BCP69T1G

## BCP69T1G, NSVBCP69T1G 

## PNP Silicon Epitaxial Transistor 

This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. 

## **Features** 

- High Current: IC = −1.0 A 

- The SOT−223 Package Can Be Soldered Using Wave or Reflow. 

- SOT−223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. 

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## **MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT** 

- NPN Complement is BCP68 

- AEC−Q101 Qualified and PPAP Capable 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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COLLECTOR 2,4<br>BASE<br>1<br>©<br>EMITTER 3<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) **MARKING Rating Symbol Value Unit DIAGRAM** 4 Collector−Emitter Voltage VCEO −20 Vdc 1 2 Collector−Base Voltage VCBO −25 Vdc 3 AYW CE Emitter−Base Voltage VEBO −5.0 Vdc **SOT−223 (TO−261) CASE 318E** Collector Current IC −1.0 Adc **STYLE 1** Total Power Dissipation @ TA = 25 ° C (Note 1) PD 1.5 W Derate above 25 ° C 12 mW/ ° C CE = Specific Device Code Operating and Storage Temperature Range TJ, Tstg −65 to ° C A = Assembly Location 150 Y = Year ~~=~~ eee **THERMAL CHARACTERISTICS** W = Work Week = Pb−Free Package **Characteristic Symbol Max Unit** (*Note: Microdot may be in either location) Thermal Resistance − Junction−to−Ambient R JA 83.3 ° C/W (Surface Mounted) Lead Temperature for Soldering, TL 260 ° C **ORDERING INFORMATION** 0.0625 in from case **Device Package Shipping**[†] Time in Solder Bath 10 s BCP69T1G SOT−223 1000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended (Pb−Free) Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NSVBCP69T1G SOT−223 1000 / Tape & Reel 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. (Pb−Free) ~~=~~ x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **BCP69T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. 11** 

## **BCP69T1G, NSVBCP69T1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise not|ed)|||||
|---|---|---|---|---|---|
|**Characteristics**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage (IC= −100�Adc, IE= 0)|V(BR)CES|−25|−|−|Vdc|
|Collector−Emitter Breakdown Voltage (IC= −1.0 mAdc, IB= 0)|V(BR)CEO|−20|−|−|Vdc|
|Emitter−Base Breakdown Voltage (IE= −10�Adc, IC= 0)|V(BR)EBO|−5.0|−|−|Vdc|
|Collector−Base Cutoff Current (VCB= −25 Vdc, IE= 0)|ICBO|−|−|−10|�Adc|
|Emitter−Base Cutoff Current (VEB= −5.0 Vdc, IC= 0)|IEBO|−|−|−10|�Adc|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= −5.0 mAdc, VCE= −10 Vdc)<br>(IC= −500 mAdc, VCE= −1.0 Vdc)<br>(IC= −1.0 Adc, VCE= −1.0 Vdc)|hFE|50<br>85<br>60|−<br>−<br>−|−<br>375<br>−|−|
|Collector−Emitter Saturation Voltage (IC= −1.0 Adc, IB= −100 mAdc)|VCE(sat)|−|−|−0.5|Vdc|
|Base−Emitter On Voltage (IC= −1.0 Adc, VCE= −1.0 Vdc)|VBE(on)|−|−|−1.0|Vdc|
|**DYNAMIC CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mAdc, VCE= −5.0 Vdc)|fT|−|60|−|MHz|



## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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400<br>150 ° C VCE = 1 V<br>300<br>25 ° C<br>200<br>−55 ° C<br>100<br>0<br>0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>


**Figure 1. DC Current Gain** 

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300<br>200<br>100<br>V CE  = -10 V<br>70 TJ = 25°C<br>f = 30 MHz<br>50<br>30<br>-10 -100 -1000<br>IC, COLLECTOR CURRENT (mA)<br>f   , CURRENT GAIN BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 2. Current Gain Bandwidth Product** 

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**2** 

**BCP69T1G, NSVBCP69T1G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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0.35 1.4<br>IC/IB = 10<br>0.30 IC/IB = 10 150 ° C 1.2<br>0.25<br>1.0<br>0.20 −55 ° C<br>25 ° C 0.8<br>0.15 25 ° C<br>0.6<br>0.10<br>−55 ° C 150 ° C<br>0.4<br>0.05<br>0 0.2<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 3. Collector Emitter Saturation Voltage Figure 4. Base Emitter Saturation Voltage vs.<br>vs. Collector Current Collector Current<br>1.2<br>1.1 VCE = 1 V<br>1.0<br>0.9<br>−55 ° C<br>0.8<br>0.7 25 ° C<br>0.6<br>0.5<br>0.4 150 ° C<br>0.3<br>0.2<br>0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A)<br>Figure 5. Base Emitter Voltage vs. Collector<br>Current<br>160 10<br>T J  = 25°C 10 ms<br>120 1 s 100 ms 1 ms<br>1.0<br>Thermal Limit<br>80<br>C ib �0.1<br>40<br>Single Pulse Test<br>Cob @ TA = 25°C<br>0 0.01<br>Cob -�5.0 -1.0 -1.5 -�2.0 -�2.5 0.1 1.0 10 100<br>Cib -1.0 -�2.0 -�3.0 -�4.0 -�5.0 VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>VR, REVERSE VOLTAGE (VOLTS)<br>, BASE−EMITTER<br>, COLLECTOR−EMITTER<br>BE(sat)<br>V<br>SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER VOLTAGE (V)<br>BE(on)<br>V<br>C, CAPACITANCE (pF)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 7. Safe Operating Area** 

**Figure 6. Capacitances** 

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**3** 

**BCP69T1G, NSVBCP69T1G** 

## **PACKAGE DIMENSIONS** 

**SOT−223 (TO−261)** CASE 318E−04 ISSUE N 

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D<br>b1 NOTES:<br>DIMENSIONING AND TOLERANCING PER ASME Y14.5M,<br>1994.<br>CONTROLLING DIMENSION: INCH.<br>4 MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>HE E A 1.50 1.63 1.75 0.060 0.064 0.068<br>1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004<br>b 0.60 0.75 0.89 0.024 0.030 0.035<br>b1 2.90 3.06 3.20 0.115 0.121 0.126<br>c 0.24 0.29 0.35 0.009 0.012 0.014<br>b D 6.30 6.50 6.70 0.249 0.256 0.263<br>ocean E 3.30 3.50 3.70 0.130 0.138 0.145<br>e1 e 2.20 2.30 2.40 0.087 0.091 0.094<br>a e 2 ——— e1 0.85 0.94 1.05 0.033 0.037 0.041<br>L 0.20 −−− −−− 0.008 −−− −−−<br>C L1 1.50 1.75 2.00 0.060 0.069 0.078<br>A H E 6.70 0° 7.00− 7.301 0° 0.264 0° 0.276− 0.2871 0°<br>0.08 (0003) STYLE 1:<br>RS A1 L pS L1 SSS PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>4. COLLECTOR<br>SOLDERING FOOTPRINT*<br>3.8<br>0.15<br>_ [e] [e]<br>2.0<br>0.079<br>noo,<br>6.3<br>2.3 2.3<br>0.248<br>0.091 0.091<br>2.0<br>0.079<br>1.5 SCALE 6:1 mm<br>0.059 inches<br>EYE) y (4<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**BCP69T1/D** 

**4**