistors 201712005F01 30-Apr-2018 29-Jul-2018 Change of lead frame version in SOT323 package ## **Additional information** Affected products and sales history information: see attached file Self qualification: view online Additional documents: view online ## **Timing and Logistics** Your acknowledgement of this change, conform JEDEC J-STD-046, is expected till 10-May-2019. Lack of acknowledgement of the PCN constitutes acceptance of the change. **Contact and Support** For all inquiries regarding the ePCN tool application or access issues, please contact Nexperia "Global " Quality Support Team . For all Quality Notification content inquiries, please contact your local Nexperia Sales Support team. For specific questions on this notice or the products affected please contact our specialist directly: **e-mail address** PCN-Bipolar.Discretes@nexperia.com At Nexperia B.V. we are constantly striving to improve our product and processes to ensure they reach the highest possible Quality Standards. <<<<<<< PCN2.html **About Nexperia B.V.** We at Nexperia are the efficiency semiconductor company. We deliver over 90 billion products a year and as such service thousands of global customers, both directly and through our extensive network of channel partners. We are at the heart of billions of electronic devices in the Automotive, Mobile, Industrial, Consumer, Computing, and Communication Infrastructure segments. You have received this email because you are a designated contact or subscribed to Nexperia Quality Notifications. Nexperia shall not be held liable if this Notification is not correctly distributed within your organization. This message has been automatically distributed. Please do not reply. View Notification Subscription Support Nexperia | Nexperia B.V. Jonkerbosplein 52 6534 AB Nijmegen, The Netherlands © 2017 Nexperia. All rights reserved.
Updated at June 10, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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