BCR112E6327HTSA1

Bipolar (BJT) Single Transistor, NPN, 50 V, 100 mA, 200 mW, SOT-23, Surface Mount

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Manufacturer: INFINEON
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:-; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:-; Power Dissipation Pd:-; DC Collector Current:-; DC Current Gain hFE:-; Transistor Case St
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 200mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 140MHz
Transistor Case Style: SOT-23
DC Current Gain hFE Min: 20hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 100mA
Collector Emitter Voltage Max: 50V

Delivery and price
Units per pack	19500
Price	0.073 €
Current stock	1000+
Lead time	7 days

Datasheet

**BCR112...** 

## **NPN Silicon Digital Transistor** 

- Switching circuit, inverter, interface circuit, 

driver circuit 

- Built in bias resistor ( _R_ 1=4.7kΩ, _R_ 2=4.7kΩ) 

- Pb-free (RoHS compliant) package 

- Qualified according AEC Q101 

## **BCR112 BCR112W** 

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C<br>[| 3<br>R 1<br>R  2<br>1 2<br>| :<br>B E<br>EHA07184<br>**----- End of picture text -----**<br>


|**Type**|**Marking**|**g**<br>**Pin Configuration**|**g**<br>**Pin Configuration**|**g**<br>**Pin Configuration**|**g**<br>**Pin Configuration**|**g**<br>**Pin Configuration**|**g**<br>**Pin Configuration**|**Package**|
|---|---|---|---|---|---|---|---|---|
|BCR112<br>BCR112W|WFs<br>WFs|1=B<br>1=B|2=E<br>2=E|3=C<br>3=C|-<br>-|-<br>-|-<br>-|SOT23<br>SOT323|



## **Maximum Ratings** 

|**Maximum Ratingsgss**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Collector-emitter voltage|_V_CEO|50|V|
|Collector-base voltage|_V_CBO|50||
|Input forward voltage|_V_i(fwd)|30||
|Input reverse voltage|i(fwd)<br>_V_i(rev)|10||
|Collector current|i(rev)<br>_I_C|100|mA|
|Total power dissipation-<br>BCR112,_T_S ≤102°C<br>BCR112W,_T_S ≤124°C|_P_tot|200<br>250|mW|
|Junction temperature|_T_j|150|°C|
|Storage temperature|j<br>_T_stg|-65 ... 150||



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**BCR112...** 

|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction - soldering point1)<br>BCR112<br>BCR112W|_R_thJS|≤240<br>≤105|K/W|



> 1For calculation of _R_ thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 

|1For calculation of_R_thJA please refer to Application Note AN077 (Thermal Resistance Calculation)|1For calculation of_R_thJA please refer to Application Note AN077 (Thermal Resistance Calculation)|1For calculation of_R_thJA please refer to Application Note AN077 (Thermal Resistance Calculation)|1For calculation of_R_thJA please refer to Application Note AN077 (Thermal Resistance Calculation)|1For calculation of_R_thJA please refer to Application Note AN077 (Thermal Resistance Calculation)|1For calculation of_R_thJA please refer to Application Note AN077 (Thermal Resistance Calculation)|
|---|---|---|---|---|---|
|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified||||||
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage<br>_I_C= 100 µA,_I_B= 0|_V_(BR)CEO|50|-|-|V|
|Collector-base breakdown voltage<br>_I_C= 10 µA,_I_E= 0|_V_(BR)CBO|50|-|-||
|Collector-base cutoff current<br>_V_CB= 40 V,_I_E= 0|_I_CBO|-|-|100|nA|
|Emitter-base cutoff current<br>_V_EB= 10 V,_I_C= 0|_I_EBO|-|-|1.61|mA|
|DC current gain1)<br>_I_C= 5 mA,_V_CE= 5 V|_h_FE|20|-|-|-|
|Collector-emitter saturation voltage1)<br>_I_C= 10 mA,_I_B= 0.5 mA|_V_CEsat|-|-|0.3|V|
|Input off voltage<br>_I_C= 100 µA,_V_CE= 5 V|_V_i(off)|0.8|-|1.5||
|Input on voltage<br>_I_C= 2 mA,_V_CE= 0.3 V|_V_i(on)|1|-|2.5||
|Input resistor|_R_1|3.2|4.7|6.2|kΩ|
|Resistor ratio|_R_1/_R_2|0.9|1|1.1|-|
|**AC Characteristics**||||||
|Transition frequency<br>_I_C= 10 mA,_V_CE= 5 V,_f_= 100 MHz|_f_T|-|140|-|MHz|
|Collector-base capacitance<br>_V_CB= 10 V,_f_= 1 MHz|_C_cb|-|3|-|pF|



1Pulse test: t < 300µs; D < 2% 

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**BCR112...** 

## **DC current gain** _h_ FE =  ƒ( _I_ C) 

_V_ CE = 5 V (common emitter configuration) 

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10 3<br>10 2<br>10 1<br>-40 °C<br>-25 °C<br>10 0  25 °C<br>85 °C<br>125 °C<br>10 -1<br>10  [-4 ] 10  [-3 ] 10  [-2 ] A 10  [-1 ]<br>I C<br>FE<br>h<br>**----- End of picture text -----**<br>


**Input on Voltage** _Vi_ (on) = ƒ( _I_ C) 

_V_ CE = 0.3V (common emitter configuration) 

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10 1<br>-40 °C<br>-25 °C<br>V 25 °C<br>85 °C<br>125 °C<br>10 0<br>10 -1<br>10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] A 10  [-1 ]<br>I C<br>i(on)<br>V<br>**----- End of picture text -----**<br>


## **Collector-emitter saturation voltage** 

_V_ CEsat = ƒ( _I_ C), _I_ C _/I_ B = 20 

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0.5<br>V<br>0.4<br>0.35<br>0.3<br>0.25 -40 °C<br>-25 °C<br>0.2 25  ° C<br>85 °C<br>125 °C<br>0.15<br>0.1<br>0.05<br>0<br>10  [-3 ] 10  [-2 ] A 10  [-1 ]<br>I C<br>Vcesat<br>**----- End of picture text -----**<br>


**Input off voltage** _V_ i(off) =  ƒ( _I_ C) 

_V_ CE = 5V (common emitter configuration) 

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10 1<br>-40 °C<br>-25 °C<br>V 25 °C<br>85 °C<br>125 °C<br>10 0<br>10 -1<br>10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] A 10  [-1 ]<br>I C<br>i(off)<br>V<br>**----- End of picture text -----**<br>


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**BCR112...** 

**Total power dissipation** _P_ tot = ƒ( _T_ S) BCR112 

**Total power dissipation** _P_ tot = ƒ( _T_ S) BCR112W 

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300<br>mW<br>250<br>225<br>200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 15 30 45 60 75 90 105 120 °C 150<br> T S<br>tot<br> P<br>**----- End of picture text -----**<br>


**Permissible Pulse Load** _R_ thJS =  ƒ( _t_ p) BCR112 

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300<br>mW<br>250<br>225<br>200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 15 30 45 60 75 90 105 120 °C 150<br>T S<br>tot<br>P<br>**----- End of picture text -----**<br>


## **Permissible Pulse Load** 

_P_ totmax/ _P_ totDC =  ƒ( _t_ p) BCR112 

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10 3  10 3<br>K/W<br>-<br>10 2<br>D = 0<br>10 2  0.005<br>0.01<br>0.02<br>10 1  0.05<br>0.1<br>0.5<br>0.2<br>0.2<br>0.5<br>0.1<br>0.05 10 1<br>10 0  0.02<br>0.01<br>0.005<br>D = 0<br>10 -1  10 0<br>10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>t t<br>p p<br>totDC<br> P<br> /<br>thJS totmax<br>R P<br>**----- End of picture text -----**<br>


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**BCR112...** 

**Permissible Puls Load** _R_ thJS = ƒ ( _t_ p) BCR112W 

## **Permissible Pulse Load** 

_P_ totmax/ _P_ totDC =  ƒ( _t_ p) BCR112W 

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10 3  10 3<br>K/W<br>-<br>10 2<br>D = 0<br>10 2  0.005<br>0.01<br>0.02<br>10 1  0.05<br>0.1<br>0.5<br>0.2<br>0.2<br>0.5<br>0.1<br>0.05 10 1<br>10 0  0.02<br>0.01<br>0.005<br>D = 0<br>10 -1  10 0<br>10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>t t<br>p p<br>totDC<br>P<br> /<br>thJS<br>totmax<br> R P<br>**----- End of picture text -----**<br>


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**Package SOT23** 

**BCR112...** 

## Package Outline 

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1±0.1<br>2.9 ±0.1 0.1 MAX.<br>B<br>3<br>1 2<br>+0.1 1)<br>0.4 -0.05 A<br>C<br>0.95<br>1.9<br>0.25 M B C 0.2 M A<br>1) Lead width can be 0.6 max. in dambar area<br>0.8<br>0.8 1.2<br>Manufacturer<br>2005, June<br>EH s Date code (YM)<br>Pin 1 BCW66<br>Type code<br>0...8˚<br>0.08...0.15<br>0.15 MIN.<br> ±0.15 ±0.1<br>2.4 1.3<br>10˚ MAX. 10˚ MAX.<br>0.9<br>1.3<br>0.9<br>**----- End of picture text -----**<br>


Foot Print 

## Marking Layout (Example) 

## Standard Packing 

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 

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4<br>0.9 0.2<br>Pin 1 3.15 1.15<br>2.13 2.65<br>8<br>**----- End of picture text -----**<br>


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**Package SOT323** 

**BCR112...** 

## Package Outline 

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2 ±0.2 0.9 ±0.1<br>0.1 MAX.<br>0.3 [+0.1] -0.05 3x<br>0.1 M 0.1<br>A<br>3<br>1 2<br>0.65 0.65 0.15 [+0.1] -0.05<br>0.2 M A<br>±0.1  ±0.1<br>2.1 0.1 MIN. 1.25<br>**----- End of picture text -----**<br>


## Foot Print 

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0.6<br>0.65<br>0.65<br>1.6<br>0.8<br>**----- End of picture text -----**<br>


## Marking Layout (Example) 

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Manufacturer<br>2005, June<br>Date code (YM)<br>Pin 1 BCR108W<br>Type code<br>**----- End of picture text -----**<br>


## Standard Packing 

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 

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4 0.2<br>Pin 1 2.15 1.1<br>8<br>2.3<br>**----- End of picture text -----**<br>


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**BCR112...** 

## **Edition 2009-11-16** 

**Published by Infineon Technologies AG 81726 Munich, Germany** 

##  **2009 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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Updated at March 24, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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