BCR141E6327HTSA1
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 22 kohm, 22 kohm
- Manufacturer: INFINEON
- Product type: Pre-Biased / Digital Bipolar Transistors
- Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Ba; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (08-Jul-2021)
- No. of Pins: 3 Pin
- Product Range: BCR141 Series
- Qualification: AEC-Q101
- Power Dissipation: 250mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: Single NPN
- Transistor Case Style: SOT-23
- Base Input Resistor R1: 22kohm
- DC Current Gain hFE Min: 50hFE
- Base Emitter Resistor R2: 22kohm
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max NPN: 50V
- Collector Emitter Voltage Max PNP: -
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.056 € |
| Current stock | 1000+ |
| Lead time | 7 days |
SIEMENS BCR 141 ## NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit **==> picture [173 x 119] intentionally omitted <==** **----- Start of picture text -----**<br> Ses<br>2<br>i] SXX~ 2<br>| Aa) ' VPSOS161<br>(Pin Configuration Configuration Package<br>**----- End of picture text -----**<br> **==> picture [161 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> ¢ Built in bias resistor (Ry=22kQ, Ro=22kQ)<br>**----- End of picture text -----**<br> **==> picture [325 x 234] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |Type|[Marking|| Ordering Code|(Pin Configuration Configuration| |Maximum|Ratings| |Parameter|symbol|Values——|[Unit| |Collector-emitter voltage|ceo|||[OV]| |Collector-base voltage|ooo||| |Emitter-base|voltage| |TotalDC collectorpower|currentdissipation,|Ts|=|102°C|Wo||0|magmw| |Junction|temperature|°C| |Storage|temperature|-|65...|+|150| |Thermal|Resistance| |Junction ambient”|[na|||[S350]|KW| **----- End of picture text -----**<br> 1) Package mounted on peb 40mm x 40mm x 1.5mm / 6em? Cu Semiconductor Group 635 11.96 BCR 141 ## SIEMENS ## Electrical Characteristics at 7,=25°C, unless otherwise specified |||[min<br>[typ<br>max.|[min<br>[typ<br>max.|[min<br>[typ<br>max.|[min<br>[typ<br>max.||| |---|---|---|---|---|---|---|---| |DC Characteristics|||||||| |Collector-emitter breakdown voltage||ViBR)CEO|||||Vv| |Collector-base breakdown voltage||Viar)ycBo|||||| |Collector cutoff current||lcs0|||||nA| |Emitter cutoff current||lEBo|||||pA| |DC current gain<br>Io=5MA, Vop=5V<br>Collector-emittersaturation voitage 1)<br>Io = 10 MA, Ig= 0.5MA||VoEsat<br>||fre<br>VoEsat|||<br>|_<br>0.3||||-<br>Vv| |Input off voltage<br>I=100pA,Vog=5V<br>Input on Voltage<br>Io= 2MA, Voge=0.3V<br>input resistor<br>Resistor ratio|Viott<br>a<br>a<br>Vion)<br>fk<br>ee |<br>FR,|15<br>|22<br>jag<br>kQ<br>Ry/Ro<br>log =[1 1.1<br>ie||||||| |AC Characteristics|||||||| |Transitionfrequency<br>Io = 10 MA, Veg<br>= 5 V, f= 100MHz<br>Collector-basecapacitance<br>Vop<br>= 10 V,f=1MHz||fr<br>Cob||<br>-|dao |<br>130<br>, |<br>3|a<br>-||MHz<br>pF| |1)Pulsetest:<br>t<300us;D<2%|||||||| Semiconductor Group 636 11.96 BCR 141 ## SIEMENS DC Current Gain hee = f (Ic) Voge = 5V (common emitter configuration) Collector-Emitter Saturation Voltage Voesat = A/c), Mee = 20 **==> picture [338 x 425] intentionally omitted <==** **----- Start of picture text -----**<br> 108 a —— —<br>Sesaienaa esa a<br>LMT —<br>E— Crit A | ot<br>EHH |<br>CZ |<br>1) a nut 10 Ly a one<br>Wat ———<br>: | ae ee eens eee oe Sa)<br>ettCamel isemeaiil esa oovan i aSp<br>CTC CST to<br>wool. LLMEAALLL LE foo Bei a atid<br>107 10° 10° mA 0.0 0.2 0.4 06 Vv 1.0<br>ee ——™ Voesat<br>Input on on Voltage Vion) = = fc) Input off voltage Vor = Alc)<br>Voge = = 0.3V (common emitter configuration) Voe = 5V (common emitter configuration)<br>10? <a. et ee 19 * __._____.____-—_, ———<br>mal KeTTTeaaon mA TTre es4 a—<br>1 | _—— ee ee<br>t COU i ee<br>i ° Stee eaeiilteeey Seca eseioee eeeiiiti f Soee<br>FA ae a a en<br>ioe milCEis esa LE ( a1 ]Oe 7<br>esBu aaanittfr ee He|| oe=ee ae [po3<br>eenesis aeeeeeitLl LUal —— pr _|<br>eeetnaeeeee on<br>COO SSS<br>Se Pr it ——<br>10+10" BU40° ELA 10! Li v iH 4000oeO08 |10 15 ee20 V ee30<br>—t Vion Vion<br>**----- End of picture text -----**<br> Input on on Voltage Vion) = = fc) Voge = = 0.3V (common emitter configuration) Semiconductor Group 637 11.96 BCR 141 ## SIEMENS ## Total power dissipation P,., = f(T"; Ts) * Package mounted on epoxy **==> picture [326 x 395] intentionally omitted <==** **----- Start of picture text -----**<br> mW<br>200<br>a THN<br>.<br>\<br>\<br>020 40 60 80 100—r120 pretars<br>Pulse Load Ainys = ftp) Permissible Pulse Load Piotmax / Ptotoc =<br>10° eaEr 10°Oooo<br>Sect: meet it i sesist aeecsts eesti! eet Pe Het<br>KW TTBeCOTTE Tn aEBe| | SY | |at<br>A STMT TIME TT TTTTTC<br>CER’ LUI PemnePreod - AAC UTM UTM TTI ITE TT<br>CTetrT SnTNae PSSMECHMISRRRCCTIT 0.05I-o.02 —HoHCOM Cem<br>10 BRRTTTAFT SENET 0.05 <TH TTI<br>BariFSSeae EE COST Coo TC Ct<br>LaeFamaeaeSree.Soe1PRES?SOlb:SS 0.5 SausageConcCTF COTHIbotDSSiToeet iH 0.5 TTT|| TTTUl<br>CTATTS SUIS S os CIT 10tLiLE<br>‘oo 4 TATCHS 0.02oot HUILAMAA| Ll EFCH EHeo penisaHPet<br>coo lgee8ITEC|| AS| ' || = CoFTll Tel wooCOATTnI [4] AITTTT TAHOEtta TOSSis S| T TTT<br>to® 10° 10% 107% 107a al"0 s 10° 10° 10° 10% 10° 10—e10| s 10<br>**----- End of picture text -----**<br> ## Permissible Pulse Load Ainys = ftp) Permissible Pulse Load Piotmax / Ptotoc = Atp) Semiconductor Group 638 11.96
Updated at March 3, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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