BCP56T1G

## **ON Semiconductor** 

## **Is Now** 

**==> picture [390 x 69] intentionally omitted <==**

**To learn more about onsemi™, please visit our website at www.onsemi.com** 

**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

## BCP56 Series 

## NPN Silicon Epitaxial Transistor 

These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. 

## **www.onsemi.com** 

## **Features** 

## **MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT** 

- High Current: 1.0 A 

- The SOT−223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die 

- Available in 12 mm Tape and Reel 

**==> picture [87 x 69] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR 2,4<br>BASE<br>1<br>& )<br>EMITTER 3<br>**----- End of picture text -----**<br>


   - Use BCP56T1G to Order the 7 inch/1000 Unit Reel 

   - Use BCP56T3G to Order the 13 inch/4000 Unit Reel 

- PNP Complement is BCP53T1G 

- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 4 ° **MAXIMUM RATINGS** (TC = 25 C unless otherwise noted) 1 2 3 **Rating Symbol Value Unit SOT−223 CASE 318E** Collector−Emitter Voltage VCEO 80 Vdc **STYLE 1** Collector−Base Voltage VCBO 100 Vdc Emitter−Base Voltage VEBO 5 Vdc **MARKING DIAGRAM** Collector Current IC 1 Adc Collector Current − Peak (Note 1) ICM 2 Adc AYW Total Power Dissipation PD XXXXX @ TA = 25 ° C (Note 2) 1.5 W Derate above 25 ° C 12 mW/ ° C 1 Operating and Storage TJ, Tstg −65 to 150 ° C XXXXX = Specific Device Code Temperature Range A = Assembly Location ~~=~~ Y = Year **THERMAL CHARACTERISTICS** W = Work Week **Characteristic Symbol Max Unit** = Pb−Free Package Thermal Resistance, R JA 83.3 ° C/W (Note: Microdot may be in either location) Junction−to−Ambient (surface mounted) **ORDERING INFORMATION** Maximum Temperature for TL Soldering Purposes 260 ° C See detailed ordering, marking and shipping information in thepackage dimensions section on page 5 of this data sheet.package dimensions section on page 5 of this data sheet. Time in Solder Bath 10 Sec ~~aee~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**ORDERING INFORMATION** See detailed ordering, marking and shipping information in thepackage dimensions section on page 5 of this data sheet.package dimensions section on page 5 of this data sheet. 

1. Reference SOA curve. 

2. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2016 **March, 2018 − Rev. 14** 

**BCP56T1/D** 

## **BCP56 Series** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristics**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Base Breakdown Voltage<br>(IC= 100�Adc, IE= 0)|V(BR)CBO|100|−|−|Vdc|
|Collector−Emitter Breakdown Voltage<br>(IC= 1.0 mAdc, IB= 0)|V(BR)CEO|80|−|−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= 10�Adc, IC= 0)|V(BR)EBO|5.0|−|−|Vdc|
|Collector−Base Cutoff Current<br>(VCB= 30 Vdc, IE= 0)|ICBO|−|−|100|nAdc|
|Emitter−Base Cutoff Current<br>(VEB= 5.0 Vdc, IC= 0)|IEBO|−|−|10|�Adc|
|**ON CHARACTERISTICS**(Note 3)||||||
|DC Current Gain<br>(IC= 5.0 mA, VCE= 2.0 V)<br>All Part Types<br>(IC= 150 mA, VCE= 2.0 V)<br>BCP56<br>BCP56−10<br>BCP56−16<br>(IC= 500 mA, VCE= 2.0 V)<br>All Types|hFE|25<br>40<br>63<br>100<br>25|−<br>−<br>−<br>−<br>−|−<br>250<br>160<br>250<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 500 mAdc, IB= 50 mAdc)|VCE(sat)|−|−|0.5|Vdc|
|Base−Emitter On Voltage<br>(IC= 500 mAdc, VCE= 2.0 Vdc)|VBE(on)|−|−|1.0|Vdc|
|**SWITCHING CHARACTERISTICS**||||||
|Rise Time<br>(VCC= 30 Vdc, IC= 150 mA, IB1= 15 mA)|tr|−|14|−|ns|
|Delay Time<br>(VCC= 30 Vdc, IC= 150 mA, IB1= 15 mA)|td|−|9|−|ns|
|Storage Time<br>(VCC= 30 Vdc, IC= 150 mA, IB1= 15 mA, IB2= 15 mA)|ts|−|714|−|ns|
|Fall Time<br>(VCC= 30 Vdc, IC= 150 mA, IB1= 15 mA, IB2= 15 mA)|tf|−|58|−|ns|
|**DYNAMIC CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mAdc, VCE= 5.0 Vdc, f = 35 MHz)|fT|−|130|−|MHz|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0% 

**www.onsemi.com** 

**2** 

**BCP56 Series** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

**==> picture [491 x 593] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>VCE = 2 V<br>TA = 150°C<br>125°C<br>25°C<br>100 -55°C<br>- 6 5°C<br>10<br>0.1 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA)<br>Figure 1. DC Current Gain<br>1000 80<br>60<br>TJ = 25°C<br>40<br>Cibo<br>20<br>100<br>10<br>8.0<br>6.0 Cobo<br>10 4.0<br>1.0 10 100 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Current−Gain − Bandwidth Product Figure 3. Capacitance<br>1 1.2<br>IC/IB = 10 150 ° C 1.1 IC/IB = 10<br>1.0<br>25 ° C<br>0.9<br>−55 ° C<br>0.8<br>0.1 −55 ° C 0.7 25 ° C<br>0.6<br>0.5<br>150 ° C<br>0.4<br>0.3<br>0.01 0.2<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>hFE, DC CURRENT GAIN<br>C, CAPACITANCE (pF)<br>f�, CURRENT‐GAIN — BANDWIDTH PRODUCT (MHz)T<br>, BASE−EMITTER<br>, COLLECTOR−EMITTER<br>BE(sat)<br>V<br>SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


**Figure 4. Collector Emitter Saturation Voltage vs. Collector Current** 

**Figure 5. Base Emitter Saturation Voltage vs. Collector Current** 

**www.onsemi.com** 

**3** 

**BCP56 Series** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

**==> picture [491 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2 1.0<br>1.1 VCE = 2 V TJ = 25°C<br>1.0 0.8<br>0.9 −55 ° C<br>0.8 0.6 IC = 10�mA mA50 100�mA 250�mA 500�mA<br>25 ° C<br>0.7<br>0.6 0.4<br>0.5 150 ° C<br>0.4 0.2<br>0.3<br>0.2 0<br>0.001 0.01 0.1 1 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50<br>IB, BASE CURRENT (mA)<br>IC, COLLECTOR CURRENT (A)<br>, BASE−EMITTER VOLTAGE (V)<br>BE(on)<br>V<br>VCE, COLLECTOR‐EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 6. Base Emitter Voltage vs. Collector Current** 

**Figure 7. Collector Saturation Region** 

**==> picture [248 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>1 mS<br>1 S<br>100 mS<br>10 mS<br>0.1<br>0.01<br>0.1 1 10 100<br>VCE, COLLECTOR EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 8. Safe Operating Area** 

**==> picture [239 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 20 40 60 80 100 120 140 160<br>TA, AMBIENT TEMPERATURE (°C)<br>, POWER DISSIPATION (W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Figure 9. Power Derating Curve** 

**www.onsemi.com** 

**4** 

**BCP56 Series** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Marking**|**Package**|**Shipping**†|
|BCP56T1G|BH|SOT−223<br>(Pb−Free)|1000 / Tape & Reel|
|SBCP56T1G*||||
|BCP56T3G|BH|SOT−223<br>(Pb−Free)|4000 / Tape & Reel|
|SBCP56T3G*||||
|BCP56−10T1G|BH−10|SOT−223<br>(Pb−Free)|1000 / Tape & Reel|
|SBCP56−10T1G*||||
|BCP56−10T3G|BH−10|SOT−223<br>(Pb−Free)|4000 / Tape & Reel|
|NSVBCP56−10T3G*||||
|BCP56−16T1G|BH−16|SOT−223<br>(Pb−Free)|1000 / Tape & Reel|
|SBCP56−16T1G*||||
|BCP56−16T3G|BH−16|SOT−223<br>(Pb−Free)|4000 / Tape & Reel|
|SBCP56−16T3G*||||



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

- *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

**www.onsemi.com** 

**5** 

**BCP56 Series** 

## **PACKAGE DIMENSIONS** 

## **SOT−223 (TO−261)** 

CASE 318E−04 ISSUE N 

**==> picture [474 x 401] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>b1 NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: INCH.<br>4 MILLIMETERS INCHES<br>tl, - DIM MIN NOM MAX MIN NOM MAX<br>HE E A 1.50 1.63 1.75 0.060 0.064 0.068<br>1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004<br>b 0.60 0.75 0.89 0.024 0.030 0.035<br>b1 2.90 3.06 3.20 0.115 0.121 0.126<br>c 0.24 0.29 0.35 0.009 0.012 0.014<br>b D 6.30 6.50 6.70 0.249 0.256 0.263<br>e1 Ee 3.302.20 3.502.30 3.702.40 0.1300.087 0.1380.091 0.1450.094<br>fo e e1 0.85 0.94 1.05 0.033 0.037 0.041<br>L 0.20 −−− −−− 0.008 −−− −−−<br>C L1 1.50 1.75 2.00 0.060 0.069 0.078<br>L i, SSS H E 6.70 7.00  SSS 7.30 0.264 0.276 = 0.287<br>A 0° − 1 0° 0° − 1 0°<br><i 0.08 (0003) A1 L ooh L1 STYLE 1: === PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>4. COLLECTOR<br>SOLDERING FOOTPRINT*<br>3.8<br>0.15<br>_ _ fc<br>2.0<br>0.079<br>~E4 7<br>6.3<br>2.3 2.3<br>0.248<br>0.091 0.091<br>2.0<br>0.079<br>“EEE<br>1.5 SCALE 6:1 mm<br>| 0.059 (—) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com 

◊ 

**N. American Technical Support** : 800−282−9855 Toll Free USA/Canada 

**Europe, Middle East and Africa Technical Support:** Phone: 421 33 790 2910 

**www.onsemi.com** 

**ON Semiconductor Website** : **www.onsemi.com** 

**Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 

**BCP56T1/D** 

**6**