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BCV61,215
Bipolar Transistor Array, Dual NPN, 30 V, 100 mA, 250 mW
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- Manufacturer: NEXPERIA
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-143B; No.
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- Power Dissipation NPN: 250mW
- Power Dissipation PNP: -
- Transistor Case Style: SOT-143B
- Transition Frequency NPN: 100MHz
- Transition Frequency PNP: -
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 100hFE
- DC Current Gain hFE Min PNP: -
- Continuous Collector Current NPN: 100mA
- Continuous Collector Current PNP: -
- Collector Emitter Voltage Max NPN: 30V
- Collector Emitter Voltage Max PNP: -
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.148 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Important notice** Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - **© Nexperia B.V. (year). All rights reserved** . If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, Kind regards, Team Nexperia **==> picture [49 x 50] intentionally omitted <==** ## **BCV61** ## **NPN general-purpose double transistors** **Rev. 04 — 18 December 2009** **Product data sheet** ## **1. Product profile** ## **1.1 General description** NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. ## **Table 1. Product overview** |**Type number**|**Package**|**Package**|**PNP complement**| |---|---|---|---| ||**NXP**|**JEITA**|| |BCV61|SOT143B<br>-||BCV62| |BCV61A|||BCV62A| |BCV61B|||BCV62B| |BCV61C|||BCV62C| ## **1.2 Features** - Low current (max. 100 mA) - Low voltage (max. 30 V) - Matched pairs ## **1.3 Applications** - Applications with working point independent of temperature - Current mirrors ## **2. Pinning information** |**Table 2.**<br>**Pinning**|**Table 2.**<br>**Pinning**| |---|---| |**Pin**<br>**Description**<br>**Simplified outline**<br>**Graphic symbol**|| |1<br>collector TR2;<br>base TR1 and TR2<br>2<br>collector TR1<br>3<br>emitter TR1<br>4<br>emitter TR2<br><br>4|2<br>1<br>3<br>_006aaa842_<br>1<br>2<br>4<br>TR2<br>TR1<br>3| **==> picture [81 x 43] intentionally omitted <==** **BCV61** **NXP Semiconductors** **NPN general-purpose double transistors** ## **3. Ordering information** **Table 3. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |BCV61|-<br>plastic surface-mounted package; 4 leads<br>SOT143B||| |BCV61A|||| |BCV61B|||| |BCV61C|||| ## **4. Marking** |**Table 4.**|**Marking codes**|| |---|---|---| |**Type number**||**Marking cod**~~**e**~~**[1]**| |BCV61||1M*| |BCV61A||1J*| |BCV61B||1K*| |BCV61C||1L*| - [1] * = -: made in Hong Kong - = p: made in Hong Kong - = t: made in Malaysia - = W: made in China ## **5. Limiting values** **Table 5. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**|**Parameter**|**Conditions**||**Min**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**Per transistor**||||||| |VCBO|collector-base voltage|open emitter||-|30|V| |VCEO|collector-emitter voltage|open base||-|30|V| |VEBS|emitter-base voltage|VCE= 0 V||-|6|V| |IC|collector current|||-|100|mA| |ICM|peak collector current|||-|200|mA| |IBM|peak base current|||-|200|mA| |**Per device**||||||| |Ptot|total power dissipation|Tamb≤25°C|[1]|-|250|mW| |Tj|junction temperature|||-|150|°C| |Tamb|ambient temperature|||−65|+150|°C| |Tstg|storage temperature|||−65|+150|°C| [1] Device mounted on an FR4 Printed-Circuit Board (PCB). © NXP B.V. 2009. All rights reserved. BCV61_4 **Product data sheet** **Rev. 04 — 18 December 2009** **2 of 13** **BCV61** **NXP Semiconductors** **NPN general-purpose double transistors** ## **6. Thermal characteristics** **Table 6. Thermal characteristics** |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |Rth(j-a)|thermal resistance from junction|in free air|[1]|-|-|500|K/W| ||to ambient||||||| [1] Device mounted on an FR4 PCB. ## **7. Characteristics** **Table 7. Characteristics** _Tj = 25_ ° _C unless otherwise specified._ |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |**Transistor TR1**|| |ICBO<br>collector-base cut-off current|VCB= 30 V;<br>IE= 0 A<br>-<br>-<br>15<br>nA| ||VCB= 30 V;<br>IE= 0 A;<br>Tj= 150°C<br>-<br>-<br>5<br>μA| |IEBO<br>emitter-base cut-off current|VEB= 5 V;<br>IC= 0 A<br>-<br>-<br>100<br>nA| |hFE<br>DC current gain|VCE= 5 V;<br>IC= 100μA<br>100<br>-<br>-| ||VCE= 5 V;<br>IC= 2 mA<br>110<br>-<br>800| |VCEsat<br>collector-emitter saturation<br>voltage|IC= 10 mA;<br>IB= 0.5 mA<br>-<br>90<br>250<br>mV| ||IC= 100 mA;<br>IB= 5 mA<br>-<br>200<br>600<br>mV| |VBEsat<br>base-emitter saturation voltage|IC= 10 mA;<br>IB= 0.5 mA<br>[1]<br>-<br>700<br>-<br>mV| ||IC= 100 mA;<br>IB= 5 mA<br>[1]<br>-<br>900<br>-<br>mV| |VBE<br>base-emitter voltage|IC= 2 mA;<br>VCE= 5 V<br>[2]<br>580<br>660<br>700<br>mV| ||IC= 10 mA;<br>VCE= 5 V<br>[2]<br>-<br>-<br>770<br>mV| |fT<br>transition frequency|VCE= 5 V;<br>IC= 10 mA;<br>f = 100 MHz<br>100<br>-<br>-<br>MHz| |Cc<br>collector capacitance|VCB= 10 V;<br>IE= ie= 0 A;<br>f = 1 MHz<br>-<br>2.5<br>-<br>pF| |NF<br>noise figure|VCE= 5 V;<br>IC= 200μA;<br>RS= 2 kΩ;<br>f = 1 kHz;<br>B = 200 Hz<br>-<br>-<br>10<br>dB| © NXP B.V. 2009. All rights reserved. BCV61_4 **Product data sheet** **Rev. 04 — 18 December 2009** **3 of 13** **BCV61** **NXP Semiconductors** **NPN general-purpose double transistors** ## **Table 7. Characteristics** _…continued_ ## _Tj = 25_ ° _C unless otherwise specified._ |**Symbol**<br>**Parameter**|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---|---| |**Transistor TR2**||| |VEBS|emitter-base voltage|VCB= 0 V;<br>IE=−250 mA<br>-<br>-<br>−1.8<br>V| |||VCB= 0 V;<br>IE=−10μA<br>−400<br>-<br>-<br>mV| |hFE|DC current gain|VCE= 5 V;<br>IC= 2 mA| ||BCV61|110<br>-<br>800| ||BCV61A|110<br>-<br>220| ||BCV61B|200<br>-<br>450| ||BCV61C|420<br>-<br>800| |**Transistors TR1 and TR2**||| |IC1/IE2<br>current matching||IE2=−0.5 mA;<br>VCE1= 5 V| |||Tamb≤25°C<br>0.7<br>-<br>1.3| |||Tamb≤150°C<br>0.7<br>-<br>1.3| |IE2<br>emitter current 2||VCE1= 5 V<br>[3]<br>-<br>-<br>−5<br>mA| - [1] VBEsat decreases by about 1.7 mV/K with increasing temperature. - [2] VBE decreases by about 2 mV/K with increasing temperature. - [3] Device, without emitter resistors, mounted on an FR4 PCB. © NXP B.V. 2009. All rights reserved. BCV61_4 **Product data sheet** **Rev. 04 — 18 December 2009** **4 of 13** **BCV61** **NXP Semiconductors** **NPN general-purpose double transistors** **==> picture [484 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> mgt723 mgt724<br>400 1200<br>VBE<br>hFE (mV)<br>1000<br>(1)<br>300<br>(1)<br>800<br>(2)<br>200 (2) 600<br>(3)<br>400<br>(3)<br>100<br>200<br>0 0<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA) IC (mA)<br>VCE = 5 V VCE = 5 V<br>(1) Tamb = 150 °C (1) Tamb = −55 °C<br>(2) Tamb = 25 °C (2) Tamb = 25 °C<br>(3) Tamb = −55 °C (3) Tamb = 150 °C<br>Fig 1. BCV61A: DC current gain as a function of Fig 2. BCV61A: Base-emitter voltage as a function of<br>collector current; typical values collector current; typical values<br>**----- End of picture text -----**<br> **==> picture [482 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> mgt725 mgt726<br>10 [3] 1200<br>VBEsat<br>VCEsat (mV)<br>(mV) 1000<br>(1)<br>800<br>(2)<br>10 [2] 600<br>(1)<br>(3)<br>(2)<br>400<br>(3)<br>200<br>10 0<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA) IC (mA)<br>IC/IB = 20 IC/IB = 10<br>(1) Tamb = 150 °C (1) Tamb = −55 °C<br>(2) Tamb = 25 °C (2) Tamb = 25 °C<br>(3) Tamb = −55 °C (3) Tamb = 150 °C<br>Fig 3. BCV61A: Collector-emitter saturation voltage Fig 4. BCV61A: Base-emitter saturation voltage as a<br>as a function of collector current; typical function of collector current; typical values<br>values<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. BCV61_4 **Product data sheet** **Rev. 04 — 18 December 2009** **5 of 13** **BCV61** **NXP Semiconductors** **NPN general-purpose double transistors** **==> picture [497 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> mgt727 mgt728<br>600 1200<br>hFE VBE<br>(mV)<br>500 (1) 1000<br>(1)<br>400 800<br>(2) (2)<br>300 600<br>200 400 (3)<br>(3)<br>100 200<br>0 0<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA) IC (mA)<br>VCE = 5 V VCE = 5 V<br>(1) Tamb = 150 °C (1) Tamb = −55 °C<br>(2) Tamb = 25 °C (2) Tamb = 25 °C<br>(3) Tamb = −55 °C (3) Tamb = 150 °C<br>Fig 5. BCV61B: DC current gain as a function of Fig 6. BCV61B: Base-emitter voltage as a function of<br>collector current; typical values collector current; typical values<br>mgt729 mgt730<br>10 [4] 1200<br>VBEsat<br>VCEsat (mV)<br>(mV) 1000<br>(1)<br>10 [3] 800<br>(2)<br>600<br>(3)<br>10 [2] 400<br>(1)<br>(3) (2) 200<br>10 0<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA) IC (mA)<br>IC/IB = 20 IC/IB = 10<br>(1) Tamb = 150 °C (1) Tamb = −55 °C<br>(2) Tamb = 25 °C (2) Tamb = 25 °C<br>(3) Tamb = −55 °C (3) Tamb = 150 °C<br>Fig 7. BCV61B: Collector-emitter saturation voltage Fig 8. BCV61B: Base-emitter saturation voltage as a<br>as a function of collector current; typical function of collector current; typical values<br>values<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. BCV61_4 **Product data sheet** **Rev. 04 — 18 December 2009** **6 of 13** **BCV61** **NXP Semiconductors** **NPN general-purpose double transistors** **==> picture [497 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> mgt731 mgt732<br>1200 1200<br>hFE VBE<br>(mV)<br>1000 1000<br>(1)<br>(1)<br>800 800<br>(2)<br>(2)<br>600 600<br>400 400 (3)<br>(3)<br>200 200<br>0 0<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA) IC (mA)<br>VCE = 5 V VCE = 5 V<br>(1) Tamb = 150 °C (1) Tamb = −55 °C<br>(2) Tamb = 25 °C (2) Tamb = 25 °C<br>(3) Tamb = −55 °C (3) Tamb = 150 °C<br>Fig 9. BCV61C: DC current gain as a function of Fig 10. BCV61C: Base-emitter voltage as a function of<br>collector current; typical values collector current; typical values<br>mgt733 mgt734<br>10 [4] 1200<br>VBEsat<br>VCEsat (mV)<br>(mV) 1000<br>(1)<br>10 [3] 800<br>(2)<br>600<br>(3)<br>10 [2] 400<br>(1)<br>200<br>(3) (2)<br>10 0<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA) IC (mA)<br>IC/IB = 20 IC/IB = 10<br>(1) Tamb = 150 °C (1) Tamb = −55 °C<br>(2) Tamb = 25 °C (2) Tamb = 25 °C<br>(3) Tamb = −55 °C (3) Tamb = 150 °C<br>Fig 11. BCV61C: Collector-emitter saturation voltage Fig 12. BCV61C: Base-emitter saturation voltage as a<br>as a function of collector current; typical function of collector current; typical values<br>values<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. BCV61_4 **Product data sheet** **Rev. 04 — 18 December 2009** **7 of 13** **BCV61** **NXP Semiconductors** **NPN general-purpose double transistors** **==> picture [361 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> mbk082<br>30<br>VCE1max IE2 =<br>(V) 1 mA<br>20<br>5 mA<br>10 10 mA<br>50 mA<br>0<br>10 [−][1] 1 10 RE (Ω) 10 [2]<br>**----- End of picture text -----**<br> **==> picture [42 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> IC1/IE2 = 1.3<br>**----- End of picture text -----**<br> **Fig 13. Maximum collector-emitter voltage as a function of emitter resistance** ## **8. Test information** **==> picture [397 x 257] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>IC1 2 1<br>VCE1 TR1 TR2 IE2 =<br>constant<br>3 4<br>006aaa831<br>Fig 14. Test circuit current matching<br>A<br>IC1 2 1<br>VCE1 TR1 TR2 IE2 =<br>constant<br>3 4<br>RE RE<br>006aab977<br>Fig 15. BCV61 with emitter resistors<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. BCV61_4 **Product data sheet** **Rev. 04 — 18 December 2009** **8 of 13** **BCV61** **NXP Semiconductors** **NPN general-purpose double transistors** ## **9. Package outline** **==> picture [237 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.8 1.1<br>1.9 0.9<br>4 3<br>0.45<br>0.15<br>2.5 1.4<br>2.1 1.2<br>1 2<br>0.88 0.48 0.15<br>0.78 0.38 0.09<br>1.7<br>Dimensions in mm 04-11-16<br>**----- End of picture text -----**<br> **Fig 16. Package outline SOT143B** ## **10. Packing information** **Table 8. Packing methods** _The indicated -xxx are the last three digits of the 12NC ordering code.[[][1][]]_ |**Type number**<br>**Package**<br>**Description**|**Packing quantity**|**Packing quantity**| |---|---|---| ||**3000**|**10000**| |BCV61<br>SOT143B<br>4 mm pitch, 8 mm tape and reel<br>BCV61A<br>BCV61B<br>BCV61C|-215<br>-235|| [1] For further information and the availability of packing methods, see Section 14. © NXP B.V. 2009. All rights reserved. BCV61_4 **Product data sheet** **Rev. 04 — 18 December 2009** **9 of 13** **BCV61** **NXP Semiconductors** **NPN general-purpose double transistors** ## **11. Soldering** **==> picture [338 x 226] intentionally omitted <==** **----- Start of picture text -----**<br> 3.25<br>0.6<br>(3×)<br>0.5<br>(3×)<br>1.9<br>solder lands<br>0.7 0.6<br>(3×) (3×)<br>solder resist<br>2 3 solder paste<br>occupied area<br>0.7 0.6<br>Dimensions in mm<br>0.75 0.95<br>0.9<br>1 sot143b_fr<br>**----- End of picture text -----**<br> **==> picture [191 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Fig 17. Reflow soldering footprint SOT143B<br>**----- End of picture text -----**<br> **==> picture [356 x 246] intentionally omitted <==** **----- Start of picture text -----**<br> 4.45<br>2.2<br>1.2<br>(3×)<br>1.425<br>(3×)<br>solder lands<br>solder resist<br>4.6 2.575<br>occupied area<br>Dimensions in mm<br>1.425<br>preferred transport direction during soldering<br>1<br>1.2 sot143b_fw<br>**----- End of picture text -----**<br> **Fig 18. Wave soldering footprint SOT143B** © NXP B.V. 2009. All rights reserved. BCV61_4 **Product data sheet** **Rev. 04 — 18 December 2009** **10 of 13** **BCV61** **NXP Semiconductors** **NPN general-purpose double transistors** ## **12. Revision history** |**Table 9.**|**Revision**|**history**||||| |---|---|---|---|---|---|---| |**Document**|**ID**|**Release date**|**Data sheet status**||**Change notice**|**Supersedes**| |BCV61_4||20091218|Product data sheet||-|BCV61_3| |Modifications:||**•** The format of this data sheet has been redesigned to comply with the new identity||||| |||guidelines|of NXP Semiconductors.|||| |||**•** Legal texts have been adapted to the new company name where appropriate.||||| |||**•** Section 3“<br>Ordering information<br>”<br>:added||||| |||**•** Section 4“<br>Marking<br>”<br>:updated||||| |||**•** Figure 1<br>,2<br>, 3<br>,4<br>,5<br>,6<br>,7<br>, 8<br>,9<br>,10<br>,11<br>||and12<br>: added||| |||**•** Section 8“<br>Test information<br>”<br>:added||||| |||**•** Figure 16<br>:superseded by minimized package outline drawing||||| |||**•** Section 10|“<br>Packing information<br>”<br>:added|||| |||**•** Section 11|“<br>Soldering<br>”<br>:added|||| |||**•** Section 13|“<br>Legal information<br>”<br>:updated|||| |||||||| |BCV61_3||19990408|Product specification||-|BCV61_CNV_2| |BCV61_CNV_2||19970616|Product specification||-|-| © NXP B.V. 2009. All rights reserved. BCV61_4 **Product data sheet** **Rev. 04 — 18 December 2009** **11 of 13** **BCV61** **NXP Semiconductors** **NPN general-purpose double transistors** ## **13. Legal information** ## **13.1 Data sheet status** |**Document status[1]**<br>**[2]**|**Product statu**~~**s**~~**[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **13.2 Definitions** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. ## **13.3 Disclaimers** **General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ## **13.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **14. Contact information** For more information, please visit: **http://www.nxp.com** For sales office addresses, please send an email to: **salesaddresses@nxp.com** © NXP B.V. 2009. All rights reserved. BCV61_4 **Product data sheet** **Rev. 04 — 18 December 2009** **12 of 13** **BCV61** **NXP Semiconductors** **NPN general-purpose double transistors** ## **15. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 1**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**6**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 3**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8**| |**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**10**|**Packing information . . . . . . . . . . . . . . . . . . . . . 9**| |**11**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**12**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11**| |**13**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 12**| |13.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12| |13.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |13.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |13.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |**14**|**Contact information. . . . . . . . . . . . . . . . . . . . . 12**| |**15**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**| Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **==> picture [84 x 52] intentionally omitted <==** **© NXP B.V. 2009.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 18 December 2009 Document identifier: BCV61_4**
Updated at June 10, 2026
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