BCP68T1G

BCP68T1G 

## NPN Silicon Epitaxial Transistor 

This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. 

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## **Features** 

## **MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT** 

- High Current 

- The SOT−223 Package Can Be Soldered Using Wave or Reflow 

- SOT−223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die 

COLLECTOR 2,4 The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die BASE • The PNP Complement is BCP69T1 1 • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and EMITTER 3 PPAP Capable* • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 4 Compliant 1 2 3 **MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) **SOT−223 CASE 318E Rating Symbol Value Unit STYLE 1** Collector−Emitter Voltage VCEO 20 Vdc Collector−Base Voltage VCBO 25 Vdc **MARKING DIAGRAM** Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 1.0 Adc AYW CA Collector Current − Peak (Note 2) ICM 3.0 Adc Base Current − Continuous IB 0.4 Adc Base Current − Peak IBM 0.4 Adc CA = Specific Device Code Total Power Dissipation PD A = Assembly Location @ TA = 25 ° C (Note 1) 1.5 W Y = Year Derate above 25 ° C 12 mW/ ° C W = Work Week Operating and Storage Temperature TJ, Tstg −65 to 150 ° C = Pb−Free Package Range (Note: Microdot may be in either location) ~~ao~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be **ORDERING INFORMATION** assumed, damage may occur and reliability may be affected. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. **Device Package Shipping**[†] x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. 2. Reference SOA curve for IC peak. BCP68T1G SOT−223 1,000/Tape & Reel (Pb−Free) **THERMAL CHARACTERISTICS** SBCP68T1G* SOT−223 1,000/Tape & Reel **Characteristic Symbol Max Unit** (Pb−Free) Thermal Resistance, Junction−to−Ambient R JA 83.3 ° C/W BCP68T3G SOT−223 4,000/Tape & Reel (Surface Mounted) ~~=~~ (Pb−Free) Lead Temperature for Soldering, TL 260 ° C †For information on tape and reel specifications, 0.0625 in from case including part orientation and tape sizes, please Time in Solder Bath 10 Sec refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

2. Reference SOA curve for IC peak. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **January, 2014 − Rev. 9** 

**BCP68T1/D** 

## **BCP68T1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise|noted)|||||
|---|---|---|---|---|---|
|**Characteristics**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= 100�Adc, IE= 0)|V(BR)CES|25|−|−|Vdc|
|Collector−Emitter Breakdown Voltage<br>(IC= 1.0 mAdc, IB= 0)|V(BR)CEO|20|−|−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= 10�Adc, IC= 0)|V(BR)EBO|5.0|−|−|Vdc|
|Collector−Base Cutoff Current<br>(VCB= 25 Vdc, IE= 0)|ICBO|−|−|10|�Adc|
|Emitter−Base Cutoff Current<br>(VEB= 5.0 Vdc, IC= 0)|IEBO|−|−|10|�Adc|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= 5.0 mAdc, VCE= 10 Vdc)<br>(IC= 500 mAdc, VCE= 1.0 Vdc)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)|hFE|50<br>85<br>60|−<br>−<br>−|−<br>375<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 1.0 Adc, IB= 100 mAdc)|VCE(sat)|−|−|0.5|Vdc|
|Base−Emitter On Voltage<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)|VBE(on)|−|−|1.0|Vdc|
|**DYNAMIC CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mAdc, VCE= 5.0 Vdc)|fT|−|60|−|MHz|
|Output Capacitance (VCB= 10 Vdc, IE= 0, f = 1.0 MHz)|Cobo|−|15|−|pF|
|Output Capacitance (VEB= 5 Vdc, IE= 0, f = 1.0 MHz)|Cibo|−|145|−|pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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300<br>200<br>300 TJ = 125°C<br>200<br>= 25°C<br>100 100<br>= -55°C<br>70 VCE = 10 V<br>TJ = 25°C<br>50 f = 30 MHz<br>VCE = 1.0 V<br>10 30<br>1.0 10 100 1000 10 100 200 1000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN<br>f�, CURRENT‐GAIN‐BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 1. DC Current Gain** 

**Figure 2. Current-Gain-Bandwidth Product** 

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**2** 

**BCP68T1G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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1.0 80<br>TJ = 25°C T J  = 25°C<br>0.8 VBE(sat) @ IC/IB = 10 70<br>0.6 VBE(on) @ VCE = 1.0 V 60<br>0.4 50<br>0.2 40<br>VCE(sat) @ IC/IB = 10<br>30<br>01.0 10 100 1000 0 1.0 2.0 3.0 4.0 5.0<br>IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)<br>Figure 3. “On” Voltage Figure 4. Capacitance<br>25 -�0.8<br>T J  = 25°C<br>-1.2<br>20<br>-1.6<br>15 R�VB for VBE<br>-�2.0<br>10<br>-�2.4<br>5.0 -�2.8<br>0 5.0 10 15 20 1.0 10 100 1000<br>VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>Figure 5. Capacitance Figure 6. Base−Emitter Temperature<br>Coefficient<br>1.0 10<br>TJ = 25°C<br>0.8<br>100 ms<br>0.6 = 1000 mA<br>1<br>1 ms<br>0.4 IC = 10 mA = 50 mA = 100 mA 10 ms<br>0.2<br>= 500 mA<br>0 0.1<br>0.01 0.1 1.0 10 100 1 10 100<br>IB, BASE CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)<br>V, VOLTAGE (VOLTS)<br>Cib, CAPACITANCE (pF)<br>C)°<br>Cob, CAPACITANCE (pF)<br>VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>R<br>VCE, COLLECTOR VOLTAGE (V) , COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 7. Saturation Region** 

**Figure 8. Safe Operating Area** 

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**3** 

**BCP68T1G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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310<br>300 TJ = 25 ° C<br>290<br>f = 1 MHz<br>280<br>270<br>260<br>250<br>240<br>230<br>220<br>210<br>200<br>190<br>180<br>170<br>160<br>150<br>140<br>130<br>0 1 2 3 4 5<br>VR, REVERSE VOLTAGE (V)<br>, CAPACITANCE (pF)<br>ib<br>C<br>**----- End of picture text -----**<br>


**Figure 9. Input Capacitance** 

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50<br>45 TJ = 25 ° C<br>f = 1 MHz<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25<br>VR, REVERSE VOLTAGE (V)<br>, CAPACITANCE (pF)<br>ob<br>C<br>**----- End of picture text -----**<br>


**Figure 10. Output Capacitance** 

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**4** 

**BCP68T1G** 

## **PACKAGE DIMENSIONS** 

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SOT−223 (TO−261)<br>CASE 318E−04<br>ISSUE N<br>D<br>NOTES:<br>b1 DIMENSIONING AND TOLERANCING PER ASME Y14.5M,<br>1994.<br>CONTROLLING DIMENSION: INCH.<br>4 MILLIMETERS INCHES<br>no. 2 DIM MIN NOM MAX MIN NOM MAX<br>HE E A 1.50 1.63 1.75 0.060 0.064 0.068<br>1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004<br>b 0.60 0.75 0.89 0.024 0.030 0.035<br>b1 2.90 3.06 3.20 0.115 0.121 0.126<br>c 0.24 0.29 0.35 0.009 0.012 0.014<br>b D 6.30 6.50 6.70 0.249 0.256 0.263<br>ocean E 3.30 3.50 3.70 0.130 0.138 0.145<br>e1 e 2.20 2.30 2.40 0.087 0.091 0.094<br>e e e ——— e1 0.85 0.94 1.05 0.033 0.037 0.041<br>L 0.20 −−− −−− 0.008 −−− −−−<br>C L1 1.50 1.75 2.00 0.060 0.069 0.078<br>A H E 6.70 0° 7.00− 7.301 0° 0.264 0° 0.276− 0.2871 0°<br>0.08 (0003) A1 STYLE 1:<br>eS, L SRG L1 SSS PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>4. COLLECTOR<br>SOLDERING FOOTPRINT*<br>3.8<br>0.15<br>oe<br>2.0<br>0.079<br>roy<br>6.3<br>2.3 2.3<br>0.248<br>0.091 0.091<br>2.0<br>0.079<br>1.5 SCALE 6:1 mm<br>ETE 0.059 E (— inches )<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**BCP68T1/D** 

**5**