BCR133E6327HTSA1
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 50 V, 100 mA, 10 kohm, 10 kohm
- Manufacturer: INFINEON
- Product type: Pre-Biased / Digital Bipolar Transistors
- Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1(Ratio); RF
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3 Pin
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: Single NPN
- Transistor Case Style: SOT-23
- Base Input Resistor R1: 10kohm
- DC Current Gain hFE Min: 30hFE
- Base Emitter Resistor R2: 10kohm
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max NPN: 50V
- Collector Emitter Voltage Max PNP: 50V
| Delivery and price | |
|---|---|
| Units per pack | 19500 |
| Price | 0.034 € |
| Current stock | 1000+ |
| Lead time | 7 days |
SIEMENS
BCR 133
## NPN Silicon Digital Transistor
- Switching circuit, inverter, interface circuit, driver circuit
|driver circuitcircuit|||iS|
|---|---|---|---|
|* Built in bias resistor (Ry=10kQ, Ro=10kQ)|||,|
|||fl|Sx<br>2<br>io|
|||4<br>a)|u<br>¥PSO05161|
|Type<br>Marking<br>BOR139 [wes||Ordering Code<br>|Pin Configuration<br>Package<br>|a62702.c2a56<br>SOT-29|||
|Maximum Ratings<br>Parameter<br>Collector-emiter voltage||Symbol <br>el||______<br>Values ‘(Unit|
|Totalpowerdissipation,|7g=102°C|[An ||+<br>200.~~~~«<mw|
|Storagetemperature|||-65...+150|
## Thermal Resistance
1) Package mounted on peb 40mm x 40mm x 1.5mm / Gem? Cu
Semiconductor Group
611
11.96
SIEMENS
BCR 133
|Electrical Characteristics at T,=25°C, <br>Parameter|unless otherwise specified<br>Symbol|__Values——_—_—_—(unit<br>ee|unless otherwise specified<br>Symbol|__Values——_—_—_—(unit<br>ee|unless otherwise specified<br>Symbol|__Values——_—_—_—(unit<br>ee|
|---|---|---|---|
|DC Characteristics||||
|Collector-emitter breakdownvoltage|VipryCcEO||Vv|
|Collector-base breakdown voltage|ViBR)CBO|||
|Collectorcutoffcurrent|lcoBo||nA|
|Emitter cutoff current|leBo||pA|
|DC current gain|hee||-|
|Collector-emitter saturation voltage 1)||Vcgsat||Vv|
|Input off voltage|Viotty|||
|InputonVoltage<br>Io=2MA, Veg = 0.3V<br>input resistor<br>Resistorratio|Vicon) yo<br>RA, [7 <br>a|tes |<br> totkQ<br>a|kQ<br>-|
## AC Characteristics
|AC Characteristics|||
|---|---|---|
|Transition frequency<br>Io = 10 MA,Vog<br>=5V,f=100MHz|fr<br> el|MHz|
|Collector-base capacitance|Cob|pF|
|1)Pulsetest:<br>t<br><300us;D<2%|||
Semiconductor Group
612
11.96
BCR 133
## SIEMENS
DC Current Gain hee = f (ic) Vor = 5V (common emitter configuration)
Collector-Emitter Saturation Voltage Voesat = Kic), fre = 20
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Input on on Voltage Vion)== f/c) Voge = 0.3V (common emitter configuration)
Semiconductor Group
613
11.96
BCR 133
## SIEMENS
Total power dissipation Pio = f(T"; Ts) * Package mounted on epoxy
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## Permissible Pulse Load Finjs = ftp)
Permissible Pulse Load Ptotmax/ Ptotoc = Ktp)
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Semiconductor Group
614
11.96
Updated at March 3, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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